JP5950128B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5950128B2 JP5950128B2 JP2013534565A JP2013534565A JP5950128B2 JP 5950128 B2 JP5950128 B2 JP 5950128B2 JP 2013534565 A JP2013534565 A JP 2013534565A JP 2013534565 A JP2013534565 A JP 2013534565A JP 5950128 B2 JP5950128 B2 JP 5950128B2
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- 239000004065 semiconductor Substances 0.000 description 13
- 230000015654 memory Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
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- 238000005315 distribution function Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
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- 238000004891 communication Methods 0.000 description 3
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- 239000000463 material Substances 0.000 description 2
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- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B35/00—Stereoscopic photography
- G03B35/08—Stereoscopic photography by simultaneous recording
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
- H04N13/218—Image signal generators using stereoscopic image cameras using a single 2D image sensor using spatial multiplexing
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
- H04N13/229—Image signal generators using stereoscopic image cameras using a single 2D image sensor using lenticular lenses, e.g. arrangements of cylindrical lenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
- H04N13/232—Image signal generators using stereoscopic image cameras using a single 2D image sensor using fly-eye lenses, e.g. arrangements of circular lenses
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
- Stereoscopic And Panoramic Photography (AREA)
Description
図1は、本発明の第1の実施形態の撮像装置(カメラ)の概略構成を示す図である。
以下、本発明の第2の実施形態の撮像装置について説明する。
以下、本発明の第3の実施形態の撮像装置について説明する。
図16は、図3の領域Aおよび領域Bを通過する光を個別に受光する単位セルの2次元配列例を示す図である。なお、図16では、第1の単位セル201は領域Aからの光105を受光する単位セル3に対応し、第2の単位セル202は領域Bからの光106を受光する単位セル3に対応している。
以上、図面を用いて説明したように、本発明の実施形態に係る固体撮像装置は、受光素子とマイクロレンズとを備えた単位セルを2次元状に配列した固体撮像装置であって、前記マイクロレンズは前記受光素子に入射する光の入射角度範囲を制限し、左右または上下に隣接する単位セル間で受光素子に入射する光の入射角度依存性を示す光量分布の最大値での入射角度が前記光量分布の交点の入射角度に対して対称であり前記最大値での入射角度が互いに異なる。
10、701 画素部
14 垂直走査回路
18 水平信号線
19 垂直信号線
25 AD変換回路
26 カラムAD回路
27 参照信号生成部
27a DAC
28 出力I/F
30 通信・タイミング制御部
42 カラムアンプ
101、501、507、508、1001 レンズ
103、503C、503D、1003 焦点
104、504、1004 被写体
105、106、505、506、1005A、1005B、1005C、1005D 光
201、602、1101 第1の単位セル
202、601、1102 第2の単位セル
210 光透過膜
252 電圧比較部
254 カウンタ部
256 データ記憶部
258 スイッチ
262 信号保持容量
263 信号保持スイッチ
502、1002、1401 固体撮像装置
603、1103 第3の単位セル
604、1104 第4の単位セル
901a、901b、901c、901d、907、1305 マイクロレンズ
903 半導体基板
904 受光素子
905 光
906 遮光膜
908 層内マイクロレンズ
1301、1302 マスクパターン
1303 上段集光部
1304 下段集光部
1402 信号処理部
1403 メモリ部
1404 出力部
1405 モニタ部
Claims (3)
- 一つのカメラレンズで構成される撮像カメラに用いる固体撮像装置であって、
受光素子と、前記受光素子に入射光を集光する集光素子と、層内集光素子とを有する画素が2次元状に複数配列され、
前記一つのカメラレンズ内の第1の領域からの光を集光する第1の画素、および、前記一つのカメラレンズ内の前記第1の領域と異なる第2の領域からの光を集光し、前記第1の画素と隣り合う第2の画素を有し、
前記画素では、前記受光素子に入射する光の光量が前記画素に入射する光の入射角度に依存して変化するように、前記集光素子と前記層内集光素子とが集光を行い、
前記第1の画素は、第1の入射角度で光が入射したときに前記受光素子に入射する光の光量が最大となるように、前記第1の領域からの光を集光し、
前記第2の画素は、第2の入射角度で光が入射したときに前記受光素子に入射する光の光量が最大となるように、前記第2の領域からの光を集光し、
前記第1の画素に第3の入射角度で光が入射したときの前記受光素子に入射する光の光量と、前記第2の画素に前記第3の入射角度で光が入射したときの前記受光素子に入射する光の光量とは等しく、
前記第1の入射角度は、前記第3の入射角度より所定量だけ大きく、
前記第2の入射角度は、前記第3の入射角度より前記所定量だけ小さく、
前記層内集光素子は、入射光の波長と同程度かそれよりも短い線幅で分離され、受光面に対して垂直な方向の軸を中心軸とする同心構造の複数の光透過膜の組み合わせによって制御した実効屈折率分布を有し、
前記層内集光素子の前記複数の光透過膜の前記同心構造のパターンが、前記第1の画素と前記第2の画素とで異なる
固体撮像装置。 - 前記第1の画素と前記第2の画素とは、列方向および行方向のうち少なくとも一方の方向に交互に配置される
請求項1に記載の固体撮像装置。 - 前記集光素子は、隣接する前記第1の画素と前記第2の画素とに跨って配置される
請求項2に記載の固体撮像装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011204265 | 2011-09-20 | ||
JP2011204265 | 2011-09-20 | ||
PCT/JP2012/000359 WO2013042281A1 (ja) | 2011-09-20 | 2012-01-20 | 固体撮像装置 |
Publications (2)
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JPWO2013042281A1 JPWO2013042281A1 (ja) | 2015-03-26 |
JP5950128B2 true JP5950128B2 (ja) | 2016-07-13 |
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JP2013534565A Active JP5950128B2 (ja) | 2011-09-20 | 2012-01-20 | 固体撮像装置 |
Country Status (4)
Country | Link |
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US (1) | US9466626B2 (ja) |
JP (1) | JP5950128B2 (ja) |
CN (1) | CN103828346B (ja) |
WO (1) | WO2013042281A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6051568B2 (ja) * | 2012-04-09 | 2016-12-27 | 株式会社ニコン | 撮像素子および撮像装置 |
EP3171587A4 (en) * | 2014-07-16 | 2018-03-14 | Sony Corporation | Compound-eye imaging device |
US10455214B2 (en) | 2016-03-03 | 2019-10-22 | Disney Enterprises, Inc. | Converting a monocular camera into a binocular stereo camera |
KR20210059290A (ko) * | 2019-11-15 | 2021-05-25 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
US11569736B2 (en) * | 2021-02-25 | 2023-01-31 | Texas Instruments Incorporated | Self-adjusting DC/DC converter soft-start mechanism |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP3628717B2 (ja) | 1994-03-17 | 2005-03-16 | オリンパス株式会社 | 立体視内視鏡 |
US5743846A (en) | 1994-03-17 | 1998-04-28 | Olympus Optical Co., Ltd. | Stereoscopic endoscope objective lens system having a plurality of front lens groups and one common rear lens group |
JP2003007994A (ja) * | 2001-06-27 | 2003-01-10 | Konica Corp | 固体撮像素子、立体カメラ装置及び測距装置 |
JP4248771B2 (ja) | 2001-06-27 | 2009-04-02 | オリンパス株式会社 | 内視鏡装置 |
JP4418178B2 (ja) | 2003-06-12 | 2010-02-17 | オリンパス株式会社 | 撮像装置及び電子内視鏡装置 |
CN100492064C (zh) * | 2004-04-13 | 2009-05-27 | 松下电器产业株式会社 | 聚光元件以及固体摄像装置 |
JP4546797B2 (ja) * | 2004-09-24 | 2010-09-15 | パナソニック株式会社 | 固体撮像装置、その製造方法およびカメラ |
JP2006165601A (ja) * | 2004-12-02 | 2006-06-22 | Sony Corp | 撮像装置及び撮像素子 |
JP2007279512A (ja) * | 2006-04-10 | 2007-10-25 | Fujifilm Corp | 立体カメラ及び立体撮像素子 |
JP4952060B2 (ja) * | 2006-05-26 | 2012-06-13 | 株式会社ニコン | 撮像装置 |
JP2008010773A (ja) * | 2006-06-30 | 2008-01-17 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
JP2009206356A (ja) * | 2008-02-28 | 2009-09-10 | Toshiba Corp | 固体撮像装置およびその製造方法 |
-
2012
- 2012-01-20 WO PCT/JP2012/000359 patent/WO2013042281A1/ja active Application Filing
- 2012-01-20 CN CN201280045139.7A patent/CN103828346B/zh active Active
- 2012-01-20 JP JP2013534565A patent/JP5950128B2/ja active Active
-
2014
- 2014-03-13 US US14/208,378 patent/US9466626B2/en active Active
Also Published As
Publication number | Publication date |
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JPWO2013042281A1 (ja) | 2015-03-26 |
WO2013042281A1 (ja) | 2013-03-28 |
US20140191356A1 (en) | 2014-07-10 |
CN103828346B (zh) | 2017-06-27 |
US9466626B2 (en) | 2016-10-11 |
CN103828346A (zh) | 2014-05-28 |
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