JP6028515B2 - イオンビーム照射装置 - Google Patents

イオンビーム照射装置 Download PDF

Info

Publication number: JP6028515B2
Authority: JP; Japan
Prior art keywords: ion beam; section; shielding part; mask; shielding
Prior art date: 2012-10-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2012231235A

Other languages

English (en)

Japanese (ja)

Other versions

JP2014082174A (ja

Inventor

マグダレノジュニアヴァスケズ

高橋　正人

正人高橋

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Nissin Ion Equipment Co Ltd

Original Assignee

Nissin Ion Equipment Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2012-10-18

Filing date

2012-10-18

Publication date

2016-11-16

2012-10-18 Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd

2012-10-18 Priority to JP2012231235A priority Critical patent/JP6028515B2/ja

2013-07-08 Priority to KR1020130079752A priority patent/KR101420058B1/ko

2014-05-08 Publication of JP2014082174A publication Critical patent/JP2014082174A/ja

2016-11-16 Application granted granted Critical

2016-11-16 Publication of JP6028515B2 publication Critical patent/JP6028515B2/ja

Status Active legal-status Critical Current

2032-10-18 Anticipated expiration legal-status Critical

Links

238000010884 ion-beam technique Methods 0.000 title claims description 165
239000000758 substrate Substances 0.000 claims description 53
238000010586 diagram Methods 0.000 description 12
238000012545 processing Methods 0.000 description 11
101100220857 Arabidopsis thaliana CLPB1 gene Proteins 0.000 description 9
101150093682 DLT1 gene Proteins 0.000 description 9
230000008859 change Effects 0.000 description 9
238000009826 distribution Methods 0.000 description 8
150000002500 ions Chemical class 0.000 description 7
239000011521 glass Substances 0.000 description 6
238000000034 method Methods 0.000 description 6
230000001678 irradiating effect Effects 0.000 description 5
238000007493 shaping process Methods 0.000 description 5
206010057362 Underdose Diseases 0.000 description 4
238000005468 ion implantation Methods 0.000 description 4
230000007423 decrease Effects 0.000 description 2
238000013461 design Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
230000007704 transition Effects 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000007812 deficiency Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000007737 ion beam deposition Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
230000032258 transport Effects 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
- H01J37/165—Means associated with the vessel for preventing the generation of or for shielding unwanted radiation, e.g. X-rays
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Electron Sources, Ion Sources (AREA)

JP2012231235A 2012-10-18 2012-10-18 イオンビーム照射装置 Active JP6028515B2 (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP2012231235A JP6028515B2 (ja)	2012-10-18	2012-10-18	イオンビーム照射装置
KR1020130079752A KR101420058B1 (ko)	2012-10-18	2013-07-08	마스크 및 이온빔 조사 장치

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2012231235A JP6028515B2 (ja)	2012-10-18	2012-10-18	イオンビーム照射装置

Publications (2)

Publication Number	Publication Date
JP2014082174A JP2014082174A (ja)	2014-05-08
JP6028515B2 true JP6028515B2 (ja)	2016-11-16

Family

ID=50655336

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2012231235A Active JP6028515B2 (ja)	2012-10-18	2012-10-18	イオンビーム照射装置

Country Status (2)

Country	Link
JP (1)	JP6028515B2 (ko)
KR (1)	KR101420058B1 (ko)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH07312193A (ja) *	1994-05-17	1995-11-28	Nissin Electric Co Ltd	イオン注入装置用の可変絞り装置
JP4901203B2 (ja) *	2005-12-12	2012-03-21	東芝モバイルディスプレイ株式会社	イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置
JP2011165421A (ja)	2010-02-08	2011-08-25	Nissin Ion Equipment Co Ltd	イオンビーム照射方法およびイオンビーム照射装置
JP2011192583A (ja) *	2010-03-16	2011-09-29	Nissin Ion Equipment Co Ltd	イオンビーム照射装置
JP2011192582A (ja) *	2010-03-16	2011-09-29	Nissin Ion Equipment Co Ltd	イオンビーム照射装置
US20120056107A1 (en) *	2010-09-08	2012-03-08	Varian Semiconductor Equipment Associates, Inc.	Uniformity control using ion beam blockers

2012
- 2012-10-18 JP JP2012231235A patent/JP6028515B2/ja active Active
2013
- 2013-07-08 KR KR1020130079752A patent/KR101420058B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
JP2014082174A (ja)	2014-05-08
KR101420058B1 (ko)	2014-07-16
KR20140049923A (ko)	2014-04-28

Legal Events

Date	Code	Title	Description
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2016-04-27	A521	Request for written amendment filed	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160427
2016-09-14	TRDD	Decision of grant or rejection written
2016-09-20	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160920
2016-10-24	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161003
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