JP6152700B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6152700B2 JP6152700B2 JP2013109069A JP2013109069A JP6152700B2 JP 6152700 B2 JP6152700 B2 JP 6152700B2 JP 2013109069 A JP2013109069 A JP 2013109069A JP 2013109069 A JP2013109069 A JP 2013109069A JP 6152700 B2 JP6152700 B2 JP 6152700B2
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 46
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 101
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 45
- 229910010271 silicon carbide Inorganic materials 0.000 description 44
- 239000007789 gas Substances 0.000 description 36
- 238000011084 recovery Methods 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 230000008859 change Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010893 electron trap Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Description
原料ガス :トリメチルアルミニウム(TMA)、アンモニア(NH3)
成長温度 :1050℃
成長圧力 :50torr
V/III比:100
平均膜厚 :20nm
原料ガス :トリメチルガリウム(TMG)、NH3
成長温度 :1080℃
成長圧力 :100torr
膜厚 :1μm
原料ガス :TMA、TMG、NH3
成長温度 :1080℃
成長圧力 :100torr
膜厚 :25nm
Al組成比 :20%
原料ガス :TMA、NH3
成長温度 :1100℃
圧力 :50torr
V/III比:5000
平均膜厚 :20nm
12 AlN層
14 チャネル層
16 電子供給層
18 2次元電子ガス
20 ゲート電極
22 ソース電極
24 ドレイン電極
30、32 電子トラップ
100 半導体装置
Claims (5)
- SiC基板上に、MOCVD法を用いて、成長温度を1100℃以下、成長圧力を100torr以下、原料ガスのV/III比を500以下の成長条件でAlN層を形成する工程と、
前記AlN層上に、窒化物半導体からなるチャネル層を形成する工程と、
前記チャネル層上に、前記チャネル層よりもバンドギャップが大きい電子供給層を形成する工程と、
前記電子供給層上に、ゲート電極、ソース電極、及びドレイン電極を形成する工程と、を備える半導体装置の製造方法。 - 前記原料ガスに含まれるIII族原料ガスとV族原料ガスとは、成長室に同時に導入するか、前記III族原料ガスを導入した後に前記V族原料ガスを導入するか、前記V族原料ガスを導入してから30秒以内に前記III族原料ガスを導入する、請求項1に記載の半導体装置の製造方法。
- 前記原料ガスに含まれるIII族原料ガスはトリメチルアルミニウムで、V族原料ガスはアンモニアである、請求項1または2に記載の半導体装置の製造方法。
- 前記AlN層を形成する工程は、5nm以上且つ40nm以下の平均膜厚で前記AlN層を形成する、請求項1から3のいずれか一項に記載の半導体装置の製造方法。
- 前記AlN層を形成する工程は、上面における最大深さRvが5nm以下である前記AlN層を形成する、請求項1から4のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013109069A JP6152700B2 (ja) | 2013-05-23 | 2013-05-23 | 半導体装置の製造方法 |
US14/285,181 US20140346530A1 (en) | 2013-05-23 | 2014-05-22 | Semiconductor device and method of manufacturing the same |
US15/783,760 US20180053648A1 (en) | 2013-05-23 | 2017-10-13 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013109069A JP6152700B2 (ja) | 2013-05-23 | 2013-05-23 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014229781A JP2014229781A (ja) | 2014-12-08 |
JP6152700B2 true JP6152700B2 (ja) | 2017-06-28 |
Family
ID=51934802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013109069A Active JP6152700B2 (ja) | 2013-05-23 | 2013-05-23 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (2) | US20140346530A1 (ja) |
JP (1) | JP6152700B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6261523B2 (ja) * | 2015-01-08 | 2018-01-17 | 信越半導体株式会社 | 電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法 |
CN105355555A (zh) | 2015-10-28 | 2016-02-24 | 中国科学院微电子研究所 | 一种GaN基增强型功率电子器件及其制备方法 |
JP7393138B2 (ja) | 2019-06-24 | 2023-12-06 | 住友化学株式会社 | Iii族窒化物積層体 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091083A (en) * | 1997-06-02 | 2000-07-18 | Sharp Kabushiki Kaisha | Gallium nitride type compound semiconductor light-emitting device having buffer layer with non-flat surface |
TWI230978B (en) * | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
JP2006286741A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置およびその製造方法並びにその半導体装置製造用基板 |
JP4531071B2 (ja) * | 2007-02-20 | 2010-08-25 | 富士通株式会社 | 化合物半導体装置 |
JP5095253B2 (ja) * | 2007-03-30 | 2012-12-12 | 富士通株式会社 | 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法 |
JP5276852B2 (ja) * | 2008-02-08 | 2013-08-28 | 昭和電工株式会社 | Iii族窒化物半導体エピタキシャル基板の製造方法 |
-
2013
- 2013-05-23 JP JP2013109069A patent/JP6152700B2/ja active Active
-
2014
- 2014-05-22 US US14/285,181 patent/US20140346530A1/en not_active Abandoned
-
2017
- 2017-10-13 US US15/783,760 patent/US20180053648A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20180053648A1 (en) | 2018-02-22 |
JP2014229781A (ja) | 2014-12-08 |
US20140346530A1 (en) | 2014-11-27 |
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