JP6107682B2 - 半導体記憶装置及び半導体記憶装置の制御方法 - Google Patents
半導体記憶装置及び半導体記憶装置の制御方法 Download PDFInfo
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- JP6107682B2 JP6107682B2 JP2014010632A JP2014010632A JP6107682B2 JP 6107682 B2 JP6107682 B2 JP 6107682B2 JP 2014010632 A JP2014010632 A JP 2014010632A JP 2014010632 A JP2014010632 A JP 2014010632A JP 6107682 B2 JP6107682 B2 JP 6107682B2
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- Prior art keywords
- current
- voltage
- reference cell
- cell
- memory cell
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
11 コントローラ
12 書き込み&読み出し回路
13A 不揮発性レジスタ
13B テスト用レジスタ
14 行デコーダ
15 列デコーダ
16 メモリセルアレイ
Claims (7)
- メモリセルと、
リファレンスセルと、
前記メモリセルに第1の電流を流す第1の電流源と、
前記リファレンスセルに第2の電流を流す、電流量の可変な第2の電流源と、
前記メモリセルの端子間電圧に応じた電圧と前記リファレンスセルの端子間電圧に応じた電圧とを比較するセンスアンプと、
前記第2の電流源の前記電流量を定める電流量設定回路と
を含み、データ値が0の前記メモリセルの端子間電圧とデータ値が1の前記メモリセルの端子間電圧との間に前記リファレンスセルの端子間電圧が設定されるように、前記第2の電流源の前記電流量が前記電流量設定回路により定められる半導体記憶装置。 - 前記第2の電流源は、
前記リファレンスセルに直列に接続され、互いに並列に接続された複数のMOSトランジスタ
を含み、前記複数のMOSトランジスタのうちで導通状態となるMOSトランジスタの数に応じて前記第2の電流源の前記電流量が定まる請求項1記載の半導体記憶装置。 - 前記電流量設定回路は不揮発性のレジスタであり、前記不揮発性のレジスタに保持するデータにより、前記複数のMOSトランジスタのうちで導通状態となるMOSトランジスタを指定する請求項2記載の半導体記憶装置。
- 前記メモリセル及び前記リファレンスセルは、磁気トンネル接合素子を含むスピン注入型のMRAMである請求項1乃至3いずれか一項記載の半導体記憶装置。
- 前記リファレンスセルの前記磁気トンネル接合素子は、前記メモリセルの前記磁気トンネル接合素子よりも面積が大きく、高抵抗状態に書き込まれている請求項4記載の半導体記憶装置。
- メモリセルに第1の電流を流し、
リファレンスセルに第2の電流を流し、
前記メモリセルの端子間電圧に応じた電圧と前記リファレンスセルの端子間電圧に応じた電圧とを比較し、
前記比較の結果に応じて前記第2の電流の量を調整し、
前記調整した電流の量を指定するデータを不揮発性のレジスタに格納する
各段階を含む半導体記憶装置の制御方法。 - 前記第2の電流の量を調整する段階は、前記リファレンスセルに直列に接続され、互いに並列に接続された複数のMOSトランジスタのうちで、導通状態となるMOSトランジスタの数を調整する請求項6記載の半導体記憶装置の制御方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010632A JP6107682B2 (ja) | 2014-01-23 | 2014-01-23 | 半導体記憶装置及び半導体記憶装置の制御方法 |
US14/570,345 US9406366B2 (en) | 2014-01-23 | 2014-12-15 | Semiconductor memory device and method of controlling semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014010632A JP6107682B2 (ja) | 2014-01-23 | 2014-01-23 | 半導体記憶装置及び半導体記憶装置の制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015138569A JP2015138569A (ja) | 2015-07-30 |
JP6107682B2 true JP6107682B2 (ja) | 2017-04-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014010632A Expired - Fee Related JP6107682B2 (ja) | 2014-01-23 | 2014-01-23 | 半導体記憶装置及び半導体記憶装置の制御方法 |
Country Status (2)
Country | Link |
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US (1) | US9406366B2 (ja) |
JP (1) | JP6107682B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016143383A1 (ja) * | 2015-03-09 | 2016-09-15 | ソニー株式会社 | メモリセルおよび記憶装置 |
KR102661817B1 (ko) | 2016-11-14 | 2024-05-02 | 삼성전자주식회사 | 불휘발성 메모리 장치 |
KR102570472B1 (ko) * | 2017-01-10 | 2023-08-25 | 에스케이하이닉스 주식회사 | 반도체 장치 |
CN108630266B (zh) * | 2017-03-24 | 2022-10-11 | 铠侠股份有限公司 | 存储设备及其控制方法 |
CN109935254A (zh) * | 2017-12-15 | 2019-06-25 | 中电海康集团有限公司 | 写操作方法、电存储器件、装置及存储介质 |
US10741232B1 (en) | 2019-06-25 | 2020-08-11 | International Business Machines Corporation | Tunable reference system with sense amplifier offset cancellation for magnetic random access memory |
US11538519B2 (en) | 2019-09-09 | 2022-12-27 | Stmicroelectronics Sa | Method of adjusting a read margin of a memory and corresponding device |
CN113555046A (zh) * | 2020-04-24 | 2021-10-26 | 吴巍 | 磁性随机存储器及其读写方法 |
US11581030B2 (en) * | 2020-07-20 | 2023-02-14 | Nxp Usa, Inc. | Resistive memory with adjustable write parameter |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11134884A (ja) * | 1997-10-31 | 1999-05-21 | Sony Corp | 半導体装置 |
JP3948692B2 (ja) * | 1999-03-26 | 2007-07-25 | シャープ株式会社 | 半導体記憶装置 |
JP4593707B2 (ja) * | 1999-10-06 | 2010-12-08 | マクロニクス インターナショナル カンパニー リミテッド | メモリセルのセンスアンプ |
JP4245896B2 (ja) | 2001-10-26 | 2009-04-02 | 株式会社ルネサステクノロジ | 薄膜磁性体記憶装置 |
US6646911B2 (en) | 2001-10-26 | 2003-11-11 | Mitsubishi Denki Kabushiki Kaisha | Thin film magnetic memory device having data read current tuning function |
JP4192510B2 (ja) | 2002-06-14 | 2008-12-10 | 日本電気株式会社 | 半導体装置 |
JP2004062922A (ja) | 2002-07-25 | 2004-02-26 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7184301B2 (en) * | 2002-11-27 | 2007-02-27 | Nec Corporation | Magnetic memory cell and magnetic random access memory using the same |
JP4407828B2 (ja) * | 2003-04-21 | 2010-02-03 | 日本電気株式会社 | データの読み出し方法が改善された磁気ランダムアクセスメモリ |
US8050084B2 (en) * | 2006-09-05 | 2011-11-01 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device |
JP2009301678A (ja) * | 2008-06-17 | 2009-12-24 | Sharp Corp | 半導体記憶装置、表示装置、電子機器および半導体記憶装置の製造方法 |
US7881094B2 (en) * | 2008-11-12 | 2011-02-01 | Seagate Technology Llc | Voltage reference generation for resistive sense memory cells |
US7889585B2 (en) * | 2008-12-18 | 2011-02-15 | Qualcomm Incorporated | Balancing a signal margin of a resistance based memory circuit |
WO2010082243A1 (ja) * | 2009-01-13 | 2010-07-22 | パナソニック株式会社 | 不揮発性半導体メモリ及びメモリシステム |
JP2010218622A (ja) * | 2009-03-17 | 2010-09-30 | Toshiba Corp | 半導体記憶装置 |
JP2011054248A (ja) * | 2009-09-02 | 2011-03-17 | Toshiba Corp | 参照電流生成回路 |
JP5343916B2 (ja) * | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
-
2014
- 2014-01-23 JP JP2014010632A patent/JP6107682B2/ja not_active Expired - Fee Related
- 2014-12-15 US US14/570,345 patent/US9406366B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US9406366B2 (en) | 2016-08-02 |
US20150206565A1 (en) | 2015-07-23 |
JP2015138569A (ja) | 2015-07-30 |
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