JP5911580B2 - ポジティブ型感光性樹脂組成物、これから形成された絶縁膜および有機発光素子、並びにポジティブ型感光性樹脂組成物の製造方法 - Google Patents
ポジティブ型感光性樹脂組成物、これから形成された絶縁膜および有機発光素子、並びにポジティブ型感光性樹脂組成物の製造方法 Download PDFInfo
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- JP5911580B2 JP5911580B2 JP2014528309A JP2014528309A JP5911580B2 JP 5911580 B2 JP5911580 B2 JP 5911580B2 JP 2014528309 A JP2014528309 A JP 2014528309A JP 2014528309 A JP2014528309 A JP 2014528309A JP 5911580 B2 JP5911580 B2 JP 5911580B2
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- bis
- photosensitive resin
- positive photosensitive
- hydroxyphenyl
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- 239000011342 resin composition Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229920001721 polyimide Polymers 0.000 claims description 47
- 229920005575 poly(amic acid) Polymers 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 40
- 239000009719 polyimide resin Substances 0.000 claims description 37
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 30
- 239000002904 solvent Substances 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 23
- 238000002834 transmittance Methods 0.000 claims description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 18
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 15
- -1 4-aminophenoxy Chemical group 0.000 claims description 14
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims description 14
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000003623 enhancer Substances 0.000 claims description 12
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 150000004984 aromatic diamines Chemical class 0.000 claims description 9
- 238000005227 gel permeation chromatography Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- WXYSZTISEJBRHW-UHFFFAOYSA-N 4-[2-[4-[1,1-bis(4-hydroxyphenyl)ethyl]phenyl]propan-2-yl]phenol Chemical compound C=1C=C(C(C)(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 WXYSZTISEJBRHW-UHFFFAOYSA-N 0.000 claims description 7
- 239000003054 catalyst Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 7
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 6
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 claims description 6
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 claims description 6
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 claims description 6
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 claims description 6
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 claims description 6
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 claims description 4
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical group C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 claims description 4
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000691 measurement method Methods 0.000 claims description 4
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 claims description 3
- VNAOAABUWOXVLO-UHFFFAOYSA-N 3-[3-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(C=CC=2)C(C(F)(F)F)C(F)(F)F)=C1 VNAOAABUWOXVLO-UHFFFAOYSA-N 0.000 claims description 3
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 claims description 3
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 claims description 3
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 claims description 3
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 claims description 3
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical group FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 claims description 3
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 claims description 3
- JLTDJTHDQAWBAV-UHFFFAOYSA-N N,N-dimethylaniline Chemical compound CN(C)C1=CC=CC=C1 JLTDJTHDQAWBAV-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical group C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 claims description 2
- JYCTWJFSRDBYJX-UHFFFAOYSA-N 5-(2,5-dioxooxolan-3-yl)-3a,4,5,9b-tetrahydrobenzo[e][2]benzofuran-1,3-dione Chemical compound O=C1OC(=O)CC1C1C2=CC=CC=C2C(C(=O)OC2=O)C2C1 JYCTWJFSRDBYJX-UHFFFAOYSA-N 0.000 claims description 2
- MQAHXEQUBNDFGI-UHFFFAOYSA-N 5-[4-[2-[4-[(1,3-dioxo-2-benzofuran-5-yl)oxy]phenyl]propan-2-yl]phenoxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC2=CC=C(C=C2)C(C)(C=2C=CC(OC=3C=C4C(=O)OC(=O)C4=CC=3)=CC=2)C)=C1 MQAHXEQUBNDFGI-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 2
- SSDBTLHMCVFQMS-UHFFFAOYSA-N 4-[4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 SSDBTLHMCVFQMS-UHFFFAOYSA-N 0.000 claims 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 claims 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 claims 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 claims 1
- 239000001294 propane Substances 0.000 claims 1
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
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- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical class OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 2
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- WQCSLQBRPJWOID-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC(O)=C1O WQCSLQBRPJWOID-UHFFFAOYSA-N 0.000 description 1
- GKQOIQKMFFMJLF-UHFFFAOYSA-N (2-hydroxyphenyl)-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C(=CC=CC=2)O)=C1O GKQOIQKMFFMJLF-UHFFFAOYSA-N 0.000 description 1
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical class OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- SEPPVOUBHWNCAW-FNORWQNLSA-N (E)-4-oxonon-2-enal Chemical compound CCCCCC(=O)\C=C\C=O SEPPVOUBHWNCAW-FNORWQNLSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- BIEJPBBEABOGMM-UHFFFAOYSA-N 2-[4-(2-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC=C1OC(C=C1)=CC=C1OC1=CC=CC=C1N BIEJPBBEABOGMM-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- ZRYCRPNCXLQHPN-UHFFFAOYSA-N 3-hydroxy-2-methylbenzaldehyde Chemical compound CC1=C(O)C=CC=C1C=O ZRYCRPNCXLQHPN-UHFFFAOYSA-N 0.000 description 1
- LLBZPESJRQGYMB-UHFFFAOYSA-N 4-one Natural products O1C(C(=O)CC)CC(C)C11C2(C)CCC(C3(C)C(C(C)(CO)C(OC4C(C(O)C(O)C(COC5C(C(O)C(O)CO5)OC5C(C(OC6C(C(O)C(O)C(CO)O6)O)C(O)C(CO)O5)OC5C(C(O)C(O)C(C)O5)O)O4)O)CC3)CC3)=C3C2(C)CC1 LLBZPESJRQGYMB-UHFFFAOYSA-N 0.000 description 1
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VPXAQKVKHNGWAH-UHFFFAOYSA-N OC1=C(C(=O)C2=C(C=CC=C2)O)C=CC(C1O)(O)O Chemical class OC1=C(C(=O)C2=C(C=CC=C2)O)C=CC(C1O)(O)O VPXAQKVKHNGWAH-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N anhydrous gallic acid Natural products OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229930003944 flavone Natural products 0.000 description 1
- 235000011949 flavones Nutrition 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 125000003717 m-cresyl group Chemical group [H]C1=C([H])C(O*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229940100630 metacresol Drugs 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229960005222 phenazone Drugs 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000541 tocopherol-rich extract Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Materials For Photolithography (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Electroluminescent Light Sources (AREA)
Description
a.ポリイミド樹脂の重合
反応器として攪拌器、窒素注入装置、滴下漏斗、温度調節器および冷却器を取り付けた100mLの三つ口丸底フラスコに窒素を通過させながら、N,N−ジメチルアセトアミド(DMAc)81.051gを充填し、反応器の温度を0℃に降温した後、Bis−AP−AF9.1565g(0.25mol)を溶解させ、この溶液を0℃に維持した。ここに6FDA11.10625g(0.25mol)を添加し、1時間攪拌して6FDAを完全に溶解させた。この際、固形分の濃度は20重量%であった。その後、溶液を常温に放置して1時間攪拌した。この際、23℃での溶液粘度が470cpsのポリアミド酸溶液を得た。
前記重合製造したポリイミド樹脂(重合中間体たるポリアミド酸溶液の粘度が470cpsであり、これをイミド化させた樹脂の重量平均分子量が48,000g/molの樹脂)100重量部に対して、感光性化合物((1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼン)−1,2−ナフトキノンジアジド−5−スルホネート)50重量部、感度増進剤(1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼン)12.5重量部、溶媒(プロピレングリコールモノメチルエーテルアセテート)660重量部、その他の添加剤としてレベリング剤の用途にシリコン添加剤4.2重量部を添加して2時間攪拌させることにより、感光性樹脂組成物を製造した。
上述のように製造された感光性樹脂組成物をITO基材上に3.0μmの厚さにスピンコートした後、120℃のホットプレートで100秒間予備熱処理することにより、乾燥後の厚さが1.5±0.05μmのコーティング膜を形成した。前記基材をフォトマスクを用いて80mJ/cm2程度の紫外線に照射した後、2.38%のTMAHアルカリ現像液で60秒間現像し、40秒間水洗すると、未露光部分は残り、回路を形成するが、この際の解像度を電子顕微鏡で観察した(最終厚さ1.5μm)。
解像度の評価と同一の方法で回路を形成するが、15μmの解像度パターンで残渣なしに現像が可能であるか否かを電子顕微鏡で観察した。
前述のように製造されたポリイミド重合樹脂をN,N−ジメチルアセトアミド(DMAc)に50%溶液として製造し、ITO基板(50mm×50mm)にスピンコートした後、それぞれの試料をオーブンで100℃、150℃、200℃、250℃、300℃でそれぞれ30分ずつ硬化(curing)して各温度でのFT−IRスペクトルを得る。一般に、スペクトル測定結果、ポリイミドC−N−Cに由来する1370cm−1とベンゼン環に由来する1496cm−1の相対的なピークの積分比を測定し、下記数式でイミド化度(DI)を計算した。この際、100%イミド化が起こる条件である300℃で30分を基準として各吸収強度の比を計算した。
上述のように製造された感光性樹脂組成物をITO基材上に3.0μmの厚さにスピンコートした後、120℃のホットプレートで90秒間予備熱処理することにより、乾燥後の厚さが1.5±0.05μmのコーティング膜を形成した後、磁気分光光度計(UV−3101PC、SHIMADZU)法によって波長550nmでの光透過率を測定した。
上述のように製造された感光性樹脂組成物をITO基材上に3.0μmの厚さにスピンコートした後、120℃のホットプレートで100秒間予備熱処理することにより、乾燥後の厚さが1.5±0.05μmのコーティング膜を形成した。前記基材をフォトマスクを用いて40〜80mJ/cm2-の紫外線に照射した後、2.38%のTMAHアルカリ現像液で60秒間現像し、40秒間水洗した。230℃のホットプレートで1時間加熱して絶縁膜を形成した(最終厚さ1.5μm)。形成された絶縁膜上に金属電極(AI)を2,000Åの厚さに蒸着した(蒸着装備:Thermal Evaporator Model E306)。誘電率はPrecision Impedance Analyzer(Model:4294A、HP)を用いて測定した。
前記製造された有機発光素子の電流流れから、漏れ電流量を漏れ電流測定器(JM Tech社製)を用いて測定した。
前記製造された有機発光素子の輝度を輝度計(Minolta社製)を用いて測定した。
a.ポリイミド樹脂の重合
実施例1と同一の組成でポリイミド樹脂を製造するが、但し、6FDAを完全に溶解させた後、溶液を常温に放置して1時間30分間攪拌した。この際、23℃での溶液粘度が750cpsのポリアミド酸溶液を得た。
実施例1と同一の組成を有する感光性樹脂組成物を用いた絶縁膜の形成および評価は、実施例1と同様の方法で行った。
a.ポリイミド樹脂の重合
実施例1と同一の組成でポリイミド樹脂を製造するが、但し、6FDAを完全に溶解させた後、溶液を常温に放置して50分間攪拌した。この際、23℃での溶液粘度が300cpsのポリアミド酸溶液を得た。
実施例1と同一の組成を有する感光性樹脂組成物を用いた絶縁膜の形成および評価は、実施例1と同様の方法で行った。
a.ポリイミド樹脂の重合
実施例1と同一の組成でポリイミド樹脂を製造するが、但し、FDAを完全に溶解させた後、溶液を常温に放置して2時間攪拌した。この際、23℃での溶液粘度が900cpsのポリアミド酸溶液を得た。
実施例1と同一の組成を有する感光性樹脂組成物を用いた絶縁膜の形成および評価は、実施例1と同様の方法で行った。
ノボラック樹脂(クレゾールホルムアルデヒドノボラック樹脂、メタクレゾール/パラクレゾールの配合比が重量を基準として4:6であり、重量平均分子量8,000のクレゾールノボラック樹脂と重量平均分子量2,000のクレゾールノボラック樹脂が7:3の重量比で混合されたクレゾールノボラック樹脂)12重量%、感光性化合物((1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼン)−1,2−ナフトキノンジアジド−5−スルホネート)6重量%、溶剤(プロピレングリコールモノメチルエーテルアセテート)80重量%、感度増進剤(1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼン)1.5重量%、その他の添加剤としてレベリング剤の用途にシリコン添加剤0.5重量%を添加して2時間攪拌させることにより、感光性樹脂組成物を製造した。
Claims (15)
- アルカリ可溶性樹脂、ジアジド系感光性化合物および感度増進剤を含んでなり、
前記アルカリ可溶性樹脂はイミド化度が50%〜75%の範囲にあるポリイミド樹脂であり、
前記感度増進剤は、2,3,4−トリヒドロキシベンゾフェノン、2,3,4,4’−テトラヒドロキシベンゾフェノンおよび1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼンの中から選ばれた1種以上を含むポジティブ型感光性樹脂組成物。 - 前記ポリイミド樹脂は重量平均分子量(GPC(Gel Permeation Chromatography)測定法に基づく)が40,000〜80,000g/molである請求項1に記載のポジティブ型感光性樹脂組成物。
- 前記ジアジド系感光性化合物は、2,3,4,4’−テトラヒドロキシベンゾフェノン−1,2−ナフトキノンジアジド−5−スルホネート、2,3,4−トリヒドロキシベンゾフェノン−1,2−ナフトキノンジアジド−5−スルホネート、および(1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼン)−1,2−ナフトキノンジアジド−5−スルホネートの中から選ばれた1種以上を含む請求項1又は2に記載のポジティブ型感光性樹脂組成物。
- 前記ポジティブ型感光性樹脂組成物は、1.5±0.05μmの厚みの膜における波長550nmでの光透過率が95%以上である請求項1〜3のいずれか1つに記載のポジティブ型感光性樹脂組成物。
- 前記ポジティブ型感光性樹脂組成物は、1.5±0.05μmの厚みの膜における誘電率が5以下である請求項1〜4のいずれか1つに記載の感光性樹脂組成物。
- 請求項1〜5のいずれか1項に記載のポジティブ型感光性樹脂組成物から形成された絶縁膜。
- 請求項6に記載の絶縁膜を備えた有機発光素子。
- 前記有機発光素子はアクティブマトリクス型有機発光素子である請求項7に記載の有機発光素子。
- アルカリ可溶性樹脂を準備し、
ジアジド系感光性化合物を準備し、
2,3,4−トリヒドロキシベンゾフェノン、2,3,4,4’−テトラヒドロキシベンゾフェノンおよび1−[1−(4−ヒドロキシフェニル)イソプロピル]−4−[1,1−ビス(4−ヒドロキシフェニル)エチル]ベンゼンの中から選ばれた1種以上である感度増進剤を準備し、
これらを混合することを含むポジティブ型感光性樹脂組成物を製造する方法であって、
前記アルカリ可溶性樹脂を、粘度100cps〜700cpsのポリアミド酸溶液をイミド化させ、イミド化度が50%〜75%の範囲のポリイミド樹脂を製造することにより準備することを含むポジティブ型感光性樹脂組成物の製造方法。 - 前記ポリイミド樹脂を、芳香族ジアミンと芳香族ジアンヒドリドとを第1溶媒の存在下で重合してポリアミド酸溶液を製造し、前記ポリアミド酸溶液を化学硬化剤およびイミド化触媒の存在下でイミド化させた後、第2溶媒に投入し、濾過および乾燥させることにより製造する請求項9に記載のポジティブ型感光性樹脂組成物の製造方法。
- 前記芳香族ジアミンは、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)−ヘキサフルオロプロパン(Bis−AP−AF)、2,2−ビス[4−(4−アミノフェノキシ)−フェニル]プロパン(6HMDA)、2,2’−ビス(トリフルオロメチル)−4,4’−ジアミノビフェニル(2,2’−TFDB)、3,3’−ビス(トリフルオロメチル)−4,4’−ジアミノビフェニル(3,3’−TFDB)、4,4’−ビス(3−アミノフェノキシ)ジフェニルスルホン(DBSDA)、ビス(3−アミノフェニル)スルホン(3DDS)、ビス(4−アミノフェニル)スルホン(4DDS)、1,3−ビス(3−アミノフェノキシ)ベンゼン(APB−133)、1,4−ビス(4−アミノフェノキシ)ベンゼン(APB−134)、2,2’−ビス[3−(3−アミノフェノキシ)フェニル]ヘキサフルオロプロパン(3−BDAF)、2,2’−ビス[4(4−アミノフェノキシ)フェニル]ヘキサフルオロプロパン(4−BDAF)およびオキシジアニリン(ODA)の中から選ばれた1種以上を含む請求項10に記載のポジティブ型感光性樹脂組成物の製造方法。
- 前記芳香族ジアンヒドリドは、2,2−ビス(3,4−ジカルボキシフェニル)ヘキサフルオロプロパン二無水物(6FDA)、4−(2,5−ジオキソテトラヒドロフラン−3−イル)−1,2,3,4−テトラヒドロナフタレン−1,2−ジカルボン酸無水物(TDA)、4,4’−(4,4’−イソプロピリデンジフェノキシ)ビス(フタル酸無水物)(HBDA)、3,3’−(4,4’−オキシジフタル酸二無水物)(ODPA)および3,4,3’,4’−ビフェニルテトラカルボン酸二無水物(BPDA)の中から選ばれた1種以上を含む請求項10又は11に記載のポジティブ型感光性樹脂組成物の製造方法。
- 前記第1溶媒は、m−クレゾール、N−メチル−2−ピロリドン(NMP)、ジメチルホルムアミド(DMF)、ジメチルアセトアミド(DMAc)、ジメチルスルホキシド(DMSO)、アセトンおよびジエチルアセテートの中から選ばれた1種以上を含み、前記第2溶媒は、水、アルコール類、エーテル類およびケトン類の中から選ばれた1種以上を含む請求項10〜12のいずれか1つに記載のポジティブ型感光性樹脂組成物の製造方法。
- 前記化学硬化剤は、酢酸無水物(AA)、無水フタル酸(PA)、テトラヒドロ無水フタル酸(THPA)およびメチルテトラヒドロ無水フタル酸(MTHPA)の中から選ばれた1種以上を含む請求項10〜13のいずれか1つに記載のポジティブ型感光性樹脂組成物の製造方法。
- 前記イミド化触媒は、イソキノリン、β−ピコリン、ピリジン、トリエチルアミンおよびジメチルアニリンの中から選ばれた1種以上を含む請求項10〜14のいずれか1つに記載のポジティブ型感光性樹脂組成物の製造方法。
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