JP6048829B2 - イオン源 - Google Patents
イオン源 Download PDFInfo
- Publication number
- JP6048829B2 JP6048829B2 JP2013185956A JP2013185956A JP6048829B2 JP 6048829 B2 JP6048829 B2 JP 6048829B2 JP 2013185956 A JP2013185956 A JP 2013185956A JP 2013185956 A JP2013185956 A JP 2013185956A JP 6048829 B2 JP6048829 B2 JP 6048829B2
- Authority
- JP
- Japan
- Prior art keywords
- ion source
- gas
- cathode
- plasma generation
- helium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007789 gas Substances 0.000 claims description 80
- 150000002500 ions Chemical class 0.000 claims description 77
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 40
- 239000001307 helium Substances 0.000 claims description 30
- 229910052734 helium Inorganic materials 0.000 claims description 30
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 239000001569 carbon dioxide Substances 0.000 claims description 20
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- 239000003085 diluting agent Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000010790 dilution Methods 0.000 claims description 13
- 239000012895 dilution Substances 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- -1 carbon ions Chemical class 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000007795 chemical reaction product Substances 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
プラズマ生成容器1の壁面も高融点金属で構成されていることから、この部分にプロセスガスとの反応物が堆積することが考えられる。堆積物が大きくなって、これが剥がれ落ちると、イオン源内に配置された電位の異なる部材間を短絡させてしまうことが懸念される。そこで堆積物の剥がれ落ちを抑制する為に、プラズマ生成容器1の壁面を凹凸状に加工しておいてもよい。
2 カソード
3 フィラメント
5 第一のガスボトル
6 第二のガスボトル
14 熱シールド
Claims (5)
- 炭素イオンを含むイオンビームを発生させるイオン源であって、
少なくとも炭素を含有するプロセスガスと少なくともヘリウムを含有する希釈ガスが供給されるプラズマ生成容器と、
前記プラズマ生成容器の端部に容器壁面と電気的に離間するように配置され、熱電子を放出する熱電子放出部とを備えたイオン源。 - 前記プロセスガスは二酸化炭素である請求項1記載のイオン源。
- 前記希釈ガスはヘリウムガスとアルゴンガスからなる請求項1または2記載のイオン源。
- 前記熱電子放出部は、前記プラズマ生成容器内に熱電子を放出するカソードと当該カソードを加熱するフィラメントからなる請求項1乃至3のいずれか一項に記載のイオン源。
- 前記カソードの周囲には、環状の熱シールドが配置されている請求項4記載のイオン源。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013185956A JP6048829B2 (ja) | 2013-09-09 | 2013-09-09 | イオン源 |
TW103112104A TWI575548B (zh) | 2013-09-09 | 2014-04-01 | 離子源 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013185956A JP6048829B2 (ja) | 2013-09-09 | 2013-09-09 | イオン源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015053208A JP2015053208A (ja) | 2015-03-19 |
JP6048829B2 true JP6048829B2 (ja) | 2016-12-21 |
Family
ID=52113901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013185956A Active JP6048829B2 (ja) | 2013-09-09 | 2013-09-09 | イオン源 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6048829B2 (ja) |
TW (1) | TWI575548B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111133551B (zh) * | 2017-09-22 | 2023-03-07 | 住友重机械工业株式会社 | 离子源装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2915001B2 (ja) * | 1989-06-09 | 1999-07-05 | ティーディーケイ株式会社 | 記録再生用摺動部材 |
JP3758667B1 (ja) * | 2005-05-17 | 2006-03-22 | 日新イオン機器株式会社 | イオン源 |
JP4412294B2 (ja) * | 2006-02-10 | 2010-02-10 | 日新イオン機器株式会社 | イオン源 |
JP2008227283A (ja) * | 2007-03-14 | 2008-09-25 | Mitsui Eng & Shipbuild Co Ltd | SiCパーティクルモニタウエハの製造方法 |
JP4636087B2 (ja) * | 2008-01-07 | 2011-02-23 | 日新イオン機器株式会社 | フィラメント保持構造およびそれを備えるイオン源 |
KR101128870B1 (ko) * | 2008-03-25 | 2012-03-27 | 미쯔이 죠센 가부시키가이샤 | 이온원 |
US8304033B2 (en) * | 2009-02-04 | 2012-11-06 | Tel Epion Inc. | Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles |
DE102009017648A1 (de) * | 2009-04-16 | 2010-10-21 | Siemens Aktiengesellschaft | Gasinjektionssystem und Verfahren zum Betrieb eines Gasinjektionssystems, insbesondere für eine Partikeltherapieanlage |
US8003959B2 (en) * | 2009-06-26 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning end point detection |
US9805912B2 (en) * | 2010-11-17 | 2017-10-31 | Axcelis Technologies, Inc. | Hydrogen COGas for carbon implant |
-
2013
- 2013-09-09 JP JP2013185956A patent/JP6048829B2/ja active Active
-
2014
- 2014-04-01 TW TW103112104A patent/TWI575548B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201440110A (zh) | 2014-10-16 |
TWI575548B (zh) | 2017-03-21 |
JP2015053208A (ja) | 2015-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102005119B1 (ko) | 이온생성방법 및 이온생성장치 | |
JP5808417B2 (ja) | 電子ビームを形成するための装置 | |
EP3024012B1 (en) | Activation chamber and kit used in treatment device for lowering electron affinity, treatment device that contains said kit and is used to lower electronic affinity, photocathode electron-beam source, electron gun containing photocathode electron-beam source, free-electron laser accelerator, transmission electron microscope, scanning electron microscope, electron-beam holography microscope, electron-beam lithography device, electron-beam diffraction device, and electron-beam scanning device | |
KR102272680B1 (ko) | 이온발생장치 및 열전자 방출부 | |
JP2008532306A5 (ja) | ||
JP2015512558A5 (ja) | 基板処理用のイオン注入システム及び基板処理方法 | |
JP2018147723A (ja) | イオン生成装置 | |
JP2016225139A (ja) | プラズマ生成装置および熱電子放出部 | |
US9147550B2 (en) | Gas mixture method and apparatus for generating ion beam | |
JP3542031B2 (ja) | 冷陰極形成方法、及び電子放出素子並びにその応用デバイス | |
JP6048829B2 (ja) | イオン源 | |
JP4401977B2 (ja) | イオン源に用いるフィラメントの作製方法及びイオン源 | |
US6639223B2 (en) | Gaseous ion source feed for oxygen ion implantation | |
JP4359597B2 (ja) | 放電安定性に優れた中空カソード放電ガン | |
JP2007305336A (ja) | 直流高密度プラズマ源、成膜装置および膜の製造方法 | |
JPH11273894A (ja) | 薄膜形成装置 | |
JP4534078B2 (ja) | アーク放電用陰極及びイオン源 | |
JPH11224797A (ja) | プラズマ発生装置及び薄膜形成装置 | |
JP2009266779A (ja) | イオンドーピング装置 | |
JP4683418B2 (ja) | プラズマcvd装置 | |
JP2010126762A (ja) | 成膜装置および成膜方法 | |
JP5325525B2 (ja) | 薄膜素子の製造方法 | |
JP2016085963A (ja) | 放電を発生させるための装置及び方法 | |
JP2003213404A (ja) | カソードアークイオン成膜装置 | |
CN114695038A (zh) | 空心阴极及离子源 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160204 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161026 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161028 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161110 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6048829 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |