JP6144300B2 - グラフェン製造方法、グラフェン製造装置及びグラフェン製造システム - Google Patents
グラフェン製造方法、グラフェン製造装置及びグラフェン製造システム Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 497
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Description
また、請求項2記載のグラフェン製造方法は、基板の表面に触媒金属膜を形成する金属膜形成ステップと、基板の表面に前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成する調整膜形成ステップと、前記形成された触媒金属膜及び炭素濃度調整膜を加熱する加熱ステップと、前記加熱ステップの後に前記触媒金属膜及び炭素濃度調整膜を冷却する冷却ステップとを有し、前記金属膜形成ステップでは、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させることを特徴とする。
また、請求項13記載のグラフェン製造装置は、基板の表面に触媒金属膜と、前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成し、前記形成された触媒金属膜及び炭素濃度調整膜を加熱し、前記加熱された触媒金属膜及び炭素濃度調整膜を冷却するグラフェン製造装置であって、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させる手段を有することを特徴とする。
また、請求項16記載のグラフェン製造システムは、複数の処理室を備えるグラフェン製造システムであって、前記複数の処理室のうち少なくとも2つは、基板の表面に触媒金属膜と、前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成する膜形成室及び前記触媒金属膜及び炭素濃度調整膜の表面にグラフェンを析出させるグラフェン析出室からなり、前記膜形成室は、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させ、前記グラフェン析出室は、前記形成された触媒金属膜及び炭素濃度調整膜を加熱し、前記加熱された触媒金属膜及び炭素濃度調整膜を冷却することを特徴とする。
W ウエハ
17 グラフェン製造システム
22a〜22d 処理室
24 制御部
26 炭素含有触媒金属膜
27 グラフェン
30 高結晶性下地膜
31,33,35,36 グラフェン析出層
32 低炭素濃度膜
34 高炭素濃度膜
Claims (17)
- 基板の表面に結晶性下地膜を形成する下地膜形成ステップと、
前記結晶性下地膜へ接するように触媒金属膜を形成する金属膜形成ステップと、
前記形成された結晶性下地膜及び触媒金属膜を加熱する加熱ステップと、
前記加熱ステップの後に前記結晶性下地膜及び触媒金属膜を冷却する冷却ステップとを有し、
前記金属膜形成ステップでは、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させることを特徴とするグラフェン製造方法。 - 基板の表面に触媒金属膜を形成する金属膜形成ステップと、
基板の表面に前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成する調整膜形成ステップと、
前記形成された触媒金属膜及び炭素濃度調整膜を加熱する加熱ステップと、
前記加熱ステップの後に前記触媒金属膜及び炭素濃度調整膜を冷却する冷却ステップとを有し、
前記金属膜形成ステップでは、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させることを特徴とするグラフェン製造方法。 - 前記触媒金属膜は金属炭化物又は有機金属化合物からなることを特徴とする請求項1又は2記載のグラフェン製造方法。
- 前記触媒金属膜はCVD(Chemical Vapor Deposition)、PVD(Physical Vapor Deposition)又はALD(Atomic Layer Deposition)によって形成されることを特徴とする請求項1乃至3のいずれか1項に記載のグラフェン製造方法。
- 前記加熱ステップでは、前記触媒金属膜へ向けて炭素を含むガスを流すことを特徴とする請求項1乃至4のいずれか1項に記載のグラフェン製造方法。
- 前記金属膜形成ステップでは、前記炭素濃度調整膜に接するように前記触媒金属膜を形成することを特徴とする請求項2乃至5のいずれか1項に記載のグラフェン製造方法。
- 前記調整膜形成ステップが前記金属膜形成ステップよりも先に実行されて前記炭素濃度調整膜が前記基板及び前記触媒金属膜の間に形成されることを特徴とする請求項6記載のグラフェン製造方法。
- 前記金属膜形成ステップが前記調整膜形成ステップよりも先に実行されて前記触媒金属膜が前記基板及び前記炭素濃度調整膜の間に形成されることを特徴とする請求項6記載のグラフェン製造方法。
- 前記触媒金属膜の炭素濃度は前記炭素濃度調整膜の炭素濃度よりも高いことを特徴とする請求項6乃至8のいずれか1項に記載のグラフェン製造方法。
- 前記触媒金属膜の炭素濃度は前記炭素濃度調整膜の炭素濃度よりも低いことを特徴とする請求項6乃至8のいずれか1項に記載のグラフェン製造方法。
- 前記調整膜形成ステップでは、互いに炭素濃度が異なる複数の前記炭素濃度調整膜が形成されることを特徴とする請求項6乃至10のいずれか1項に記載のグラフェン製造方法。
- 基板の表面に結晶性下地膜を形成し、前記結晶性下地膜へ接するように触媒金属膜を形成し、前記形成された結晶性下地膜及び触媒金属膜を加熱し、前記加熱された結晶性下地膜及び触媒金属膜を冷却するグラフェン製造装置であって、
前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させる手段を有することを特徴とするグラフェン製造装置。 - 基板の表面に触媒金属膜と、前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成し、前記形成された触媒金属膜及び炭素濃度調整膜を加熱し、前記加熱された触媒金属膜及び炭素濃度調整膜を冷却するグラフェン製造装置であって、
前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させる手段を有することを特徴とするグラフェン製造装置。 - 複数の処理室を備えるグラフェン製造システムであって、
前記複数の処理室のうち少なくとも2つは、基板の表面に結晶性下地膜を形成し、前記結晶性下地膜へ接するよう触媒金属膜を形成する膜形成室及び前記結晶性下地膜及び触媒金属膜の表面にグラフェンを析出させるグラフェン析出室からなり、
前記膜形成室は、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させ、
前記グラフェン析出室は、前記形成された結晶性下地膜及び触媒金属膜を加熱し、前記加熱された結晶性下地膜及び触媒金属膜を冷却することを特徴とするグラフェン製造システム。 - 前記膜形成室は、前記結晶性下地膜に接するように前記触媒金属膜を形成することを特徴とする請求項14記載のグラフェン製造システム。
- 複数の処理室を備えるグラフェン製造システムであって、
前記複数の処理室のうち少なくとも2つは、基板の表面に触媒金属膜と、前記触媒金属膜とは炭素濃度が異なる炭素濃度調整膜を形成する膜形成室及び前記触媒金属膜及び炭素濃度調整膜の表面にグラフェンを析出させるグラフェン析出室からなり、
前記膜形成室は、前記触媒金属膜を形成する際に前記触媒金属膜へ炭素を含有させ、
前記グラフェン析出室は、前記形成された触媒金属膜及び炭素濃度調整膜を加熱し、前記加熱された触媒金属膜及び炭素濃度調整膜を冷却することを特徴とするグラフェン製造システム。 - 前記膜形成室は、前記炭素濃度調整膜に接するように前記触媒金属膜を形成することを特徴とする請求項16記載のグラフェン製造システム。
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