JP5895826B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP5895826B2 JP5895826B2 JP2012257592A JP2012257592A JP5895826B2 JP 5895826 B2 JP5895826 B2 JP 5895826B2 JP 2012257592 A JP2012257592 A JP 2012257592A JP 2012257592 A JP2012257592 A JP 2012257592A JP 5895826 B2 JP5895826 B2 JP 5895826B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor module
- positive electrode
- package
- negative electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 238000003860 storage Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Description
Claims (5)
- 半導体素子が樹脂によって封止されたパッケージと、
前記パッケージを挟んで対向して配置され、前記半導体素子と電気的に接続された正電極及び負電極と、を備え、
前記正電極には、前記負電極側へ張出す正電極張出部が平面視において前記半導体素子よりも外側に形成され、
前記負電極には、前記正電極張出部と対向し、前記正電極側へ張出す負電極張出部が平面視において前記半導体素子よりも外側に形成され、
前記正電極張出部と前記負電極張出部との間は、その領域に樹脂が介在することにより、電荷を蓄積可能な蓄電部が形成されていることを特徴とする半導体モジュール。 - 前記蓄電部には、前記パッケージの樹脂材料と異なる樹脂材料が充填されている請求項1に記載の半導体モジュール。
- 前記蓄電部には、高誘電材料が充填されている請求項1又は2に記載の半導体モジュール。
- 前記正電極張出部及び前記負電極張出部は、前記パッケージを囲んで全周に設けられている請求項1〜3の何れか一項に記載の半導体モジュール。
- 前記正電極張出部と前記負電極張出部との間隔が1mm以下である請求項1〜4の何れか一項に記載の半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012257592A JP5895826B2 (ja) | 2012-11-26 | 2012-11-26 | 半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012257592A JP5895826B2 (ja) | 2012-11-26 | 2012-11-26 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014107341A JP2014107341A (ja) | 2014-06-09 |
JP5895826B2 true JP5895826B2 (ja) | 2016-03-30 |
Family
ID=51028594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012257592A Expired - Fee Related JP5895826B2 (ja) | 2012-11-26 | 2012-11-26 | 半導体モジュール |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5895826B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9681568B1 (en) * | 2015-12-02 | 2017-06-13 | Ge Energy Power Conversion Technology Ltd | Compact stacked power modules for minimizing commutating inductance and methods for making the same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4075734B2 (ja) * | 2003-08-21 | 2008-04-16 | 株式会社デンソー | 半導体装置の実装構造 |
JP4409380B2 (ja) * | 2004-07-22 | 2010-02-03 | 本田技研工業株式会社 | 電子回路装置 |
US7514780B2 (en) * | 2006-03-15 | 2009-04-07 | Hitachi, Ltd. | Power semiconductor device |
JP5029078B2 (ja) * | 2006-03-15 | 2012-09-19 | 株式会社日立製作所 | 電力用半導体装置 |
JP5253430B2 (ja) * | 2009-03-23 | 2013-07-31 | 株式会社豊田中央研究所 | パワーモジュール |
JP5581724B2 (ja) * | 2010-02-22 | 2014-09-03 | ダイキン工業株式会社 | 電力変換装置 |
JP5629485B2 (ja) * | 2010-04-09 | 2014-11-19 | トヨタ自動車株式会社 | 電力変換装置 |
-
2012
- 2012-11-26 JP JP2012257592A patent/JP5895826B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2014107341A (ja) | 2014-06-09 |
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