JP5883771B2 - 圧力センサ - Google Patents
圧力センサ Download PDFInfo
- Publication number
- JP5883771B2 JP5883771B2 JP2012257034A JP2012257034A JP5883771B2 JP 5883771 B2 JP5883771 B2 JP 5883771B2 JP 2012257034 A JP2012257034 A JP 2012257034A JP 2012257034 A JP2012257034 A JP 2012257034A JP 5883771 B2 JP5883771 B2 JP 5883771B2
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- JP
- Japan
- Prior art keywords
- diaphragm
- stress
- sensor
- sensor chip
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000035882 stress Effects 0.000 description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 238000009826 distribution Methods 0.000 description 17
- 238000004458 analytical method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 230000008646 thermal stress Effects 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- 229910001220 stainless steel Inorganic materials 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 241000219122 Cucurbita Species 0.000 description 3
- 235000009852 Cucurbita pepo Nutrition 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004881 precipitation hardening Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002436 steel type Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
- G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Description
図2のブリッジ回路で得られる電圧変化率 Vout/Vccは以下になる。
抵抗変化△R1および△R3は以下のように求められる。第1および第2歪ゲージに発生する応力で、X方向の応力成分をσx、Y方向の応力成分をσyとすると、抵抗変化△R1は、歪ゲージの縦ピエゾ抵抗係数をπl、横ピエゾ抵抗係数をπtとして、
と表される。一方、第3および第4歪ゲージにも同じ応力が発生するが、ゲージがY方向に沿って配置されているため、電流方向の応力がσy、それに垂直な方向の応力成分がσxとなり、抵抗変化△R3は
と表わされる。なお、Z方向の応力はほぼゼロになるため無視した。図8の従来の圧力センサにおいても、対称性があるため、第3および第4歪ゲージは、第1および第2歪ゲージと同じ場所でY方向に沿って配置されているのと等価であり(5)式が成り立つ。
(3)式で、抵抗変化は初期抵抗に対して十分小さい(2R0<<△R1+△R3)として、式(4)(5)を代入すると、以下になる。
なお、p型シリコン<110>方向ではπlとπtは符号が反対でほぼ同程度の値となるので、
である。以上より、圧力センサの出力変化率、すなわち感度は、歪ゲージに働くX方向とY方向の応力差σx-σyに比例する。
2 ダイアフラム
3 センサ筐体
4 センサチップ
5 接合層
6 ゲージ領域
7 歪ゲージ
10 X中心線
11 ダイアフラム中央寸法
12 ダイアフラム端部寸法
13 シリコン基板
14 センサダイアフラム
21 圧力センサアセンブリ
22 円筒部
23 フランジ部
24 ねじ部
25 圧力導入口
26 配線基板
27 接着剤
28 ワイヤ
29 カバー
30 外部電極ピン
31 フレキシブル配線板
40 従来の圧力センサ
Claims (3)
- 長手と短手を有する形状のダイアフラムを有する金属製の筐体と、
前記金属製の筐体上に設けられ、4つの歪ゲージを有するセンサチップと、を有し、
前記4つの歪ゲージは前記センサチップの中央部に設けられており、前記4つの歪ゲージのうち2つが第一の方向に沿って配置されており、残りの2つが第一の方向とは垂直な第二の方向に沿って配置されており、
前記第一の方向と前記ダイアフラムの長手方向が沿い、かつ、前記4つの歪ゲージがダイアフラムの中央部に位置するように前記センサチップは前記筐体上に設けられており、
前記センサチップの第一の方向に沿う辺は、前記ダイアフラムの長手方向の長さよりも短く、前記センサチップの第二の方向に沿う辺は、前記ダイアフラムの中央付近における短手方向の長さよりも長いことを特徴とする圧力センサ。 - 前記ダイアフラムは、長手方向におけるダイアフラムの中央と端部の間における短手方向の最大寸法が、長手方向中央付近における短手方向の寸法よりも大きい形状であることを特徴とする請求項1に記載の圧力センサ。
- 前記4つの歪ゲージは、それぞれが<110>結晶方位に沿って形成されるp型単結晶シリコンであることを特徴とする請求項1または2に記載の圧力センサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012257034A JP5883771B2 (ja) | 2012-11-26 | 2012-11-26 | 圧力センサ |
PCT/JP2013/079950 WO2014080759A1 (ja) | 2012-11-26 | 2013-11-06 | 圧力センサ |
EP13857220.1A EP2924408B1 (en) | 2012-11-26 | 2013-11-06 | Pressure sensor |
US14/647,351 US9835508B2 (en) | 2012-11-26 | 2013-11-06 | Pressure sensor having strain gauges disposed on a diaphragm |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012257034A JP5883771B2 (ja) | 2012-11-26 | 2012-11-26 | 圧力センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014106013A JP2014106013A (ja) | 2014-06-09 |
JP5883771B2 true JP5883771B2 (ja) | 2016-03-15 |
Family
ID=50775944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012257034A Active JP5883771B2 (ja) | 2012-11-26 | 2012-11-26 | 圧力センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US9835508B2 (ja) |
EP (1) | EP2924408B1 (ja) |
JP (1) | JP5883771B2 (ja) |
WO (1) | WO2014080759A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7088067B2 (ja) | 2019-02-15 | 2022-06-21 | Tdk株式会社 | 圧力センサ |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5975970B2 (ja) * | 2013-11-20 | 2016-08-23 | 日立オートモティブシステムズ株式会社 | 圧力センサ |
JP6248009B2 (ja) * | 2014-07-31 | 2017-12-13 | 日立オートモティブシステムズ株式会社 | 圧力センサ |
JP6208098B2 (ja) * | 2014-08-29 | 2017-10-04 | 日立オートモティブシステムズ株式会社 | 半導体素子接続ユニットおよびそれを備えた力学量測定装置 |
US9714876B2 (en) * | 2015-03-26 | 2017-07-25 | Sensata Technologies, Inc. | Semiconductor strain gauge |
JP2017067463A (ja) * | 2015-09-28 | 2017-04-06 | セイコーエプソン株式会社 | 圧力センサー、高度計、電子機器および移動体 |
CN107290099B (zh) | 2016-04-11 | 2021-06-08 | 森萨塔科技公司 | 压力传感器、用于压力传感器的插塞件和制造插塞件的方法 |
EP3236226B1 (en) | 2016-04-20 | 2019-07-24 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
US10557770B2 (en) * | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
CN111122026A (zh) * | 2018-11-01 | 2020-05-08 | 中科院微电子研究所昆山分所 | 一种压力传感器 |
JP2021071305A (ja) * | 2019-10-29 | 2021-05-06 | ミネベアミツミ株式会社 | 力覚センサ装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2841312C2 (de) * | 1978-09-22 | 1985-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung |
JPH01211986A (ja) * | 1988-02-19 | 1989-08-25 | Matsushita Electric Ind Co Ltd | 半導体圧力センサ |
JP2615887B2 (ja) | 1988-07-29 | 1997-06-04 | 株式会社デンソー | 半導体圧力センサ |
US5289721A (en) * | 1990-09-10 | 1994-03-01 | Nippondenso Co., Ltd. | Semiconductor pressure sensor |
JPH08247872A (ja) * | 1995-03-10 | 1996-09-27 | Yazaki Corp | ピエゾ型圧力センサ |
JPH098329A (ja) * | 1995-06-26 | 1997-01-10 | Tokai Rika Co Ltd | 圧力センサ |
JP4161410B2 (ja) * | 1997-07-25 | 2008-10-08 | 株式会社デンソー | 圧力検出装置 |
JP2006003100A (ja) * | 2004-06-15 | 2006-01-05 | Canon Inc | ピエゾ抵抗型圧力センサ |
-
2012
- 2012-11-26 JP JP2012257034A patent/JP5883771B2/ja active Active
-
2013
- 2013-11-06 US US14/647,351 patent/US9835508B2/en active Active
- 2013-11-06 EP EP13857220.1A patent/EP2924408B1/en active Active
- 2013-11-06 WO PCT/JP2013/079950 patent/WO2014080759A1/ja active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7088067B2 (ja) | 2019-02-15 | 2022-06-21 | Tdk株式会社 | 圧力センサ |
Also Published As
Publication number | Publication date |
---|---|
JP2014106013A (ja) | 2014-06-09 |
EP2924408B1 (en) | 2018-01-10 |
EP2924408A4 (en) | 2016-07-27 |
US9835508B2 (en) | 2017-12-05 |
US20160025581A1 (en) | 2016-01-28 |
EP2924408A1 (en) | 2015-09-30 |
WO2014080759A1 (ja) | 2014-05-30 |
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