JP6083813B2 - 広帯域吸収体を有するアップコンバージョンデバイス - Google Patents
広帯域吸収体を有するアップコンバージョンデバイス Download PDFInfo
- Publication number
- JP6083813B2 JP6083813B2 JP2013556605A JP2013556605A JP6083813B2 JP 6083813 B2 JP6083813 B2 JP 6083813B2 JP 2013556605 A JP2013556605 A JP 2013556605A JP 2013556605 A JP2013556605 A JP 2013556605A JP 6083813 B2 JP6083813 B2 JP 6083813B2
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- diphenyl
- conversion device
- polydisperse
- tris
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006096 absorbing agent Substances 0.000 title 1
- 239000002096 quantum dot Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 13
- 230000001235 sensitizing effect Effects 0.000 claims description 12
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 9
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 claims description 7
- ZMKRXXDBXFWSQZ-UHFFFAOYSA-N tris(2,4,6-trimethyl-6-pyridin-3-ylcyclohexa-2,4-dien-1-yl)borane Chemical compound CC1=CC(C)=CC(C)(C=2C=NC=CC=2)C1B(C1C(C=C(C)C=C1C)(C)C=1C=NC=CC=1)C1C(C)=CC(C)=CC1(C)C1=CC=CN=C1 ZMKRXXDBXFWSQZ-UHFFFAOYSA-N 0.000 claims description 7
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 6
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 4
- RIKNNBBGYSDYAX-UHFFFAOYSA-N 2-[1-[2-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]-n,n-bis(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C(=CC=CC=1)C1(CCCCC1)C=1C(=CC=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 RIKNNBBGYSDYAX-UHFFFAOYSA-N 0.000 claims description 4
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 claims description 4
- -1 aluminum tin oxide Chemical compound 0.000 claims description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 4
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 claims description 4
- DETFWTCLAIIJRZ-UHFFFAOYSA-N triphenyl-(4-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 DETFWTCLAIIJRZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005525 hole transport Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- MILUBEOXRNEUHS-UHFFFAOYSA-N iridium(3+) Chemical compound [Ir+3] MILUBEOXRNEUHS-UHFFFAOYSA-N 0.000 claims description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims 2
- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 claims 1
- 239000007983 Tris buffer Substances 0.000 claims 1
- 229910000085 borane Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000002071 nanotube Substances 0.000 claims 1
- 238000000862 absorption spectrum Methods 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000002159 nanocrystal Substances 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 3
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004297 night vision Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 208000006359 hepatoblastoma Diseases 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 1
- 229940049964 oleate Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Luminescent Compositions (AREA)
Description
本出願は、あらゆる図、表、または図面を含む、その全体を本明細書に参照により本明細書によって援用される、2011年2月28日出願の、米国仮特許出願第61/447,427号明細書の優先権を主張するものである。
多分散PbSeナノ結晶は、ジフェニルホスフィン(DPP)を触媒として使用して合成した。典型的な反応では、酸化鉛(2ミリモル)を、アルゴン雰囲気下で一様に加熱し、激しく攪拌してオクタデセンとオレイン酸(6ミリモル)との混合物に溶解させた。温度が140℃に達したときに、トリオクチルホスフィンおよび56μlのDPP中の6ミリモルの1Mセレンを、ナノ結晶の核化を開始するために鉛を含む溶液中へ素早く注入した。ナノ結晶のサイズは、反応組成物、反応温度、および反応時間に依存する。反応は、反応混合物への冷トルエンの注入によって終了させた。結果として生じるナノ結晶をその後、アセトンで沈澱させ;ナノ結晶をトルエン中に再分散させ;そして過剰の未反応前駆体および反応副生物を除去するために沈澱および再分散の工程を3回繰り返すことによって単離した。
Claims (14)
- カソードと;アノードと;多分散量子ドット(QD)のフィルムを含むIR感作層とを含む、IR光検出器において、前記IR感作層が、近赤外(NIR)の少なくとも一部を含む幅広い範囲にわたって吸収し、前記多分散QDが、単峰性多分散QD混合物、または多峰性多分散QD混合物を含むことを特徴とするIR光検出器。
- 請求項1に記載のIR光検出器において、前記IR感作層が、多分散PbS QDおよび/または多分散PbSe QDを含むことを特徴とするIR光検出器。
- 請求項1に記載のIR光検出器において、前記カソードが、Ag、Ca、Mg、LiF/Al/ITO、Ag/ITO、またはCsCO3/ITOを含むことを特徴とするIR光検出器。
- 請求項1に記載のIR光検出器において、前記アノードが、インジウムスズ酸化物(ITO)、インジウム亜鉛酸化物(IZO)、アルミニウムスズ酸化物(ATO)、アルミニウム亜鉛酸化物(AZO)、またはカーボンナノチューブを含むことを特徴とするIR光検出器。
- 請求項1に記載のIR光検出器において、正孔遮断層(HBL)および/または電子遮断層(EBL)をさらに含むことを特徴とするIR光検出器。
- 請求項5に記載のIR光検出器において、前記HBLが、2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン(BCP)、p−ビス(トリフェニルシリル)ベンゼン(UGH2)、4,7−ジフェニル−1,10−フェナントロリン(BPhen)、トリス−(8−ヒドロキシキノリン)アルミニウム(Alq3)、3,5’−N,N’−ジカルバゾール−ベンゼン(mCP)、C60、トリス[3−(3−ピリジル)−メシチル]ボラン(3TPYMB)、ZnO、またはTiO2を含むことを特徴とするIR光検出器。
- 請求項5に記載のIR光検出器において、前記EBLが、1,1−ビス[(ジ−4−トリルアミノ)フェニル]シクロヘキサン(TAPC)、N,N’−ジフェニル−N,N’(2−ナフチル)−(1,1’−フェニル)−4,4’−ジアミン(NPB)、および/またはN,N’−ジフェニル−N,N’−ジ(m−トリル)ベンジジン(TPD)を含むことを特徴とするIR光検出器。
- 請求項1に記載の前記IR光検出器と発光ダイオード(LED)とを含むことを特徴とする、アップコンバーションデバイス。
- 請求項8に記載のアップコンバーションデバイスにおいて、前記LEDが発光層を含むことを特徴とするアップコンバーションデバイス。
- 請求項9に記載のアップコンバーションデバイスにおいて、前記発光層が、トリス−(2−フェニルピリジン)イリジウム(Ir(ppy)3)、ポリ−[2−メトキシ,5−(2’−エチル−ヘキシルオキシ)フェニレンビニレン](MEH−PPV)、トリス−(8−ヒドロキシキノリン)アルミニウム(Alq3)、またはイリジウム(III)ビス−[(4,6−ジ−フルオロフェニル)−ピリジネート−N,C2’]ピコリネート(FIrpic)を含むことを特徴とするアップコンバーションデバイス。
- 請求項8に記載のアップコンバーションデバイスにおいて、前記LEDが、電子輸送層(ETL)および/または正孔輸送層(HTL)をさらに含むことを特徴とするアップコンバーションデバイス。
- 請求項11に記載のアップコンバーションデバイスにおいて、前記ETLが、トリス[3−(3−ピリジル)−メシチル]ボラン(3TPYMB)、2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン(BCP)、4,7−ジフェニル−1,10−フェナントロリン(BPhen)、またはトリス−(8−ヒドロキシキノリン)アルミニウム(Alq3)を含むことを特徴とするアップコンバーションデバイス。
- 請求項11に記載のアップコンバーションデバイスにおいて、前記HTLが、1,1−ビス[(ジ−4−トリルアミノ)フェニル]シクロヘキサン(TAPC)、N,N’−ジフェニル−N,N’(2−ナフチル)−(1,1’−フェニル)−4,4’−ジアミン(NPB)、またはN,N’−ジフェニル−N,N’−ジ(m−トリル)ベンジジン(TPD)を含むことを特徴とするアップコンバーションデバイス。
- 請求項5に記載のIR光検出器において、当該IR光検出器がHBLおよびEBLを具えており、前記IR感作層が、前記HBLおよびEBLと直接物理的に接していることを特徴とするIR光検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161447427P | 2011-02-28 | 2011-02-28 | |
US61/447,427 | 2011-02-28 | ||
PCT/US2011/056178 WO2012118529A1 (en) | 2011-02-28 | 2011-10-13 | Up-conversion devices with a broad band absorber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014515177A JP2014515177A (ja) | 2014-06-26 |
JP6083813B2 true JP6083813B2 (ja) | 2017-02-22 |
Family
ID=46718369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013556605A Expired - Fee Related JP6083813B2 (ja) | 2011-02-28 | 2011-10-13 | 広帯域吸収体を有するアップコンバージョンデバイス |
Country Status (11)
Country | Link |
---|---|
US (1) | US8592801B2 (ja) |
EP (1) | EP2666190A4 (ja) |
JP (1) | JP6083813B2 (ja) |
KR (1) | KR101801436B1 (ja) |
CN (1) | CN103460404B (ja) |
BR (1) | BR112013021606A2 (ja) |
CA (1) | CA2828305A1 (ja) |
MX (1) | MX2013009894A (ja) |
RU (1) | RU2013139232A (ja) |
SG (1) | SG192142A1 (ja) |
WO (1) | WO2012118529A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022244575A1 (ja) | 2021-05-21 | 2022-11-24 | パナソニックIpマネジメント株式会社 | 光電変換素子および撮像装置 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10700141B2 (en) | 2006-09-29 | 2020-06-30 | University Of Florida Research Foundation, Incorporated | Method and apparatus for infrared detection and display |
US8716701B2 (en) | 2010-05-24 | 2014-05-06 | Nanoholdings, Llc | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
WO2013003850A2 (en) | 2011-06-30 | 2013-01-03 | University Of Florida Researchfoundation, Inc. | A method and apparatus for detecting infrared radiation with gain |
BR112015006873A2 (pt) | 2012-09-27 | 2017-07-04 | Rhodia Operations | processo para produzir nanoestruturas de prata e copolímero útil em tal processo |
DE102013106573B4 (de) * | 2013-06-24 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes optoelektronisches Bauelement, Gassensor mit strahlungsemittierenden optoelektronischen Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden optoelektronischen Bauelements |
US10334685B2 (en) * | 2014-11-14 | 2019-06-25 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Carbon dot light emitting diodes |
US10749058B2 (en) | 2015-06-11 | 2020-08-18 | University Of Florida Research Foundation, Incorporated | Monodisperse, IR-absorbing nanoparticles and related methods and devices |
CN105529345A (zh) * | 2016-01-29 | 2016-04-27 | 中国计量学院 | 一种以双异质结为光敏层的有机近红外光上转换器 |
CN107026238A (zh) * | 2016-01-30 | 2017-08-08 | 兰州大学 | 一种以平面异质结为光敏层的有机近红外上转换器件 |
CN106920886A (zh) * | 2016-04-26 | 2017-07-04 | 广东聚华印刷显示技术有限公司 | 有机电致发光器件及其制备方法 |
CN105977336A (zh) * | 2016-05-30 | 2016-09-28 | 北京理工大学 | 一种量子点红外探测与显示器件及其制备方法 |
CN106847988B (zh) * | 2017-01-25 | 2018-05-08 | 东南大学 | 基于平板显示tft基板的大面积红外探测器件及其驱动方法 |
US10351580B2 (en) * | 2017-02-17 | 2019-07-16 | The Regents Of The University Of California | Acene-based transmitter molecules for photon upconversion |
CN112385049A (zh) * | 2018-11-19 | 2021-02-19 | 松下知识产权经营株式会社 | 光传感器及光检测*** |
CN110311021B (zh) * | 2019-06-27 | 2020-11-10 | 深圳市华星光电半导体显示技术有限公司 | 量子点发光二极管器件及其制备方法 |
CN110444620B (zh) * | 2019-07-09 | 2021-05-28 | 上海科技大学 | 一种量子点红外上转换器件及其制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122905A (en) * | 1989-06-20 | 1992-06-16 | The Dow Chemical Company | Relective polymeric body |
JP4107354B2 (ja) * | 1999-07-15 | 2008-06-25 | 独立行政法人科学技術振興機構 | ミリ波・遠赤外光検出器 |
US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US20050077539A1 (en) * | 2003-08-18 | 2005-04-14 | Jan Lipson | Semiconductor avalanche photodetector with vacuum or gaseous gap electron acceleration region |
US7326908B2 (en) * | 2004-04-19 | 2008-02-05 | Edward Sargent | Optically-regulated optical emission using colloidal quantum dot nanocrystals |
JP4669281B2 (ja) | 2004-12-28 | 2011-04-13 | 富士通株式会社 | 量子ドット型赤外線検知器 |
US7811479B2 (en) * | 2005-02-07 | 2010-10-12 | The Trustees Of The University Of Pennsylvania | Polymer-nanocrystal quantum dot composites and optoelectronic devices |
ES2297972A1 (es) * | 2005-05-30 | 2008-05-01 | Universidad Politecnica De Madrid | Fotodetector de infrarrojos de banda intermedia y puntos cuanticos. |
KR20070000262A (ko) * | 2005-06-27 | 2007-01-02 | 삼성전자주식회사 | Mg-Ag 단일 박막층을 사용한 음극 전극 형성 단계를 포함하는 유기발광소자의 제조 방법 및 이에 의해 제조된 유기발광소자 |
US7414294B2 (en) * | 2005-12-16 | 2008-08-19 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix |
US8003979B2 (en) * | 2006-02-10 | 2011-08-23 | The Research Foundation Of State University Of New York | High density coupling of quantum dots to carbon nanotube surface for efficient photodetection |
CA2644629A1 (en) * | 2006-03-23 | 2008-05-08 | Solexant Corporation | Photovoltaic device containing nanoparticle sensitized carbon nanotubes |
US10700141B2 (en) * | 2006-09-29 | 2020-06-30 | University Of Florida Research Foundation, Incorporated | Method and apparatus for infrared detection and display |
DE102007043648A1 (de) * | 2007-09-13 | 2009-03-19 | Siemens Ag | Organischer Photodetektor zur Detektion infraroter Strahlung, Verfahren zur Herstellung dazu und Verwendung |
US20090208776A1 (en) * | 2008-02-19 | 2009-08-20 | General Electric Company | Organic optoelectronic device and method for manufacturing the same |
US20090217967A1 (en) * | 2008-02-29 | 2009-09-03 | International Business Machines Corporation | Porous silicon quantum dot photodetector |
JP5108806B2 (ja) * | 2008-03-07 | 2012-12-26 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
EP2259377B1 (en) * | 2008-03-19 | 2020-06-03 | Sharp Kabushiki Kaisha | Solar cell |
CN104835912B (zh) * | 2009-01-12 | 2018-11-02 | 密歇根大学董事会 | 利用电子/空穴阻挡激子阻挡层增强有机光伏电池开路电压 |
JP2010263030A (ja) * | 2009-05-01 | 2010-11-18 | Japan Advanced Institute Of Science & Technology Hokuriku | 有機el素子 |
ES2723523T3 (es) * | 2009-09-29 | 2019-08-28 | Res Triangle Inst | Dispositivos optoelectrónicos con la unión de punto cuántico-fullereno |
-
2011
- 2011-10-13 KR KR1020137025538A patent/KR101801436B1/ko active IP Right Grant
- 2011-10-13 SG SG2013056833A patent/SG192142A1/en unknown
- 2011-10-13 CA CA2828305A patent/CA2828305A1/en not_active Abandoned
- 2011-10-13 CN CN201180068540.8A patent/CN103460404B/zh not_active Expired - Fee Related
- 2011-10-13 BR BR112013021606A patent/BR112013021606A2/pt not_active IP Right Cessation
- 2011-10-13 JP JP2013556605A patent/JP6083813B2/ja not_active Expired - Fee Related
- 2011-10-13 WO PCT/US2011/056178 patent/WO2012118529A1/en active Application Filing
- 2011-10-13 RU RU2013139232/28A patent/RU2013139232A/ru unknown
- 2011-10-13 EP EP11859661.8A patent/EP2666190A4/en not_active Withdrawn
- 2011-10-13 US US13/272,928 patent/US8592801B2/en not_active Expired - Fee Related
- 2011-10-20 MX MX2013009894A patent/MX2013009894A/es unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022244575A1 (ja) | 2021-05-21 | 2022-11-24 | パナソニックIpマネジメント株式会社 | 光電変換素子および撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
US8592801B2 (en) | 2013-11-26 |
EP2666190A4 (en) | 2017-07-26 |
MX2013009894A (es) | 2013-10-30 |
CN103460404B (zh) | 2016-11-23 |
CA2828305A1 (en) | 2012-09-07 |
RU2013139232A (ru) | 2015-04-10 |
SG192142A1 (en) | 2013-08-30 |
KR20140025360A (ko) | 2014-03-04 |
JP2014515177A (ja) | 2014-06-26 |
US20120217477A1 (en) | 2012-08-30 |
EP2666190A1 (en) | 2013-11-27 |
WO2012118529A1 (en) | 2012-09-07 |
BR112013021606A2 (pt) | 2016-11-16 |
KR101801436B1 (ko) | 2017-11-24 |
CN103460404A (zh) | 2013-12-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6083813B2 (ja) | 広帯域吸収体を有するアップコンバージョンデバイス | |
JP6878376B2 (ja) | 発光体、発光フィルム、発光ダイオードおよび発光体を含む発光装置 | |
JP6513733B2 (ja) | 利得を伴って赤外線放射を検出する方法および装置 | |
TWI669832B (zh) | 發光二極體及包含該發光二極體的發光顯示裝置 | |
KR102371410B1 (ko) | 발광다이오드 및 이를 포함하는 발광장치 | |
KR101626525B1 (ko) | 합금화된 나노입자 전자 수송층을 포함하는 양자점-발광 소자 및 그 제조방법 | |
JP2019052302A (ja) | 量子ドット発光ダイオードおよびこれを含む量子ドット発光装置 | |
CN103765588B (zh) | 集成ir上转换器件和cmos图像传感器的红外成像器件 | |
CN110400886B (zh) | 发光膜、其制造方法和含该发光膜的发光器件和显示装置 | |
JP5778261B2 (ja) | 赤外光アップコンバージョンデバイス上に電荷遮断層を設けるための方法および装置 | |
US20120126204A1 (en) | Ir photodetectors with high detectivity at low drive voltage | |
Chen et al. | Nanostructure and device architecture engineering for high-performance quantum-dot light-emitting diodes | |
CN106257703A (zh) | 一种包含有金属纳米团簇的电致发光器件 | |
Choudhury et al. | Efficient solution-processed hybrid polymer–nanocrystal near infrared light-emitting devices | |
JP6123438B2 (ja) | 有機エレクトロルミネッセンス素子、それを具備した照明装置及び表示装置 | |
Kim et al. | Semitransparent quantum dot light-emitting diodes by cadmium-free colloidal quantum dots | |
CN110875433A (zh) | 量子点和包括其的电致发光器件 | |
Kwon et al. | Enhanced Stability and Highly Bright Electroluminescence of AgInZnS/CdS/ZnS Quantum Dots through Complete Isolation of Core and Shell via a CdS Interlayer | |
Kim et al. | 19.1: Efficiency Enhancement of Indium Phosphide (InP) Based Quantum Dot Light‐Emitting Diodes by Shell Thickness Tuning | |
AU2011360920A1 (en) | Up-conversion devices with a broad band absorber | |
EP3817078A1 (en) | Electroluminescent device and display device comprising thereof | |
CN118042857A (zh) | 电致发光器件和包括其的显示设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20141009 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150729 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150804 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160907 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161220 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170119 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6083813 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |