JP5910509B2 - 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 - Google Patents
導電性ペースト及び該導電性ペーストを用いた太陽電池素子 Download PDFInfo
- Publication number
- JP5910509B2 JP5910509B2 JP2012552658A JP2012552658A JP5910509B2 JP 5910509 B2 JP5910509 B2 JP 5910509B2 JP 2012552658 A JP2012552658 A JP 2012552658A JP 2012552658 A JP2012552658 A JP 2012552658A JP 5910509 B2 JP5910509 B2 JP 5910509B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive paste
- glass
- solar cell
- layer
- semiconductor silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011521 glass Substances 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 17
- 230000000694 effects Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Sustainable Energy (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011004738 | 2011-01-13 | ||
JP2011004738 | 2011-01-13 | ||
PCT/JP2011/080156 WO2012096128A1 (ja) | 2011-01-13 | 2011-12-27 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012096128A1 JPWO2012096128A1 (ja) | 2014-06-09 |
JP5910509B2 true JP5910509B2 (ja) | 2016-04-27 |
Family
ID=46507039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012552658A Expired - Fee Related JP5910509B2 (ja) | 2011-01-13 | 2011-12-27 | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5910509B2 (zh) |
KR (1) | KR101474677B1 (zh) |
CN (1) | CN103298759B (zh) |
TW (1) | TWI422547B (zh) |
WO (1) | WO2012096128A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6825948B2 (ja) * | 2017-03-17 | 2021-02-03 | 東洋アルミニウム株式会社 | 太陽電池用ペースト組成物 |
CN107673601B (zh) * | 2017-08-28 | 2019-10-18 | 广州市儒兴科技开发有限公司 | 一种perc铝浆用玻璃粉及其制备方法 |
CN110550864B (zh) * | 2019-09-29 | 2022-09-02 | 长沙新材料产业研究院有限公司 | 一种低膨胀系数绝缘介质浆料及其制备方法 |
CN115895332B (zh) * | 2022-12-29 | 2024-02-02 | 湖南松井新材料股份有限公司 | 一种爽滑性低黑度玻璃高温油墨及其制备方法和应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001163635A (ja) * | 1999-12-06 | 2001-06-19 | Asahi Glass Co Ltd | 隔壁形成用無鉛低融点ガラスおよびガラスセラミックス組成物 |
JP2002326839A (ja) * | 2001-02-28 | 2002-11-12 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用隔壁形成材料及びガラス組成物 |
JP2007070196A (ja) * | 2005-09-09 | 2007-03-22 | Central Glass Co Ltd | 無鉛低融点ガラス |
JP2009120472A (ja) * | 2007-10-24 | 2009-06-04 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用誘電体材料 |
JP2010184852A (ja) * | 2009-01-16 | 2010-08-26 | Hitachi Powdered Metals Co Ltd | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60318517T2 (de) * | 2002-04-24 | 2009-07-23 | Central Glass Co., Ltd., Ube | Bleifreies niedrigschmelzendes Glas |
CN100524834C (zh) * | 2005-06-07 | 2009-08-05 | E.I.内穆尔杜邦公司 | 铝厚膜组合物、电极、半导体器件及其制造方法 |
CN101395723A (zh) * | 2006-03-07 | 2009-03-25 | 株式会社村田制作所 | 导电性糊及太阳电池 |
-
2011
- 2011-12-27 WO PCT/JP2011/080156 patent/WO2012096128A1/ja active Application Filing
- 2011-12-27 KR KR1020137018765A patent/KR101474677B1/ko active IP Right Grant
- 2011-12-27 CN CN201180064818.4A patent/CN103298759B/zh not_active Expired - Fee Related
- 2011-12-27 JP JP2012552658A patent/JP5910509B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-03 TW TW101100208A patent/TWI422547B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001163635A (ja) * | 1999-12-06 | 2001-06-19 | Asahi Glass Co Ltd | 隔壁形成用無鉛低融点ガラスおよびガラスセラミックス組成物 |
JP2002326839A (ja) * | 2001-02-28 | 2002-11-12 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用隔壁形成材料及びガラス組成物 |
JP2007070196A (ja) * | 2005-09-09 | 2007-03-22 | Central Glass Co Ltd | 無鉛低融点ガラス |
JP2009120472A (ja) * | 2007-10-24 | 2009-06-04 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用誘電体材料 |
JP2010184852A (ja) * | 2009-01-16 | 2010-08-26 | Hitachi Powdered Metals Co Ltd | 低融点ガラス組成物、それを用いた低温封着材料及び電子部品 |
Also Published As
Publication number | Publication date |
---|---|
WO2012096128A1 (ja) | 2012-07-19 |
JPWO2012096128A1 (ja) | 2014-06-09 |
KR101474677B1 (ko) | 2014-12-18 |
TW201231430A (en) | 2012-08-01 |
TWI422547B (zh) | 2014-01-11 |
CN103298759B (zh) | 2016-05-11 |
KR20130100369A (ko) | 2013-09-10 |
CN103298759A (zh) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5609319B2 (ja) | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 | |
JP5888493B2 (ja) | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 | |
JP5272373B2 (ja) | 多結晶Si太陽電池 | |
JP2011526579A (ja) | 光起電力電池用導体に用いるガラス組成物 | |
JP2011521018A (ja) | アルミニウムペーストおよびシリコン太陽電池の製造におけるその使用 | |
JP5569094B2 (ja) | 低融点ガラス組成物及びそれを用いた導電性ペースト材料 | |
TW201139316A (en) | Lead-free low-melting-point glass paste for insulation coating | |
JP5910509B2 (ja) | 導電性ペースト及び該導電性ペーストを用いた太陽電池素子 | |
JP2013189372A (ja) | 導電性ペースト材料 | |
JP2011035035A (ja) | 太陽電池電極用導電性組成物 | |
JP2012074656A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 | |
KR20170051380A (ko) | 태양전지용 전극 페이스트 및 이를 사용하여 제조된 태양전지 | |
JP2012074652A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 | |
JP2012074654A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 | |
JP2010238958A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 | |
JP2012074655A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 | |
JP2012074653A (ja) | 導電性組成物及びそれを用いた太陽電池の製造方法並びに太陽電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140926 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151006 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160301 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160314 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5910509 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |