JP6100269B2 - バルクアモルファス合金ヒートシンク - Google Patents
バルクアモルファス合金ヒートシンク Download PDFInfo
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- JP6100269B2 JP6100269B2 JP2014537038A JP2014537038A JP6100269B2 JP 6100269 B2 JP6100269 B2 JP 6100269B2 JP 2014537038 A JP2014537038 A JP 2014537038A JP 2014537038 A JP2014537038 A JP 2014537038A JP 6100269 B2 JP6100269 B2 JP 6100269B2
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- Prior art keywords
- amorphous alloy
- heat sink
- alloy
- bulk solidified
- amorphous
- Prior art date
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- 229910000808 amorphous metal alloy Inorganic materials 0.000 title claims description 136
- 238000001816 cooling Methods 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 41
- 239000012530 fluid Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 24
- 230000009477 glass transition Effects 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 238000010586 diagram Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 238000004049 embossing Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 description 96
- 239000000956 alloy Substances 0.000 description 96
- 239000000203 mixture Substances 0.000 description 46
- 239000012071 phase Substances 0.000 description 45
- 229910052751 metal Inorganic materials 0.000 description 42
- 239000002184 metal Substances 0.000 description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 20
- 239000005300 metallic glass Substances 0.000 description 20
- 239000007787 solid Substances 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 238000012546 transfer Methods 0.000 description 19
- 150000002739 metals Chemical class 0.000 description 18
- 239000013078 crystal Substances 0.000 description 16
- 239000010936 titanium Substances 0.000 description 15
- 229910052719 titanium Inorganic materials 0.000 description 15
- 238000002425 crystallisation Methods 0.000 description 14
- 230000008025 crystallization Effects 0.000 description 14
- 229910052726 zirconium Inorganic materials 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 229910052742 iron Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 239000013526 supercooled liquid Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 229910052723 transition metal Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000006104 solid solution Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000005280 amorphization Methods 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 239000010955 niobium Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 229910001338 liquidmetal Inorganic materials 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000010791 quenching Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052790 beryllium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000005314 correlation function Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004512 die casting Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000009757 thermoplastic moulding Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- -1 conventional metals Chemical class 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002090 nanochannel Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005514 two-phase flow Effects 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017532 Cu-Be Inorganic materials 0.000 description 1
- 229910000759 E-Material Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- QGQFOJGMPGJJGG-UHFFFAOYSA-K [B+3].[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [B+3].[O-]N=O.[O-]N=O.[O-]N=O QGQFOJGMPGJJGG-UHFFFAOYSA-K 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910021473 hassium Inorganic materials 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 238000002074 melt spinning Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910021481 rutherfordium Inorganic materials 0.000 description 1
- YGPLJIIQQIDVFJ-UHFFFAOYSA-N rutherfordium atom Chemical compound [Rf] YGPLJIIQQIDVFJ-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910021477 seaborgium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000005328 spin glass Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 238000010104 thermoplastic forming Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 229910000931 vitreloy 1 Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D22/00—Shaping without cutting, by stamping, spinning, or deep-drawing
- B21D22/02—Stamping using rigid devices or tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D22/00—Shaping without cutting, by stamping, spinning, or deep-drawing
- B21D22/02—Stamping using rigid devices or tools
- B21D22/04—Stamping using rigid devices or tools for dimpling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
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Description
q=h・A・ΔT
式中、
q=入力の熱流又は失われた熱流(J/s=W)
h=熱伝達率(W/(m2K))
A=熱伝達表面積(m2)
ΔT=固体表面と周囲の流体領域との温度差(K)
熱伝達率は、ワット/(メートルの2乗×ケルビン温度)(W/(m2K)のSI単位を有する。
本明細書での用語「相」は、熱力学状態図内で見出すことができるものを指すことができる。相は、その全体にわたって、材料の全ての物理的特性が本質的に均一である、空間の領域(例えば、熱力学系)である。物理的特性の例としては、密度、屈折率、化学組成、及び格子周期性が挙げられる。相の単純な説明は、化学的に均一で、物理的に異なっており、及び/又は機械的に分離可能な材料の領域である。例えば、ガラスジャー内の、氷及び水からなる系では、その角氷が1つの相であり、水が第2の相であり、その水の上の湿り空気が第3の相である。ジャーのガラスは、別の分離相である。相は、2成分、3成分、4成分以上の溶体であり得る固溶体、又は金属間化合物などの化合物を指すこともある。別の例としては、アモルファス相は、結晶相とは異なる。
用語「金属」は、電気陽性の化学元素を指す。本明細書での用語「元素」は、全般的には、周期表に見出すことができる元素を指す。物理的には、基底状態の金属原子は、占有状態に近い、空状態を有する部分的充満帯を含む。用語「遷移金属」とは、不完全な内部電子殻を有し、一連の元素内の、最も電気陽性のものと最も電気陽性ではないものとの間の遷移リンクとして役立つ、周期表の第3族〜第12族の範囲内の金属元素のうちのいずれかである。遷移金属は、複数の原子価、着色化合物、及び安定な錯イオンを形成する能力によって特徴付けられる。用語「非金属」は、電子を失って陽イオンを形成する能力を有さない化学元素を指す。
用語「固溶体」は、溶体の固体形態を指す。用語「溶体」は、固体、液体、気体、又はこれらの組み合わせとすることができる、2種以上の物質の混合物を指す。この混合物は、均質又は不均質とすることができる。用語「混合物」とは、互いに組み合わされ、一般的には分離することが可能である、2種以上の物質の組成物である。一般的には、それらの2種以上の物質は、互いに化合されない。
一部の実施形態では、本明細書で説明される合金組成物は、完全に合金化することができる。一実施形態では、「合金」とは、一方の原子が他方の原子に置き換わるか、又は原子間の格子間位置を占有する、2種以上の金属の均質な混合物又は固溶体を指すものであり、例えば、黄銅は、亜鉛及び銅の合金である合金とは、複合材料とは対照的に、金属マトリックス中の1種以上の化合物などの、金属マトリックス中の1種以上の元素の部分的又は完全な固溶体を指すことができる。本明細書での合金という用語は、単一の固相の微細構造を呈し得る全率固溶合金、及び2つ以上の相を呈し得る部分的溶体の双方を指すことができる。本明細書で説明される合金組成物は、合金を含むもの、又は合金含有複合材料を含むものを指すことができる。
「アモルファス」又は「非晶質固体」は、結晶に特徴的な格子周期性を欠く固体である。本明細書で使用するとき、「アモルファス固体」は、ガラス転移を通じて、加熱されると液体状の状態へと軟化及び変態するアモルファス固体である、「ガラス」を含む。一般的には、アモルファス材料は、結晶に特徴的な長距離秩序を欠くが、それらのアモルファス材料は、化学結合の性質による、原子の長さスケールでの何らかの短距離秩序を保有し得る。アモルファス固体と結晶性固体との区別は、X線回折及び透過型電子顕微鏡検査などの構造特性評価技術によって判定される、格子周期性に基づいて行なうことができる。
「アモルファス合金」とは、50体積%超のアモルファス含有量、好ましくは90体積%超のアモルファス含有量、より好ましくは95体積%超のアモルファス含有量、最も好ましくは99体積%超〜ほぼ100体積%のアモルファス含有量を有する合金である。上述のように、アモルファス化度が高い合金は、結晶化度の程度が同等に低いことに留意されたい。「アモルファス金属」とは、無秩序な原子スケール構造を有するアモルファス金属材料である。結晶性であり、したがって高度に秩序化した原子配置を有する殆どの金属とは対照的に、アモルファス合金は非晶質である。そのような無秩序構造が、冷却の間に液体状態から直接作り出される材料は、「ガラス」と称される場合がある。したがって、アモルファス金属は、一般に「金属ガラス」又は「ガラス金属」と称される。一実施形態では、バルク金属ガラス(「BMG」)とは、その微細構造が少なくとも部分的にアモルファスである合金を指すことができる。しかしながら、アモルファス金属を作り出すためには、極度な急速冷却の他にも、物理蒸着、固相反応、イオン照射、メルトスピニング、及び機械的合金化を含めた、幾つかの方法が存在する。アモルファス合金は、それらが調製される方法とは関係なく、単一の部類の材料とすることができる。
本明細書の実施形態は、BMGを使用する電子デバイスの製作で有用であり得る。本明細書での電子デバイスとは、当該技術分野において既知の任意の電子デバイスを指すことができる。例えば、この電子デバイスは、携帯電話及び固定電話などの電話、あるいは、例えばiPhone(商標)を含めたスマートフォン、及び電子eメール送信/受信デバイスなどの、いずれかの通信デバイスとすることができる。この電子デバイスは、デジタルディスプレイ、TVモニタ、電子ブックリーダ、携帯ウェブブラウザ(例えば、iPad(商標))、及びコンピュータモニタなどの、ディスプレイの一部とすることができる。この電子デバイスはまた、携帯DVDプレーヤ、従来型DVDプレーヤ、ブルーレイディスクプレーヤ、ビデオゲームコンソール、携帯音楽プレーヤ(例えば、iPod(商標))などの音楽プレーヤなどを含めた、娯楽デバイスとすることもできる。この電子デバイスはまた、画像、ビデオ、音声のストリーミングを制御することなどの、制御を提供するデバイス(例えば、Apple TV(商標))の一部とすることもでき、又は電子デバイス用の遠隔制御装置とすることができる。この電子デバイスは、コンピュータ、あるいはハードドライブタワーの筺体若しくはケーシング、ラップトップ筺体、ラップトップキーボード、ラップトップトラックパッド、デスクトップキーボード、マウス、及びスピーカーなどの、コンピュータ付属品の一部とすることができる。この物品はまた、腕時計又は時計などのデバイスにも適用することができる。
本明細書の実施形態において、「ヒートシンク」とは、高温から低温の流体媒体へ熱エネルギーを伝達する物体である。この流体媒体はしばしば空気であるが、水であってもよく、又は熱交換器の場合には冷媒及びオイルであり得る。流体媒体が水の場合、このヒートシンクはコールドプレートと呼ばれる。
本明細書の実施形態による別のタイプのアモルファス合金ヒートシンクは、拡大面のヒートシンク、並びにマイクロ及び/又はナノチャンネルヒートシンクであり、これらは、熱源に直接取り付けられたアモルファス合金ヒートシンクコールドプレート内に、ミニチュアの経路(マイクロ毛細管)ネットワークを介して流体を通すことにより、はるかに小さい占有面積で、優れた液冷性能を提供することができる。このコンパクトで能動的な解決策は、高性能マイクロプロセッサ、及びその他の、絶縁ゲートバイポーラトランジスタ(IGBT)モジュールを含む高熱流密度用途に好適であり得る。マイクロチャンネルヒートシンクの主な利点は、熱伝達率が高く、従来の熱交換器より60倍も高くなり得ることである。
1)実質的にアモルファスであり、かつ、弾性歪み限界が約1.5%以上、ΔTが30℃以上である、アモルファス合金のシート供給材料を提供する工程と、
2)この供給材料をガラス転移温度近くまで加熱する工程と、
3)加熱された供給材料に、ナノ及び/又はマイクロ複製を成形する工程と、
4)形成された構成部品を、ガラス転移温度よりはるかに低い温度まで冷却する工程と、
5)最終仕上げを行う工程。
Claims (19)
- バルク凝固アモルファス合金のガラス転移温度(Tg)よりも高い温度におけるバルク凝固アモルファス合金の超塑性成形によって、バルク凝固アモルファス合金コンポーネントに少なくともナノ又はマイクロスケール形状をエンボス加工する工程と、
少なくともナノ又はマイクロスケール形状をエンボス加工後、少なくともバルク凝固アモルファス合金コンポーネントの一部をアモルファス相から結晶質相へと変質させる工程と、を含むヒートシンクを形成する方法であって、
前記バルク凝固アモルファス合金が、いかなる永久変形又は破損もなしに、最高1.5%又はそれ以上の歪みを維持できる、ヒートシンクを形成する方法。 - 前記少なくともナノ又はマイクロスケール形状をエンボス加工する工程が、前記バルク凝固アモルファス合金の一部を金型で型打ちする工程を含む、請求項1に記載の方法。
- 前記少なくともナノ又はマイクロスケール形状をエンボス加工する工程中に、前記バルク凝固アモルファス合金の温度がTg未満下又はTg超であり、ただし、型打ち領域の局所的温度はTg超である、請求項1に記載の方法。
- 前記バルク凝固アモルファス合金を、Tg未満から、Tgと前記バルク凝固アモルファス合金の融解温度(Tm)との間の温度まで加熱する工程と、
前記バルク凝固アモルファス合金を金型に挿入する工程と、
をさらに含み、
前記少なくともナノ又はマイクロスケール形状をエンボス加工する工程は、前記金型を介して前記バルク凝固アモルファス合金に対して力を加えることを含む、請求項2に記載の方法。 - 前記少なくともナノ又はマイクロスケール形状が、中に流体を移送するためのチャンネルを含む、請求項1に記載の方法。
- 前記方法が、ウェットプロセス又はエッチングなしで実行される、請求項1に記載の方法。
- 前記バルク凝固アモルファス合金を形成するために金属合金を処理する工程を更に含み、前記処理する工程が、前記金属合金の時間−温度−変態(TTT)図において、前記処理する工程中の時間−温度プロファイルが結晶質領域を境界付ける領域を横断しない様式で実施される、請求項1に記載の方法。
- 前記ヒートシンクの超塑性成形によって、前記ヒートシンクを物品に熱接着する工程を更に含む、請求項1に記載の方法。
- 前記物品が、少なくとも電子デバイス、冷却ファン、又は熱電冷却デバイスである、請求項8に記載の方法。
- 前記ヒートシンクと前記物品との間に、バルク凝固アモルファス合金カバー層を熱接着する工程を更に含む、請求項9に記載の方法。
- 少なくともバルク凝固アモルファス合金コンポーネントの一部をアモルファス相から結晶質相へと変質させる工程は、前記バルク凝固アモルファス合金コンポーネントの全部を結晶化させることを更に含む、請求項1に記載の方法。
- 実質的にアモルファス相を有する選択された第1部分と、
実質的に結晶質相を有する選択された第2部分と、
ヒートシンクにエンボス加工された少なくともナノ又はマイクロスケール形状とを有するヒートシンクであって、
前記ヒートシンクが、少なくとも空気の自然対流、空気の強制対流、流体の流体相変化、又は流体による液冷によって、熱を伝導するよう構成されている、ヒートシンクを備える、装置。 - 前記ヒートシンクと熱的に連結された少なくとも電子デバイス又はICチップを更に備える、請求項12に記載の装置。
- バルク凝固アモルファス合金とそれにエンボス加工された少なくともナノ又はマイクロスケール形状で結晶化された表面とを有する基板と、
少なくともナノ又はマイクロスケール形状の少なくとも一部を覆う材料の層とを備えるヒートシンクを備え、
前記材料は前記バルク凝固アモルファス合金よりも高い熱伝導率を有する装置。 - 前記ヒートシンクと熱的に連結された少なくとも電子デバイス又はICチップを更に備える、請求項14に記載の装置。
- 前記材料は、銅、ダイヤモンド、熱分解黒鉛、銀及び金からなるグループから選択される、請求項14に記載の装置。
- 少なくともバルク凝固アモルファス合金の一部をアモルファス相から結晶質相へと変質させる工程は、
前記バルク凝固アモルファス合金を加熱する工程と、
前記バルク凝固アモルファス合金の一部を結晶化するように選択された速度で、前記バルク凝固アモルファス合金を冷却する工程と、
を備える、請求項1に記載の方法。 - 前記第2部分は、前記第1部分より高い熱伝導率を有する、請求項12に記載の装置。
- 前記第1部分と前記第2部分とは同じ化学成分を備える、請求項18に記載の装置。
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