JP5996654B2 - Plasma processing equipment - Google Patents

Plasma processing equipment Download PDF

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Publication number
JP5996654B2
JP5996654B2 JP2014531421A JP2014531421A JP5996654B2 JP 5996654 B2 JP5996654 B2 JP 5996654B2 JP 2014531421 A JP2014531421 A JP 2014531421A JP 2014531421 A JP2014531421 A JP 2014531421A JP 5996654 B2 JP5996654 B2 JP 5996654B2
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electrode
holder
plasma
processing chamber
process gas
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JPWO2014030224A1 (en
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正浩 佐波
正浩 佐波
浩幸 上山
浩幸 上山
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JCU Corp
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JCU Corp
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
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  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

本発明は、真空の処理室内でクリーニングやエッチング、表面改質などのプラズマ処理を行うプラズマ処理装置に関する。 The present invention relates to a plasma processing apparatus that performs plasma processing such as cleaning, etching, and surface modification in a vacuum processing chamber.

基板やリードフレーム等の被処理物に対して、プラズマを用いてクリーニング（洗浄）、デスミア、デスカム、エッチング、表面改質などのプラズマ処理を行うプラズマ処理装置が知られている。例えば、半導体素子の電極と基板とを接続するワイヤボンディング工程の前段階では、プラズマ処理によるクリーニング（以下、プラズマ洗浄という）を行い、半導体素子の電極の表面と、基板に形成された接続部（ランド）の表面の汚れを除去し、ボンディングワイヤと接続部との接続強度を向上させている。   2. Description of the Related Art Plasma processing apparatuses that perform plasma processing such as cleaning (cleaning), desmear, descum, etching, and surface modification on an object to be processed such as a substrate and a lead frame are known. For example, in the pre-stage of the wire bonding process for connecting the electrode of the semiconductor element and the substrate, cleaning by plasma treatment (hereinafter referred to as plasma cleaning) is performed, and the surface of the electrode of the semiconductor element and the connection portion ( The dirt on the surface of the land is removed, and the connection strength between the bonding wire and the connection portion is improved.

特許文献１のプラズマ処理装置では、真空の処理室と、この処理室内に配された一対の平板電極とを備え、この平板電極の間に１枚の板状の被処理物を配置して、プラズマ洗浄を行っている。一対の平板電極は、一方が高周波電圧が印加されるＲＦ電極（活性電極）で、他方が接地された接地電極である。被処理物を処理室内にセットした後、十分に減圧してからプロセスガス（例えばアルゴンガス）を導入すると共に、平板電極に電力を供給して、プロセスガスをプラズマ化する。発生したプラズマ中のラジカルやイオンが被処理物の表面に接触ないし衝突することによって表面の汚れが除去される。   The plasma processing apparatus of Patent Document 1 includes a vacuum processing chamber and a pair of flat plate electrodes arranged in the processing chamber, and a single plate-like object to be processed is disposed between the flat plate electrodes. Plasma cleaning is performed. One of the pair of plate electrodes is an RF electrode (active electrode) to which a high-frequency voltage is applied, and the other is a ground electrode that is grounded. After the object to be processed is set in the processing chamber, the process gas (for example, argon gas) is introduced after the pressure is sufficiently reduced, and power is supplied to the plate electrode to convert the process gas into plasma. The radicals and ions in the generated plasma come into contact with or collide with the surface of the object to be processed, thereby removing the surface contamination.

特許文献１のプラズマ処理装置は、いわゆる枚葉式であり、被処理物の処理室への搬入，処理室の減圧，プラズマ洗浄，被処理物処理室からの搬出などの工程を１枚の被処理物ごとに行う必要があり効率が悪い。そこで、複数枚の被処理物を保持したホルダーを処理室に配し、それら複数枚の被処理物に一括してプラズマ洗浄を行うプラズマ処理装置が知られている。例えば特許文献２のプラズマ処理装置では、対向配置された平板状のＲＦ電極と接地電極との間にホルダーを配している。また、特許文献３のプラズマ処理装置では、対向配置された一対の平板状のＲＦ電極の間にホルダーを配し、それらの外側を囲む処理室を接地電極としている。   The plasma processing apparatus of Patent Document 1 is a so-called single-wafer type, and processes such as loading of a workpiece into a processing chamber, decompression of the processing chamber, plasma cleaning, and carrying out of the processing chamber from one workpiece are performed. It is necessary to carry out each treatment, and the efficiency is poor. Therefore, a plasma processing apparatus is known in which a holder that holds a plurality of objects to be processed is disposed in a processing chamber, and the plurality of objects to be processed are collectively subjected to plasma cleaning. For example, in the plasma processing apparatus of Patent Document 2, a holder is disposed between a flat plate-like RF electrode and a ground electrode that are arranged to face each other. Further, in the plasma processing apparatus of Patent Document 3, a holder is disposed between a pair of flat plate-like RF electrodes arranged opposite to each other, and a processing chamber surrounding the outside thereof is used as a ground electrode.

特開２００１−２７１１８３号公報JP 2001-271183 A 特開２００４−８８３０号公報JP 2004-8830 A 特開２００８−２９９３０号公報JP 2008-29930 A

ところで、特許文献２，３のように電極とホルダーを配した構成では、プラズマ洗浄が不均一になるという問題があった。このため、例えば十分な洗浄が行われなかった部分ではワイヤボンディングの接続強度が不十分となって、製品不良が生じることがあった。ホルダーに収容された被処理物では周辺部分に比べて中央部に対する洗浄力が低いことから、ホルダーの奥にまで十分なプラズマが供給されていないことが原因と推測される。なお、このような問題は、プラズマ洗浄に限らず、プラズマエッチングなどのプラズマ処理にも同様に生じる。   By the way, in the configuration in which the electrode and the holder are arranged as in Patent Documents 2 and 3, there is a problem that the plasma cleaning becomes non-uniform. For this reason, for example, in a portion where sufficient cleaning has not been performed, the connection strength of wire bonding becomes insufficient, and product defects may occur. The object to be processed accommodated in the holder has a lower cleaning power with respect to the central portion than the peripheral portion, and it is assumed that sufficient plasma is not supplied to the back of the holder. Such a problem occurs not only in plasma cleaning but also in plasma processing such as plasma etching.

本発明は、複数の被処理物に対するプラズマによる表面処理を均一に行うことができるプラズマ処理装置を提供することを目的とする。 An object of this invention is to provide the plasma processing apparatus which can perform the surface treatment by the plasma with respect to several to-be-processed object uniformly.

本発明のプラズマ処理装置は、ホルダーと、ガス導入部と、排気口と、電源と、電極ユニットと、流路制御部材とを備え、被処理物を処理室内に収容し、真空にした処理室内に導入したプロセスガスからプラズマを発生させ、プラズマによって被処理物の表面に処理を行う。ホルダーは、一対の側面の間に側面と直交する方向で、複数の被処理物を間隔あけて積層した状態に保持し、且つ積層された被処理物の間の各側面の部分を露出する側面開口を有し、処理室内に載置される。ガス導入部は、ホルダーが処理室内に載置された状態で、ホルダーの一方の側面開口に対向して配される。ガス導入部は、側面開口に向けて配される複数の導入口を有し、導入口からプロセスガスを側面開口に向けて放出する。排気口は、ホルダーが処理室内に載置された状態で、ホルダーを挟んでガス導入部とは反対側の処理室の領域に配され、処理室内からプラズマを含むプロセスガスを排気する。電源は、プラズマを発生させる高周波電圧を出力する。電極ユニットは、電源からの高周波電圧が印加される円柱形状の第１電極及び接地される円柱形状の第２電極を有する。第１電極及び第２電極は、ホルダーと導入口との間で互いに略平行状態で離間し、且つプロセスガスの放出方向と直交する方向に並べられる１列以上の電極列を有する。流路制御部材は、ホルダーの一対の側面及び処理室への載置面を除く周囲で処理室との間に配され、処理室を導入口側の導入口側空間と排気口側の排気口側空間に分けて、ホルダーの周囲を通り導入口から排気口へのプラズマの流れを抑制する。 The plasma processing apparatus of the present invention includes a holder, a gas introduction part, an exhaust port, a power source, an electrode unit, and a flow path control member, and accommodates an object to be processed in a processing chamber and is evacuated. Plasma is generated from the process gas introduced into the substrate, and the surface of the object to be processed is processed by the plasma. The holder is a side surface that holds a plurality of objects to be processed in a direction perpendicular to the side surface between a pair of side surfaces and exposes a portion of each side surface between the stacked objects to be processed. It has an opening and is placed in the processing chamber. The gas introduction part is arranged to face one side opening of the holder in a state where the holder is placed in the processing chamber. The gas inlet has a plurality of inlets arranged toward the side opening, and discharges the process gas from the inlet toward the side opening. The exhaust port is disposed in a region of the processing chamber opposite to the gas introduction unit with the holder placed in the processing chamber, and exhausts process gas including plasma from the processing chamber. The power source outputs a high-frequency voltage that generates plasma. The electrode unit includes a cylindrical first electrode to which a high frequency voltage from a power source is applied and a cylindrical second electrode to be grounded. The first electrode and the second electrode have one or more electrode rows that are separated from each other in a substantially parallel state between the holder and the introduction port and are arranged in a direction orthogonal to the process gas discharge direction. The flow path control member is arranged between the processing chamber around the pair of side surfaces of the holder and the mounting surface on the processing chamber, and the processing chamber is connected to the inlet side space on the inlet side and the exhaust port on the exhaust port side. Dividing into side spaces, the flow of plasma from the inlet to the exhaust through the holder is suppressed.

電極ユニットは、ホルダーを挟む位置で、導入口側空間及び排気口側空間にそれぞれ設けられていることが好ましい。 The electrode units are preferably provided in the inlet side space and the exhaust side space, respectively, at positions where the holder is sandwiched .

処理室は箱状であり、処理室の側面及び上面を構成する蓋部と、処理室の底面部を構成する底面部とを備え、蓋部が底面部から離される開放状態で、被処理物が積層されているホルダーが底面部に載置され、ホルダーの載置後に蓋部及び底面部が閉鎖状態になることが好ましい。 The processing chamber is box-shaped, and includes a lid portion that forms the side surface and top surface of the processing chamber, and a bottom surface portion that forms the bottom surface portion of the processing chamber, and the processing object is in an open state in which the lid portion is separated from the bottom surface portion. Is preferably placed on the bottom surface, and the lid and the bottom surface are preferably closed after the holder is placed .

ホルダーは、側面開口が形成される平行な一対の側板と、側板の上端縁及び下端縁を連結する天板及び底板を有する角筒であり、角筒の両端の開口から被処理物がセットされ、閉鎖状態では開口が流路制御部材により塞がれることが好ましい。 The holder is a rectangular tube having a pair of parallel side plates in which side openings are formed, and a top plate and a bottom plate that connect the upper and lower edges of the side plates, and a workpiece is set from the openings at both ends of the rectangular tube. In the closed state, the opening is preferably closed by the flow path control member .

本発明によれば、電極間で発生したプラズマをホルダー内に十分かつ均一に供給することができ、被処理物の表面に対するプラズマによる処理を十分にかつ均一に行うことができる。   According to the present invention, the plasma generated between the electrodes can be sufficiently and uniformly supplied into the holder, and the surface of the workpiece can be sufficiently and uniformly treated with the plasma.

本発明のプラズマ処理装置の外観を示す斜視図である。It is a perspective view which shows the external appearance of the plasma processing apparatus of this invention. 複数枚の基板を保持するホルダーを示す斜視図である。It is a perspective view which shows the holder holding several board | substrates. 閉鎖状態としたときの処理室の各部の状態を示す斜視図である。It is a perspective view which shows the state of each part of a process chamber when it is set as a closed state. 開放状態としたときの処理室の各部の状態を示す斜視図である。It is a perspective view which shows the state of each part of a process chamber when it is set as an open state. 第１，第２電極の取付けを示す説明図である。It is explanatory drawing which shows attachment of the 1st, 2nd electrode. 開放状態におけるホルダーと第１流路制御板との位置を示す斜視図である。It is a perspective view which shows the position of the holder and 1st flow-path control board in an open state. 閉鎖状態におけるホルダーと第１流路制御板との位置を示す斜視図である。It is a perspective view which shows the position of the holder and 1st flow-path control board in a closed state. 処理ユニットの電気的な接続関係を示す説明図である。It is explanatory drawing which shows the electrical connection relationship of a processing unit. 電極ユニットを２列の電極列から構成した列を示す説明図である。It is explanatory drawing which shows the row | line | column which comprised the electrode unit from two rows of electrode rows. 導入口側の他に排気口側に電極ユニットを設けた列を示す説明図である。It is explanatory drawing which shows the row | line | column which provided the electrode unit on the exhaust port side other than the inlet port side. 第１電極の電極列と第２電極の電極列とから構成した例を示す説明図である。It is explanatory drawing which shows the example comprised from the electrode row | line of a 1st electrode, and the electrode row | line of a 2nd electrode. ２列の電極列の相互で第１電極と第２電極の配置をずらした例を示す説明図である。It is explanatory drawing which shows the example which shifted arrangement | positioning of the 1st electrode and the 2nd electrode between two electrode rows. 電極ユニットを第１電極の電極列と第２電極の電極列とから構成し、電極列の位置をずらした例を示す説明図である。It is explanatory drawing which shows the example which comprised the electrode unit from the electrode row | line of a 1st electrode, and the electrode row | line of a 2nd electrode, and shifted the position of the electrode row | line | column. 各電極を角柱形状にした例を示す斜視図である。It is a perspective view which shows the example which made each electrode the prismatic shape. 各電極を板状にした例を示す斜視図である。It is a perspective view which shows the example which made each electrode plate shape. 電極を中空にして冷却水で冷却する例を示す断面図である。It is sectional drawing which shows the example which makes an electrode hollow and cools with cooling water. 各電極の端部を接続して冷却水を流す例を示す斜視図である。It is a perspective view which shows the example which connects the edge part of each electrode, and flows cooling water. 一対の格子状の電極板を用いた例を示す斜視図である。It is a perspective view which shows the example using a pair of grid | lattice-like electrode plate. 真空槽の一部を引き出して処理室を開放する例を示す断面図である。It is sectional drawing which shows the example which pulls out a part of vacuum chamber and open | releases a process chamber. ガス導入口を中空管で構成した例を示す説明図である。It is explanatory drawing which shows the example which comprised the gas inlet port with the hollow tube. 第２電極を接地しない例を示す説明図である。It is explanatory drawing which shows the example which does not earth | ground a 2nd electrode. 比較のための従来のプラズマ処理装置を示す説明図である。It is explanatory drawing which shows the conventional plasma processing apparatus for a comparison.

図１に示すように、本発明を実施したプラズマ処理装置１０は、複数枚の被処理物に対してプラズマ処理を行う。この例では被処理物として、板状の被処理物である基板１１（図２参照）の上面と下面とを被処理面としてプラズマ洗浄する。基板１１は、その上面に複数の半導体素子を実装したものである。プラズマ洗浄では、半導体素子の電極、その電極とワイヤボンディングで接続される基板の接続部をクリーニングする。また、はんだボール（電極）を形成するための基板１１の下面もクリーニングする。   As shown in FIG. 1, a plasma processing apparatus 10 embodying the present invention performs plasma processing on a plurality of objects to be processed. In this example, plasma cleaning is performed using the upper and lower surfaces of the substrate 11 (see FIG. 2), which is a plate-shaped object, as the object to be processed. The substrate 11 has a plurality of semiconductor elements mounted on the upper surface thereof. In the plasma cleaning, the electrode of the semiconductor element and the connection portion of the substrate connected to the electrode by wire bonding are cleaned. Also, the lower surface of the substrate 11 for forming solder balls (electrodes) is cleaned.

なお、被処理物としては、上記のように半導体素子を実装した基板１１に限らず、リードフレームなどでもよい。また、後述するように間隔をあけて積層した状態でホルダーに保持できるものであれば、基板等に電子部品を実装したものや凹凸があっても板状といえる被処理物や、立体的な形状の被処理物に対してプラズマ処理をすることができる。さらに、この例では、プラズマ処理として基板の接続面、半導体素子の電極に付着した樹脂等を除去するプラズマ洗浄について説明するが、プラズマ処理は、デスミア、デスカム、エッチング、表面改質などでもよい。   In addition, as a to-be-processed object, not only the board | substrate 11 which mounted the semiconductor element as mentioned above but a lead frame etc. may be sufficient. In addition, as long as it can be held in a holder in a state of being laminated with a gap as will be described later, an electronic component mounted on a substrate etc. Plasma treatment can be performed on a workpiece having a shape. Furthermore, in this example, plasma cleaning for removing the resin and the like attached to the connection surface of the substrate and the electrode of the semiconductor element will be described as plasma processing. However, the plasma processing may be desmear, descum, etching, surface modification, or the like.

プラズマ処理装置１０は、プラズマ処理を行う処理ユニット１２と、処理を制御する制御ユニット１３を有する。処理ユニット１２は、内部に処理室１４を形成する真空槽１５、処理室１４内に配された電極や、真空ポンプ１６，ガス供給装置１７、高周波電源１８等などで構成される。真空槽１５は、箱状であり、真空槽１５の側面及び上面となる蓋部１５ａと、底面部１５ｂとからなる。これら蓋部１５ａ，底面部１５ｂは、例えばステンレス製である。蓋部１５ａは、上下方向に移動自在であり、下方に移動することによって底面部１５ｂとともに閉じた空間としての処理室１４を形成する（図４参照）。 The plasma processing apparatus 10 includes a processing unit 12 that performs plasma processing and a control unit 13 that controls processing. The processing unit 12 includes a vacuum chamber 15 that forms a processing chamber 14 therein, electrodes disposed in the processing chamber 14, a vacuum pump 16, a gas supply device 17, a high-frequency power source 18, and the like. The vacuum chamber 15 has a box shape, and includes a lid portion 15a that serves as a side surface and an upper surface of the vacuum chamber 15, and a bottom surface portion 15b. The lid portion 15a and the bottom surface portion 15b are made of, for example, stainless steel. The lid portion 15a is movable in the vertical direction, and forms a processing chamber 14 as a closed space together with the bottom surface portion 15b by moving downward (see FIG. 4).

真空ポンプ１６は、処理室１４の排気を行う。この排気により処理室１４を例えば１〜１００Ｐａの真空度にする。また、真空ポンプ１６は、プラズマ洗浄中においても、処理室１４からの排気を継続して行い、所定の真空度を維持する。ガス供給装置１７は、処理室１４に導入するプロセスガス、例えばアルゴンガスを供給する。プロセスガスは、プラズマ処理の内容や処理対象によって適宜に選択することができ、アルゴンガスの他に窒素ガス、酸素ガス，水素ガス、四フッ化炭素（ＣＦ４）ガス等や、それらの混合ガスを用いてもよい。高周波電源１８は、高周波電圧を出力し、それを後述する電極に印加することでプラズマを発生させる。高周波電圧の周波数は、プラズマ処理の内容や処理対象によって適宜決定されるものであり、通常は例えば３ｋＨｚ〜３００ＭＨｚの範囲が用いられる。The vacuum pump 16 exhausts the processing chamber 14. By this evacuation, the processing chamber 14 is set to a vacuum degree of 1 to 100 Pa, for example. Further, the vacuum pump 16 continuously exhausts from the processing chamber 14 even during plasma cleaning, and maintains a predetermined degree of vacuum. The gas supply device 17 supplies a process gas to be introduced into the processing chamber 14, for example, an argon gas. The process gas can be appropriately selected depending on the content of the plasma treatment and the object to be treated. In addition to the argon gas, nitrogen gas, oxygen gas, hydrogen gas, carbon tetrafluoride (CF 4 ) gas, etc., or a mixed gas thereof May be used. The high-frequency power source 18 outputs a high-frequency voltage and generates plasma by applying it to an electrode described later. The frequency of the high-frequency voltage is appropriately determined depending on the content of the plasma processing and the object to be processed. For example, a frequency range of 3 kHz to 300 MHz is usually used.

制御ユニット１３は、処理ユニット１２を制御する制御回路などで構成される。また、この制御ユニット１３には、蓋部１５ａを上下方向に移動させる昇降機構１９を備えている。この昇降機構１９により蓋部１５ａは、図３に示すように、プラズマ洗浄を行うために処理室１４を形成する閉鎖状態と、図４に示すように、下降位置から上昇して処理室１４を開放した開放状態との間で移動する。蓋部１５ａを開放状態とすることにより、基板１１の処理室１４への搬入・搬出を行うことができる。   The control unit 13 includes a control circuit that controls the processing unit 12. Further, the control unit 13 includes an elevating mechanism 19 that moves the lid portion 15a in the vertical direction. As shown in FIG. 3, the elevating mechanism 19 causes the lid portion 15a to move upward from the lowered position as shown in FIG. Move between open states. By opening the lid portion 15a, the substrate 11 can be carried into and out of the processing chamber.

図２に示すように、プラズマ洗浄すべき基板１１は、ホルダー２１に保持した状態で処理室１４内にセットされる。ホルダー２１は、複数の基板１１を間隔をあけて積層した状態で保持するものである。このホルダー２１は、平行な一対の側板２２、平行な天板２３と底板２４を有する断面が矩形の角筒形状であり、両端部が基板１１を出し入れするための開口２５となっている。なお、各開口２５に開閉自在な蓋を設け、プラズマ洗浄中にその蓋で開口２５を閉じてもよい。このようにすることで、開口２５を通したプラズマの流れや流れの乱れの発生を阻止し、プラズマ洗浄の均一性を向上させることができる。この例では、後述する第１流路制御板が各開口２５を塞ぐ蓋として機能する。   As shown in FIG. 2, the substrate 11 to be plasma-cleaned is set in the processing chamber 14 while being held by a holder 21. The holder 21 holds the plurality of substrates 11 in a state where they are stacked at intervals. The holder 21 has a rectangular tube shape with a rectangular cross section having a pair of parallel side plates 22, a parallel top plate 23 and a bottom plate 24, and both ends are openings 25 for taking in and out the substrate 11. Note that each opening 25 may be provided with a lid that can be opened and closed, and the opening 25 may be closed with the lid during plasma cleaning. By doing in this way, generation | occurrence | production of the flow of the plasma through the opening 25 and the disturbance of a flow can be prevented, and the uniformity of plasma cleaning can be improved. In this example, a first flow path control plate, which will be described later, functions as a lid that closes each opening 25.

各側板２２の内面には、それぞれ複数本の保持溝２６が適当な間隔で水平に設けられている。一方の側板２２に設けられる各保持溝２６のそれぞれに対向して、他方の側板２２の保持溝２６が設けられている。各側板２２の相対する保持溝２６に基板１１の両側縁を差し込むことにより、基板１１は、上面を上に向けた姿勢でホルダー２１内に水平に保持される。各保持溝２６にそれぞれ基板１１を差し込むことにより、ホルダー２１内に複数枚の基板１１が上下方向に所定の間隔をあけて積層された状態に保持される。なお、下面を上に向けた姿勢で保持してもよい。   A plurality of holding grooves 26 are horizontally provided on the inner surface of each side plate 22 at appropriate intervals. A holding groove 26 of the other side plate 22 is provided opposite to each holding groove 26 provided on one side plate 22. By inserting both side edges of the substrate 11 into the holding grooves 26 facing each side plate 22, the substrate 11 is horizontally held in the holder 21 with the upper surface facing upward. By inserting the substrate 11 into each holding groove 26, a plurality of substrates 11 are held in the holder 21 in a state where they are stacked at predetermined intervals in the vertical direction. In addition, you may hold | maintain with the attitude | position which turned the lower surface upward.

各側板２２には、水平方向に伸びた側面開口２７が各保持溝２６の上側及び下側にそれぞれ配されるように複数設けられ、積層された基板１１の間の部分が開口となっている。側面開口２７を通して、ホルダー２１内の積層された基板１１の間にプラズマを導入する。側面開口２７から導入されるプラズマを均一かつ十分とするために、側面開口２７から基板１１の任意の部分までの距離を短くするのがよい。すなわち、対向する一対の側面開口２７の間隔を短くすることが好ましい。このため、ホルダー２１は、基板１１の長辺の縁部を保持溝２６で保持するようにしてある。   Each side plate 22 is provided with a plurality of side openings 27 extending in the horizontal direction so as to be respectively arranged on the upper side and the lower side of each holding groove 26, and the portion between the stacked substrates 11 is an opening. . Plasma is introduced between the stacked substrates 11 in the holder 21 through the side opening 27. In order to make the plasma introduced from the side opening 27 uniform and sufficient, it is preferable to shorten the distance from the side opening 27 to any part of the substrate 11. That is, it is preferable to shorten the distance between the pair of side opening 27 facing each other. For this reason, the holder 21 is configured to hold the edge of the long side of the substrate 11 with the holding groove 26.

基板のスルーホールやビアホールの壁面に付着する樹脂残渣を除去するデスミアの場合、基板に設けたスルーホールやビアホールの側面及び底面などの壁面が処理面となる。この場合には、スルーホール等の開口が形成された基板の上面または下面がプラズマを一次的に供給すべき面となり、その一次的に供給すべき面の開口からスルーホール等の内部にプラズマを供給すればよい。   In the case of desmear that removes resin residues adhering to the wall of the through hole or via hole of the substrate, the wall surface such as the side and bottom surfaces of the through hole and via hole provided in the substrate becomes the processing surface. In this case, the upper surface or the lower surface of the substrate in which an opening such as a through hole is formed becomes a surface to which plasma is primarily supplied, and plasma is supplied from the opening in the surface to be primarily supplied into the through hole and the like. What is necessary is just to supply.

なお、上記ホルダー２１の構成は一例であり、例えばパイプなどを用いたフレーム構造のホルダー２１を利用してもよい。この場合、ホルダー２１の側面に側板を設けず開口のままとして、それをホルダー内にプラズマを導入する側面開口とすることができる。また、図２では、７枚の基板１１を保持するホルダー２１を描いてあるが、実際には２０枚程度を保持する。ホルダー２１に保持される基板１１の枚数は適宜に設定でき、１枚でも任意の複数枚でもよい。さらに、この例では上下方向に基板１１を積層しているが、例えば左右方向に基板１１を積層してもよい。   Note that the configuration of the holder 21 is an example, and for example, a holder 21 having a frame structure using a pipe or the like may be used. In this case, it is possible to leave the side plate on the side surface of the holder 21 and leave it as an opening, which can be used as a side opening for introducing plasma into the holder. In FIG. 2, the holder 21 for holding the seven substrates 11 is illustrated, but in reality, about 20 substrates are held. The number of substrates 11 held by the holder 21 can be set as appropriate, and may be one or any plurality. Further, in this example, the substrate 11 is stacked in the vertical direction, but the substrate 11 may be stacked in the horizontal direction, for example.

図３，４に示すように、処理室１４内には、載置台２９、ガス導入部３０、電極ユニット３１、第１，第２流路制御板３２，３３などが配される。これらのうちガス導入部３０、電極ユニット３１、第１，第２流路制御板３２，３３は、蓋部１５ａに取付けられており、蓋部１５ａと一体に上下方向に移動する。   As shown in FIGS. 3 and 4, in the processing chamber 14, a mounting table 29, a gas introduction unit 30, an electrode unit 31, first and second flow path control plates 32 and 33 are arranged. Among these, the gas introduction part 30, the electrode unit 31, and the first and second flow path control plates 32 and 33 are attached to the cover part 15a, and move in the vertical direction integrally with the cover part 15a.

載置台２９は、底面部１５ｂの略中央に配され、絶縁性の脚部３６を挟んで底面部１５ｂに固定されており、真空槽１５とは電気的に絶縁されている。脚部３６に用いられる絶縁性の材料としては、例えばテフロン（登録商標）が用いられている。なお、後述する他の絶縁性の部材についても同様である。   The mounting table 29 is disposed substantially at the center of the bottom surface portion 15 b, is fixed to the bottom surface portion 15 b with the insulating leg portions 36 interposed therebetween, and is electrically insulated from the vacuum chamber 15. As an insulating material used for the leg portion 36, for example, Teflon (registered trademark) is used. The same applies to other insulating members described later.

載置台２９には、上述のホルダー２１がセットされる。ホルダー２１は、ガス導入部３０に一方の側板２２を向けた姿勢で載置台２９上に置かれる。この例では、ホルダー２１を処理室１４内に固定していない。このため未処理の複数枚の基板１１をホルダー２１に保持したまま載置台２９上にセットし、プラズマ洗浄後では処理済みの複数枚の基板１１をホルダー２１に保持したまま一括して載置台２９から移動させて処理室１４の外に取り出すことができる。このホルダー２１のセット、取り出しはロボットアーム（図示省略）によって行われるが、手動で行ってもよい。   The above-described holder 21 is set on the mounting table 29. The holder 21 is placed on the mounting table 29 in a posture in which one side plate 22 faces the gas introduction part 30. In this example, the holder 21 is not fixed in the processing chamber 14. Therefore, a plurality of unprocessed substrates 11 are set on the mounting table 29 while being held by the holder 21, and after the plasma cleaning, the plurality of processed substrates 11 are collectively held by the holder 21. And can be taken out of the processing chamber 14. The holder 21 is set and removed by a robot arm (not shown), but may be manually set.

なお、ホルダー２１を処理室１４内に固定した構成とすることもできる。この場合には、プラズマ洗浄毎に、処理室１４に配置されたホルダー２１から処理済みの基板１１を１枚ずつ取り出し、また未処理の基板１１を１枚ずつそのホルダー２１に差し入れる。   Note that the holder 21 may be fixed in the processing chamber 14. In this case, for each plasma cleaning, the processed substrates 11 are taken out one by one from the holder 21 disposed in the processing chamber 14, and the untreated substrates 11 are inserted into the holder 21 one by one.

ガス導入部３０は、箱形状であり、載置台２９上にホルダー２１の側板２２が対面する蓋部１５ａの１つの側面に取付けられている。このガス導入部３０は、その中空部にガス供給パイプ３７を介してガス供給装置１７からのプロセスガスが供給される。また、処理室１４の中央を向いたガス導入部３０の面、すなわちホルダ−２１の側板２２に対向する面３０ａには、微小な例えば直径が１ｍｍ程度の複数の導入口３８が形成されている。なお、ガス導入部３０は、絶縁板３０ｂを挟んで蓋部１５ａに取付けられており、真空槽１５とは電気的に絶縁されている。   The gas introduction part 30 has a box shape, and is attached to one side surface of the lid part 15 a on which the side plate 22 of the holder 21 faces on the mounting table 29. The gas introduction unit 30 is supplied with the process gas from the gas supply device 17 through the gas supply pipe 37 in the hollow portion. A plurality of small inlets 38 having a diameter of about 1 mm, for example, are formed on the surface of the gas introduction portion 30 facing the center of the processing chamber 14, that is, the surface 30a facing the side plate 22 of the holder-21. . In addition, the gas introduction part 30 is attached to the cover part 15a across the insulating plate 30b, and is electrically insulated from the vacuum chamber 15.

各導入口３８は、それぞれ中空部に供給されたプロセスガスをホルダー２１の側面（側板２２）に向けて水平に放出する。これにより、基板１１の積層方向と直交する向きであり、また基板１１と平行な放出方向でプロセスガスを処理室１４内に導入する。複数の導入口３８は、面３０ａ上における側板２２に対応する領域に均一に分布している。これにより、ホルダー２１の側面の全面にプロセスガスが向かうようにシャワー状にプロセスガスを放出して、ホルダー２１の側面開口２７からその内部にプラズマを均一に供給する。なお、導入口３８が分布する領域は、側板２２に対向する範囲よりも広くても狭くてもよいが、同等の範囲であることが好ましい。   Each inlet 38 discharges the process gas supplied to the hollow part horizontally toward the side surface (side plate 22) of the holder 21. As a result, the process gas is introduced into the processing chamber 14 in a direction perpendicular to the stacking direction of the substrates 11 and in a discharge direction parallel to the substrates 11. The plurality of introduction ports 38 are uniformly distributed in a region corresponding to the side plate 22 on the surface 30a. Thereby, the process gas is discharged in a shower shape so that the process gas is directed to the entire side surface of the holder 21, and plasma is uniformly supplied from the side opening 27 of the holder 21 to the inside thereof. The region where the introduction ports 38 are distributed may be wider or narrower than the range facing the side plate 22, but is preferably in an equivalent range.

電極ユニット３１は、プロセスガスを励起してプラズマを発生させる。この電極ユニット３１は、１列の電極列３１ａを構成する各々複数本の第１及び第２電極４１，４２と、一対の電極保持板４３ａ，４３ｂを備えている。各電極４１，４２は、導電性を有する金属製、例えばアルミ製であって、断面が円柱の棒状（円柱形状）に形成されている。また、電極保持板４３ａ，４３ｂは、例えばアルミ製である。   The electrode unit 31 excites a process gas to generate plasma. The electrode unit 31 includes a plurality of first and second electrodes 41 and 42 and a pair of electrode holding plates 43a and 43b, respectively, constituting one electrode row 31a. Each of the electrodes 41 and 42 is made of a metal having conductivity, for example, aluminum, and is formed in a bar shape (cylindrical shape) having a cylindrical cross section. The electrode holding plates 43a and 43b are made of, for example, aluminum.

第１及び第２電極４１，４２は、いずれも絶縁部材４４（図５参照）を介して上端が電極保持板４３ａに下端が電極保持板４３ｂに取付けられ、互いに略平行、かつ所定の間隔で離間させた格子状（連子）に配列されて電極列３１ａを形成している。この電極列３１ａでは、第１電極４１と第２電極４２とが交互に並べられている。   The first and second electrodes 41 and 42 are both attached to the electrode holding plate 43a and the lower end to the electrode holding plate 43b via an insulating member 44 (see FIG. 5), and are substantially parallel to each other at a predetermined interval. The electrode rows 31a are formed by being arranged in a spaced grid pattern (stripes). In the electrode row 31a, the first electrodes 41 and the second electrodes 42 are alternately arranged.

上記のように構成される電極列３１ａは、ホルダー２１と導入口３８との間で、プロセスガスの放出方向と直交する面内に第１及び第２電極４１，４２が配される。すなわち、各電極４１，４２がプロセスガスの放出方向と直交する方向に並べた状態に配置される。この例では各電極４１，４２を上下方向に長尺に、すなわち各電極４１，４２の軸方向を上下方向としているが、各電極４１，４２の軸方向が水平方向となるようにしてもよい。   In the electrode array 31 a configured as described above, the first and second electrodes 41 and 42 are arranged between the holder 21 and the introduction port 38 in a plane orthogonal to the process gas discharge direction. That is, the electrodes 41 and 42 are arranged in a state in which they are arranged in a direction orthogonal to the process gas discharge direction. In this example, the electrodes 41 and 42 are long in the vertical direction, that is, the axial direction of the electrodes 41 and 42 is the vertical direction, but the axial direction of the electrodes 41 and 42 may be horizontal. .

上記のように電極列３１ａを配置することによって、ホルダー２１の側板２２に対面させて配置した第１及び第２電極４１，４２の間に導入口３８から導入されるプロセスガスを供給し、効率的にプラズマを発生させ、また発生したプラズマを効率的にホルダー２１に供給する。また、放出方向と直交する面内に第１及び第２電極４１，４２を配することにより、プラズマ発生領域とホルダー２１の側面との距離を均等にして、ホルダー２１内でのプラズマ密度を均一にしている。   By arranging the electrode array 31a as described above, the process gas introduced from the introduction port 38 is supplied between the first and second electrodes 41 and 42 arranged to face the side plate 22 of the holder 21, and the efficiency is increased. Plasma is generated, and the generated plasma is efficiently supplied to the holder 21. Further, by arranging the first and second electrodes 41 and 42 in a plane orthogonal to the emission direction, the distance between the plasma generation region and the side surface of the holder 21 is made uniform, and the plasma density in the holder 21 is made uniform. I have to.

さらに、ホルダー２１の側面開口２７からその内部にプラズマを均一に導入するために、ホルダー２１の側面が各電極４１，４２の配列している範囲に対面している。より厳密には、各電極４１，４２の配列範囲内でプラズマが発生する領域にホルダー２１が側面を対向されている。   Further, in order to uniformly introduce plasma into the inside from the side opening 27 of the holder 21, the side of the holder 21 faces the range where the electrodes 41 and 42 are arranged. More precisely, the holder 21 faces the region where plasma is generated within the arrangement range of the electrodes 41 and 42.

図５に示すように、電極ユニット３１は、絶縁材料で作成されたスペーサ４５を介して電極保持板４３ａを蓋部１５ａの天井面にネジ止めすることによって処理室１４内に取り付けられている。また、各電極４１，４２は、上述のように絶縁部材４４を介して電極保持板４３ａ，４３ｂに取り付けられている。絶縁部材４４は、略円柱形状であり、上部にフランジ４４ａが、中心に孔４４ｂがそれぞれ形成されている。絶縁部材４４は、電極保持板４３ａの開口に通されてフランジ４４ａを電極保持板４３ａの上面に係合した状態に組み付けられる。電極４１，４２は、その上端部が孔４４ｂに通したネジ４６に螺合されることで、絶縁部材４４の下端面に上端面を密着させた状態とされて電極保持板４３ａに固定される。各電極４１，４２の下端についても、同様に絶縁部材４４を介して電極保持板４３ｂに固定される。   As shown in FIG. 5, the electrode unit 31 is mounted in the processing chamber 14 by screwing the electrode holding plate 43a to the ceiling surface of the lid portion 15a through a spacer 45 made of an insulating material. The electrodes 41 and 42 are attached to the electrode holding plates 43a and 43b via the insulating member 44 as described above. The insulating member 44 has a substantially cylindrical shape, and has a flange 44a at the top and a hole 44b at the center. The insulating member 44 is assembled in a state where the flange 44a is engaged with the upper surface of the electrode holding plate 43a through the opening of the electrode holding plate 43a. The upper ends of the electrodes 41 and 42 are screwed into screws 46 passed through the holes 44b, so that the upper end surface is brought into close contact with the lower end surface of the insulating member 44 and fixed to the electrode holding plate 43a. . Similarly, the lower ends of the electrodes 41 and 42 are also fixed to the electrode holding plate 43b via the insulating member 44.

ネジを緩めることにより蓋部１５ａから電極ユニット３１を取り外し、また各電極４１，４２を電極保持板４３ａ，４３ｂから取り外して、各電極４１，４２のクリーニングや交換を行うことができる。ネジ４６は、導電性を有するものが用いられており、上側のネジ４６のうちの第１電極４１と螺合するものは、蓋部１５ａの内部の配線で高周波電源１８に接続され、第２電極４２に螺合するものは接地される。これにより、第１電極４１に高周波電圧が印加され、第２電極４２が接地される。   By loosening the screws, the electrode unit 31 can be removed from the lid portion 15a, and the electrodes 41 and 42 can be removed from the electrode holding plates 43a and 43b, whereby the electrodes 41 and 42 can be cleaned and replaced. The screw 46 has conductivity, and the screw 46 that is screwed to the first electrode 41 of the upper screw 46 is connected to the high-frequency power source 18 through the wiring inside the lid portion 15a, and the second What is screwed to the electrode 42 is grounded. As a result, a high frequency voltage is applied to the first electrode 41, and the second electrode 42 is grounded.

図３，４に示されるように、ホルダー２１を挟んでガス導入部３０と反対側の蓋部１５ａの側面に、すなわちガス導入部３０に対向する位置に排気口４７が設けられている。排気口４７には、真空ポンプ１６が接続されており、この排気口４７から処理室１４内からプラズマを含むプロセスガスの排気を行う。排気口４７に対向し、かつ排気口４７からホルダー側に適当な距離で離れた位置に第２流路制御板３３が配されている。第２流路制御板３３は、ホルダー２１側から見たときに排気口４７を覆い隠すように、排気口４７の口径よりも大きな板状に形成されている。第２流路制御板３３は、ホルダー２１から排気口４７に向かうプラズマの流路を遮るようにプラズマの排気流路を制御する。これにより、処理室１４内において均一なプラズマの流れ形成する。   As shown in FIGS. 3 and 4, an exhaust port 47 is provided on the side surface of the lid portion 15 a opposite to the gas introduction unit 30 with the holder 21 interposed therebetween, that is, at a position facing the gas introduction unit 30. A vacuum pump 16 is connected to the exhaust port 47, and process gas containing plasma is exhausted from the inside of the processing chamber 14 through the exhaust port 47. The second flow path control plate 33 is disposed at a position facing the exhaust port 47 and spaced from the exhaust port 47 to the holder side by an appropriate distance. The second flow path control plate 33 is formed in a plate shape larger than the diameter of the exhaust port 47 so as to cover the exhaust port 47 when viewed from the holder 21 side. The second flow path control plate 33 controls the plasma exhaust flow path so as to block the plasma flow path from the holder 21 toward the exhaust port 47. Thereby, a uniform plasma flow is formed in the processing chamber 14.

なお、排気口４７の位置は、この他にも真空槽１５の底面部１５ｂや天井面など適宜に決めることができるが、排気口４７は、ホルダー２１を挟んで導入口３８とは反対側の処理室１４の領域に配するのがよい。したがって、処理室１４内においてホルダー２１を挟んで導入口３８側とは反対の領域側を囲む真空槽１５の底面部１５ｂ，天井面や各側面等に排気口４７を設けるのがよい。また、第２流路制御板３３の有無は、真空下でのプラズマの流れに対する影響は、あまり大きくない。このため、例えば第２流路制御板３３を省略してもよい。   In addition to this, the position of the exhaust port 47 can be determined as appropriate, such as the bottom surface portion 15b of the vacuum chamber 15 or the ceiling surface, but the exhaust port 47 is on the opposite side of the introduction port 38 with the holder 21 in between. It is preferable to arrange in the region of the processing chamber 14. Therefore, the exhaust port 47 is preferably provided in the bottom surface portion 15b, the ceiling surface, each side surface, and the like of the vacuum chamber 15 surrounding the region opposite to the introduction port 38 side with the holder 21 in the processing chamber 14. The presence or absence of the second flow path control plate 33 does not have a great influence on the plasma flow under vacuum. For this reason, for example, the second flow path control plate 33 may be omitted.

図６に示すように、第１流路制御板３２は、ホルダー２１とほぼ同じ大きさに切り欠かれた収容部３２ａを有し、ガス導入部３０側から見て略コ字状に形成されている。この第１流路制御板３２は、図６に示されるように、蓋部１５ａが開放状態のときには、載置台２９の上方に移動して、載置台２９上からホルダ−２１の移動、及び載置台２９上へのホルダー２１のセットを許容する。   As shown in FIG. 6, the first flow path control plate 32 has an accommodating portion 32 a that is cut out to approximately the same size as the holder 21, and is formed in a substantially U shape when viewed from the gas introduction portion 30 side. ing. As shown in FIG. 6, the first flow path control plate 32 moves above the mounting table 29 and moves the holder 21 from the mounting table 29 and mounts it when the lid portion 15 a is in the open state. The holder 21 is allowed to be set on the mounting table 29.

図７に示すように、第１流路制御板３２は、蓋部１５ａが閉鎖状態のときには、収容部３２ａ内にホルダー２１を収容してこのホルダー２１の周囲に配される。これにより、ホルダー２１と真空槽１５の内面との間を塞ぎ、ホルダー２１の周囲を通って、処理室１４の導入口３８側の領域から排気口４７側の領域にプラズマが流れることを抑制し、ホルダー２１内部にプラズマを効率的に供給する。脚部３６は、第１流路制御板３２と同様に流路を制御する機能を有し、載置台２９と底面部１５ａとの間を塞ぎ、これらの間にプラズマが流れないようにする。なお、第１流路制御板３２，第２流路制御板３３は、脚部３６と同様に絶縁性の材料で作製されている。   As shown in FIG. 7, when the lid portion 15a is in the closed state, the first flow path control plate 32 accommodates the holder 21 in the accommodating portion 32a and is arranged around the holder 21. Thereby, the space between the holder 21 and the inner surface of the vacuum chamber 15 is blocked, and the flow of plasma from the region on the inlet 38 side to the region on the exhaust port 47 side of the processing chamber 14 through the periphery of the holder 21 is suppressed. The plasma is efficiently supplied into the holder 21. The leg portion 36 has a function of controlling the flow path in the same manner as the first flow path control plate 32, blocks the space between the mounting table 29 and the bottom surface portion 15a, and prevents plasma from flowing therebetween. In addition, the 1st flow path control board 32 and the 2nd flow path control board 33 are produced with the insulating material similarly to the leg part 36. FIG.

図８に示すように、蓋部１５ａ及び底面部１５ｂは接地されている。前述のように、第１電極４１は、高周波電源１８が接続されて高周波電圧が印加される。第２電極４２は、接地されている。ホルダー２１，載置台２９は、例えば金属製であるが、上述のように脚部３６及び第１流路制御板３２を絶縁性とすることによって、電気的には高周波電源１８に接続されておらず、また接地もされない。また、ガス導入部３０についても、前述のように真空槽１５とは絶縁されており、高周波電源１８に接続されておらず、また接地もされない。   As shown in FIG. 8, the lid portion 15a and the bottom surface portion 15b are grounded. As described above, the first electrode 41 is connected to the high frequency power supply 18 and applied with a high frequency voltage. The second electrode 42 is grounded. The holder 21 and the mounting table 29 are made of, for example, metal, but are electrically connected to the high-frequency power source 18 by making the legs 36 and the first flow path control plate 32 insulative as described above. Neither is it grounded. Further, the gas introduction part 30 is also insulated from the vacuum chamber 15 as described above, and is not connected to the high frequency power source 18 and is not grounded.

次に上記構成の作用について説明する。まず、処理室１４内が大気圧になっていることを確認してから昇降機構１９を作動し、蓋部１５ａを上昇させて開放状態にする。次に図示しないロボットアームにより、複数の基板１１を保持したホルダー２１を載置台２９の上に所定の向きでセットする。   Next, the operation of the above configuration will be described. First, after confirming that the inside of the processing chamber 14 is at atmospheric pressure, the elevating mechanism 19 is operated to raise the lid 15a to an open state. Next, the holder 21 holding the plurality of substrates 11 is set on the mounting table 29 in a predetermined direction by a robot arm (not shown).

ロボットアームの退避後に、昇降機構１９により蓋部１５ａを下降し、閉鎖状態にする。続いて真空ポンプ１６が作動されて、処理室１４内が所定の真空度となるまで排気される。所定の真空度に達すると、ガス供給装置１７からのプロセスガスの供給が開始されるとともに、高周波電源１８により第１電極４１に高周波電圧が印加される。プロセスガスは、各導入口３８のそれぞれから処理室１４内に導入される。そして、このプロセスガスが、第１電極４１に対する高周波電圧の印加により第１電極４１と第２電極４２と間に生じる電界で励起されてプラズマが発生する。   After retracting the robot arm, the lid 15a is lowered by the elevating mechanism 19 to be in a closed state. Subsequently, the vacuum pump 16 is operated, and the processing chamber 14 is exhausted until a predetermined degree of vacuum is reached. When a predetermined degree of vacuum is reached, supply of process gas from the gas supply device 17 is started, and a high-frequency voltage is applied to the first electrode 41 by the high-frequency power source 18. The process gas is introduced into the processing chamber 14 from each of the introduction ports 38. The process gas is excited by an electric field generated between the first electrode 41 and the second electrode 42 by applying a high-frequency voltage to the first electrode 41 to generate plasma.

発生したプラズマがホルダー２１の内部に供給されると、そのプラズマ中のラジカルやイオンにより、半導体素子の電極の表面を含む基板１１の上面及び下面に付着している汚染物質が除去される。このときに、プロセスガスは、各導入口３８からホルダー２１に向けて放出され、処理室１４内はホルダー２１を挟んで各導入口３８と反対側の排気口４７で排気されている。このため、マクロ的に見ればプロセスガスから生成されるプラズマがホルダー２１に向けて流れる。また、第１流路制御板３２，脚部３６により、プラズマのほとんどがホルダ−２１内を通る。   When the generated plasma is supplied into the holder 21, contaminants attached to the upper and lower surfaces of the substrate 11 including the surface of the electrode of the semiconductor element are removed by radicals and ions in the plasma. At this time, the process gas is discharged from each introduction port 38 toward the holder 21, and the inside of the processing chamber 14 is exhausted through the exhaust port 47 opposite to each introduction port 38 with the holder 21 interposed therebetween. For this reason, when viewed macroscopically, plasma generated from the process gas flows toward the holder 21. Further, most of the plasma passes through the holder 21 by the first flow path control plate 32 and the leg portion 36.

さらに、側板２２に対応する領域に均一に分布させた複数の導入口３８からプロセスガスをシャワー状に放出するとともに、プラズマの発生領域にホルダー２１の側面が全面的に対面するようにしているため、ホルダー２１の側面開口２７からホルダー２１の内部にプラズマが均一に供給される。しかも、第２流路制御板３３の作用で排気口４７からの排気によるプラズマのホルダー２１内への導入ムラも抑制されている。したがって、各基板１１の上面及び下面は、十分なプラズマが均一に供給されて、均一かつ十分に洗浄される。   Further, the process gas is discharged in a shower form from a plurality of inlets 38 uniformly distributed in the region corresponding to the side plate 22, and the side surface of the holder 21 is entirely opposed to the plasma generation region. The plasma is uniformly supplied from the side opening 27 of the holder 21 into the holder 21. In addition, the introduction of plasma into the holder 21 due to the exhaust from the exhaust port 47 is also suppressed by the action of the second flow path control plate 33. Therefore, the upper surface and the lower surface of each substrate 11 are uniformly and sufficiently cleaned by sufficiently supplying sufficient plasma.

上記のようにして各基板１１に対してプラズマ洗浄を行った後、プロセスガスの供給、排気、及び高周波電圧の印加を停止する。この後、処理室１４内を大気圧に戻してから昇降機構１９を作動させ、蓋部１５ａを開放状態にしてから、載置台２９上からホルダー２１を取り出す。 After plasma cleaning is performed on each substrate 11 as described above, supply of process gas, exhaust, and application of high-frequency voltage are stopped. Thereafter, after the inside of the processing chamber 14 is returned to atmospheric pressure, the elevating mechanism 19 is operated to open the lid portion 15a, and then the holder 21 is taken out from the mounting table 29.

上記実施形態では、第１電極と第２電極とを交互に配列した１列の電極列であるが、第１電極と第２電極の配列、電極列の配置などは種々のものを採用することができる。図９は、電極ユニット５１を２列の電極列５１ａから構成したものである。各電極列５１ａは、最初の実施形態と同様に、プロセスガスの放出方向と直交する面内に第１電極４１と第２電極４２とを交互に並べて格子状（連子）に配列したものであり、２列の電極列５１ａは、プロセスガスの放出方向に所定の間隔をあけて配してある。   In the above-described embodiment, the first electrode and the second electrode are arranged in an alternating manner. However, various arrangements of the first electrode and the second electrode, the arrangement of the electrode rows, and the like are adopted. Can do. In FIG. 9, the electrode unit 51 is composed of two rows of electrode rows 51a. As in the first embodiment, each electrode row 51a is formed by alternately arranging the first electrodes 41 and the second electrodes 42 in a plane perpendicular to the process gas emission direction. The two electrode rows 51a are arranged at a predetermined interval in the process gas discharge direction.

なお、図９に示す例では、電極列５１ａは２列であるが３列以上であってもよい。また、図１０に示すように、ホルダー２１を挟んで導入口３８側と排気口４７側との処理室１４の各領域に電極ユニット５１をそれぞれ設けてもよい。図１０に示す例では、導入口３８側と排気口４７側のいずれの電極ユニット５１も２列ずつ電極列５１ａを設けているが、導入口３８側と排気口４７側に電極列を１列ずつ設けてもよく、それぞれ３列以上設けてもよい。さらには、導入口３８側と排気口４７側の列数や電極数が異なってもよい。   In the example shown in FIG. 9, the electrode rows 51a are two rows, but may be three or more rows. Further, as shown in FIG. 10, electrode units 51 may be provided in each region of the processing chamber 14 on the introduction port 38 side and the exhaust port 47 side across the holder 21. In the example shown in FIG. 10, each electrode unit 51 on the introduction port 38 side and the exhaust port 47 side is provided with two electrode rows 51a, but one electrode row is provided on the introduction port 38 side and the exhaust port 47 side. Each may be provided, or three or more rows may be provided. Furthermore, the number of rows and the number of electrodes on the introduction port 38 side and the exhaust port 47 side may be different.

図１１は、電極列を同じ種類の複数本の電極で構成し、電極の種類の異なる電極列を互いに離間させて配した例を示すものである。図１１に示す例では、電極ユニット５２は、プロセスガスの放出方向と直交する面内に複数の第１電極４１を並べて格子状に配列した電極列５２ａと複数の第２電極４２を並べて格子状に配列した電極列５２ｂとからなる。電極列５２ａと電極列５２ｂは、プロセスガスの放出方向に所定の間隔で離間させてある。この例では、第１電極４１と第２電極４２とは、互いにプロセスガスの放出方向に離間して配されるが同様な効果が得られる。   FIG. 11 shows an example in which an electrode array is composed of a plurality of electrodes of the same type, and electrode arrays of different electrode types are arranged apart from each other. In the example shown in FIG. 11, the electrode unit 52 has a grid shape in which a plurality of first electrodes 41 are arranged in a grid shape in a plane orthogonal to the process gas discharge direction and a plurality of second electrodes 42 are arranged in a grid pattern. The electrode array 52b is arranged in a row. The electrode row 52a and the electrode row 52b are separated from each other at a predetermined interval in the process gas discharge direction. In this example, the first electrode 41 and the second electrode 42 are arranged apart from each other in the process gas discharge direction, but the same effect can be obtained.

図１１の例では、処理室１４のホルダー２１を挟んで導入口３８側と排気口４７側との各領域にそれぞれ電極ユニット５２を設けている。導入口３８側及び排気口４７側の各電極ユニット５２では、いずれも電極列５２ａが電極列５２ｂよりもホルダー２１に近い位置に配されており、ホルダー２１を挟んで対称的な電極配置となっている。なお、図１１の例とは逆に電極列５２ｂが電極列５２ａよりもホルダー２１に近い位置に配されるようにしてもよい。また、このような電極列５２ａ，５２ｂからなる電極ユニット５２を
導入口３８側だけに設けてもよい。In the example of FIG. 11, electrode units 52 are provided in the respective regions on the introduction port 38 side and the exhaust port 47 side across the holder 21 of the processing chamber 14. In each of the electrode units 52 on the introduction port 38 side and the exhaust port 47 side, the electrode row 52a is disposed closer to the holder 21 than the electrode row 52b, and the electrode arrangement is symmetrical with respect to the holder 21. ing. In contrast to the example of FIG. 11, the electrode row 52b may be arranged at a position closer to the holder 21 than the electrode row 52a. Further, the electrode unit 52 including such electrode rows 52a and 52b may be provided only on the introduction port 38 side.

なお、図１０や図１１に示される例のように、導入口３８側と排気口４７側とに電極列をそれぞれ設ける場合には、導入口３８側の電極と排気口４７側の電極との間がプラズマ発生領域とならないように、電極の配列や位置、電極列の位置等を決めるべきである。このような観点から、ホルダー２１を挟んで対称的な電極配置とすることは好ましい態様である。   10 and 11, when the electrode rows are provided on the introduction port 38 side and the exhaust port 47 side, respectively, the electrode on the introduction port 38 side and the electrode on the exhaust port 47 side The arrangement and position of the electrodes, the position of the electrode rows, etc. should be determined so that the gap does not become the plasma generation region. From such a point of view, it is a preferable embodiment to have a symmetrical electrode arrangement with the holder 21 in between.

図１２は、隣接した電極列間で電極の配列をずらした電極ユニットの列を示すものである。この例では、電極ユニット５３として、プロセスガスの放出方向と直交する面内に第１電極４１と第２電極４２とを交互に並べて格子状に配列した２列の電極列５３ａ，５３ｂを設けるとともに、各電極列５３ａ，５３ｂの第１，第２電極４１，４２の配列を１本分ずらしている。これにより、同一の電極列中で第１，第２電極４１，４２が互いに離間して配されてとともに、隣接した電極列間の第１，第２電極４１，４２がプロセスガスの放出方向に互いに離間して配されている。なお、隣接した電極列間で電極の配列をずらした電極列を３列以上設けてもよい。   FIG. 12 shows a row of electrode units in which the arrangement of electrodes is shifted between adjacent electrode rows. In this example, the electrode unit 53 is provided with two electrode rows 53a and 53b in which first electrodes 41 and second electrodes 42 are alternately arranged in a lattice pattern in a plane orthogonal to the process gas discharge direction. The arrangement of the first and second electrodes 41 and 42 of the electrode rows 53a and 53b is shifted by one. As a result, the first and second electrodes 41 and 42 are spaced apart from each other in the same electrode row, and the first and second electrodes 41 and 42 between the adjacent electrode rows are arranged in the process gas discharge direction. They are spaced apart from each other. Note that three or more electrode rows in which the electrode arrangement is shifted between adjacent electrode rows may be provided.

図１３は、電極の種類が異なる隣接した電極列間で電極位置を配列方向にずらした電極ユニットの例を示している。この例の電極ユニット５６では、プロセスガスの放出方向と直交する面内に複数の第１電極４１を並べて格子状に配列した電極列５６ａと複数の第２電極４２を並べて格子状に配列した電極列５６ｂとをプロセスガスの放出方向に所定間隔で並べるとともに、電極列５６ａ，５６ｂの電極の位置を電極の配列方向にずらして配してある。電極列５６ａ，５６ｂは、同じピッチで電極が配列されているが、そのピッチの半分だけ電極の位置がずらされている。   FIG. 13 shows an example of an electrode unit in which the electrode positions are shifted in the arrangement direction between adjacent electrode rows of different electrode types. In the electrode unit 56 of this example, an electrode array 56a in which a plurality of first electrodes 41 are arranged in a lattice pattern and a plurality of second electrodes 42 are arranged in a lattice pattern in a plane orthogonal to the process gas discharge direction. The rows 56b are arranged at predetermined intervals in the process gas discharge direction, and the positions of the electrodes of the electrode rows 56a and 56b are shifted in the electrode arrangement direction. In the electrode rows 56a and 56b, electrodes are arranged at the same pitch, but the positions of the electrodes are shifted by half the pitch.

なお、図１３の例では、第１電極４１の電極列５６ａを第２電極４２の電極列５６ｂよりもホルダー２１に近い位置に配置しているが、これとは逆に、第２電極４２の電極列を第１電極４２の電極列よりもホルダー２１に近い位置に配置してもよい。また、隣接した電極列間で電極の種類が異なり、さらに電極位置を配列方向にずらした電極列を３列以上設けてもよい。   In the example of FIG. 13, the electrode array 56 a of the first electrode 41 is disposed closer to the holder 21 than the electrode array 56 b of the second electrode 42, but conversely, The electrode array may be arranged at a position closer to the holder 21 than the electrode array of the first electrode 42. Further, three or more electrode rows in which the electrode types are different between adjacent electrode rows and the electrode positions are shifted in the arrangement direction may be provided.

図１２，図１３に示されるような電極列の配列の場合にも、処理室１４のホルダー２１を挟んで導入口３８側と排気口４７側との各領域にそれぞれ電極ユニットを設けてもよい。   Also in the case of the arrangement of the electrode rows as shown in FIGS. 12 and 13, electrode units may be provided in the respective regions on the introduction port 38 side and the exhaust port 47 side across the holder 21 of the processing chamber 14. .

上記各実施形態では、第１，第２電極の形状を円柱形状としたが、形状はこれに限らず例えば図１４に示す第１，第２電極６１，６２のように角柱形状や、図１５に示す第１，第２電極６３，６４のように板状のものでもよい。また、電極を筒形状としてもよい。   In each of the above embodiments, the shape of the first and second electrodes is a cylindrical shape. However, the shape is not limited to this, for example, a prismatic shape such as the first and second electrodes 61 and 62 shown in FIG. The first and second electrodes 63 and 64 shown in FIG. The electrode may be cylindrical.

図１６は、筒形状の電極の中空な内部に熱媒体を流すことにより電極の温度を制御する例を示すものである。電極６５は上端が開口し、下端が閉じた筒形状となっている。この電極６５を第１，第２電極として真空槽１５に取付けたときに、その中空部の中心に供給管６６が挿入される。供給管６６は、温度制御部６７から熱媒体としての冷却水が供給される。   FIG. 16 shows an example in which the temperature of the electrode is controlled by flowing a heat medium into the hollow interior of the cylindrical electrode. The electrode 65 has a cylindrical shape with an upper end opened and a lower end closed. When this electrode 65 is attached to the vacuum chamber 15 as the first and second electrodes, the supply pipe 66 is inserted into the center of the hollow portion. The supply pipe 66 is supplied with cooling water as a heat medium from the temperature control unit 67.

供給管６６を通して電極６５の中空部の先端にまで冷却水が送られ、その冷却水が供給管６６と電極６５の内壁との間を通って電極６５は上端にまで流れる。電極６５は上端に達した冷却水は、図示しない排水パイプを通して温度制御部６７に送られる。温度制御部６７は、このようにして戻ってくる冷却水の温度に基づいて電極６５の温度が所定の範囲に維持し高温にならないように冷却水の温度や流量を調整する。これにより、電極６５の高温になることによる基板などの被処理物への影響を低減することができる。   Cooling water is sent to the tip of the hollow portion of the electrode 65 through the supply pipe 66, and the cooling water passes between the supply pipe 66 and the inner wall of the electrode 65 and flows to the upper end. The cooling water that has reached the upper end of the electrode 65 is sent to the temperature controller 67 through a drain pipe (not shown). The temperature control unit 67 adjusts the temperature and flow rate of the cooling water so that the temperature of the electrode 65 is maintained within a predetermined range and does not reach a high temperature based on the temperature of the cooling water returning in this way. Thereby, the influence on to-be-processed objects, such as a board | substrate, by the electrode 65 becoming high temperature can be reduced.

図１７に示すように、第１電極４１同士、第２電極４２同士で、それらを上端または下端で順次につないで、それぞれに冷却水を流すように構成してもよい。また、２本の電極の一端、例えば下端を接続して、一方の電極の上端から冷却水を流し入れ、他方の電極の上端から冷却水を排出してもよい。熱媒体の絶縁性が担保できる場合は、第１電極と第２電極とを絶縁性のパイプで接続して、熱媒体を通してもよい。さらに、電極の一端から冷却水を流し入れ、その電極の他端から排出させてもよい。   As shown in FIG. 17, the first electrodes 41 and the second electrodes 42 may be sequentially connected at the upper end or the lower end so that the cooling water flows. Alternatively, one end, for example, the lower end of the two electrodes may be connected, cooling water may be poured from the upper end of one electrode, and the cooling water may be discharged from the upper end of the other electrode. When the insulation of the heat medium can be ensured, the first electrode and the second electrode may be connected by an insulating pipe and passed through the heat medium. Furthermore, cooling water may be poured from one end of the electrode and discharged from the other end of the electrode.

図１８は、各電極として格子形状の電極板を用いた例を示すものである。この例では、第１，第２電極板７１，７２は、いずれも導電性の板部材に多数の矩形状の開口を形成することにより格子状にしてある。第１，第２電極板７１，７２は、プロセスガスの放出方向に互いに離間して配されるとともに、ホルダー２１と導入口との間に、いずれもプロセスガスの放出方向と直交する面内に配される。このようにしても同様な効果が得られる。第１，第２電極板７１，７２に形成する開口は矩形に限らず円形、三角形など様々な形にすることができる。また、規則的に開口を形成する必要はなくランダムでもよい。さらには、第１，第２電極板が網目状であってもよい。   FIG. 18 shows an example in which a grid-shaped electrode plate is used as each electrode. In this example, the first and second electrode plates 71 and 72 are both in a lattice shape by forming a number of rectangular openings in a conductive plate member. The first and second electrode plates 71 and 72 are spaced apart from each other in the process gas discharge direction, and are both in a plane perpendicular to the process gas discharge direction between the holder 21 and the introduction port. Arranged. Even if it does in this way, the same effect is acquired. The openings formed in the first and second electrode plates 71 and 72 are not limited to a rectangle, but may be various shapes such as a circle and a triangle. Moreover, it is not necessary to form an opening regularly, and it may be random. Furthermore, the first and second electrode plates may have a mesh shape.

また、図１に示すプラズマ処理装置では、真空槽の蓋部を上方に移動させて処理室を開放することにより、ホルダーのセットや取り出しを行う構成であるが、ホルダーのセットや取り出すための構成は、各電極の取り付け構造などに応じて適宜変更できる。図１９の例では、真空槽７５を本体部７５ａと、この本体部７５ａから引き出される引き出し部７５ｂとに分けている。本体部７５ａに、第１，第２流路制御板３２，３３、第２流路制御板３３、排気口４７、排気口４７側の電極ユニット５０を設け、引き出し部７５ｂに載置台２９、ガス導入部３０、ガス導入口側の電極ユニット５０を設けている。ホルダー２１のセットや取り出しを行う場合には、本体部７５ａから引き出し部７５ｂを引き出して行う。なお、電極ユニット５０に代えて、他の電極の配列・配置の電極ユニットを設けてもよい。 Further, in the plasma processing apparatus shown in FIG. 1, by opening the processing chamber by moving the lid of the vacuum chamber upwardly, but is configured to perform a set or retrieve the holder, a structure for taking out and set holder Can be appropriately changed according to the mounting structure of each electrode. In the example of FIG. 19, the vacuum chamber 75 is divided into a main body portion 75a and a drawer portion 75b drawn from the main body portion 75a. The main body portion 75a is provided with the first and second flow path control plates 32 and 33, the second flow path control plate 33, the exhaust port 47, and the electrode unit 50 on the exhaust port 47 side. An introduction unit 30 and a gas introduction side electrode unit 50 are provided. When the holder 21 is set or removed, the drawer portion 75b is pulled out from the main body portion 75a. Instead of the electrode unit 50, an electrode unit having another electrode arrangement / arrangement may be provided.

上記各実施形態では、ガス導入部を箱状としたが、ガス導入部は、均一にプロセスガスを放出できるものであればよい。例えば、図２０に示すガス導入部８０は、環状管８１と複数の放出管８２とで構成したものである。環状管８１は、端部がないように中空管を環状に形成したものである。環状管８１は、供給部８３にガス供給パイプ３７が接続されており、プロセスガスが供給部８３を通して環状管８１の内部に供給される。各放出管８２は、直線状の中空管に複数の導入口３８を形成したものである。複数の導入口３８は軸方向に並べて列状に形成してある。放出管８２は、環状管８１の内側で、その両端が環状管８１に接続されている。これにより、環状管８１から放出管８２の内部にプロセスガスを供給し、各導入口３８から放出する。環状管８１に対する放出管８２の両端の接続位置は、供給部８３と異なる位置としてある。 In each of the above embodiments, the gas introduction part has a box shape. However, the gas introduction part may be any as long as it can discharge the process gas uniformly. For example, the gas introduction unit 80 shown in FIG. 20 includes an annular pipe 81 and a plurality of discharge pipes 82. The annular tube 81 is a hollow tube formed in an annular shape so that there is no end. In the annular pipe 81, the gas supply pipe 37 is connected to the supply unit 83, and the process gas is supplied into the annular pipe 81 through the supply unit 83. Each discharge tube 82 is formed by forming a plurality of inlets 38 in a linear hollow tube. The plurality of inlets 38 are arranged in a line in the axial direction. The discharge pipe 82 is connected to the annular pipe 81 at both ends inside the annular pipe 81. As a result, the process gas is supplied from the annular pipe 81 to the inside of the discharge pipe 82 and discharged from each inlet 38. The connection positions of both ends of the discharge pipe 82 with respect to the annular pipe 81 are different from the supply unit 83.

上記のようにガス導入部８０を構成することにより、均一な各放出管８２のそれぞれに均一な圧力でプロスガスを供給し、各導入口３８から放出されるプロセスガスの放出量を均一にしている。そして、これにより、電極ユニット内で発生するプラズマが均一になるようにしている。   By configuring the gas introduction unit 80 as described above, the process gas is supplied to each of the uniform discharge pipes 82 with a uniform pressure, and the amount of process gas discharged from each of the inlets 38 is made uniform. . Thereby, the plasma generated in the electrode unit is made uniform.

上記各実施形態では、第１電極が高周波電圧が印加されるアノード電極、第２電極が接地されたカソード電極となっているが、図２１に一例を示すように、カソード電極としての第２電極４２を接地しない構成としてもよい。   In each of the embodiments described above, the first electrode is an anode electrode to which a high-frequency voltage is applied, and the second electrode is a grounded cathode electrode. However, as shown in FIG. 21 as an example, the second electrode is a cathode electrode. 42 may be configured not to be grounded.

本発明の効果を確認するために、各電極４１，４２が図１０のように配列され、その他構成は、第１実施形態の構成と同じプラズマ処理装置１０でプラズマ処理を行った。また、比較のために、図２２に示す構成の従来のプラズマ処理装置９０で同様の表面処理を行った。なお、プラズマ処理では、プロセスガスとして、アルゴンガスを用い、真空度を１０Ｐａとした。   In order to confirm the effect of the present invention, the electrodes 41 and 42 are arranged as shown in FIG. 10, and the plasma processing is performed by the same plasma processing apparatus 10 as in the first embodiment. For comparison, the same surface treatment was performed with a conventional plasma processing apparatus 90 configured as shown in FIG. In the plasma treatment, argon gas was used as a process gas, and the degree of vacuum was 10 Pa.

プラズマ処理装置９０は、真空槽９１内に高周波電圧が印加される一対の電極板９２の間にホルダーを配置し、真空槽９１自体を接地電極としたものである。このプラズマ処理装置９０では、プラズマ処理装置１０のものと同じホルダ−２１を用い、側板２２が電極板９２に対面するように配した。プロセスガスは、ホルダ−２１の開口２５に対向する位置から真空槽９１内に導入し、それと反対側から排気を行った。   In the plasma processing apparatus 90, a holder is disposed between a pair of electrode plates 92 to which a high-frequency voltage is applied in a vacuum chamber 91, and the vacuum chamber 91 itself is used as a ground electrode. In this plasma processing apparatus 90, the same holder 21 as that of the plasma processing apparatus 10 was used, and the side plate 22 was disposed so as to face the electrode plate 92. The process gas was introduced into the vacuum chamber 91 from a position facing the opening 25 of the holder-21, and exhausted from the opposite side.

［プラズマ洗浄１］
約１０ｃｍ×２０ｃｍの銅板を被処理物としてホルダー２１にセットし、プラズマ処理装置１０、及びプラズマ処理装置９０で、それぞれ１分間処理を行った。処理後、銅板の表面の接触角度を測定した。[Plasma cleaning 1]
A copper plate of about 10 cm × 20 cm was set in the holder 21 as an object to be processed, and the plasma processing apparatus 10 and the plasma processing apparatus 90 were each processed for 1 minute. After the treatment, the contact angle on the surface of the copper plate was measured.

本発明のプラズマ処理装置１０で処理した銅板の表面は、その全面にわたって均一な値の接触角度が得られ、しかも接触角度が低い値となった。この結果より、プラズマ処理装置１０では、ホルダー２１の内には、プラズマが均一に今供給されていることが分かった。   The surface of the copper plate treated with the plasma processing apparatus 10 of the present invention has a uniform contact angle over the entire surface, and has a low contact angle. From this result, it was found that in the plasma processing apparatus 10, the plasma is now uniformly supplied into the holder 21.

他方、従来のプラズマ処理装置９０で処理した銅板は、その表面の接触角度が不均一であり、周辺部と中央部とで差が生じた。周辺部では、低い値の接触角度となったが、中央部では高い値の接触角度となった。この結果から従来のプラズマ処理装置９０では、ホルダー２１内でのプラズマの供給量にムラがあり、銅板の表面に対するプラズマ処理が不均一となることが分かった。   On the other hand, the copper plate processed by the conventional plasma processing apparatus 90 has a non-uniform contact angle on the surface, and a difference has occurred between the peripheral portion and the central portion. In the peripheral portion, the contact angle was low, but in the central portion, the contact angle was high. From this result, it was found that in the conventional plasma processing apparatus 90, the amount of plasma supplied in the holder 21 is uneven, and the plasma processing on the surface of the copper plate becomes non-uniform.

［プラズマ洗浄２］
約１０ｃｍ×２０ｃｍの基板の表面に複数のＩＣチップを搭載したものを被処理物としてホルダー２１にセットし、プラズマ処理装置１０、及びプラズマ処理装置９０で、それぞれ１分間処理を行った。処理後、ＩＣチップの電極と基板の接続面とを金線で接続するワイヤボンディングを実施した。ワイヤボンディングの後に、ＩＣチップの電極と金線との接続信頼性を評価した。接続信頼性は、ＩＣチップの電極と金線との溶着強度（接合強度）をせん断力として測定し、その測定結果に基づいて評価した。せん断力の測定には、ボンドテスター４０００Ｐｌｕｓ（デイジ・ジャパン株式会社製）を用いた。[Plasma cleaning 2]
A substrate having a plurality of IC chips mounted on the surface of a substrate of about 10 cm × 20 cm was set in the holder 21 as an object to be processed, and the plasma processing apparatus 10 and the plasma processing apparatus 90 were each processed for 1 minute. After the treatment, wire bonding was performed to connect the electrode of the IC chip and the connection surface of the substrate with a gold wire. After wire bonding, the connection reliability between the IC chip electrode and the gold wire was evaluated. The connection reliability was evaluated based on the measurement result obtained by measuring the welding strength (bonding strength) between the electrode of the IC chip and the gold wire as the shearing force. For the measurement of the shearing force, a bond tester 4000 Plus (manufactured by Daisy Japan Co., Ltd.) was used.

本発明のプラズマ処理装置１０では、基板の表面の周辺部に搭載されたＩＣチップ、基板の表面の中央部に搭載されたＩＣチップのいずれについても、電極と金線の溶着強度が大きく、ワイヤボンディングの接続信頼性が高いという結果になった。   In the plasma processing apparatus 10 according to the present invention, the welding strength between the electrode and the gold wire is large for both the IC chip mounted on the peripheral portion of the substrate surface and the IC chip mounted on the central portion of the substrate surface. As a result, the connection reliability of bonding was high.

従来のプラズマ処理装置９０で処理したものは、基板の表面の周辺部に搭載されたＩＣチップ、基板の表面の中央部に搭載されたＩＣチップのいずれについても、電極と金線の溶着強度が小さく、ワイヤボンディングの接続信頼性が低いという結果になった。プラズマ処理装置９０による処理時間を２分とした場合も同様な結果となった。   What was processed with the conventional plasma processing apparatus 90 has the welding strength of an electrode and a gold wire about both the IC chip mounted in the peripheral part of the surface of a board | substrate, and the IC chip mounted in the center part of the surface of a board | substrate. As a result, the connection reliability of wire bonding was low. The same result was obtained when the processing time by the plasma processing apparatus 90 was 2 minutes.

以上より、本発明のプラズマ処理装置１０は、短時間でホルダー２１内に十分なプラズマが供給されて、基板の表面が全面的に十分な洗浄性が得られることが確認された。   From the above, it has been confirmed that the plasma processing apparatus 10 of the present invention can supply sufficient plasma into the holder 21 in a short time to obtain a sufficient cleaning property on the entire surface of the substrate.

［プラズマエッチング］
ｉ線レジストを表面に形成した９個のウエハチップをマトリクス状に基板の表面に配置したものを被処理物として、ホルダー２１にセットして、プラズマ処理装置１０、及びプラズマ処理装置９０で、プラズマによるエッチングを実施した。基板のサイズは約１０ｃｍ×２０ｃｍである。また、ホルダー２１には、上下方向に離間させてウエハチップを積層配置した基板を複数枚保持させた。エッチングは、電極４１，４２の温度上昇を考慮して、断続的に５回行った。各１回の処理時間は２分間とし、１回の処理ごとに３０分間の冷却期間を設けた。評価では、エリプソメータを用いてエッチング前後のｉ線レジストの膜厚を測定し、エッチングレートの均一性を評価した。[Plasma etching]
A set of nine wafer chips formed with an i-line resist on the surface of the substrate arranged in a matrix on the surface of the substrate is set as an object to be processed in the holder 21, and the plasma processing apparatus 10 and the plasma processing apparatus 90 Etching was performed. The size of the substrate is about 10 cm × 20 cm. The holder 21 holds a plurality of substrates on which wafer chips are stacked and spaced apart in the vertical direction. The etching was intermittently performed 5 times in consideration of the temperature rise of the electrodes 41 and 42. Each treatment time was 2 minutes, and a cooling period of 30 minutes was provided for each treatment. In the evaluation, the thickness of the i-line resist before and after etching was measured using an ellipsometer, and the uniformity of the etching rate was evaluated.

プラズマ処理装置１０で処理したものは、表面中央部でも周辺部とほぼ同等のエッチングレートが得られていた。また、積層配置された各基板について同様なものとなった。この結果より、プラズマ処理装置１０では、ホルダ−２１内の全体にプラズマが均一に供給されて、均一に処理されていることが確認された。   The thing processed with the plasma processing apparatus 10 was able to obtain the etching rate substantially equivalent to the peripheral part also in the center part of the surface. Moreover, it became the same about each board | substrate laminated | stacked. From this result, it was confirmed that in the plasma processing apparatus 10, the plasma was uniformly supplied to the entire inside of the holder 21 and processed uniformly.

他方、従来のプラズマ処理装置９０で処理したものは、基板の表面に配置されたウエハチップのうちの表面中央部に配されたウエハチップのｉ線レジストに対するエッチングレートが周辺部のものに対して低い結果となった。この結果は、積層配置された各基板について同様なものとなった。   On the other hand, in the case of processing with the conventional plasma processing apparatus 90, the etching rate with respect to the i-line resist of the wafer chip arranged at the center of the surface among the wafer chips arranged on the surface of the substrate is that of the peripheral part The result was low. This result was the same for each of the stacked substrates.

１０ プラズマ処理装置
１１ 基板
１４ 処理室
１８ 高周波電源
２１ ホルダー
２７ 側面開口
３１，５１，５２，５３，５６ 電極ユニット
３１ａ，５１ａ，５２ａ，５２ｂ，５３ａ，５３ｂ，５６ａ，５６ｂ 電極列
３２，３３ 流路制御板
３８ 導入口
４１，４２ 電極
４７ 排気口
７１，７２ 電極板DESCRIPTION OF SYMBOLS 10 Plasma processing apparatus 11 Substrate 14 Processing chamber 18 High frequency power supply 21 Holder 27 Side opening 31, 51, 52, 53, 56 Electrode unit 31a, 51a, 52a, 52b, 53a, 53b, 56a, 56b Electrode row 32, 33 Flow path Control plate 38 Inlet 41, 42 Electrode 47 Exhaust port 71, 72 Electrode plate

Claims (4)

被処理物を処理室内に収容し、真空にした前記処理室内に導入したプロセスガスからプラズマを発生させ、前記プラズマによって前記被処理物の表面に処理を行うプラズマ処理装置において、
一対の側面の間に前記側面と直交する方向で、複数の前記被処理物を間隔あけて積層した状態に保持し、且つ積層された前記被処理物の間の各前記側面の部分を露出する側面開口を有し、前記処理室内に載置されるホルダーと、
前記ホルダーが前記処理室内に載置された状態で、前記ホルダーの一方の前記側面開口に対向して配されるガス導入部であって、前記側面開口に向けて配される複数の導入口を有し、前記導入口からプロセスガスを前記側面開口に向けて放出するガス導入部と、
前記ホルダーが前記処理室内に載置された状態で、前記ホルダーを挟んで前記ガス導入部とは反対側の前記処理室の領域に配され、前記処理室内から前記プラズマを含むプロセスガスを排気する排気口と、
前記プラズマを発生させる高周波電圧を出力する電源と、
前記電源からの高周波電圧が印加される円柱形状の第１電極及び接地される円柱形状の第２電極を有し、前記第１電極及び前記第２電極は、前記ホルダーと前記導入口との間で互いに略平行状態で離間し、且つ前記プロセスガスの放出方向と直交する方向に並べられる１列以上の電極列を有する電極ユニットと、
前記ホルダーの一対の前記側面及び前記処理室への載置面を除く周囲で前記処理室との間に配され、前記処理室を前記導入口側の導入口側空間と前記排気口側の排気口側空間に分けて、前記ホルダーの周囲を通り前記導入口から前記排気口への前記プラズマの流れを抑制する流路制御部材と
を備えるプラズマ処理装置。 Accommodating an object to be processed in the processing chamber to generate a plasma from the process gas introduced into the treatment chamber is evacuated, the plasma treating apparatus for treating the surface of the object to be processed by said plasma,
In a direction perpendicular to the side surface between the pair of side surfaces, holding a plurality of said object to be processed stacked state apart intervals, and to expose portions of each of said side surfaces between the stacked the processing object A holder having a side opening and placed in the processing chamber ;
In the state where the holder is placed in the processing chamber, the gas inlet is arranged to face one side opening of the holder, and a plurality of inlets arranged toward the side opening are provided. a, a gas introducing unit for emitting toward the front SL side opening process gas from the inlet port,
In a state where the holder is placed in the processing chamber, wherein the said gas inlet across the holder is arranged in the region of the processing chamber on the opposite side, exhaust process gas containing the plasma before Symbol treatment chamber An exhaust port to
A power source that outputs a high frequency voltage for generating the plasma,
A first cylindrical electrode to which a high-frequency voltage from the power source is applied and a second cylindrical electrode to be grounded are provided, and the first electrode and the second electrode are between the holder and the introduction port. An electrode unit having one or more electrode rows that are separated from each other in a substantially parallel state and arranged in a direction orthogonal to the process gas discharge direction ;
The holder is disposed between the processing chamber around the pair of side surfaces and the mounting surface on the processing chamber, and the processing chamber is evacuated from the inlet side space on the inlet side and the exhaust side. A plasma processing apparatus comprising: a flow path control member that divides into a mouth side space and suppresses the flow of the plasma from the introduction port to the exhaust port through the periphery of the holder . 前記電極ユニットは、前記ホルダーを挟む位置で、前記導入口側空間及び前記排気口側空間にそれぞれ設けられている請求項１記載のプラズマ処理装置。 The plasma processing apparatus according to claim 1 , wherein the electrode unit is provided in each of the inlet side space and the exhaust side space at a position sandwiching the holder . 前記処理室は箱状であり、前記処理室の側面及び上面を構成する蓋部と、前記処理室の底面部を構成する底面部とを備え、
前記蓋部が前記底面部から離される開放状態で、前記被処理物が積層されている前記ホルダーが前記底面部に載置され、前記ホルダーの載置後に前記蓋部及び前記底面部が閉鎖状態になる請求項１又は２記載のプラズマ処理装置。 The processing chamber is box-shaped, and includes a lid portion that forms a side surface and an upper surface of the processing chamber, and a bottom surface portion that forms a bottom surface portion of the processing chamber,
In the open state in which the lid part is separated from the bottom surface part, the holder on which the workpieces are stacked is placed on the bottom part, and the lid part and the bottom part are closed after the holder is placed. The plasma processing apparatus according to claim 1 or 2 . 前記ホルダーは、前記側面開口が形成される平行な一対の側板と、前記側板の上端縁及び下端縁を連結する天板及び底板を有する角筒であり、前記角筒の両端の開口から前記被処理物がセットされ、前記閉鎖状態では前記開口が前記流路制御部材により塞がれる請求項３記載のプラズマ処理装置。 The holder is a square tube having a pair of parallel side plates in which the side opening is formed, and a top plate and a bottom plate that connect the upper and lower edges of the side plate, and the holder is open from the openings at both ends of the square tube. The plasma processing apparatus according to claim 3, wherein a processing object is set, and the opening is closed by the flow path control member in the closed state .
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