JP6072692B2 - 有機電子デバイスを製造するための方法 - Google Patents
有機電子デバイスを製造するための方法 Download PDFInfo
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- JP6072692B2 JP6072692B2 JP2013533300A JP2013533300A JP6072692B2 JP 6072692 B2 JP6072692 B2 JP 6072692B2 JP 2013533300 A JP2013533300 A JP 2013533300A JP 2013533300 A JP2013533300 A JP 2013533300A JP 6072692 B2 JP6072692 B2 JP 6072692B2
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- layer
- organic
- etching
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- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 22
- 239000012044 organic layer Substances 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000015654 memory Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 14
- 239000011368 organic material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010924 continuous production Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
- Semiconductor Memories (AREA)
- Photovoltaic Devices (AREA)
Description
a)金属層及び有機層を第1及び第2の外層として(スタックの一方の側に)有する層のスタックを生成するステップ。この文書において、"第1の外層"はスタックの最外層であり、"第2の外層"はその下に直接的に配置される。好ましくは、金属層が第1の外層であり、有機層が第2の外層であるが、反対の構成も本発明により含まれるべきである。
b)エッチングにより前述の(第1及び第2の)外層を構造化するステップ。構造化は、特に、エクステンションの平面における層の初期の均一性が、例えば平面における開口部の生成により壊されることを含んでもよい。
1.プラズマエッチングを用いてOLEDを構造化するステップ
2.エッチング保護層を用いてエッチングされるべきでないエリアを規定するステップ
− 厚く構造化された金属層(図1−6)
− オーバーレイ薄膜カプセル化の構造化された層(図7―9)
− エッチングの間にOLEDを害することなくこれを保護する任意の構造化されたエッチング保護層
から成り得る。
− 成長した層の構造化のための絶縁体と組み合わせて金属(イオン液体)のガルヴァニック成長を使用する。
− シャドウマスクと組み合わせて熱蒸発/スパッタリングプロセスを用いる。
Claims (7)
- 電子デバイスを製造する方法であって、
金属層及び有機層を第1及び第2の外層として有する層のスタックを生成するステップと、
前記第1の外層上に、薄膜カプセル化材料を有する構造化された保護層を堆積させるステップと、
前記構造化された保護層を堆積させるステップの後に、エッチングにより前記第1及び第2の外層を構造化するステップとを有する、方法。 - 前記エッチングは、ドライエッチングを有する、請求項1に記載の方法。
- 前記第1の外層は、前記金属層である、請求項1に記載の方法。
- 前記構造化された保護層は、マスクを介したスパッタリング若しくは蒸発、プロッティング及び/又は印刷により堆積される、請求項1に記載の方法。
- 前記電子デバイスは、薄膜カプセル化においてカプセル化される、請求項1に記載の方法。
- 前記有機層は、有機電子発光材料を有する、請求項1に記載の方法。
- 前記電子デバイスは、OLED、有機太陽電池又は有機メモリである、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10187218.2 | 2010-10-12 | ||
EP10187218 | 2010-10-12 | ||
PCT/IB2011/054404 WO2012049593A1 (en) | 2010-10-12 | 2011-10-06 | Method for manufacturing an organic electronic device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014500571A JP2014500571A (ja) | 2014-01-09 |
JP2014500571A5 JP2014500571A5 (ja) | 2014-11-27 |
JP6072692B2 true JP6072692B2 (ja) | 2017-02-01 |
Family
ID=44863163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013533300A Expired - Fee Related JP6072692B2 (ja) | 2010-10-12 | 2011-10-06 | 有機電子デバイスを製造するための方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10062858B2 (ja) |
EP (1) | EP2628197A1 (ja) |
JP (1) | JP6072692B2 (ja) |
KR (1) | KR20130143586A (ja) |
CN (1) | CN103155197B (ja) |
TW (1) | TWI548132B (ja) |
WO (1) | WO2012049593A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7335590B2 (ja) | 2019-07-12 | 2023-08-30 | 株式会社ネットミル | ロール紙用紙片、及び、紙片束体 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3537591B2 (ja) * | 1996-04-26 | 2004-06-14 | パイオニア株式会社 | 有機elディスプレイの製造方法 |
JP3948082B2 (ja) * | 1997-11-05 | 2007-07-25 | カシオ計算機株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
JPH11312583A (ja) | 1998-04-27 | 1999-11-09 | Hokuriku Electric Ind Co Ltd | El素子の製造方法 |
JP2001110566A (ja) * | 1999-10-04 | 2001-04-20 | Sanyo Electric Co Ltd | El表示装置の製造方法 |
DE10039644A1 (de) * | 2000-08-14 | 2002-02-28 | Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh | Lochmaske und Verfahren zur Herstellung einer Lochmaske |
KR100941129B1 (ko) | 2002-03-26 | 2010-02-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그의 제조방법 |
TWI238449B (en) * | 2003-06-06 | 2005-08-21 | Pioneer Corp | Organic semiconductor device and method of manufacture of same |
US6953705B2 (en) * | 2003-07-22 | 2005-10-11 | E. I. Du Pont De Nemours And Company | Process for removing an organic layer during fabrication of an organic electronic device |
US7332263B2 (en) | 2004-04-22 | 2008-02-19 | Hewlett-Packard Development Company, L.P. | Method for patterning an organic light emitting diode device |
JP4316469B2 (ja) * | 2004-10-15 | 2009-08-19 | 株式会社東芝 | 自動設計装置 |
US20080252205A1 (en) | 2005-09-28 | 2008-10-16 | Koninklijke Philips Electronics, N.V. | Large Area Organic Diode Device and a Method of Manufacturing It |
TWI267213B (en) * | 2006-01-27 | 2006-11-21 | Ind Tech Res Inst | Organic light emitting device with integrated color filter and method of manufacturing the same |
JP2007242436A (ja) | 2006-03-09 | 2007-09-20 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置の製造方法及び有機エレクトロルミネッセンス装置 |
JP4733005B2 (ja) | 2006-04-20 | 2011-07-27 | エルジー ディスプレイ カンパニー リミテッド | 有機半導体物質を利用した液晶表示装置用アレイ基板及びその製造方法 |
NL1033860C2 (nl) * | 2007-05-16 | 2008-11-18 | Otb Group Bv | Werkwijze voor het aanbrengen van een dunnefilm-encapsulatielaagsamenstel op een organisch device en een organisch device voorzien van een dunnefilm-encapsulatielaagsamenstel bij voorkeur aangebracht met een dergelijke werkwijze. |
DE102007046337A1 (de) * | 2007-09-27 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
CN101459223B (zh) * | 2007-12-12 | 2010-06-09 | 中国科学院微电子研究所 | 一种制备交叉线阵列结构有机分子器件的方法 |
JP2010056075A (ja) * | 2008-07-29 | 2010-03-11 | Sony Corp | 発光素子及び有機エレクトロルミネッセンス表示装置 |
EP2157476A1 (fr) | 2008-08-20 | 2010-02-24 | Nivarox-FAR S.A. | Procédé de fabrication de pièces métalliques multi-niveaux par la technique LIGA-UV |
WO2010062266A1 (en) | 2008-11-26 | 2010-06-03 | Smartconnect Holdings Pte Ltd | Credit provision system and method |
JP2010157493A (ja) * | 2008-12-02 | 2010-07-15 | Sony Corp | 表示装置およびその製造方法 |
WO2010096019A1 (en) * | 2009-02-20 | 2010-08-26 | Agency For Science, Technology And Research | Planar conjugated compounds and their applications for organic electronics |
US8314468B2 (en) | 2009-06-10 | 2012-11-20 | Moxtek, Inc. | Variable ring width SDD |
JPWO2011021573A1 (ja) * | 2009-08-17 | 2013-01-24 | Jsr株式会社 | パターン形成方法 |
-
2011
- 2011-10-06 WO PCT/IB2011/054404 patent/WO2012049593A1/en active Application Filing
- 2011-10-06 US US13/877,684 patent/US10062858B2/en not_active Expired - Fee Related
- 2011-10-06 CN CN201180049521.0A patent/CN103155197B/zh not_active Expired - Fee Related
- 2011-10-06 KR KR1020137012188A patent/KR20130143586A/ko not_active Application Discontinuation
- 2011-10-06 EP EP11773903.7A patent/EP2628197A1/en not_active Withdrawn
- 2011-10-06 JP JP2013533300A patent/JP6072692B2/ja not_active Expired - Fee Related
- 2011-10-11 TW TW100136815A patent/TWI548132B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7335590B2 (ja) | 2019-07-12 | 2023-08-30 | 株式会社ネットミル | ロール紙用紙片、及び、紙片束体 |
Also Published As
Publication number | Publication date |
---|---|
EP2628197A1 (en) | 2013-08-21 |
US10062858B2 (en) | 2018-08-28 |
CN103155197A (zh) | 2013-06-12 |
TWI548132B (zh) | 2016-09-01 |
CN103155197B (zh) | 2016-09-07 |
JP2014500571A (ja) | 2014-01-09 |
KR20130143586A (ko) | 2013-12-31 |
US20130210177A1 (en) | 2013-08-15 |
WO2012049593A1 (en) | 2012-04-19 |
TW201251170A (en) | 2012-12-16 |
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