JP6091182B2 - 光デバイスウエーハの分割方法 - Google Patents
光デバイスウエーハの分割方法 Download PDFInfo
- Publication number
- JP6091182B2 JP6091182B2 JP2012255946A JP2012255946A JP6091182B2 JP 6091182 B2 JP6091182 B2 JP 6091182B2 JP 2012255946 A JP2012255946 A JP 2012255946A JP 2012255946 A JP2012255946 A JP 2012255946A JP 6091182 B2 JP6091182 B2 JP 6091182B2
- Authority
- JP
- Japan
- Prior art keywords
- optical device
- device wafer
- dividing
- wafer
- pressing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000003287 optical effect Effects 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 18
- 238000003825 pressing Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 82
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Description
波長 :355nm(YAGレーザーの第3高調波)
出力 :3.0W
繰り返し周波数 :20kHz
送り速度 :100mm/秒
レーザー加工溝形成ステップを実施した後、光デバイスウエーハ11のレーザー加工溝23が形成された分割予定ライン17に沿って外力を付与して、光デバイスウエーハ11をレーザー加工溝23を分割起点に複数のデバイスチップに分割する分割ステップを実施する。
10 レーザービーム照射ユニット
11 光デバイスウエーハ
12 レーザービーム発生ユニット
14 集光器
17 分割予定ライン
19 光デバイス
23 レーザー加工溝
25 緩衝材シート
30 分割装置
32 支持ユニット(支持手段)
34 押圧ブレード
36 支持部材
38 隙間
40 撮像ユニット
Claims (2)
- 第1の面に金属膜を有し該第1の面と反対側の第2の面に複数の分割予定ラインによって区画された各領域にそれぞれデバイスが形成された光デバイスウエーハを複数のチップに分割する光デバイスウエーハの分割方法であって、
光デバイスウエーハの第1の面に環状フレームに装着されたエキスパンドテープを貼着してフレームユニットを形成するフレームユニット形成ステップと、
該フレームユニット形成ステップを実施した後、該光デバイスウエーハの該第2の面に該光デバイスウエーハに対して吸収性を有する波長のレーザービームを照射して該第2の面にレーザー加工溝を形成するレーザー加工溝形成ステップと、
該レーザー加工溝形成ステップを実施した後、該光デバイスウエーハの該第2の面に形成された該レーザー加工溝が直線状の隙間を有する支持手段の該隙間を画成する一対の支点の中央に整列するように該光デバイスウエーハを支持手段上に載置し、該レーザー加工溝に沿って該エキスパンドテープ越しに押圧ブレードで該光デバイスウエーハを該第1の面から垂直に押圧し、該光デバイスウエーハを分割する分割ステップと、を備え、
該分割ステップは、該押圧ブレードで該押圧ブレードと該エキスパンドテープの間に挿入された可撓性を有し該エキスパンドテープより弾性の高い該エキスパンドテープと別体の緩衝材シートを押圧することにより実施され、
該緩衝材シートを介して該押圧ブレードで該光デバイスウエーハを押圧することで、該押圧ブレードが該光デバイスウエーハに及ぼす垂直方向の押圧力に加えて、該光デバイスウエーハに該押圧ブレードを境に該光デバイスウエーハを両脇へ押し広げる拡張作用が付加されることを特徴とする光デバイスウエーハの分割方法。 - 前記緩衝材シートは、ポリエチレンテレフタレートからなるシート状部材から構成される請求項1記載の光デバイスウエーハの分割方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012255946A JP6091182B2 (ja) | 2012-11-22 | 2012-11-22 | 光デバイスウエーハの分割方法 |
TW102135852A TWI590317B (zh) | 2012-11-22 | 2013-10-03 | Method of dividing plate-like workpieces |
CN201310534835.0A CN103839889B (zh) | 2012-11-22 | 2013-11-01 | 光器件晶片的分割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012255946A JP6091182B2 (ja) | 2012-11-22 | 2012-11-22 | 光デバイスウエーハの分割方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014103340A JP2014103340A (ja) | 2014-06-05 |
JP6091182B2 true JP6091182B2 (ja) | 2017-03-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012255946A Active JP6091182B2 (ja) | 2012-11-22 | 2012-11-22 | 光デバイスウエーハの分割方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6091182B2 (ja) |
CN (1) | CN103839889B (ja) |
TW (1) | TWI590317B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7373267B2 (ja) * | 2018-03-29 | 2023-11-02 | リンテック株式会社 | 個片体の製造方法 |
CN114985957B (zh) * | 2022-04-14 | 2024-03-26 | 武汉华工激光工程有限责任公司 | 膜片激光切割方法以及自动灌装封膜生产线 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4851795B2 (ja) * | 2006-01-13 | 2012-01-11 | 株式会社ディスコ | ウエーハの分割装置 |
JP2007305646A (ja) * | 2006-05-09 | 2007-11-22 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
KR20090061996A (ko) * | 2007-12-12 | 2009-06-17 | 삼성전자주식회사 | 칩 뒷면 보호 필름, 그 제조 방법 및 이를 이용한 반도체패키지의 제조 방법 |
JP2010056387A (ja) * | 2008-08-29 | 2010-03-11 | Nec Electronics Corp | 半導体装置の製造方法およびシート |
JP5528015B2 (ja) * | 2009-06-10 | 2014-06-25 | 株式会社ディスコ | レーザ加工装置 |
JP2011060985A (ja) * | 2009-09-10 | 2011-03-24 | Murata Mfg Co Ltd | 電子部品の製造方法 |
JP5657946B2 (ja) * | 2010-08-05 | 2015-01-21 | 株式会社ディスコ | 分割方法 |
JP5416081B2 (ja) * | 2010-12-27 | 2014-02-12 | 古河電気工業株式会社 | ウエハ貼着用粘着シート、ウエハの個片化方法、およびチップの製造方法 |
-
2012
- 2012-11-22 JP JP2012255946A patent/JP6091182B2/ja active Active
-
2013
- 2013-10-03 TW TW102135852A patent/TWI590317B/zh active
- 2013-11-01 CN CN201310534835.0A patent/CN103839889B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103839889B (zh) | 2018-04-20 |
JP2014103340A (ja) | 2014-06-05 |
TW201421558A (zh) | 2014-06-01 |
CN103839889A (zh) | 2014-06-04 |
TWI590317B (zh) | 2017-07-01 |
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