JP5971835B2 - 硬化性シリコーン樹脂組成物及びそれを用いた発光ダイオード装置 - Google Patents
硬化性シリコーン樹脂組成物及びそれを用いた発光ダイオード装置 Download PDFInfo
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- JP5971835B2 JP5971835B2 JP2010185964A JP2010185964A JP5971835B2 JP 5971835 B2 JP5971835 B2 JP 5971835B2 JP 2010185964 A JP2010185964 A JP 2010185964A JP 2010185964 A JP2010185964 A JP 2010185964A JP 5971835 B2 JP5971835 B2 JP 5971835B2
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- silicone resin
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- curable silicone
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- 229920002050 silicone resin Polymers 0.000 title claims description 44
- 239000011342 resin composition Substances 0.000 title claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 239000000945 filler Substances 0.000 claims description 33
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 22
- 238000007789 sealing Methods 0.000 claims description 20
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 10
- 239000003054 catalyst Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 6
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 4
- 229920006127 amorphous resin Polymers 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 description 22
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 13
- -1 siloxane unit Chemical group 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 125000003118 aryl group Chemical group 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 125000001183 hydrocarbyl group Chemical group 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 230000035699 permeability Effects 0.000 description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 125000003342 alkenyl group Chemical group 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 4
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 229910052946 acanthite Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 2
- 229940056910 silver sulfide Drugs 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- PRQREXSTQVWUGV-UHFFFAOYSA-N 6-ethenoxy-6-oxohexanoic acid Chemical compound OC(=O)CCCCC(=O)OC=C PRQREXSTQVWUGV-UHFFFAOYSA-N 0.000 description 1
- 0 CC(C)(**=*)[N+](*)([O-])[Zn] Chemical compound CC(C)(**=*)[N+](*)([O-])[Zn] 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 229930003270 Vitamin B Natural products 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000006103 coloring component Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 229920005645 diorganopolysiloxane polymer Polymers 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- UYMKPFRHYYNDTL-UHFFFAOYSA-N ethenamine Chemical class NC=C UYMKPFRHYYNDTL-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- HOMYFVKFSFMSFF-UHFFFAOYSA-N ethenyl-[ethenyl(diphenyl)silyl]oxy-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=C)O[Si](C=C)(C=1C=CC=CC=1)C1=CC=CC=C1 HOMYFVKFSFMSFF-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- NYMPGSQKHIOWIO-UHFFFAOYSA-N hydroxy(diphenyl)silicon Chemical class C=1C=CC=CC=1[Si](O)C1=CC=CC=C1 NYMPGSQKHIOWIO-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002921 oxetanes Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012763 reinforcing filler Substances 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- XHIBIZYPCKQDCU-UHFFFAOYSA-N tris(ethenyl)-[ethenyl(diphenyl)silyl]oxysilane Chemical compound C=1C=CC=CC=1[Si](C=C)(O[Si](C=C)(C=C)C=C)C1=CC=CC=C1 XHIBIZYPCKQDCU-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 235000019156 vitamin B Nutrition 0.000 description 1
- 239000011720 vitamin B Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5435—Silicon-containing compounds containing oxygen containing oxygen in a ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
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Description
本発明の第2の目的は、良好な発光輝度を有し、一般照明に使用することもできる発光ダイオード装置を提供することにある。
本発明においては、硬化後の屈折率が1.50〜1.55となるシリコーン樹脂と共に、該樹脂中に平均粒径1〜10μmの不定形結晶性酸化珪素フィラーを1〜30質量%の濃度で均一に分散させる。この場合、不定形結晶性酸化珪素フィラーとして、硬化後のシリコーン樹脂の屈折率と同程度である、1.50〜1.56の屈折率を有する不定形結晶性酸化珪素フィラーを使用するが、特に1.52〜1.56の屈折率を有する不定形結晶性酸化珪素フィラーを使用することが好ましい。
上記A成分の有機ケイ素化合物としては、下記平均組成式(1)で表されるオルガノポリシロキサンを使用することが好ましい。
平均組成式(1):
R1R2R3SiO(R4R5SiO)a−(R6R7SiO)b−SiR1R2R3
但し、上式中のR1は非共有結合性の炭素−炭素二重結合を含有する一価の炭化水素基を表し、R2〜R7は、それぞれ同一又は異種の一価炭化水素基を表す。これらのうち、R4〜R7は、脂肪族不飽和結合を除く一価炭化水素基であることが好ましく、R6及び/又はR7は芳香族一価炭化水素基であることが好ましい。a及びbは、0≦a+b≦500の関係を満足する整数であり、好ましくは10≦a+b≦500の整数である。aは0≦a≦500であるが、好ましくは10≦a≦500の整数であり、bは0≦b≦250であるが、好ましくは0≦b≦150の整数である。
本発明で(B)成分として使用する、一分子中にケイ素原子に結合した水素原子を2個以上有するオルガノハイドロジェンポリシロキサンは、架橋剤として作用するものであり、該成分中のSiH基と前記(A)成分中のビニル基等の非共有結合性炭素−炭素二重結合を含有する基(典型的にはアルケニル基)とが付加反応することにより、硬化物が形成される。
本発明で使用する前記(C)成分としては、白金系触媒が用いられる。白金系触媒には塩化白金酸、アルコール変性塩化白金酸、キレート構造を有する白金錯体等が挙げられる。これらは単独で使用することも、2種以上を組み合わせて使用することもできる。
これらの触媒成分の配合量は、硬化有効量である所謂触媒量で良く、通常、前記(A)及び(B)成分の合計量100質量部当り、白金族金属の質量換算で0.1〜500ppm、特に、0.5〜100ppmの範囲で使用される。
本発明に使用する付加硬化型シリコーン樹脂組成物は、上述した(A)〜(C)成分を必須成分とすることが好ましいが、更に、必要に応じて各種のシランカップリング剤を添加してもよい。このようなシランカップリング剤としては、例えば、ビニルトリメトキシシラン、ビニルトリエトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルメチルジエトキシシラン、3−グリシドキシプロピルトリエトキシシラン、3−メタクリロキシプロピルメチルジメトキシシラン、3−メタクリロキシプロピルトリメトキシシラン、3−メタクリロキシプロピルメチルジエトキシシラン、3−メタクリロキシプロピルトリエトキシシラン、N−2(アミノエチル)3−アミノプロピルメチルジメトキシシラン、N−2(アミノエチル)3−アミノプロピルトリメトキシシラン、N−2(アミノエチル)3−アミノプロピルトリエトキシシラン、3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、N−フェニル−3−アミノプロピルトリメトキシラン、3−メルカプトプロピルトリメトキシシラン等や、トリメトキシシラン、テトラメトキシシラン及びそのオリゴマー等が挙げられる。これらのシランカップリング剤は、単独で使用することも2種以上を混合して使用することも可能である。
下記式(I)で表される末端ビニルジメチルジフェニルポリシロキサン(粘度3Pa・s)100部、下記式(II)で表されるメチルハイドロジェンポリシロキサン(粘度15mPa・s)2.5部、塩化白金酸2−エチルヘキシルアルコール変性溶液(Pt濃度は2質量%)0.03部、エチニルシクロヘキシルアルコール0.05部、及び、3−グリシドキシプロピルトリメトキシシラン7部をよく撹拌して、屈折率が1.51のシリコーン組成物を調製した。
前記シリコーン組成物に、不定形結晶性酸化珪素フィラーとして屈折率が1.55で平均粒径1.2μmの龍森製クリスタライトX5を5質量%となるように分散させ、LEDパッケージを封止したものを実施例1とした。同様に前記シリコーン組成物に前記不定形結晶性酸化珪素フィラーを、10質量%、20質量%、30質量%それぞれ分散させ、LEDパッケージを封止したものを実施例2〜4とした。
前記シリコーン組成物に、不定形結晶性酸化珪素フィラーとして屈折率が1.55で平均粒径5μmの龍森製クリスタライトVX-S2を5質量%分散させ、LEDパッケージを封止したものを実施例5とした。同様に前記シリコーン組成物に前記不定形結晶性酸化珪素フィラーを、10質量%、20質量%、30質量%それぞれ分散させ、LEDパッケージを封止したものを実施例6〜8とした。
不定形結晶性酸化珪素フィラーを使用せず、前記シリコーン組成物のみでLEDパッケージを封止したものを比較例1とした。
前記シリコーン組成物に、不定形結晶性酸化珪素フィラーとして屈折率が1.55で平均粒径1.2μmの龍森製クリスタライトX5を40質量%、50質量%分散させ、LEDパッケージを封止したものを比較例2及び3とした。
2・・・・導電性ワイヤー
3・・・・銀メッキリードフレーム
4・・・・硬化性シリコーン組成物
5・・・・モールドパッケージ
6・・・・不定形結晶性酸化珪素フィラー
Claims (5)
- 発光ダイオード装置における封止用に使用する硬化性シリコーン樹脂組成物であって、該組成物が、少なくとも、硬化後の屈折率が1.50〜1.55のシリコーン樹脂と、該シリコーン樹脂中に1〜30質量%の濃度となるように均一に分散された、屈折率が1.50〜1.56で平均粒径が1〜10μmの、不定形結晶性酸化珪素フィラーからなり、硬化後の光透過率が80%以上であることを特徴とする硬化性シリコーン樹脂組成物。
- 前記不定形結晶性酸化珪素フィラーの平均粒径が1〜6μmである、請求項1に記載された硬化性シリコーン樹脂組成物。
- 前記硬化後の屈折率が1.50〜1.55であるシリコーン樹脂が、(A)非共有結合性の炭素−炭素二重結合を有する有機ケイ素化合物、(B)オルガノハイドロジェンポリシロキサン、及び(C)白金系触媒を必須成分とする付加硬化型シリコーン樹脂組成物からなる、請求項1又は2に記載された硬化性シリコーン樹脂組成物。
- 前記不定形結晶性酸化珪素フィラーの、前記シリコーン樹脂中に含有される濃度が5〜15質量%である、請求項1〜3の何れかに記載された硬化性シリコーン樹脂組成物。
- 発光素子が搭載されるリードフレームを有するプレモールドパッケージの前記リードフレームに発光素子を搭載し、硬化性シリコーン樹脂組成物を硬化させたシリコーン樹脂で封止してなる発光ダイオード装置(LED)であって、前記硬化させたシリコーン樹脂が、硬化後の屈折率が1.50〜1.55のシリコーン樹脂中に、屈折率が1.50〜1.56で平均粒径が1〜10μmの不定形結晶性酸化珪素フィラーを1〜30質量%の濃度で分散させてなる、光透過率が80%以上のシリコーン樹脂であることを特徴とする発光ダイオード装置。
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WO2013015591A2 (ko) | 2011-07-22 | 2013-01-31 | 주식회사 엘지화학 | 경화성 조성물 |
WO2014061318A1 (ja) * | 2012-10-19 | 2014-04-24 | 信越化学工業株式会社 | 太陽電池セル封止用シリコーンゲル組成物及び太陽電池モジュール |
US8772814B2 (en) * | 2012-10-26 | 2014-07-08 | Nthdegree Technologies Worldwide Inc. | Phosphor layer containing transparent particles over blue LED |
JP2014187224A (ja) * | 2013-03-25 | 2014-10-02 | Stanley Electric Co Ltd | 半導体発光装置 |
JPWO2015005221A1 (ja) * | 2013-07-08 | 2017-03-02 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 光半導体封止用シリコーン組成物及び光半導体装置 |
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US9840641B2 (en) | 2014-01-24 | 2017-12-12 | Sumitomo Chemical Company, Limited | Silicone resin liquid composition |
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