JP5884030B2 - 光電変換装置の製造方法 - Google Patents
光電変換装置の製造方法 Download PDFInfo
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- JP5884030B2 JP5884030B2 JP2013507340A JP2013507340A JP5884030B2 JP 5884030 B2 JP5884030 B2 JP 5884030B2 JP 2013507340 A JP2013507340 A JP 2013507340A JP 2013507340 A JP2013507340 A JP 2013507340A JP 5884030 B2 JP5884030 B2 JP 5884030B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 58
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 330
- 229910021417 amorphous silicon Inorganic materials 0.000 description 50
- 239000010408 film Substances 0.000 description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 14
- 239000007864 aqueous solution Substances 0.000 description 11
- 238000007747 plating Methods 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 and for example Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下の実施形態は、単なる例示である。本発明は、以下の実施形態に限定されない。また、実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された物体の寸法比率などは、現実の物体の寸法比率などとは異なる場合がある。具体的な物体の寸法比率等は、以下の説明を参酌して判断されるべきである。
なお、図3〜図6は、光電変換部20の製造工程を示す図である。図7〜図13は、n側電極40及びp側電極50の形成工程を示す図である。
以下では、各電極の第2導電層44,54をシード層として、電解めっきにより、各電極の第3導電層45,55及び第4導電層46,56を形成する工程を説明する。
Claims (4)
- 半導体基板の一方の面上に、p型領域及びn型領域をそれぞれ形成する工程と、
複数の導電層をそれぞれ含むp側電極及びn側電極の形成工程であり、前記p型領域上に前記p側電極を、前記n型領域上に前記n側電極をそれぞれ形成する電極形成工程と、
を有し、
前記電極形成工程は、
前記p型領域上及び前記n型領域上に、透明導電層である第1導電層を形成する第1工程と、
前記p型領域を覆う前記第1導電層上に第1のp側金属層を、前記n型領域を覆う前記第1導電層上に前記第1のp側金属層と分離された第1のn側金属層をそれぞれ形成する第2工程と、
前記第1のp側金属層及び前記第1のn側金属層をマスクとして、前記第1導電層を部分的にエッチングする第3工程と、
前記第3工程の終了後に、前記第1のp側金属層及び前記第1のn側金属層に電流を流す電解めっきにより、前記第1のp側金属層及び前記第1のn側金属層上にそれぞれ第2のp側金属層及び第2のn側金属層を形成する第4工程と、
を含む光電変換装置の製造方法。 - 請求項1に記載の光電変換装置の製造方法であって、
前記第2工程では、前記第1導電層上を覆う第1の金属層を形成し、前記第1の金属層を部分的にエッチングして、前記第1のp側金属層と前記第1のn側金属層を形成する光電変換装置の製造方法。 - 請求項1に記載の光電変換装置の製造方法において、
前記第2工程では、印刷法又はマスク蒸着法により、前記第1のp側金属層及び前記第1のn側金属層をそれぞれ形成する光電変換装置の製造方法。 - 請求項1〜3のいずれか1に記載の光電変換装置の製造方法において、
前記半導体基板は、結晶系半導体基板であり、
前記p型領域及び前記n型領域は、それぞれp型非晶質半導体及びn型非晶質半導体により形成される光電変換装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013507340A JP5884030B2 (ja) | 2011-03-25 | 2012-03-09 | 光電変換装置の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011068313 | 2011-03-25 | ||
JP2011068313 | 2011-03-25 | ||
PCT/JP2012/056120 WO2012132838A1 (ja) | 2011-03-25 | 2012-03-09 | 光電変換装置の製造方法 |
JP2013507340A JP5884030B2 (ja) | 2011-03-25 | 2012-03-09 | 光電変換装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012132838A1 JPWO2012132838A1 (ja) | 2014-07-28 |
JP5884030B2 true JP5884030B2 (ja) | 2016-03-15 |
Family
ID=46930577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013507340A Expired - Fee Related JP5884030B2 (ja) | 2011-03-25 | 2012-03-09 | 光電変換装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140024168A1 (ja) |
EP (1) | EP2690667A4 (ja) |
JP (1) | JP5884030B2 (ja) |
WO (1) | WO2012132838A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013141232A1 (ja) * | 2012-03-23 | 2013-09-26 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
JP6104037B2 (ja) * | 2013-05-02 | 2017-03-29 | 三菱電機株式会社 | 光起電力装置およびその製造方法、光起電力モジュール |
JP6418558B2 (ja) * | 2014-02-06 | 2018-11-07 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP6678510B2 (ja) * | 2016-05-11 | 2020-04-08 | 古河電気工業株式会社 | 光導波路素子 |
JP7073341B2 (ja) | 2017-03-29 | 2022-05-23 | 株式会社カネカ | 光起電装置及び光起電装置の製造方法 |
CN109273558B (zh) * | 2018-08-27 | 2020-08-11 | 横店集团东磁股份有限公司 | 一种高转换效率的链式湿法黑硅电池片的制备方法 |
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JP2008529265A (ja) * | 2005-01-20 | 2008-07-31 | コミツサリア タ レネルジー アトミーク | へテロ接合およびインターフィンガ構造を有する半導体デバイス |
JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
Family Cites Families (10)
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TW515104B (en) * | 2000-11-06 | 2002-12-21 | Semiconductor Energy Lab | Electro-optical device and method of manufacturing the same |
US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
JP2010258043A (ja) * | 2009-04-21 | 2010-11-11 | Sanyo Electric Co Ltd | 太陽電池 |
CN102044579B (zh) * | 2009-09-07 | 2013-12-18 | Lg电子株式会社 | 太阳能电池 |
JP5485060B2 (ja) * | 2010-07-28 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP5485062B2 (ja) * | 2010-07-30 | 2014-05-07 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
JP2013219065A (ja) * | 2010-08-06 | 2013-10-24 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
JP5388970B2 (ja) * | 2010-08-24 | 2014-01-15 | 三洋電機株式会社 | 太陽電池の製造方法 |
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2012
- 2012-03-09 WO PCT/JP2012/056120 patent/WO2012132838A1/ja active Application Filing
- 2012-03-09 JP JP2013507340A patent/JP5884030B2/ja not_active Expired - Fee Related
- 2012-03-09 EP EP12764781.6A patent/EP2690667A4/en not_active Withdrawn
-
2013
- 2013-09-25 US US14/036,757 patent/US20140024168A1/en not_active Abandoned
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JPH01112613A (ja) * | 1987-10-26 | 1989-05-01 | Hoya Corp | 透明導電膜パターンの形成方法 |
JPH06151913A (ja) * | 1992-11-16 | 1994-05-31 | Canon Inc | 電極形成法 |
JP2008517451A (ja) * | 2004-10-14 | 2008-05-22 | インスティトゥート フューア ゾラールエネルギーフォルシュング ゲーエムベーハー | 背面接触式太陽電池上の導電層の接触分離の方法および太陽電池 |
JP2008529265A (ja) * | 2005-01-20 | 2008-07-31 | コミツサリア タ レネルジー アトミーク | へテロ接合およびインターフィンガ構造を有する半導体デバイス |
JP2009200267A (ja) * | 2008-02-21 | 2009-09-03 | Sanyo Electric Co Ltd | 太陽電池 |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
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EP2690667A1 (en) | 2014-01-29 |
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