JP6040518B2 - 電子機器および半導体基板 - Google Patents
電子機器および半導体基板 Download PDFInfo
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- JP6040518B2 JP6040518B2 JP2011183985A JP2011183985A JP6040518B2 JP 6040518 B2 JP6040518 B2 JP 6040518B2 JP 2011183985 A JP2011183985 A JP 2011183985A JP 2011183985 A JP2011183985 A JP 2011183985A JP 6040518 B2 JP6040518 B2 JP 6040518B2
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- organic semiconductor
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RIQXSPGGOGYAPV-UHFFFAOYSA-N tetrabenzo(a,c,l,o)pentacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=C5C6=CC=CC=C6C=6C(C5=CC4=C3)=CC=CC=6)=C3)C3=C(C=CC=C3)C3=C21 RIQXSPGGOGYAPV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/05—Function characteristic wavelength dependent
- G02F2203/055—Function characteristic wavelength dependent wavelength filtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
1.第1実施形態の電子機器(有機EL表示装置)
2.第2実施形態の電子機器(液晶表示装置)
[有機EL表示装置の構成]
まず、本技術の第1実施形態の電子機器について説明する。ここで説明する電子機器は、例えば、表示装置の一例である有機EL表示装置であり、スイッチング用の素子として有機TFTを用いている。なお、本技術の半導体基板はここで説明する電子機器に適用されるため、その半導体基板については以下で併せて説明する。
この有機EL表示装置では、例えば、選択用の有機TFT20により画素が選択されると、その画素が駆動用の有機TFT20により駆動される。これにより、画素電極15と対向電極18との間に電界が印加されると、有機EL層17から画像形成用の光Lが発生する。この光Lが対向基体19を経由して外部へ放出されるため、画像が表示される。
この有機EL表示装置によれば、光源である有機EL層17から生じた光Lが有機半導体層23に至る経路に、上記した光吸収透過特性を有する光吸収透過層(上部層間絶縁層14)が配置されている。これにより、上記したように、吸収波長域光の吸収および上部層間絶縁層14の高温焼成に起因する有機半導体層23の電気的特性の低下が抑制される。よって、有機半導体層23の電気的特性を確保することができる。
上部層間絶縁層14が光吸収透過特性を有するようにしたが、有機EL層17から生じた光Lが有機半導体層23に至る経路に配置されている他の絶縁層が光吸収透過特性を有してもよい。この「他の絶縁層」とは、例えば、図1に示したように、下部層間絶縁層13、画素分離絶縁層16、ゲート絶縁層22または平坦化絶縁層12などである。この場合には、上部層間絶縁層14、下部層間絶縁層13、画素分離絶縁層16、ゲート絶縁層22および平坦化絶縁層12などのうちの少なくとも1つが光吸収透過特性を有していればよい。
[液晶表示装置の構成]
本技術の第2実施形態の電子機器は、例えば、表示装置の他の一例である液晶表示装置であり、有機EL表示装置と同様にスイッチング用の素子として有機TFTを用いている。なお、以下の説明では、必要に応じて第1実施形態の構成要素を引用している。また、第1実施形態と同様に、本技術の半導体基板については以下で併せて説明する。
この液晶表示装置では、有機TFT40により画素が選択され、その画素における画素電極33と対向電極36との間に電界が印加されると、その電界強度に応じて液晶層35における液晶分子の配向状態が変化する。これにより、液晶分子の配向状態に応じて光Lの透過量(透過率)が制御されるため、画像が表示される。
この液晶表示装置によれば、光源であるバックライト31から生じた光Lが有機半導体層43に至る経路に、光吸収透過特性を有する光吸収透過層(平坦化絶縁層32)が配置されている。よって、第1実施形態と同様の作用が得られるため、有機半導体層43の電気的特性を確保することができる。
平坦化絶縁層32および層間絶縁層34が光吸収透過特性を有するようにしたが、バックライト31から生じた光Lが有機半導体層43に至る経路に配置されている他の絶縁層が光吸収透過特性を有していてもよい。この「他の絶縁層」とは、例えば、図4に示したように、ゲート絶縁層42などである。この場合には、平坦化絶縁層32、層間絶縁層34およびゲート絶縁層42などのうちの少なくとも1つが光吸収透過特性を有していればよい。
Claims (7)
- 光源と、
有機半導体層を含む薄膜トランジスタと、
前記光源から生じた光が前記有機半導体層に至る経路に配置され、その有機半導体層の光吸収波長域のうちの少なくとも一部を含む波長域の光を吸収すると共にそれ以外の波長域の光を透過する光吸収透過層と
を備え、
前記有機半導体層は、所定の有機半導体骨格を含む有機半導体材料を含有し、
前記光吸収透過層は、前記有機半導体骨格を含む材料を含有する、
電子機器。 - 前記光吸収透過層の光吸収波長域は、前記有機半導体層の吸収スペクトルに現れる1または2以上の吸収ピークのうちの少なくとも1つに対応する波長域を含む、
請求項1記載の電子機器。 - 前記光吸収透過層は絶縁層である、
請求項1または請求項2に記載の電子機器。 - 前記光吸収透過層は前記光源と前記有機半導体層との間に配置されている、
請求項1ないし請求項3のいずれか1項に記載の電子機器。 - 前記光源から生じた光が前記有機半導体層に至る経路に配置され、その光源から生じる光を遮蔽する光遮蔽層を備えた、
請求項1ないし請求項4のいずれか1項に記載の電子機器。 - 前記光遮蔽層は非光透過性の電極である、
請求項5記載の電子機器。 - 有機半導体層を含む薄膜トランジスタと、
外部からの光が前記有機半導体層に至る経路に配置され、その有機半導体層の光吸収波長域のうちの少なくとも一部を含む波長域の光を吸収すると共にそれ以外の波長域の光を透過する光吸収透過層と
を備え、
前記有機半導体層は、所定の有機半導体骨格を含む有機半導体材料を含有し、
前記光吸収透過層は、前記有機半導体骨格を含む材料を含有する、
半導体基板。
Priority Applications (3)
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JP2011183985A JP6040518B2 (ja) | 2011-08-25 | 2011-08-25 | 電子機器および半導体基板 |
US13/587,293 US8766266B2 (en) | 2011-08-25 | 2012-08-16 | Electronic device and semiconductor substrate |
CN201210295862.2A CN102956824B (zh) | 2011-08-25 | 2012-08-17 | 电子装置和半导体基板 |
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JP2011183985A JP6040518B2 (ja) | 2011-08-25 | 2011-08-25 | 電子機器および半導体基板 |
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JP2013045970A JP2013045970A (ja) | 2013-03-04 |
JP6040518B2 true JP6040518B2 (ja) | 2016-12-07 |
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US (1) | US8766266B2 (ja) |
JP (1) | JP6040518B2 (ja) |
CN (1) | CN102956824B (ja) |
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TWI567996B (zh) * | 2014-02-18 | 2017-01-21 | 緯創資通股份有限公司 | 電晶體結構及其製作方法 |
CN104600081A (zh) * | 2014-12-31 | 2015-05-06 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板、显示装置 |
GB2548357A (en) * | 2016-03-14 | 2017-09-20 | Flexenable Ltd | Pixel driver circuit |
DE102016123154A1 (de) | 2016-11-30 | 2018-05-30 | Carl Zeiss Microscopy Gmbh | Bestimmung der Anordnung eines Probenobjekts mittels winkelselektiver Beleuchtung |
CN106887438B (zh) * | 2017-02-24 | 2020-04-17 | 京东方科技集团股份有限公司 | 阵列基板、其制作方法及显示装置 |
CN108628038B (zh) * | 2018-06-28 | 2021-02-26 | 京东方科技集团股份有限公司 | 发光晶体管及其发光方法、阵列基板和显示装置 |
TWI823669B (zh) * | 2022-11-08 | 2023-11-21 | 友達光電股份有限公司 | 具有穿透區與非穿透區的顯示面板 |
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JPH09160014A (ja) * | 1995-12-14 | 1997-06-20 | Casio Comput Co Ltd | アクティブマトリクス型液晶表示素子 |
JP2000174277A (ja) * | 1998-12-01 | 2000-06-23 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
JP2002108250A (ja) | 2000-09-29 | 2002-04-10 | Sharp Corp | アクティブマトリックス駆動型自発光表示装置及びその製造方法 |
KR101090250B1 (ko) | 2004-10-15 | 2011-12-06 | 삼성전자주식회사 | 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법 |
KR100652055B1 (ko) * | 2004-12-03 | 2006-12-01 | 엘지.필립스 엘시디 주식회사 | 유기 박막 트랜지스터, 그 제조방법, 및 그를 이용한액정표시소자 |
JP5092666B2 (ja) * | 2006-10-27 | 2012-12-05 | 富士ゼロックス株式会社 | 無端ベルトおよび画像形成装置 |
JP2008135615A (ja) * | 2006-11-29 | 2008-06-12 | Sony Corp | 有機半導体素子および表示装置 |
JP4591451B2 (ja) * | 2007-01-10 | 2010-12-01 | ソニー株式会社 | 半導体装置および表示装置 |
JP5277675B2 (ja) * | 2007-07-11 | 2013-08-28 | 株式会社リコー | 有機薄膜トランジスタの製造方法 |
JP4626659B2 (ja) * | 2008-03-13 | 2011-02-09 | ソニー株式会社 | 表示装置 |
JP2011012001A (ja) * | 2009-07-01 | 2011-01-20 | Sony Corp | アンタントレン系化合物及び半導体装置 |
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2012
- 2012-08-16 US US13/587,293 patent/US8766266B2/en not_active Expired - Fee Related
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US20130048993A1 (en) | 2013-02-28 |
US8766266B2 (en) | 2014-07-01 |
CN102956824B (zh) | 2016-12-21 |
JP2013045970A (ja) | 2013-03-04 |
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