JP5941880B2 - 不融解性薄膜ウェハのレーザアニール方法 - Google Patents
不融解性薄膜ウェハのレーザアニール方法 Download PDFInfo
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- 238000005224 laser annealing Methods 0.000 title description 28
- 238000000137 annealing Methods 0.000 claims description 105
- 239000010410 layer Substances 0.000 claims description 42
- 238000002844 melting Methods 0.000 claims description 26
- 230000008018 melting Effects 0.000 claims description 23
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- 238000009792 diffusion process Methods 0.000 claims description 20
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- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000031700 light absorption Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 description 54
- 239000002019 doping agent Substances 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 230000004913 activation Effects 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 230000035515 penetration Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000637 aluminium metallisation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
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- 230000002829 reductive effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
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Description
Claims (24)
- デバイスウェハとキャリアウェハとを接合して形成される半導体製品ウェハのアニール方法であって、
前記デバイスウェハは、厚さdを有し、裏側にアニール領域を有すると共に、表側に臨界温度Tcを超えると損傷するであろう電気デバイス主要部を有し、
前記裏側にアニールレーザ光線を走査して前記アニール領域を、前記半導体製品ウェハの融点TM未満のアニール温度TAまで加熱してアニールすることを備え、
前記走査には熱拡散長LDが考慮され、
前記熱拡散長LDが前記厚さdよりも小さくなる滞留時間t d で前記走査を行うことと、
d 2 /D eff で規定される最大滞留時間t dm 未満の前記滞留時間t d を選択することと
をさらに備え、
前記D eff は、前記デバイスウェハの有効熱拡散率であり、
前記電気デバイス主要部は、前記臨界温度TC以下に保たれる
半導体製品ウェハのアニール方法。 - 前記アニール領域は、イオン注入層または接点層である
請求項1に記載の方法。 - 前記滞留時間は、3マイクロ秒から200マイクロ秒の範囲内である
請求項1または2に記載の方法。 - 前記電気デバイス主要部は、金属を含み、
前記臨界温度TCは、約600℃から約900℃の範囲内である
請求項1から3のいずれかに記載の方法。 - 前記アニールレーザ光線は、薄膜ウェハ厚さ未満の光吸収長を有する可視光波長または赤外線波長を有する
請求項1から4のいずれかに記載の方法。 - 前記電気デバイス主要部には、CMOSデバイス層が含まれる
請求項1から5のいずれかに記載の方法。 - 前記電気デバイス主要部には、半導体電源デバイス層が含まれる
請求項1から6のいずれかに記載の方法。 - 前記裏側の同一部分に対して複数回走査を行うことをさらに備え、
時間間欠走査が時間間隔τで時間的に分割されており、
τは、1ミリ秒以上10秒以下の範囲内である
請求項1から7のいずれかに記載の方法。 - 走査回数が10回以下である
請求項8に記載の方法。 - dは、5μm以上150μm以下の範囲内である
請求項1から9のいずれかに記載の方法。 - dは、10μm以上20μm以下の範囲内であり、
前記電気デバイス主要部は、アルミニウムから形成されており、
前記滞留時間tdは、約3マイクロ秒から約20マイクロ秒の範囲内である
請求項1から10のいずれかに記載の方法。 - dは、10μm以上20μm以下の範囲内であり、
前記電気デバイス主要部は、銅から形成されており、
前記滞留時間tdは、約15マイクロ秒から約100マイクロ秒の範囲内である
請求項1から11のいずれかに記載の方法。 - 裏側と、5ミクロンから150ミクロンの範囲内の厚みdとを有するデバイスウェハの表側に保護構造を形成して製品ウェハを形成することと、
前記デバイスウェハの内部または前記裏側にアニール領域を形成することと、
前記裏側にアニールレーザ光線を走査して前記アニール領域の不融解アニールを行うことと
を備え、
前記表側には、臨界温度Tcを超えて加熱されると損傷するであろう電気デバイス主要部が含まれ、
前記走査は、dよりも小さい熱拡散長LDを規定する滞留時間t d で行われ、
前記滞留時間t d は、d 2 /D eff (ここで、D eff は、前記デバイスウェハの有効熱拡散率である)で規定される最大滞留時間t dm 未満であり、
前記電気デバイス主要部は、前記臨界温度TC以下に保たれる
製品ウェハのアニール方法。 - 前記アニール領域は、前記裏側内部に形成されるイオン注入ドープ層、または、前記裏側に形成される接点層である
請求項13に記載の方法。 - 前記裏側の同一部分に対して複数回走査を行うことをさらに備え、
時間間欠走査が時間間隔τで時間的に分割されており、
τは1ミリ秒以上10秒以下の範囲内である
請求項13または14に記載の方法。 - 走査回数が10回以下である
請求項15に記載の方法。 - 前記保護構造には、キャリアウェハが含まれる
請求項13から16のいずれかに記載の方法。 - 前記保護構造は、単一の保護層から構成される
請求項13から17のいずれかに記載の方法。 - 前記電気デバイス主要部には、金属およびCMOS層の少なくとも一方が含まれている
請求項13から18のいずれかに記載の方法。 - 前記電気デバイス主要部には、半導体電源デバイス層が含まれている
請求項13から19のいずれかに記載の方法。 - 前記滞留時間は、3マイクロ秒から200マイクロ秒の範囲内である
請求項13から20のいずれかに記載の方法。 - 前記アニールレーザ光線は、薄膜ウェハ厚さ未満の光吸収長を有する可視光波長または赤外線波長を有する
請求項13から21のいずれかに記載の方法。 - dは、10μm以上20μm以下の範囲内であり、
前記電気デバイス主要部は、アルミニウムから形成されており、
前記滞留時間tdは、約3マイクロ秒から約20マイクロ秒の範囲内である
請求項13から22のいずれかに記載の方法。 - dは、10μm以上20μm以下の範囲内であり、
前記電気デバイス主要部は、銅から形成されており、
前記滞留時間tdは、約15マイクロ秒から約100マイクロ秒の範囲内である
請求項13から23のいずれかに記載の方法。
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US13/595,873 | 2012-08-27 | ||
US13/595,873 US9490128B2 (en) | 2012-08-27 | 2012-08-27 | Non-melt thin-wafer laser thermal annealing methods |
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US (1) | US9490128B2 (ja) |
JP (1) | JP5941880B2 (ja) |
KR (1) | KR20140027880A (ja) |
CN (1) | CN103632938A (ja) |
DE (1) | DE102013013514A1 (ja) |
SG (1) | SG2013063300A (ja) |
TW (1) | TWI546863B (ja) |
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WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10083843B2 (en) * | 2014-12-17 | 2018-09-25 | Ultratech, Inc. | Laser annealing systems and methods with ultra-short dwell times |
DE102015106397B4 (de) * | 2015-04-16 | 2019-08-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Verfahren und Systeme zur Dotierstoffaktivierung mithilfe von Mikrowellenbestrahlung |
US9455185B1 (en) * | 2015-12-17 | 2016-09-27 | International Business Machines Corporation | Laser anneal of buried metallic interconnects including through silicon vias |
EP3451365B1 (en) * | 2016-04-27 | 2023-08-16 | Sumitomo Heavy Industries, Ltd. | Laser annealing method |
US10665504B2 (en) | 2017-07-28 | 2020-05-26 | Veeco Instruments Inc. | Laser-based systems and methods for melt-processing of metal layers in semiconductor manufacturing |
JP2019071373A (ja) * | 2017-10-11 | 2019-05-09 | 三菱電機株式会社 | 熱処理方法および熱処理装置 |
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EP3667704A1 (en) * | 2018-12-13 | 2020-06-17 | Laser Systems & Solutions of Europe | Method for thermally processing a substrate and associated system |
CN112864040A (zh) * | 2019-11-26 | 2021-05-28 | 上海微电子装备(集团)股份有限公司 | 激光退火装置 |
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- 2013-08-14 DE DE102013013514.1A patent/DE102013013514A1/de not_active Withdrawn
- 2013-08-19 SG SG2013063300A patent/SG2013063300A/en unknown
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TWI546863B (zh) | 2016-08-21 |
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US20140057457A1 (en) | 2014-02-27 |
DE102013013514A1 (de) | 2014-02-27 |
SG2013063300A (en) | 2014-03-28 |
US9490128B2 (en) | 2016-11-08 |
KR20140027880A (ko) | 2014-03-07 |
TW201409577A (zh) | 2014-03-01 |
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