JP6104823B2 - 薄型加熱基板支持体 - Google Patents
薄型加熱基板支持体 Download PDFInfo
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- JP6104823B2 JP6104823B2 JP2013556639A JP2013556639A JP6104823B2 JP 6104823 B2 JP6104823 B2 JP 6104823B2 JP 2013556639 A JP2013556639 A JP 2013556639A JP 2013556639 A JP2013556639 A JP 2013556639A JP 6104823 B2 JP6104823 B2 JP 6104823B2
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- substrate support
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- 239000000758 substrate Substances 0.000 title claims description 232
- 238000010438 heat treatment Methods 0.000 title claims description 187
- 238000012545 processing Methods 0.000 claims description 49
- 238000001816 cooling Methods 0.000 claims description 48
- 238000005086 pumping Methods 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 239000010935 stainless steel Substances 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000012212 insulator Substances 0.000 claims description 12
- 239000012809 cooling fluid Substances 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 5
- 238000004880 explosion Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 description 16
- 230000009977 dual effect Effects 0.000 description 12
- 238000012546 transfer Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- -1 bimetallic joints Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
本発明の実施形態は、概して、半導体基板上にデバイスを製造するための方法及び装置に関する。より具体的には、本発明の実施形態は、処理チャンバ内で基板を加熱し、支持するための方法及び装置を提供する。
半導体デバイスの製造時に、基板は通常、堆積、エッチング、熱処理を基板に対して実行することができる処理チャンバ内で処理される。
Claims (14)
- 表側及び裏側を有する加熱板であって、表側は基板支持面を含む加熱板と、
加熱板内に配置された発熱体と、
加熱板の裏側から延在するカンチレバーアームであって、加熱板の中心軸近くで加熱板に取り付けられた第1端部と、中心軸から半径方向外方へ延びる第2端部を有するカンチレバーアームと、
加熱板の中心軸で加熱板の裏面に結合され、カンチレバーアーム内の開口部を通ってチャンバ本体まで延在する断熱材を含む基板支持アセンブリ。 - 加熱板を断熱するように構成され、第1金属から形成された第1部分と、第1金属とは異種の第2金属から形成された第2部分を含むバイメタルジョイントを含む請求項1記載の基板支持アセンブリ。
- 第2端部付近でカンチレバーアームに取り付けられた延長チューブを含み、バイメタルジョイントは、カンチレバーアームと延長チューブの間を接続し、加熱板及びカンチレバーアームは、第1金属から形成され、延長チューブは第1金属とは異種の第2金属から形成される請求項2記載の基板支持アセンブリ。
- 第1金属はアルミニウムであり、第2金属はステンレス鋼である請求項3記載の基板支持アセンブリ。
- 延長チューブはベローズを含む請求項3記載の基板支持アセンブリ。
- 加熱板は、
基板支持面を形成する上部加熱板と、
上部加熱板に取り付けられた下部加熱板であって、発熱体が上部加熱板と下部加熱板の間に挟まれている下部加熱板と、
発熱体に取り付けられ、カンチレバーアーム内に形成された通路内に配置された加熱リードを含む請求項2記載の基板支持アセンブリ。 - 基板支持表面上に形成されたチャッキングチャネルに流体接続され、カンチレバーアーム内に形成された通路内に配置されたポンピングパイプを含む請求項2記載の基板支持アセンブリ。
- ポンピングパイプは、
カンチレバーアーム内に形成された凹部内に配置された水平チューブと、
加熱板の裏側に水平チューブを接合する真空ジョイントを含み、加熱板と水平チューブは異種金属から形成され、真空ジョイントは、2つの異種金属から形成された第1部分と第2部分を含む請求項7記載の基板支持アセンブリ。 - 加熱板内に配置された1以上のセンサと、
1以上のセンサを接続し、カンチレバーアーム内に形成された通路内に配置されたセンシングリードを含む請求項2記載の基板支持アセンブリ。 - 第2のバイメタルジョイントと、
第2のバイメタルジョイントによって延長チューブに結合されたベローズを含む請求項3記載の基板支持アセンブリ。 - バイメタルジョイントによって加熱板に結合されたポンピングパイプを含む請求項2記載の基板支持アセンブリ。
- バイメタルジョイントの第1部分及び第2部分は、爆着によって共に結合される請求項2記載の基板支持アセンブリ。
- 請求項1〜12のいずれか1項記載の基板支持アセンブリの基板支持面に基板を配置する工程であって、基板支持アセンブリは、処理チャンバ内に配置された断熱材によって支持され、これによって基板支持アセンブリはチャンバ本体に直接接触しない工程と、
基板支持アセンブリの加熱板を用いて基板を加熱する工程を含む基板を処理する方法。 - 基板支持アセンブリ及びチャンバ本体に接続された冷却アダプタに冷却流体を供給することによってチャンバ本体を冷却する工程を含む請求項13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161448018P | 2011-03-01 | 2011-03-01 | |
US61/448,018 | 2011-03-01 | ||
PCT/US2012/024524 WO2012118606A2 (en) | 2011-03-01 | 2012-02-09 | Thin heated substrate support |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014509782A JP2014509782A (ja) | 2014-04-21 |
JP6104823B2 true JP6104823B2 (ja) | 2017-03-29 |
Family
ID=46758420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013556639A Active JP6104823B2 (ja) | 2011-03-01 | 2012-02-09 | 薄型加熱基板支持体 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20130334199A1 (ja) |
JP (1) | JP6104823B2 (ja) |
KR (1) | KR101970184B1 (ja) |
CN (1) | CN103403857B (ja) |
TW (1) | TWI557787B (ja) |
WO (1) | WO2012118606A2 (ja) |
Families Citing this family (25)
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US20130334199A1 (en) | 2011-03-01 | 2013-12-19 | Applied Materials, Inc. | Thin heated substrate support |
JP6114698B2 (ja) | 2011-03-01 | 2017-04-12 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | デュアルロードロック構成内の除害及びストリップ処理チャンバ |
US10090181B2 (en) | 2011-03-01 | 2018-10-02 | Applied Materials, Inc. | Method and apparatus for substrate transfer and radical confinement |
US11171008B2 (en) * | 2011-03-01 | 2021-11-09 | Applied Materials, Inc. | Abatement and strip process chamber in a dual load lock configuration |
KR102068186B1 (ko) | 2012-02-29 | 2020-02-11 | 어플라이드 머티어리얼스, 인코포레이티드 | 로드 록 구성의 저감 및 스트립 프로세스 챔버 |
US9464732B2 (en) | 2012-04-26 | 2016-10-11 | Applied Materials, Inc. | Apparatus for uniform pumping within a substrate process chamber |
US9984866B2 (en) | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
JP2014072510A (ja) * | 2012-10-02 | 2014-04-21 | Disco Abrasive Syst Ltd | チャックテーブル |
CN104600000A (zh) * | 2013-10-30 | 2015-05-06 | 沈阳芯源微电子设备有限公司 | 一种基板周边吸附烘烤结构 |
JP6581602B2 (ja) * | 2014-02-06 | 2019-09-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインdpsチャンバハードウェア設計 |
US10032601B2 (en) * | 2014-02-21 | 2018-07-24 | Varian Semiconductor Equipment Associates, Inc. | Platen support structure |
CN112366128B (zh) | 2014-04-09 | 2024-03-08 | 应用材料公司 | 用于在处理腔室中提供对称的流动路径的流动模块 |
US9378992B2 (en) * | 2014-06-27 | 2016-06-28 | Axcelis Technologies, Inc. | High throughput heated ion implantation system and method |
JP6195029B1 (ja) | 2016-07-20 | 2017-09-13 | Toto株式会社 | 静電チャック |
US10903066B2 (en) * | 2017-05-08 | 2021-01-26 | Applied Materials, Inc. | Heater support kit for bevel etch chamber |
US10704142B2 (en) * | 2017-07-27 | 2020-07-07 | Applied Materials, Inc. | Quick disconnect resistance temperature detector assembly for rotating pedestal |
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2012
- 2012-02-09 US US13/985,497 patent/US20130334199A1/en not_active Abandoned
- 2012-02-09 WO PCT/US2012/024524 patent/WO2012118606A2/en active Application Filing
- 2012-02-09 CN CN201280011157.3A patent/CN103403857B/zh active Active
- 2012-02-09 JP JP2013556639A patent/JP6104823B2/ja active Active
- 2012-02-09 KR KR1020137024723A patent/KR101970184B1/ko active IP Right Grant
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KR101970184B1 (ko) | 2019-04-18 |
CN103403857B (zh) | 2016-04-13 |
CN103403857A (zh) | 2013-11-20 |
WO2012118606A3 (en) | 2012-10-26 |
KR20140012679A (ko) | 2014-02-03 |
WO2012118606A2 (en) | 2012-09-07 |
JP2014509782A (ja) | 2014-04-21 |
TW201241899A (en) | 2012-10-16 |
US20130334199A1 (en) | 2013-12-19 |
US20170040192A1 (en) | 2017-02-09 |
TWI557787B (zh) | 2016-11-11 |
US10204805B2 (en) | 2019-02-12 |
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