JP6002725B2 - 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 - Google Patents
印刷可能な半導体構造、並びに関連する製造方法及び組立方法 Download PDFInfo
- Publication number
- JP6002725B2 JP6002725B2 JP2014177486A JP2014177486A JP6002725B2 JP 6002725 B2 JP6002725 B2 JP 6002725B2 JP 2014177486 A JP2014177486 A JP 2014177486A JP 2014177486 A JP2014177486 A JP 2014177486A JP 6002725 B2 JP6002725 B2 JP 6002725B2
- Authority
- JP
- Japan
- Prior art keywords
- printable semiconductor
- semiconductor element
- bridge
- elements
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 379
- 238000000034 method Methods 0.000 title claims description 203
- 238000004519 manufacturing process Methods 0.000 title claims description 58
- 238000012546 transfer Methods 0.000 claims description 148
- 239000000758 substrate Substances 0.000 claims description 141
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229920001971 elastomer Polymers 0.000 claims description 33
- 239000000806 elastomer Substances 0.000 claims description 33
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 28
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 26
- 238000010023 transfer printing Methods 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000012141 concentrate Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 223
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 119
- 229910052710 silicon Inorganic materials 0.000 description 110
- 239000010703 silicon Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 101
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 89
- 238000005530 etching Methods 0.000 description 78
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 77
- 239000010410 layer Substances 0.000 description 68
- 229920003023 plastic Polymers 0.000 description 67
- 239000004033 plastic Substances 0.000 description 67
- 230000008569 process Effects 0.000 description 48
- 238000012545 processing Methods 0.000 description 45
- 230000037230 mobility Effects 0.000 description 35
- 229920000139 polyethylene terephthalate Polymers 0.000 description 27
- 239000005020 polyethylene terephthalate Substances 0.000 description 27
- 239000000243 solution Substances 0.000 description 27
- 238000007639 printing Methods 0.000 description 23
- 239000008186 active pharmaceutical agent Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 22
- 230000005669 field effect Effects 0.000 description 22
- 239000004814 polyurethane Substances 0.000 description 22
- 238000001878 scanning electron micrograph Methods 0.000 description 22
- 239000010409 thin film Substances 0.000 description 22
- 239000010931 gold Substances 0.000 description 21
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 20
- 229920002635 polyurethane Polymers 0.000 description 19
- 230000010354 integration Effects 0.000 description 17
- 238000005452 bending Methods 0.000 description 15
- 238000002508 contact lithography Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 14
- 239000002070 nanowire Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 239000000523 sample Substances 0.000 description 12
- 238000013459 approach Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 238000003491 array Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 239000007858 starting material Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000003486 chemical etching Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 7
- 229920002457 flexible plastic Polymers 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000002074 nanoribbon Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- -1 but not limited to Substances 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 238000003672 processing method Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000000347 anisotropic wet etching Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000000879 optical micrograph Methods 0.000 description 5
- 230000010363 phase shift Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000013590 bulk material Substances 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002159 nanocrystal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 239000003637 basic solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 238000002174 soft lithography Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 235000017060 Arachis glabrata Nutrition 0.000 description 2
- 241001553178 Arachis glabrata Species 0.000 description 2
- 235000010777 Arachis hypogaea Nutrition 0.000 description 2
- 235000018262 Arachis monticola Nutrition 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 244000309464 bull Species 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 235000020232 peanut Nutrition 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002520 smart material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 229920002725 thermoplastic elastomer Polymers 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UQTCSFPVHNDUOG-UHFFFAOYSA-N azanium 4-carboxy-2,6-dihydroxyphenolate Chemical compound [NH4+].OC(=O)C1=CC(O)=C([O-])C(O)=C1 UQTCSFPVHNDUOG-UHFFFAOYSA-N 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- FACXGONDLDSNOE-UHFFFAOYSA-N buta-1,3-diene;styrene Chemical compound C=CC=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 FACXGONDLDSNOE-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- YACLQRRMGMJLJV-UHFFFAOYSA-N chloroprene Chemical compound ClC(=C)C=C YACLQRRMGMJLJV-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005232 molecular self-assembly Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001527 near-field phase shift lithography Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Description
この場合、以下の通りである。
ここで、Jは、印加バイアス電圧(V)での順方向ダイオード電流密度を表わしており、kはボルツマン定数であり、Tは絶対温度(すなわち、実験では298K)であり、ψBはショットキーバリア高さであり、A**はGaAsにおける有効リチャードソン定数(すなわち、8.64A・cm−2・K−2)である。InJとバイアス(V)との間の関係をプロットすることにより(挿入図)、直線(一次)関係(挿入図の直線)の切片及び傾きから飽和電流J0及び理想ファクタnが決定される。ψBの量は方程式(2)を用いて概算される。ψB及びnはショットキー界面特性の評価基準として一般に使用される。これらの双方は、金属とGaAsとの間の界面帯電状態に大きく依存している。すなわち、帯電状態の増大は、ψBの減少及びn値の増大を引き起こす。この作業で製造されるダイオードの場合、ψB及びnは、図4の(d)の挿入画から、各々512meV及び1.21であると求められる。これらデバイスは、ウエハ上に形成されるダイオードと比べて幾分低いショットキーバリア(約800meVに対して512meV)及び大きい理想ファクタ(約1.10に対して1.21)を有する。
この方程式では、空乏層が平行板コンデンサとして機能すると仮定して、
である。エッジフリンジングキャパシタンス及び幾何学的フリンジングキャパシタンスは各々以下によって決定される。
ここで、150μm及び200μmは、ソースパッド又はドレインパッドの何れかの幅及び長さである。K(k)は第1種の楕円積分であり、
であり、CGS、すなわち、ゲートとソースとの間のキャパシタンスは、三つの全ての種類のキャパシタンスを含んでおり、一方、CDS及びCDGは、エッジフリンジングキャパシタンス及び幾何学的フリンジングキャパシタンスだけを含でいる。Cedge及びCgeometricの寄与は、殆どの場合、シミュレーション結果に対する著しい影響無く無視し得る。これは、それらの寄与がゲート長に適したCdepletionよりもかなり小さいためである。このモデルは、ゲート長に伴うfTの変化を含むプラスチック上のワイヤ配列デバイスの挙動を考慮している。図8の(c)は、ゲート長が異なり、且つ、チャネル長が50μmのGaAsワイヤMESFETの測定された(記号)fTと計算された(破線)fTとを比較している。このモデリングは、ゲート長を減少させることによって、或いは、GaAsマザーウエハ中の層の構造を更に最適化することによってfTを大きく増大させることができることを示唆している。
(1)“Guided molecular self−assembly:a review of recent effort”, Jiyun C Huie Smart Mater.Struct.(2003) 12,264−271
(2)“Large−Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems”, Whang,D.; Jin,S.; Wu,Y.; Lieber,C.M.Nano Lett.(2003) 3(9),1255−1259
(3)“Directed Assembly of One−Dimensional Nanostructures into Functional Networks”, Yu Huang,Xiangfeng Duan,Qingqiao Wei,and Charles M.Lieber,Science (2001) 291,630−633
(4)“Electric−field assisted assembly and alignment of metallic nanowires”, Peter A.Smithら,Appl.Phys.Lett.(2000) 77(9),1399−1401
[1] a) Y. Xia, P. Yang,Y. Sun, Y. Wu, B.Mayers, B. Gates, Y. Yin, F. Kim, H. Yan, Adv. Mater. 2003,15, 353. b) C. M.Lieber, Mater. Res. Soc. Bull. 2003, 28, 486. c) M. C.McAlpine, R. S.Friedman, C. M. Lieber, Proc. IEEE 2005, 93, 1357. d) M. Law, J.Goldberger, P.Yang, Ann. Rev. Mater. Res. 2004, 34, 83. e) P. Yang, Mater. Res.Soc. Bull.2005, 30, 85. f) Z. R. Dai, Z. W. Pan, Z. L. Wang, Adv. F
unct Mater. 2003, 13,9.g) special issue on nanostructured advanced materials, Pure Appl. Chem.2002,74(9).
[2] a) Y. Yin, A. P.Alivisatos, Nature,2005, 437, 664. b) I. Gur, N. A. Fromer, M. L. Geier,A. P.Alivisatos, Science, 2005, 310, 462. c) L. Samuelson, M. T. Bjork, K.Depper, M.Larsson, B. J. Ohlsson, N. Panev, A. I. Persson, N. Skold, C. Thelander, L. R.Wallenberg, Physica E 2004, 21, 560.
[3] a) L. A. Bauer, N.S. Birenbaum, G. J.Meyer, J. Mater. Chem. 2004, 14, 517.b) Y. Cui, Q. Wei, H.Park, C. M. Lieber,Science 2001, 293, 1289.
[4] Z. Tang, N. A.Kotov, Adv. Mater. 2005,17, 951.
[5] X. Duan, C. Niu, V.Sahi, J. Chen, J. W.Parce, S. Empedocles, J. L. Goldman, Nature 2003, 425, 274.
[6] R. S. Friedman, M.C. McAlpine, D. S. Ricketts, D. Ham, C. M. Lieber, Nature 2005, 434, 1085.
[7] E. Menard, K. J.Lee, D.-Y. Khang, R. G.Nuzzo, J. A. Rogers, Appl. Phys. Lett. 2004, 84, 5398.
[8] a) S. Mack, M. A.Meitl, A. Baca, inpreparation. b) Y. Sun, S. Mack, J. A. Rogers,Proc. Intl.Electron DeviceMeeting(IEEE), 2005, in press.
[9] a) E. Menard, R. G.Nuzzo, J. A. Rogers,Appl. Phys. Lett. 2005, 86, 093507.b) Z.-T. Zhu, E. Menard,K. Hurley, R. G. Nuzzo, J. A.Rogers, Appl. Phys. Lett. 2005, 86, 133507.
[10] a) Y. Sun, J. A.Rogers, Nano Lett.2004, 4, 1953. b) Y. Sun, D.-Y. Khang, F. Hua, K. Hurley, R.G. Nuzzo, J. A. Rogers, Adv.Fund Mater. 2005, 15, 30.
[11] Y. Sun, S. Kim, I.Adesida, J. A. Rogers, Appl. Phys. Lett. 2005, 87, 083501.
[12] Y. Sun, H.-S. Kim,E. Menard, S. Kim, G.Chen, I. Adesida, R. Dettmer, R. Cortez, A. Tewksbury, J.A. Rogers, Appl.Phys. Lett., submitted.
[13] R. H. Reuss, B. R.Chalamala, A.Moussessian, M. G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M.Hatalis, D.Temple, G. Moddel, B. J. Eliasson, M. J. Estes, J. Kunze, E. S.Handy, E. S.Harmon, D. B. Salzman, J. M. Woodall, M. A. Alam, J. Y.
Murthy, S. C. Jacobsen,M. Olivier, D.Markus, P. M. Campbell, E. Snow, Proc. IEEE 2005, 39, 1239.
[14] D. C. Duffy, C.McDonald, O. J. A.Schueller, G. M. Whitesides, Anal. Chem. 1998, 70, 4974.
[15] S. M. Sze,Semiconductor Devices,Physics and Technology (Wiley, New York, 1985).
[16] G. Eftekhari,Phys. Status SolidiA-Appl. Res. 1993, 140, 189.
[17] H.-l. Chen, C.-K.Hsiung, Y.-l Chou,Semicond. Sci. Technol. 2003, 18, 620.
[18] S. Forment, M.Biber, R. L. vanMeirhaeghe, W. P. Leroy, A. Turut, Semicond. Sci Technol. 2004,19, 1391.
[19] L. Stephen, S. E.Butner, GalliumArsenide Digital lntergrated Circuit Design. (McGraw-Hill, NewYork, 1990).
1R. H. Reuss, B. R. Chalamala, A. Moussessian,M.G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M. Hatalis, D. Temple, G.Moddel,B. J. Eliasson, M. J. Estes, J. Kunze, E. S.
Handy, E. S. Harmon, D.B. Salzman, J. M.Woodall, M. A. Alam, J. Y. Murthy, S. C.Jacobsen, M. Olivier,D. Markus, P. M.Campbell, and E. Snow, Proc. IEEE 39, 1209 (2005).
2K. Nomura, H. Ohta, A. Takagi, T. Kamiya,M.Hirano, and H. Hosono, Nature 432, 488 (2004).
3D. B. Mitzi, L. L. Kosbar, C. E. Murray,M.Copel, and A. Afzali, Nature 428, 299 (2004).
4S. Ucjikoga, MRS Bull. 27, 881 (2002).
5X. Duang, C. Niu, V. Sahi, J. Chen, J. W.Parce,S. Empedocies, and J. L. Goldman,Nature 425, 274 (2003).
6R. S. Friedman, M. C. McAlpine, D. S. Ricketts,D. Ham, and C. M. Lieber, Nature434,1085 (2005).
7E. Menard, K. J. Lee, D.-Y. Khang, R. G.Nuzzo,and J. A. Rogers, Appl. Phys. Lett. 84,5398 (2004).
8E. Menard, R. G. Nuzzo, and J. A. Rogers,Appl.Phys. Lett. 86, 093507 (2005).
9Z.-T. Zhu, E. Menard, K. Hurley, R. G. Nuzzo,andJ. A. Rogers, Appl. Phys. Lett. 86,133507 (2005).
10Y. Sun, S. Kim, I. Adesida, and J. A. Rogers,Appl. Phys. Lett. 87, 083501 (2005).
11Y. Sun, and J. A. Rogers, J. A. Nano Lett.4,1953 (2004).
12Y. Sun, D.-Y. Khang, F. Hua, K. Hurley, R.G.Nuzzo, and J. A. Rogers, Adv. Funct. Mater. 15, 30 (2005).
13A. S. Sedra,and K. C. Smith, MicroelectronicCircuits (Oxford University Press, New York,1998).
14L. Stephen, and S. E. Butner, GalliumArsenideDigital lntergrated Circuit Design (McGraw-Hill, New York, 1990).
15M. C, Lau, Small Signal EquivalentCircuitExtraction from a Gallium Arsenide MESFET device (M.S. thesis,VirginiaPolytechnic Institution and State University, Blacksburg, VA, 1997).
16L. B. Freund, Intl. J. Solids Struct. 37,185(2000).
17C. P. Kuo, S. K. Vong, R. M. Cohen, and G.B.Stringfellow, J. Appl. Phys. 57, 5428 (1985).
1X. Duan, C. Niu, V. Sahi, J. Chen, J. W.Parce,S. Empedocles, J. L. Goldman, Nature 425, 274 (2003).
2Y. Huang, X. Duan, Q. Wei, C. M. Lieber,Science291, 630 (2001).
3M. A. Meitl, Y. Zhou, A. Gaur, S. Jeon, M.L.Usrey, M. S. Strano, J. A. Rogers, Nano Lett. 4, No. 9 1643 (2004).
4R. S. Friedman, Nature 434, 1085 (2005).
5E. Menard, K. J. Lee, D.-Y. Khang, R. G.Nuzzoand J. A. Rogers, Appl. Phys. Lett. 84,5398 (2004).
6E. Menard, R.G. Nuzzo and J.A. Rogers,Appl.Phys. Lett. 86, (2005).
7Z.-T. Zhu, E. Menard, K. Hurley, R. G. Nuzzo,J.A. Rogers, Appl. Phys. Lett. 86,133507 (2005).
8Y. Sun, S. Kim, I. Adesida, J. A. Rogers, Appl.Phys. Lett. 87, 083501 (2005).
9K. J. Lee, M. J. Motala, M. A. Meitl, W.R.Childs, E. Menard, A. K. Shim, J. A. Rogers,R. G. Nuzzo, Adv. Mater. 17,2332(2005).
10M. A. Meitl, Z.-T. Zhu, V. Kumar, K. J. Lee,X.Feng, Y. Y. Huang, I. Adesida, R. G. Nuzzo, and J. A. Rogers, Nat. Mater. 5,33(2006).
11D.Y. Khang, H. Jiang, Y. Huang and J.A.Rogers,Science 311, 208 (2006).
12S. R. Forrest, Nature 428, 911 (2004).
13J. A. Rogers, K. E. Paul, R. J. Jackman, G.M.Whitesides, Appl. Phys. Lett. 70, 2658 (1997).
14S. Sze., Semiconductor Devices: PhysicsandTechnology 2nd ed. (Wiley, New York, 2002), pp.190-192.
[1] R. Reuss et al.Proc. IEEE. 2005, 39,1239.
[2] J. A. Rogers, Z.Bao, K. Baldwin, A.Dodabalapur, B. Crone, V. R. Raju, V. Kuck, H. Katz, K.Amundson, J. Ewing, P.Drzaic, Proc. Nat. Acad. Sci. 2001, 98, 4835.
[3] (a) J. H. Schon, S.Berg, C. Kloc, B.Batlogg, Science 2000, 287, 1022. (b) A. Dodabalapur, L.Torsi, H. E. Katz,Science 1995, 268, 270.
[4] B. S. Ong, Y. Wu,P. Liu, S. Gardner, J.Am. Chem. Soc. 2004, 126, 3378.
[5] S. R. Forrest,Nature, 2004, 428, 911.
[6] C. R. Kagan, D. B.Mitzi, C. D.Dimitrakopoulos, Science 1999, 286, 945.
[7] X. Duan, C. Niu, V.Sahi, J. Chen, J. W.Parce, S. Empedocles, J. L. Goldman, Nature, 2003, 425,274.
[8] J. Kwon, D. Kim, H.Cho, K. Park, J.Jung, J. Kim, Y. Park, T. Noguchi, IEEE Trans.Electron. 2005,466, 7.
[9] K. Lee, M. J.Motala, M. A. Meitl, W. R.Childs, E. Menard, A. K. Shim, J. A. Rogers,R. G.Nuzzo, Adv. Mater. 2005, 17,2336.
[10] Z. Zhu, E. Menard,K. Hurley, R. G.Nuzzo, J. A. Rogers, App. Phys. Lett. 2005, 86,133507.
[11] M. A. Meitl, Z.Zhu, V. Kumar, K. Lee,X. Feng, Y. Huang, R. G. Nuzzo, J. A. Rogers, NatureMater. 2006, 5, 33.
[12] D. Khang, H.Jiang, Y. Huang, J. A.Rogers, Science, 2006, 311, 208.
[13] Y. Sun, S. Kim, I.Adesida, J. A. Rogers, App. Phys. Lett. 2005, 87, 083501.
[14] K. Lee, Dr. J.Lee, H. Hwang, J. A.Rogers, R. G. Nuzzo, Small 2005, 1, 1164.
[15] (a) GaN andrelated Materials (Eds.: S.J. Pearton), Gordon and Breach, NewYork,1997.(b)Group III Nitride Semiconductor Compounds (Eds.: B. Gil), Clarendon,Oxford,1998.
[16] (a) U. Mishra, P.Parikh, Y. Wu, Proc.IEEE. 2002, 90, 1022. (b) S. J. Pearton, J. C. Zolper, R.J. Shul, F. Ren, J.Appl. Phys. 1999, 86, 1. (c) S. C. Jain, M. Willander, J.Narayan, R. Van Overstraeten, J. Appl. Phys. 2000, 87, 965.
[17] M. A. Khan, A.Bhattari, J. N. Kuznia,and D. T. Olson, App. Phys. Lett. 1993, 63,1214.
[18] Typical Sianisotropic etch ratios inTMAH and H2O mixtures are reported from 12to 50 in the direction<110>/<111>. Please see to the followingreferences; (a) Fundamentals of Microfabrication, (Ed: M.Madou), CRC Press, NewYork, 1997. (b) D.L. Kendall, Ann. Rev. Mater. Sci 1979, 9, 373.
[19] V. Kumar, L Zhou,D. Selvanathan, and I. Adesida, J. Appl. Phys. 2002, 92, 1712.
[20] Silicon Processingfor the VLSI Era, Vol. 1 : Process Technology, (Ed: S. Wolf, R.N. Tauber)Lattice Press, 1999.
Claims (26)
- 基板の受容面上に複数の印刷可能半導体素子の位置合わせ組み立てを行うための方法であって、
選択された相対的な空間的方向を有し、各々が印刷可能半導体素子と、該印刷可能半導体素子に接続され且つマザーウエハに接続されるブリッジ素子とを備える複数の印刷可能半導体素子構造を設けるステップであって、前記印刷可能半導体素子及び前記ブリッジ素子のそれぞれが前記マザーウエハから少なくとも部分的にアンダーカットされ、前記ブリッジ素子が前記印刷可能半導体素子の第1の端部の全体の幅又は断面積よりも小さく接続される、該ステップと、
前記印刷可能半導体素子を、接触面を有する転写デバイスと接触させるステップであって、前記接触面と前記印刷可能半導体素子との間の接触が前記印刷可能半導体素子の少なくとも一部を前記転写デバイスの前記接触面に結合させる、該ステップと、
前記ブリッジ素子の少なくとも一部の破断を行なうように前記転写デバイスを移動させるステップであって、それにより、前記印刷可能半導体素子の少なくとも一部を前記マザーウエハから前記転写デバイスへと位置合わせ転写し、その結果、その上に前記印刷可能半導体素子の少なくとも一部が配置される前記接触面を形成するステップであって、前記ブリッジ素子は破断の際に破壊点に応力を集中させる鋭い角部を有している、ステップと、
前記接触面上に配置された前記印刷可能半導体素子を前記基板の前記受容面と接触させるステップと、
前記転写デバイスの前記接触面と前記印刷可能半導体素子とを分離させるステップであって、前記印刷可能半導体素子が前記受容面上へ転写されることによって、前記基板の前記受容面上に前記複数の印刷可能半導体素子の位置合わせ組み立てを行う、該ステップと、
を備える方法。 - 前記受容面上に組み立てられた前記印刷可能半導体素子の相対的な空間的方向を5ミクロンの範囲内に維持する、請求項1に記載の方法。
- 前記受容面上に組み立てられた前記印刷可能半導体素子の相対的な空間的方向を0.1ミクロンの範囲内に維持する、請求項1に記載の方法。
- 5ミクロンの範囲で、予め選択された前記受容基板の特定の領域に対して前記印刷可能半導体素子を組み立てる、請求項1に記載の方法。
- 500ナノメートルの範囲で、予め選択された前記受容基板の特定の領域に対して前記印刷可能半導体素子を組み立てる、請求項1に記載の方法。
- 前記印刷可能半導体素子を転写デバイスと接触させる前記ステップ、前記転写デバイスを移動させる前記ステップ、前記接触面上に配置された前記印刷可能半導体素子を前記基板の前記受容面と接触させる前記ステップ、及び前記転写デバイスの前記接触面と前記印刷可能半導体素子とを分離させる前記ステップが、乾式転写印刷を使用して行われる、請求項1に記載の方法。
- その上に前記印刷可能半導体素子が配置される前記接触面と前記基板の前記受容面との間で形状適合接触が確立される、請求項1に記載の方法。
- 前記転写デバイスが形状適合可能な転写デバイスである、請求項1に記載の方法。
- 前記転写デバイスがエラストマスタンプである、請求項8に記載の方法。
- 前記転写デバイスがPDMSスタンプである、請求項8に記載の方法。
- 前記印刷可能半導体素子及び前記ブリッジ素子が前記マザーウエハから完全にアンダーカットされる、請求項1に記載の方法。
- 前記ブリッジ素子、前記印刷可能半導体素子、及び、前記マザーウエハが、単一構造を構成する、請求項1に記載の方法。
- 前記ブリッジ素子が接着剤を介して前記印刷可能半導体素子に接続される、請求項1に記載の方法。
- 前記ブリッジ素子が接着剤を介して前記マザーウエハに接続される、請求項1に記載の方法。
- 前記ブリッジ素子が接着剤を介して前記印刷可能半導体素子に接続され、前記ブリッジ素子が接着剤を介して前記マザーウエハに接続される、請求項1に記載の方法。
- 複数の前記ブリッジ素子が前記印刷可能半導体素子の各々に接続される、請求項1に記載の方法。
- 前記ブリッジ素子の各々が、約100ナノメートルから約1000ミクロンの範囲から選択される平均幅と、約1ナノメートルから約1000ミクロンの範囲から選択される平均厚さと、約100ナノメートルから約1000ミクロンの範囲から選択される平均長さとを有する、請求項1に記載の方法。
- 前記ブリッジ素子の各々が、該ブリッジ素子が接続されている前記印刷可能半導体素子の平均幅よりも少なくとも2倍小さい平均幅を有する、請求項1に記載の方法。
- 前記ブリッジ素子の各々が、該ブリッジ素子が接続されている前記印刷可能半導体素子の平均幅よりも少なくとも10倍小さい平均幅を有する、請求項1に記載の方法。
- 前記ブリッジ素子の各々が、該ブリッジ素子が接続されている前記印刷可能半導体素子の平均厚さよりも少なくとも1.5倍小さい平均厚さを有する、請求項1に記載の方法。
- 前記印刷可能半導体素子が、前記転写デバイスへの前記位置合わせ転写を高めるように機能化される、請求項1に記載の方法。
- 親水基を前記印刷可能半導体素子の表面に対して加えて、又は、前記印刷可能半導体素子の表面を金属でコーティングして、前記印刷可能半導体素子の前記転写デバイスの前記接触面に対する結合を向上する、請求項21に記載の方法。
- 前記印刷可能半導体素子の各々が、第1の端部及び第2の端部で終端する長手方向主軸線に沿って所定の長さにわたって延びる半導体リボンを備え、
前記ブリッジ素子が前記第1の端部に対して接続され、更なるブリッジ素子が前記第2の端部及び前記マザーウエハに対して接続される、請求項1に記載の方法。 - 前記第1の端部が第1の断面積を有し、前記第2の端部が第2の断面積を有し、
前記ブリッジ素子が、前記第1の端部の前記第1の断面積の50%よりも少ない断面部分に対して接続され、
前記更なるブリッジ素子が、前記第2の端部の前記第2の断面積の50%よりも少ない断面部分に対して接続されている、
請求項23に記載の方法。 - 発光ダイオードの配列又は太陽電池の配列を製造する方法を備える、請求項1に記載の方法。
- ダイオードの配列、トランジスタの配列又は集積電気回路を製造する方法を備える、請求項1に記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
USPCT/US2005/019354 | 2005-06-02 | ||
US11/145,542 | 2005-06-02 | ||
PCT/US2005/019354 WO2005122285A2 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
US11/145,574 | 2005-06-02 | ||
US11/145,574 US7622367B1 (en) | 2004-06-04 | 2005-06-02 | Methods and devices for fabricating and assembling printable semiconductor elements |
US11/145,542 US7557367B2 (en) | 2004-06-04 | 2005-06-02 | Stretchable semiconductor elements and stretchable electrical circuits |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012246602A Division JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015019095A JP2015019095A (ja) | 2015-01-29 |
JP6002725B2 true JP6002725B2 (ja) | 2016-10-05 |
Family
ID=37787994
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514820A Active JP5164833B2 (ja) | 2005-06-02 | 2006-06-01 | 印刷可能な半導体構造の製造方法 |
JP2006154975A Active JP5297581B2 (ja) | 2005-06-02 | 2006-06-02 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
JP2012246602A Active JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
JP2013095896A Active JP5701331B2 (ja) | 2005-06-02 | 2013-04-30 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
JP2014177486A Active JP6002725B2 (ja) | 2005-06-02 | 2014-09-01 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008514820A Active JP5164833B2 (ja) | 2005-06-02 | 2006-06-01 | 印刷可能な半導体構造の製造方法 |
JP2006154975A Active JP5297581B2 (ja) | 2005-06-02 | 2006-06-02 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
JP2012246602A Active JP5734261B2 (ja) | 2005-06-02 | 2012-11-08 | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 |
JP2013095896A Active JP5701331B2 (ja) | 2005-06-02 | 2013-04-30 | エラストマースタンプへの接着の動的コントロールによるパターン転送印刷 |
Country Status (3)
Country | Link |
---|---|
EP (2) | EP2937896B1 (ja) |
JP (5) | JP5164833B2 (ja) |
KR (2) | KR101308548B1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2925221B1 (fr) * | 2007-12-17 | 2010-02-19 | Commissariat Energie Atomique | Procede de transfert d'une couche mince |
JP5743553B2 (ja) * | 2008-03-05 | 2015-07-01 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | 伸張可能及び折畳み可能な電子デバイス |
KR101004849B1 (ko) | 2008-09-02 | 2010-12-28 | 삼성전기주식회사 | 박막소자 제조방법 |
KR101077789B1 (ko) | 2009-08-07 | 2011-10-28 | 한국과학기술원 | Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이 |
KR101113692B1 (ko) | 2009-09-17 | 2012-02-27 | 한국과학기술원 | 태양전지 제조방법 및 이에 의하여 제조된 태양전지 |
KR101221871B1 (ko) | 2009-12-07 | 2013-01-15 | 한국전자통신연구원 | 반도체 소자의 제조방법 |
US9442285B2 (en) * | 2011-01-14 | 2016-09-13 | The Board Of Trustees Of The University Of Illinois | Optical component array having adjustable curvature |
KR102495290B1 (ko) | 2012-12-28 | 2023-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP6124051B2 (ja) * | 2013-02-01 | 2017-05-10 | 国立大学法人九州工業大学 | 細胞培養シート、およびその製造方法、並びにこれを用いた細胞培養容器 |
JP6078920B2 (ja) * | 2013-02-13 | 2017-02-15 | 国立大学法人広島大学 | 薄膜形成方法、及びそれを用いて作製した半導体基板ならびに電子デバイス |
US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
DE102013006624B3 (de) * | 2013-04-18 | 2014-05-28 | Forschungszentrum Jülich GmbH | Hochfrequenzleiter mit verbesserter Leitfähigkeit und Verfahren seiner Herstellung |
US9449753B2 (en) | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
TWI660520B (zh) * | 2014-01-15 | 2019-05-21 | 美國密西根州立大學 | 經由印刷方法整合磊晶剝離太陽能電池與小型拋物線集光器陣列 |
US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
MY182253A (en) * | 2014-07-20 | 2021-01-18 | X Celeprint Ltd | Apparatus and methods for micro-transfer-printing |
US10522389B2 (en) | 2014-10-28 | 2019-12-31 | Analog Devices, Inc. | Transfer printing method |
US10748793B1 (en) | 2019-02-13 | 2020-08-18 | X Display Company Technology Limited | Printing component arrays with different orientations |
TWI728364B (zh) * | 2019-05-21 | 2021-05-21 | 國立陽明交通大學 | 氮化鎵異質整合於矽基板之半導體結構及其製造方法 |
US11062936B1 (en) | 2019-12-19 | 2021-07-13 | X Display Company Technology Limited | Transfer stamps with multiple separate pedestals |
KR102300920B1 (ko) * | 2020-11-09 | 2021-09-13 | 한국과학기술원 | InP 기판을 이용한 소자 제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US678752A (en) * | 1901-03-18 | 1901-07-16 | Hugh P Mcardle | Automatic means for throwing switches. |
JPS59232437A (ja) * | 1983-06-15 | 1984-12-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
US4766670A (en) | 1987-02-02 | 1988-08-30 | International Business Machines Corporation | Full panel electronic packaging structure and method of making same |
JPH03110855A (ja) * | 1989-09-26 | 1991-05-10 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
US5376561A (en) * | 1990-12-31 | 1994-12-27 | Kopin Corporation | High density electronic circuit modules |
JP3372258B2 (ja) * | 1995-08-04 | 2003-01-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | リソグラフィ・プロセス用のスタンプ |
JP3761269B2 (ja) * | 1996-12-27 | 2006-03-29 | シチズン時計株式会社 | 液晶表示装置の製造方法 |
FR2781925B1 (fr) * | 1998-07-30 | 2001-11-23 | Commissariat Energie Atomique | Transfert selectif d'elements d'un support vers un autre support |
US6787052B1 (en) * | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
JP4538951B2 (ja) * | 2000-12-15 | 2010-09-08 | ソニー株式会社 | 素子の選択転写方法、画像表示装置の製造方法及び液晶表示装置の製造方法 |
TW574753B (en) * | 2001-04-13 | 2004-02-01 | Sony Corp | Manufacturing method of thin film apparatus and semiconductor device |
EP2565924B1 (en) * | 2001-07-24 | 2018-01-10 | Samsung Electronics Co., Ltd. | Transfer method |
JP2003197881A (ja) | 2001-12-27 | 2003-07-11 | Seiko Epson Corp | 半導体集積回路、半導体集積回路の製造方法、半導体素子部材、電気光学装置、電子機器 |
JP4757469B2 (ja) * | 2002-05-17 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6805809B2 (en) * | 2002-08-28 | 2004-10-19 | Board Of Trustees Of University Of Illinois | Decal transfer microfabrication |
JP4378672B2 (ja) * | 2002-09-03 | 2009-12-09 | セイコーエプソン株式会社 | 回路基板の製造方法 |
JP4042608B2 (ja) * | 2003-04-01 | 2008-02-06 | セイコーエプソン株式会社 | トランジスタ及び電子機器 |
US7078298B2 (en) * | 2003-05-20 | 2006-07-18 | Sharp Laboratories Of America, Inc. | Silicon-on-nothing fabrication process |
JP4341296B2 (ja) * | 2003-05-21 | 2009-10-07 | 富士ゼロックス株式会社 | フォトニック結晶3次元構造体の製造方法 |
JP4877870B2 (ja) * | 2004-01-30 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US11394720B2 (en) | 2019-12-30 | 2022-07-19 | Itron, Inc. | Time synchronization using trust aggregation |
-
2006
- 2006-06-01 KR KR1020127032629A patent/KR101308548B1/ko active IP Right Grant
- 2006-06-01 EP EP15163216.3A patent/EP2937896B1/en active Active
- 2006-06-01 EP EP22164385.1A patent/EP4040474A1/en active Pending
- 2006-06-01 JP JP2008514820A patent/JP5164833B2/ja active Active
- 2006-06-01 KR KR1020087000080A patent/KR101269566B1/ko active IP Right Grant
- 2006-06-02 JP JP2006154975A patent/JP5297581B2/ja active Active
-
2012
- 2012-11-08 JP JP2012246602A patent/JP5734261B2/ja active Active
-
2013
- 2013-04-30 JP JP2013095896A patent/JP5701331B2/ja active Active
-
2014
- 2014-09-01 JP JP2014177486A patent/JP6002725B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007027693A (ja) | 2007-02-01 |
KR20080015921A (ko) | 2008-02-20 |
JP2009508322A (ja) | 2009-02-26 |
JP2013080934A (ja) | 2013-05-02 |
EP2937896B1 (en) | 2022-05-04 |
EP4040474A1 (en) | 2022-08-10 |
JP2015019095A (ja) | 2015-01-29 |
KR20130006712A (ko) | 2013-01-17 |
JP5734261B2 (ja) | 2015-06-17 |
EP2937896A1 (en) | 2015-10-28 |
JP5297581B2 (ja) | 2013-09-25 |
KR101269566B1 (ko) | 2013-06-07 |
JP5164833B2 (ja) | 2013-03-21 |
JP2013183163A (ja) | 2013-09-12 |
JP5701331B2 (ja) | 2015-04-15 |
KR101308548B1 (ko) | 2013-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6002725B2 (ja) | 印刷可能な半導体構造、並びに関連する製造方法及び組立方法 | |
US8039847B2 (en) | Printable semiconductor structures and related methods of making and assembling | |
EP1915774B1 (en) | Printable semiconductor structures and related methods of making and assembling | |
TWI533459B (zh) | 可印刷半導體結構及製造和組合之相關方法 | |
CN101632156B (zh) | 可印刷半导体结构以及相关制造和组装方法 | |
US9761444B2 (en) | Methods and devices for fabricating and assembling printable semiconductor elements | |
KR101347687B1 (ko) | 프린터블 반도체 구조들 및 관련 제조 및 조립 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150529 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A132 Effective date: 20150721 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151015 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20151124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160905 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6002725 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |