JP6161764B2 - 酸化インジウム含有層の製造方法 - Google Patents
酸化インジウム含有層の製造方法 Download PDFInfo
- Publication number
- JP6161764B2 JP6161764B2 JP2016092583A JP2016092583A JP6161764B2 JP 6161764 B2 JP6161764 B2 JP 6161764B2 JP 2016092583 A JP2016092583 A JP 2016092583A JP 2016092583 A JP2016092583 A JP 2016092583A JP 6161764 B2 JP6161764 B2 JP 6161764B2
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- JP
- Japan
- Prior art keywords
- indium oxide
- containing layer
- indium
- alkoxide
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims description 64
- 229910003437 indium oxide Inorganic materials 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title description 26
- -1 Indium halogen alkoxide Chemical class 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 65
- 229910052738 indium Inorganic materials 0.000 claims description 60
- 229910052736 halogen Inorganic materials 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 36
- 239000002243 precursor Substances 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 150000004703 alkoxides Chemical group 0.000 claims description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 17
- 239000002612 dispersion medium Substances 0.000 claims description 17
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical group [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 239000008199 coating composition Substances 0.000 claims description 9
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 239000007791 liquid phase Substances 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052753 mercury Inorganic materials 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims description 4
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011260 aqueous acid Substances 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 10
- 238000007639 printing Methods 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 150000002367 halogens Chemical class 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 238000003980 solgel method Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052752 metalloid Inorganic materials 0.000 description 3
- 150000002738 metalloids Chemical class 0.000 description 3
- 125000005429 oxyalkyl group Chemical group 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 2
- XGLVDUUYFKXKPL-UHFFFAOYSA-N 2-(2-methoxyethoxy)-n,n-bis[2-(2-methoxyethoxy)ethyl]ethanamine Chemical compound COCCOCCN(CCOCCOC)CCOCCOC XGLVDUUYFKXKPL-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 150000002472 indium compounds Chemical class 0.000 description 2
- 229910001449 indium ion Inorganic materials 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical group [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 2
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000003586 protic polar solvent Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 1
- OSIGJGFTADMDOB-UHFFFAOYSA-N 1-Methoxy-3-methylbenzene Chemical compound COC1=CC=CC(C)=C1 OSIGJGFTADMDOB-UHFFFAOYSA-N 0.000 description 1
- GOJUJUVQIVIZAV-UHFFFAOYSA-N 2-amino-4,6-dichloropyrimidine-5-carbaldehyde Chemical group NC1=NC(Cl)=C(C=O)C(Cl)=N1 GOJUJUVQIVIZAV-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- 229940077398 4-methyl anisole Drugs 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- NVQHYPWXDWSZDK-UHFFFAOYSA-N C(C)OC(C1=CC=CC=C1)=O.C1CCCC2=CC=CC=C12 Chemical compound C(C)OC(C1=CC=CC=C1)=O.C1CCCC2=CC=CC=C12 NVQHYPWXDWSZDK-UHFFFAOYSA-N 0.000 description 1
- HQPSKTOGFFYYKN-UHFFFAOYSA-N CC(C)[Na] Chemical compound CC(C)[Na] HQPSKTOGFFYYKN-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical class CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical class CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 108700031620 S-acetylthiorphan Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003925 fat Chemical class 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- ITNVWQNWHXEMNS-UHFFFAOYSA-N methanolate;titanium(4+) Chemical compound [Ti+4].[O-]C.[O-]C.[O-]C.[O-]C ITNVWQNWHXEMNS-UHFFFAOYSA-N 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229940095102 methyl benzoate Drugs 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical class C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 239000002861 polymer material Substances 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical class CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Description
特開平11−106935号公報は、酸化物に基づく透明伝導性膜の製造方法であって、とりわけ金属(例えばインジウム)のアルコキシドを含む無水組成物を基板上に塗布し、そして加熱する、前記方法記載している。該膜をさらに、引き続きUV光線または可視光線(VIS−Strahlung)を用いて、金属酸化物に基づく薄層に変換できる。
独国特許第102009054997号明細書は、無水溶液からの酸化インジウム含有層の製造のための液相方法であって、少なくとも1つの溶剤もしくは分散媒体と、式InX(OR)2の少なくとも1つの前駆体とを含有する無水組成物を、無水雰囲気中で基板上に塗布し、<360nmの電磁波で照射し、且つ熱により変換する、前記方法を記載している。
a) 基板上に塗布し、
b) 該基板上に塗布された組成物を電磁波で照射し、
c) 随意に乾燥させ、且つ
d) 酸化インジウム含有層へと熱により変換し、
ここで、
・ 酸化インジウム前駆体が、一般式InX(OR)2
[式中、R=アルキル基および/またはアルコキシアルキル基であり且つX=F、Cl、BrまたはIである]
のインジウムハロゲンアルコキシドであり、且つ、
・ 170〜210nmの範囲および250〜258の範囲の光線を有意な割合で有する電磁波での照射を実施する、
前記方法によって解決される。
エッジ長約15mmを有し、且つ、約200nm厚のシリコン酸化膜、およびITO/金によるフィンガー構造を有する、ドープされたシリコン基板に、エタノール中、1.0質量%のInCl(OMe)2溶液100μlを塗布した。その後、スピンコーティングを2000rpmで(5秒間)行う。被覆された基板を、この被覆工程の直後に、5分間、水銀放電ランプから生じるUV光線(照明装置 GLF−100、Jelight 144AX−220、石英、Jelight)を用い、150〜300nmの波長範囲で照射する。引き続き、該基板を1時間、ホットプレート上、350℃の温度で加熱する。変換後、グローブボックス内で電界効果移動度についての値μFET=8.5cm2/Vsが測定された。
エッジ長約15mmを有し、且つ、約200nm厚のシリコン酸化膜、およびITO/金によるフィンガー構造を有する、ドープされたシリコン基板に、エタノール中、1.0質量%のIn(OiPr)3溶液100μlを塗布した。その後、スピンコーティングを2000rpmで(5秒間)行う。被覆された基板を、この被覆工程の直後に、5分間、水銀放電ランプから生じるUV光線(照明装置 GLF−100、Jelight 144AX−220、石英、Jelight)を用い、150〜300nmの波長範囲で照射する。引き続き、該基板を1時間、ホットプレート上、350℃の温度で加熱する。変換後、グローブボックス内で電界効果移動度についての値μFET=3.8cm2/Vsが測定された。
エッジ長約15mmを有し、且つ、約200nm厚のシリコン酸化膜、およびITO/金によるフィンガー構造を有する、ドープシリコン基板に、エタノール中、1.0質量%のInCl(OMe)2溶液100μlを塗布した。その後、スピンコーティングを2000rpmで(5秒間)行う。被覆された基板を、この被覆工程の直後に、5分間、水銀放電ランプから生じるUV光線(照明装置 GLG−100, Jelight 144AX−220、無オゾン、Jelight、波長<210nmの光線がない)を用い、230〜350nmの波長範囲で照射する。引き続き、該基板を1時間、ホットプレート上、350℃の温度で加熱する。変換後、グローブボックス内で電界効果移動度についての値μFET=4.5cm2/Vsが測定された。
Claims (15)
- 少なくとも1つの酸化インジウム前駆体と、少なくとも1つの溶剤もしくは分散媒体とを含有する混合物から製造される被覆組成物を、以下のa)〜d)の順で、
a) 基板上に塗布し、
b) 該基板上に塗布された組成物を電磁波で照射し、
c) 随意に乾燥させ、且つ、
d) 酸化インジウム含有層へと熱により変換する、
液相法において、
・ 前記酸化インジウム前駆体が、一般式InX(OR)2
[式中、R=アルキル基および/またはアルコキシアルキル基であり且つX=F、Cl、BrまたはIである]
のインジウムハロゲンアルコキシドであり、且つ、
・ 170〜210nmの範囲および250〜258nmの範囲の光線を有意な割合で有する電磁波での照射を実施することを特徴とする前記液相法によって製造された酸化インジウム含有層。 - 前記照射を、183〜187nmの範囲および250〜258nmの範囲の光線を有意な割合で有する電磁波を用いて実施することを特徴とする、請求項1に記載の酸化インジウム含有層。
- 前記照射を、低圧水銀放電ランプを使用して行うことを特徴とする、請求項1または2に記載の酸化インジウム含有層。
- 少なくとも1つのインジウムハロゲンアルコキシドのアルキル基もしくはアルコキシアルキル基が、C1〜C15−アルコキシ基またはアルキルオキシアルキル基であることを特徴とする、請求項1から3までのいずれか1項に記載の酸化インジウム含有層。
- 前記インジウムハロゲンアルコキシドが、InCl(OMe)2、InCl(OCH2CH2OCH3)2、InCl(OEt)2、InCl(OiPr)2またはInCl(OtBu)2であることを特徴とする、請求項1から4までのいずれか1項に記載の酸化インジウム含有層。
- 組成物の合計質量に対して0.1〜10質量%の割合のインジウムハロゲンアルコキシドInX(OR)2を用いることを特徴とする、請求項1から5までのいずれか1項に記載の酸化インジウム含有層。
- 前記組成物が、インジウムハロゲンアルコキシドの他に、さらに、他の前駆体を、溶解または分散して有することを特徴とする、請求項1から6までのいずれか1項に記載の酸化インジウム含有層。
- 前記他の前駆体が、他の元素のアルコキシドまたはハロゲンアルコキシドであることを特徴とする、請求項7に記載の酸化インジウム含有層。
- 前記他の前駆体が、B、Al、Ga、Ge、Sn、Pb、P、Hf、ZnおよびSbのアルコキシドまたはハロゲンアルコキシドであることを特徴とする、請求項7に記載の酸化インジウム含有層。
- 前記少なくとも1つの溶剤または分散媒体が、メタノール、エタノール、イソプロパノール、テトラヒドロフルフリルアルコール、tert−ブタノール、酢酸ブチル、メトキシエタノール、1−メトキシ−2−プロパノールまたはトルエンであることを特徴とする、請求項1から9までのいずれか1項に記載の酸化インジウム含有層。
- 前記少なくとも1つの溶剤または分散媒体が、組成物の合計質量に対して90〜99.9質量%の割合で存在することを特徴とする、請求項1から10までのいずれか1項に記載の酸化インジウム含有層。
- 段階b)における照射を、酸素(O2)の存在下で実施することを特徴とする、請求項1から11までのいずれか1項に記載の酸化インジウム含有層。
- 段階b)における照射を、相応の構造が予め備えられたマスクを通じて行うことによって酸化インジウム含有層を構造化することを特徴とする、請求項12に記載の酸化インジウム含有層。
- 段階d)における熱処理の後に段階e)を有し、前記段階e)において、段階b)で照射されていない領域を、水性酸を使用して除去することを特徴とする、請求項13に記載の酸化インジウム含有層。
- 変換を、500℃未満且つ120℃より高い温度で熱により行うことを特徴とする、請求項1から14までのいずれか1項に記載の酸化インジウム含有層。
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GB2454019B (en) * | 2007-10-27 | 2011-11-09 | Multivalent Ltd | Improvements in or relating to synthesis of gallium and indium alkoxides |
DE102008041276A1 (de) | 2008-08-15 | 2010-02-18 | Evonik Degussa Gmbh | Reichweiten- und Material-optimiertes Antennendesign für eine UHF-RFID-Antenne mit an den Chip angepasster Impedanz |
DE102008058040A1 (de) | 2008-11-18 | 2010-05-27 | Evonik Degussa Gmbh | Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten |
DE102009009337A1 (de) * | 2009-02-17 | 2010-08-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung |
DE102009009338A1 (de) | 2009-02-17 | 2010-08-26 | Evonik Degussa Gmbh | Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
DE102009001221A1 (de) | 2009-02-27 | 2010-09-02 | Evonik Degussa Gmbh | Druckverfahren zur Herstellung individualisierter elektrischer und/oder elektronischer Strukturen |
DE102009028801B3 (de) * | 2009-08-21 | 2011-04-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung |
DE102009028802B3 (de) * | 2009-08-21 | 2011-03-24 | Evonik Degussa Gmbh | Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung |
DE102009050703B3 (de) | 2009-10-26 | 2011-04-21 | Evonik Goldschmidt Gmbh | Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis |
DE102009053943A1 (de) | 2009-11-19 | 2011-05-26 | Evonik Degussa Gmbh | Verfahren zur Erzeugung silberhaltiger Strukturen, die silberhaltigen Strukturen aufweisende Erzeugnisse und ihre Verwendung |
DE102009054998A1 (de) * | 2009-12-18 | 2011-06-22 | Evonik Degussa GmbH, 45128 | Verfahren zur Herstellung von Indiumchlordialkoxiden |
DE102009054997B3 (de) | 2009-12-18 | 2011-06-01 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung |
DE102010031592A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
DE102010031895A1 (de) | 2010-07-21 | 2012-01-26 | Evonik Degussa Gmbh | Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten |
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2010
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2011
- 2011-10-26 US US13/884,495 patent/US8859332B2/en active Active
- 2011-10-26 WO PCT/EP2011/068736 patent/WO2012062575A1/de active Application Filing
- 2011-10-26 CN CN201180054427.4A patent/CN103201409B/zh not_active Expired - Fee Related
- 2011-10-26 EP EP11779137.6A patent/EP2638183B1/de not_active Not-in-force
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- 2011-10-26 KR KR1020137011988A patent/KR101801431B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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EP2638183B1 (de) | 2017-12-06 |
WO2012062575A1 (de) | 2012-05-18 |
KR20130126613A (ko) | 2013-11-20 |
JP2016169150A (ja) | 2016-09-23 |
DE102010043668B4 (de) | 2012-06-21 |
KR101801431B1 (ko) | 2017-11-24 |
CN103201409B (zh) | 2015-04-08 |
CN103201409A (zh) | 2013-07-10 |
JP5933575B2 (ja) | 2016-06-15 |
JP2013543931A (ja) | 2013-12-09 |
TW201235506A (en) | 2012-09-01 |
US20130221352A1 (en) | 2013-08-29 |
DE102010043668A1 (de) | 2012-05-10 |
TWI567232B (zh) | 2017-01-21 |
US8859332B2 (en) | 2014-10-14 |
EP2638183A1 (de) | 2013-09-18 |
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