JP6133056B2 - スズまたはスズ合金めっき液 - Google Patents
スズまたはスズ合金めっき液 Download PDFInfo
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- JP6133056B2 JP6133056B2 JP2012284331A JP2012284331A JP6133056B2 JP 6133056 B2 JP6133056 B2 JP 6133056B2 JP 2012284331 A JP2012284331 A JP 2012284331A JP 2012284331 A JP2012284331 A JP 2012284331A JP 6133056 B2 JP6133056 B2 JP 6133056B2
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- group
- ring
- unsubstituted
- substituted
- tin
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- 238000007747 plating Methods 0.000 title claims description 114
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 61
- 229910001128 Sn alloy Inorganic materials 0.000 title claims description 56
- 229910052718 tin Inorganic materials 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 34
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 24
- 150000001875 compounds Chemical group 0.000 claims description 23
- 125000003358 C2-C20 alkenyl group Chemical group 0.000 claims description 20
- 125000005843 halogen group Chemical group 0.000 claims description 20
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 18
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 18
- 238000011049 filling Methods 0.000 claims description 18
- 125000000623 heterocyclic group Chemical group 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 125000003277 amino group Chemical group 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- VILAVOFMIJHSJA-UHFFFAOYSA-N dicarbon monoxide Chemical compound [C]=C=O VILAVOFMIJHSJA-UHFFFAOYSA-N 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 150000001299 aldehydes Chemical class 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 150000002576 ketones Chemical class 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229920001187 thermosetting polymer Polymers 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims 12
- 239000011135 tin Substances 0.000 description 49
- PSQYTAPXSHCGMF-BQYQJAHWSA-N β-ionone Chemical compound CC(=O)\C=C\C1=C(C)CCCC1(C)C PSQYTAPXSHCGMF-BQYQJAHWSA-N 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 25
- 239000004094 surface-active agent Substances 0.000 description 18
- -1 cyclic ester Chemical class 0.000 description 14
- SFEOKXHPFMOVRM-UHFFFAOYSA-N (+)-(S)-gamma-ionone Natural products CC(=O)C=CC1C(=C)CCCC1(C)C SFEOKXHPFMOVRM-UHFFFAOYSA-N 0.000 description 13
- 239000002253 acid Substances 0.000 description 10
- 229910001432 tin ion Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 235000014113 dietary fatty acids Nutrition 0.000 description 9
- 229930195729 fatty acid Natural products 0.000 description 9
- 239000000194 fatty acid Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 6
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
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- 150000005215 alkyl ethers Chemical class 0.000 description 4
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- 150000001728 carbonyl compounds Chemical class 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 4
- 150000007934 α,β-unsaturated carboxylic acids Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 150000003934 aromatic aldehydes Chemical class 0.000 description 3
- 150000008365 aromatic ketones Chemical class 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 125000004093 cyano group Chemical group *C#N 0.000 description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229940098779 methanesulfonic acid Drugs 0.000 description 3
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- 238000005240 physical vapour deposition Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 description 2
- FEWIGMWODIRUJM-HWKANZROSA-N (E)-4-hexen-3-one Chemical compound CCC(=O)\C=C\C FEWIGMWODIRUJM-HWKANZROSA-N 0.000 description 2
- LTYLUDGDHUEBGX-UHFFFAOYSA-N 1-(cyclohexen-1-yl)ethanone Chemical compound CC(=O)C1=CCCCC1 LTYLUDGDHUEBGX-UHFFFAOYSA-N 0.000 description 2
- PDHFSBXFZGYBIP-UHFFFAOYSA-N 2-[2-(2-hydroxyethylsulfanyl)ethylsulfanyl]ethanol Chemical compound OCCSCCSCCO PDHFSBXFZGYBIP-UHFFFAOYSA-N 0.000 description 2
- WTEVQBCEXWBHNA-UHFFFAOYSA-N Citral Natural products CC(C)=CCCC(C)=CC=O WTEVQBCEXWBHNA-UHFFFAOYSA-N 0.000 description 2
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- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
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- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
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- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 2
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- 150000004665 fatty acids Chemical class 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
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- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical compound [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 description 2
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- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229960000443 hydrochloric acid Drugs 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- BTWRPQHFJAFXJR-UHFFFAOYSA-N n-[2-(ethylaminooxy)ethoxy]ethanamine Chemical compound CCNOCCONCC BTWRPQHFJAFXJR-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229940044652 phenolsulfonate Drugs 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229960001553 phloroglucinol Drugs 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0367—Metallic bump or raised conductor not used as solder bump
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
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- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/187—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating means therefor, e.g. baths, apparatus
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- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
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Description
さらに本発明は電子部品の実装におけるバンプ形成であってビアフィル工程を含む方法に用いるのに適した電気スズまたはスズ合金めっき液及びこれによって形成されたスズまたはスズ合金を含有するバンプに関するものであり、更に詳しくは、半導体集積回路(LSI)チップを回路基板に搭載する際にチップと回路基板との間を電気的に接続するために用いられる、スズまたはスズ合金を含有するバンプに関する。
(i)下記一般式(1)で表される少なくとも一種の化合物を含有することを特徴とする、電気スズまたはスズ合金めっき液。
1)基板上に開口部を有する保護層を形成すること、並びに、
2)前記(i)に記載の電気スズまたはスズ合金めっき液を用いて前記開口部にめっき堆積物を形成すること
を含む方法。
さらに本発明のめっき液は、ビアフィル性能が高いため、実質的に空隙を有しない柱状めっき堆積物を形成することができる。
(1)基板上に開口部を有する保護層を形成すること、並びに、
(2)前記本発明の電気スズまたはスズ合金めっき液を用いて前記開口部にめっき堆積物を形成すること。
銅箔付きFR4基板を前処理液(商品名サーキュボンドトリートメント187、ダウエレクトロニクス社製)に45℃にて2分間浸漬し、銅箔表面を粗くした。その上に感光性絶縁樹脂(商品名マルチポジット9500cc、ダウエレクトロニクス社製)をスピンコーターで塗布し、露光、ベーク、及び現像により、深さ20μm、直径50μmのビアを形成した。
・メタンスルホン酸スズ:スズイオン換算で45g/L
・メタンスルホン酸(70%溶液):85ml/L
・界面活性剤1(ポリオキシエチレンポリオキシプロピレンアルキルエーテル(商品名ペグノールD−210Y、東邦化学工業社製):0.5g/L
・β−イオノン:0.07g/L
・カテコール:2g/L
β−イオノンの代わりに1−アセチル−1−シクロヘキセンを0.12g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。
β−イオノンの代わりにシトラールを0.2g/L用い、界面活性剤として界面活性剤1を0.15g/L及び界面活性剤2(β−ナフトールエトキシレート、商品名ルガルバンBNO12(BASF社製))を0.5g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。
β−イオノンの代わりに4−ヘキセン−3−オンを0.3g/L、界面活性剤1を2g/Lに変更した他は実施例1と同様の操作を行い、ビア断面を観察した。
β−イオノンの代わりにβダマスコンを0.02g/L用い、界面活性剤1を0.75g/Lに変更した他は実施例1と同様の操作を行い、ビア断面を観察した。
金属イオン源としてメタンスルホン酸スズを20g/L及びメタンスルホン酸銀を0.5g/L用い、β−イオノンの代わりにβ−ダマスコンを0.02g/L用い、さらに錯化剤として下記構造を有する3,6−ジチア−1,8−オクタンジオールを2.6g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。
界面活性剤1:ポリオキシエチレンポリオキシプロピレンアルキルエーテル、商品名ペグノールD−210Y(東邦化学工業社製)
界面活性剤2:β−ナフトールエトキシレート、商品名ルガルバンBNO12(BASF社製)
β−イオノンの代わりに下記構造を有するジヒドロ−β−イオノンを0.2g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は不十分であった。
β−イオノンの代わりに下記構造を有するシトロネラールを0.5g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は不十分であった。
β−イオノンの代わりに下記構造を有するアセトンを1g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は不十分であった。
β−イオノンの代わりに下記構造を有するメタクリル酸を1g/L用い、界面活性剤として界面活性剤2を7g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は不十分であった。
β−イオノンの代わりにベンズアルデヒドを0.025g/L、界面活性剤1の代わりに界面活性剤2を7g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は行われたが、スキップめっき及びヤケが多数観察され、実使用には不十分であった。
β−イオノンの代わりに3−クロロアセトフェノンを0.3g/L用いた他は実施例1と同様の操作を行い、ビア断面を観察した。ビアの充填は行われたが、スキップめっき及びヤケが多数観察され、実使用には不十分であった。
界面活性剤1:ポリオキシエチレンポリオキシプロピレンアルキルエーテル、商品名ペグノールD−210Y(東邦化学工業社製)
界面活性剤2:β−ナフトールエトキシレート、商品名ルガルバンBNO12(BASF社製)
Claims (8)
- 下記一般式(1)で表される少なくとも一種の化合物を含有することを特徴とする、電気スズまたはスズ合金めっき液。
ここでR 1 とR 3 が結合して環を形成する場合、
(i)R1が前記式―NR5R6で表されるアミノ基であり、かつ前記環はR5もしくはR6がR3と結合した複素環であるか、または、
(ii)R1が置換もしくは非置換のC1−C20アルキル基、C2−C20アルケニル基またはC4−C20ジエニル基であり、かつ前記環は、カルボニル炭素とR1の間に1つの酸素原子を有する複素環であり;
ただしR 2 とR 4 が結合しておらず、かつR 1 とR 3 が結合していない場合、R 3 およびR 4 の一方は、ハロゲン原子、置換もしくは非置換のC 5 −C 20 アルキル基、C 2 −C 20 アルケニル基、C 4 −C 20 ジエニル基、C 5 −C 20 シクロアルキル基、C 3 −C 20 シクロアルケニル基及びC 4 −C 20 シクロジエニル基からなる群より選択される。) - 一般式(1)で表される化合物が、α、β−不飽和アルデヒドまたはα、β―不飽和ケトンである、請求項1に記載の電気スズまたはスズ合金めっき液。
- 下記一般式(1)で表される少なくとも一種の化合物を含有することを特徴とする、電気スズ合金めっき液であって、前記スズ合金が、銀、銅、金、白金、亜鉛、ニッケル、ビスマス、インジウム、タリウム、アンチモン、パラジウム、ロジウム、イリジウム及び鉛からなる群より選択される金属とスズとの合金である電気スズ合金めっき液。
- 電気スズまたはスズ合金めっき液を用いて被めっき物表面に形成されたビアをめっき堆積層で充填する方法であって、下記一般式(1)で表される少なくとも一種の化合物を含有する電気スズまたはスズ合金めっき液を用いて電気めっきを行う工程を有することを特徴とする、方法。
- 基板上にスズまたはスズ合金を含有するバンプを形成する方法であって、次の工程
1)基板上に開口部を有する保護層を形成すること、並びに、
2)下記一般式(1)で表される少なくとも一種の化合物を含有する電気スズまたはスズ合金めっき液を用いて前記開口部にめっき堆積物を形成すること
を含む方法。
- 保護層が感光性樹脂または熱硬化性樹脂であることを特徴とする、請求項5に記載の方法。
- 下記一般式(1)で表される少なくとも一種の化合物を含有する電気スズまたはスズ合金めっき液を用いて開口部にめっき堆積物を形成する工程よりも前に、少なくとも開口部の底部分に導電性層を形成する工程をさらに含む請求項5記載の方法。
- 下記一般式(1)で表される少なくとも一種の化合物を含有する電気スズまたはスズ合金めっき液を用いて形成されたスズまたはスズ合金を含有するバンプ。
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EP13199395.8A EP2749672B1 (en) | 2012-12-27 | 2013-12-23 | Tin electroplating liquid |
TW102147929A TWI593831B (zh) | 2012-12-27 | 2013-12-24 | 錫或錫合金電鍍液 |
US14/142,443 US20140183050A1 (en) | 2012-12-27 | 2013-12-27 | Tin or tin alloy plating liquid |
KR1020130165516A KR102220798B1 (ko) | 2012-12-27 | 2013-12-27 | 주석 또는 주석 합금 도금액 |
CN201310757231.2A CN103898570B (zh) | 2012-12-27 | 2013-12-27 | 锡或锡合金电镀液 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021153160A1 (ja) | 2020-01-27 | 2021-08-05 | 三菱マテリアル株式会社 | 錫又は錫合金電解めっき液、バンプの形成方法、及び回路基板の製造方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016021439A1 (ja) * | 2014-08-08 | 2016-02-11 | 奥野製薬工業株式会社 | 銅-スズ合金めっき浴 |
CN104499011A (zh) * | 2014-11-28 | 2015-04-08 | 安徽华灿彩钢薄板科技有限公司 | 一种电镀液 |
JP6631348B2 (ja) | 2015-03-26 | 2020-01-15 | 三菱マテリアル株式会社 | ホスホニウム塩を用いためっき液 |
US9359687B1 (en) | 2015-11-24 | 2016-06-07 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US9425164B1 (en) | 2015-11-24 | 2016-08-23 | International Business Machines Corporation | Low alpha tin |
US9546433B1 (en) | 2015-11-24 | 2017-01-17 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
KR101722704B1 (ko) * | 2015-12-16 | 2017-04-11 | 엘티씨에이엠 주식회사 | 주석-은 솔더 범프 고속 도금액 및 이를 이용한 도금 방법 |
EP3199666B1 (en) * | 2016-01-29 | 2018-09-26 | ATOTECH Deutschland GmbH | Aqueous indium or indium alloy plating bath and process for deposition of indium or an indium alloy |
CN105755492B (zh) * | 2016-05-04 | 2018-04-20 | 昆山艾森半导体材料有限公司 | 一种锡球浸泡液及其制备方法 |
KR20180024765A (ko) * | 2016-08-31 | 2018-03-08 | 주식회사 호진플라텍 | 전기도금을 이용한 주석-비스무트-납 삼원합금 솔더 조성물 |
KR102639867B1 (ko) * | 2016-12-28 | 2024-02-22 | 아토테크 도이칠란트 게엠베하 운트 콤파니 카게 | 주석 도금조 및 기판 표면에 주석 또는 주석 합금을 침착시키는 방법 |
CN107675209A (zh) * | 2017-10-18 | 2018-02-09 | 江西理工大学 | 一种绿色环保锡电解精炼电解液 |
WO2019082885A1 (ja) | 2017-10-24 | 2019-05-02 | 三菱マテリアル株式会社 | 錫又は錫合金めっき液 |
WO2019082884A1 (ja) | 2017-10-24 | 2019-05-02 | 三菱マテリアル株式会社 | 錫又は錫合金めっき液 |
JP6620859B2 (ja) | 2017-10-24 | 2019-12-18 | 三菱マテリアル株式会社 | 錫又は錫合金めっき堆積層の形成方法 |
JP6620858B2 (ja) | 2017-10-24 | 2019-12-18 | 三菱マテリアル株式会社 | 錫又は錫合金めっき堆積層の形成方法 |
WO2019181905A1 (ja) | 2018-03-20 | 2019-09-26 | 三菱マテリアル株式会社 | 錫又は錫合金のめっき液、バンプの形成方法、回路基板の製造方法 |
EP3770305A4 (en) | 2018-03-20 | 2021-12-15 | Mitsubishi Materials Corporation | TIN OR TIN ALLOY PLATING LIQUID, BUMPER MOLDING DEVICE AND METHOD OF MANUFACTURING A CIRCUIT BOARD |
KR20210002514A (ko) * | 2018-04-20 | 2021-01-08 | 바스프 에스이 | 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 |
CN109457273A (zh) * | 2018-12-28 | 2019-03-12 | 江西理工大学 | 一种绿色环保型锡电解精炼电解液 |
EP4150684A4 (en) * | 2020-05-11 | 2024-06-05 | Univ Colorado State Res Found | ELECTRODEPOSITION OF PURE PHASE SNSB FROM AN EUTECTIC ETHALINE SOLUTION FOR LITHIUM-ION BATTERY ANODES |
US11280014B2 (en) | 2020-06-05 | 2022-03-22 | Macdermid Enthone Inc. | Silver/tin electroplating bath and method of using the same |
CN112538643B (zh) * | 2020-11-17 | 2022-05-13 | 珠海松柏科技有限公司 | 高速镀锡添加剂及镀锡液 |
EP4263916A1 (en) | 2020-12-18 | 2023-10-25 | Basf Se | Composition for tin or tin alloy electroplating comprising leveling agent |
WO2024022979A1 (en) | 2022-07-26 | 2024-02-01 | Basf Se | Composition for tin or tin alloy electroplating comprising leveling agent |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL134963C (ja) * | 1963-08-28 | |||
NL128321C (ja) * | 1965-02-13 | |||
CA1077430A (en) * | 1975-11-28 | 1980-05-13 | Minnesota Mining And Manufacturing Company | Electroplating bath for the electrodeposition of tin and tin/cadmium deposits |
US4207148A (en) * | 1975-11-28 | 1980-06-10 | Minnesota Mining And Manufacturing Company | Electroplating bath for the electrodeposition of tin and tin/cadmium deposits |
US4582576A (en) * | 1985-03-26 | 1986-04-15 | Mcgean-Rohco, Inc. | Plating bath and method for electroplating tin and/or lead |
US4849059A (en) * | 1988-09-13 | 1989-07-18 | Macdermid, Incorporated | Aqueous electroplating bath and method for electroplating tin and/or lead and a defoaming agent therefor |
US5093538A (en) * | 1989-06-09 | 1992-03-03 | Union Camp Corporation | Processes for the conversion of myrcene to citral |
JP2856857B2 (ja) * | 1990-07-27 | 1999-02-10 | 石原薬品株式会社 | 錫、鉛または錫―鉛合金めっき浴 |
RU2032775C1 (ru) * | 1991-08-15 | 1995-04-10 | Российский химико-технологический университет им.Д.И.Менделеева | Блескообразующая добавка в кислые электролиты для осаждения сплава олово - свинец |
JP3872201B2 (ja) * | 1998-03-25 | 2007-01-24 | ディップソール株式会社 | 錫−銀系合金酸性電気めっき浴 |
JP3996276B2 (ja) | 1998-09-22 | 2007-10-24 | ハリマ化成株式会社 | ソルダペースト及びその製造方法並びにはんだプリコート方法 |
US6267863B1 (en) * | 1999-02-05 | 2001-07-31 | Lucent Technologies Inc. | Electroplating solution for electroplating lead and lead/tin alloys |
JP2001262391A (ja) * | 2000-03-14 | 2001-09-26 | Ishihara Chem Co Ltd | スズ−銅系合金メッキ浴並びに当該皮膜を形成した電子部品 |
TW508987B (en) | 2001-07-27 | 2002-11-01 | Phoenix Prec Technology Corp | Method of forming electroplated solder on organic printed circuit board |
US7344970B2 (en) * | 2002-04-11 | 2008-03-18 | Shipley Company, L.L.C. | Plating method |
JP2009256730A (ja) * | 2008-04-17 | 2009-11-05 | Nippon Mektron Ltd | 電子部品の表面処理方法 |
JP5583894B2 (ja) * | 2008-06-12 | 2014-09-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 電気錫めっき液および電気錫めっき方法 |
US8507376B2 (en) * | 2008-10-21 | 2013-08-13 | Atotech Deutschland Gmbh | Method to form solder deposits on substrates |
EP2221396A1 (en) * | 2008-12-31 | 2010-08-25 | Rohm and Haas Electronic Materials LLC | Lead-Free Tin Alloy Electroplating Compositions and Methods |
CN102418123A (zh) * | 2011-11-25 | 2012-04-18 | 上海应用技术学院 | 一种高速电镀光亮镀锡电镀液及其制备方法和应用 |
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