JP5921192B2 - 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 - Google Patents
気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 170
- 230000005693 optoelectronics Effects 0.000 title claims description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 42
- 239000002344 surface layer Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910008599 TiW Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Description
Claims (16)
- 活性領域(10)を含む半導体ボディ(1)と、
鏡面層(2)と、
前記半導体ボディ(1)と前記鏡面層(2)とのあいだに配置され、前記半導体ボディ(1)と前記鏡面層(2)とのあいだの距離(D)を定める複数のコンタクト点(3)と
を有する、
オプトエレクトロニクス半導体チップにおいて、
前記半導体ボディ(1)と前記鏡面層(2)とのあいだに少なくとも1つの中空室(4)が形成されており、
該少なくとも1つの中空室(4)に気体(40)が含まれており、
前記鏡面層(2)は水平方向において全てのコンタクト点(3)を超えて延在しており、
前記鏡面層(2)は、高屈折率材料の層と低屈折率材料の層とを交互に配置して成るブラッグ鏡である
ことを特徴とするオプトエレクトロニクス半導体チップ。 - 前記複数のコンタクト点(3)のうち少なくとも1つは閉じた導体路を形成している、請求項1記載のオプトエレクトロニクス半導体チップ。
- 前記複数のコンタクト点(3)のうち少なくとも1つを介して、当該オプトエレクトロニクス半導体チップの動作中に所定の電流が前記活性領域(10)へ注入される、請求項2記載のオプトエレクトロニクス半導体チップ。
- 前記少なくとも1つの中空室(4)がパシベーション材料(5)によって封止されている、請求項1から3までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記気体(40)は前記少なくとも1つの中空室(4)内に常圧よりも小さい圧力で封入されている、請求項1から4までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記複数のコンタクト点(3)は前記半導体ボディ(1)に直接に接している、請求項1から5までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記鏡面層(2)と前記半導体ボディ(1)とのあいだの距離(D)は10nm以上10μm以下である、請求項1から6までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記鏡面層(2)は、ブラッグ鏡と金属鏡との組み合わせであり、
前記金属鏡は、前記活性領域(10)に面する向きで、前記ブラッグ鏡上に配置されている、請求項1から7までのいずれか1項記載のオプトエレクトロニクス半導体チップ。 - 前記複数のコンタクト点(3)は、はんだ材料Sn,In,Ga,Biのうち少なくとも1つを含んでいる、請求項1から8までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記鏡面層(2)は支持体(7)上に被着されており、該支持体(7)は前記鏡面層(2)の、前記中空室(4)および前記半導体ボディ(1)から遠い側に位置する、請求項1から9までのいずれか1項記載のオプトエレクトロニクス半導体チップ。
- 前記支持体(7)と前記鏡面層(2)とのあいだに阻止層(6)が配置されている、請求項10記載のオプトエレクトロニクス半導体チップ。
- 少なくとも1つの活性領域(10)を備えた半導体ボディ(1)を用意するステップ、
鏡面層(2)を備えた支持体(7)を用意するステップ、
複数のコンタクト点(3)を前記鏡面層(2)の上面(2a)および/または前記半導体ボディ(1)の下面(1b)に被着するステップ、
熱圧着により、前記複数のコンタクト点(3)を介して前記半導体ボディ(1)と前記鏡面層(2)とを接続し、前記複数のコンタクト点(3)によって前記半導体ボディ(1)と前記鏡面層(2)とのあいだの距離(D)を定めるステップ、ならびに、
前記半導体ボディ(1)と前記鏡面層(2)とのあいだに少なくとも1つの中空室(4)を形成し、該中空室に気体(40)を封入するステップ
を有し、
前記鏡面層(2)は、高屈折率材料の層と低屈折率材料の層とを交互に配置して成るブラッグ鏡である
ことを特徴とするオプトエレクトロニクス半導体チップの製造方法。 - 前記鏡面層(2)は、ブラッグ鏡と金属鏡との組み合わせであり、
前記金属鏡は、前記活性領域(10)に面する向きで、前記ブラッグ鏡上に配置されている、請求項12記載のオプトエレクトロニクス半導体チップの製造方法。 - 前記複数のコンタクト点(3)をプリンティングプロセスにより被着する、請求項12または13記載のオプトエレクトロニクス半導体チップの製造方法。
- 前記複数のコンタクト点(3)を蒸着プロセスにより被着する、請求項12または13記載のオプトエレクトロニクス半導体チップの製造方法。
- 前記複数のコンタクト点(3)を、小さな部材として被着する、請求項12または13記載のオプトエレクトロニクス半導体チップの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102008039360.6 | 2008-08-22 | ||
DE102008039360.6A DE102008039360B4 (de) | 2008-08-22 | 2008-08-22 | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
PCT/DE2009/001111 WO2010020213A1 (de) | 2008-08-22 | 2009-08-05 | Optoelektronischer halbleiterchip mit gas-gefülltem spiegel |
Publications (3)
Publication Number | Publication Date |
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JP2012501065A JP2012501065A (ja) | 2012-01-12 |
JP2012501065A5 JP2012501065A5 (ja) | 2015-11-26 |
JP5921192B2 true JP5921192B2 (ja) | 2016-05-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011523298A Active JP5921192B2 (ja) | 2008-08-22 | 2009-08-05 | 気体の充填された鏡を備えたオプトエレクトロニクス半導体チップおよびその製造方法 |
Country Status (7)
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US (1) | US8761219B2 (ja) |
EP (1) | EP2316133A1 (ja) |
JP (1) | JP5921192B2 (ja) |
KR (1) | KR101704831B1 (ja) |
CN (1) | CN102099926B (ja) |
DE (1) | DE102008039360B4 (ja) |
WO (1) | WO2010020213A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US8957490B2 (en) | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
KR102465406B1 (ko) * | 2016-01-07 | 2022-11-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
DE102018101389A1 (de) * | 2018-01-23 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips |
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EP0683921B1 (en) * | 1993-02-04 | 2004-06-16 | Cornell Research Foundation, Inc. | Microstructures and single mask, single-crystal process for fabrication thereof |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
WO1998040915A1 (fr) * | 1997-03-10 | 1998-09-17 | Seiko Epson Corporation | Composant electronique et dispositif a semi-conducteurs, procede de fabrication correspondant, carte a circuit imprime ainsi equipee, et equipement electronique comportant cette carte a circuit imprime |
KR100589449B1 (ko) * | 1997-04-17 | 2006-06-14 | 세키스이가가쿠 고교가부시키가이샤 | 전자회로부품 |
EP1419534A2 (de) * | 2001-08-24 | 2004-05-19 | Schott Glas | Verfahren zum kontaktieren und gehäusen von integrierten schaltungen |
DE10164800B4 (de) * | 2001-11-02 | 2005-03-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines elektronischen Bauelements mit mehreren übereinander gestapelten und miteinander kontaktierten Chips |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
US6903381B2 (en) * | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
JP2004332017A (ja) * | 2003-05-01 | 2004-11-25 | Sumitomo Electric Ind Ltd | ハンダ皮膜の製造方法、ハンダ皮膜を備えたヒートシンク、および半導体素子とヒートシンクの接合体 |
WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
DE102007003282B4 (de) | 2007-01-23 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
-
2008
- 2008-08-22 DE DE102008039360.6A patent/DE102008039360B4/de active Active
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2009
- 2009-08-05 KR KR1020117003395A patent/KR101704831B1/ko active IP Right Grant
- 2009-08-05 EP EP09776069A patent/EP2316133A1/de not_active Withdrawn
- 2009-08-05 WO PCT/DE2009/001111 patent/WO2010020213A1/de active Application Filing
- 2009-08-05 US US13/002,352 patent/US8761219B2/en active Active
- 2009-08-05 JP JP2011523298A patent/JP5921192B2/ja active Active
- 2009-08-05 CN CN2009801276923A patent/CN102099926B/zh active Active
Also Published As
Publication number | Publication date |
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US8761219B2 (en) | 2014-06-24 |
DE102008039360B4 (de) | 2021-05-12 |
US20110164644A1 (en) | 2011-07-07 |
KR101704831B1 (ko) | 2017-02-08 |
WO2010020213A1 (de) | 2010-02-25 |
DE102008039360A1 (de) | 2010-02-25 |
CN102099926B (zh) | 2013-04-24 |
JP2012501065A (ja) | 2012-01-12 |
EP2316133A1 (de) | 2011-05-04 |
CN102099926A (zh) | 2011-06-15 |
KR20110068974A (ko) | 2011-06-22 |
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