JP6113298B2 - 半導体装置の製造方法、および、半導体装置 - Google Patents
半導体装置の製造方法、および、半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 150
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 149
- 238000005468 ion implantation Methods 0.000 claims description 91
- 229910052799 carbon Inorganic materials 0.000 claims description 90
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 85
- 150000002500 ions Chemical class 0.000 claims description 51
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- 238000002513 implantation Methods 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 27
- 230000001681 protective effect Effects 0.000 claims description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 238000001773 deep-level transient spectroscopy Methods 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910052734 helium Inorganic materials 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
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Description
本発明の一態様に関する半導体装置は、炭化珪素半導体基板上に形成される、n型のドリフト層と、前記ドリフト層の表面側の所定の領域に形成されるp型の活性化層とを有し、前記活性化層表面におけるキャリア寿命A(ns)と、前記活性化層と前記ドリフト層との界面におけるキャリア寿命B(ns)と、前記ドリフト層の厚みT(μm)との関係が、
<製造方法>
図1から図4は、本実施形態に関する半導体装置の製造方法を利用して、pn接合界面近傍(pn接合界面から例えば500nm以内)のキャリアトラップが減少又は除去された半導体装置を作製する工程を概略的に示した断面図である。
本実施形態によれば、半導体装置の製造方法において、炭化珪素半導体基板としてのSiC基板11上に、第1導電型(例えばn型)のドリフト層としてのSiCエピタキシャル層12を形成する。また、SiCエピタキシャル層12表面に第2導電型(例えばp型)の不純物である不純物イオンを注入し、当該不純物イオンが注入されたイオン注入層13を形成する。また、SiCエピタキシャル層12内に格子間の炭素を誘起するイオンである格子間炭素誘起イオンを注入し、余剰な格子間炭素原子が存在する余剰炭素領域31を形成する。また、イオン注入層13を形成した後、かつ、余剰炭素領域31を形成した後に、SiCエピタキシャル層12を加熱する。
<製造方法>
図6から図10は、本実施形態に関する半導体装置の製造方法を利用して、pn接合界面近傍のキャリアトラップが減少又は除去された半導体装置を作製する工程を概略的に示した断面図である。なお、第1実施形態における場合と同様の内容については、適宜説明を省略する。
本実施形態によれば、半導体装置の製造方法において、余剰炭素領域31Aを形成する前に、炭化珪素半導体基板としてのSiC基板11を除去する。そして余剰炭素領域31Aを形成する場合、ドリフト層としてのSiCエピタキシャル層12裏面から格子間炭素誘起イオンを注入する。
<製造方法>
図12から図17は、本実施形態に関する半導体装置の製造方法を利用して、pn接合界面近傍のキャリアトラップが減少又は除去された半導体装置を作製する工程を概略的に示した断面図である。なお、第1実施形態又は第2実施形態における場合と同様の内容については、適宜説明を省略する。
本実施形態によれば、半導体装置の製造方法において、炭化珪素半導体基板としてのSiC基板11上に、第1導電型(例えばn型)のドリフト層としてのSiCエピタキシャル層12を形成する。また、SiCエピタキシャル層12表面に第2導電型(例えばp型)の不純物である不純物イオンを注入し、当該不純物イオンが注入されたイオン注入層13を形成する。また、SiC基板11を除去する。また、SiC基板11を除去した後、少なくともイオン注入層13表面において保護膜17を形成する。また、保護膜17を形成した後、SiCエピタキシャル層12表面及びSiCエピタキシャル層12裏面において、熱酸化膜18を形成する。また、保護膜17及び熱酸化膜18を除去する。また、イオン注入層13を形成した後に、SiCエピタキシャル層12を加熱する。
<製造方法>
図18から図24は、本実施形態に関する半導体装置の製造方法を利用して、pn接合界面近傍のキャリアトラップが減少又は除去された半導体装置を作製する工程を概略的に示した断面図である。なお、第1実施形態、第2実施形態又は第3実施形態における場合と同様の内容については、適宜説明を省略する。
本実施形態によれば、半導体装置の製造方法において、炭化珪素半導体基板であるSiC基板11を除去した後、かつ、ドリフト層としてのSiCエピタキシャル層12を加熱する前に、少なくともイオン注入層13表面において保護膜17を形成し、SiCエピタキシャル層12表面及びSiCエピタキシャル層12裏面において熱酸化膜18を形成し、さらに、保護膜17及び熱酸化膜18を除去する。
Claims (12)
- 炭化珪素半導体基板上に、n型のドリフト層を形成するドリフト層形成工程と、
前記ドリフト層表面にp型の不純物である不純物イオンを注入し、当該不純物イオンが注入されたイオン注入層を形成するイオン注入層形成工程と、
前記ドリフト層内に格子間の炭素を誘起するイオンである格子間炭素誘起イオンを注入し、余剰な格子間炭素原子が存在する余剰炭素領域を形成する余剰炭素領域形成工程と、
前記イオン注入層形成工程の後、かつ、前記余剰炭素領域形成工程の後に、前記ドリフト層を加熱する加熱工程とを備え、
前記余剰炭素領域形成工程が、前記イオン注入層と前記ドリフト層との界面よりも深い領域に前記格子間炭素誘起イオンを注入し、前記余剰炭素領域を形成する工程であり、
前記加熱工程が、前記ドリフト層を加熱することによって、前記イオン注入層に注入された前記不純物イオンを活性化させてp型の活性化層を形成するとともに、前記格子間炭素原子を前記活性化層側に拡散させる工程である、
半導体装置の製造方法。 - 前記余剰炭素領域形成工程が、前記イオン注入層と前記ドリフト層との界面から500nm以内の深い領域側に前記格子間炭素誘起イオンを注入し、前記余剰炭素領域を形成する工程である、
請求項1に記載の半導体装置の製造方法。 - 前記余剰炭素領域形成工程が、前記ドリフト層表面から前記格子間炭素誘起イオンを注入する工程である、
請求項1に記載の半導体装置の製造方法。 - 前記余剰炭素領域形成工程の前に、前記炭化珪素半導体基板を除去する基板除去工程をさらに備え、
前記余剰炭素領域形成工程が、前記ドリフト層裏面から前記格子間炭素誘起イオンを注入する工程である、
請求項1に記載の半導体装置の製造方法。 - 前記余剰炭素領域形成工程が、炭素である前記格子間炭素誘起イオンを注入し、前記余剰炭素領域を形成する工程である、
請求項1から4のうちのいずれか1項に記載の半導体装置の製造方法。 - 前記余剰炭素領域形成工程が、注入面密度1×1013cm−2から1×1016cm−2、注入エネルギー10keVから10MeVである前記格子間炭素誘起イオンを注入し、前記余剰炭素領域を形成する工程である、
請求項1から5のうちのいずれか1項に記載の半導体装置の製造方法。 - 前記余剰炭素領域形成工程が、前記イオン注入層と前記ドリフト層との界面におけるキャリアトラップの密度より大きい注入面密度である前記格子間炭素誘起イオンを注入し、前記余剰炭素領域を形成する工程である、
請求項1から6のうちのいずれか1項に記載の半導体装置の製造方法。 - 炭化珪素半導体基板上に、n型のドリフト層を形成するドリフト層形成工程と、
前記ドリフト層表面にp型の不純物である不純物イオンを注入し、当該不純物イオンが注入されたイオン注入層を形成するイオン注入層形成工程と、
前記炭化珪素半導体基板を除去する基板除去工程と、
前記基板除去工程の後、少なくとも前記イオン注入層表面において保護膜を形成する保護膜形成工程と、
前記保護膜形成工程の後、前記ドリフト層表面及び前記ドリフト層裏面において、熱酸化膜を形成する熱酸化膜形成工程と、
前記保護膜及び前記熱酸化膜を除去する膜除去工程と、
前記イオン注入層形成工程の後に、前記ドリフト層を加熱する加熱工程とを備え、
前記熱酸化膜形成工程が、前記熱酸化膜を形成することによって、前記ドリフト層に格子間炭素原子を放出させる工程であり、
前記加熱工程が、前記ドリフト層を加熱することによって、前記イオン注入層に注入された前記不純物イオンを活性化させてp型の活性化層を形成する工程である、
半導体装置の製造方法。 - 前記イオン注入層形成工程が、アルミニウム、または、ボロンである前記不純物イオンを注入し、前記イオン注入層を形成する工程である、
請求項1から8のうちのいずれか1項に記載の半導体装置の製造方法。 - 前記加熱工程において、前記ドリフト層が加熱される温度が、1400℃から1800℃の範囲内である、
請求項1から9のうちのいずれか1項に記載の半導体装置の製造方法。 - 前記熱酸化膜形成工程において、前記熱酸化膜が形成される温度が、1000℃から1500℃の範囲内である、
請求項8に記載の半導体装置の製造方法。
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