JP5849086B2 - 多層膜を加工する方法 - Google Patents
多層膜を加工する方法 Download PDFInfo
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- JP5849086B2 JP5849086B2 JP2013502579A JP2013502579A JP5849086B2 JP 5849086 B2 JP5849086 B2 JP 5849086B2 JP 2013502579 A JP2013502579 A JP 2013502579A JP 2013502579 A JP2013502579 A JP 2013502579A JP 5849086 B2 JP5849086 B2 JP 5849086B2
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
Claims (10)
- 多層膜(10)の処理方法であって、当該方法が、
基材膜第1面(11)と基材膜第2面(13)とを有する基材膜(12)であって透明で可撓性の基材膜(12)を用意する段階(102)と、
基材膜第2面(13)の上に、基材膜(12)と遮蔽層(14)の外面とを流体連通する1以上の開口(15)を有する遮蔽層(14)を堆積又はコーティングする段階(104)と、
基材膜第1面(11)を第1の反応体(16)に暴露する段階(106)と、
遮蔽層(14)の外面を第2の反応体(18)に暴露して、第2の反応体(18)を第1の反応体(16)と反応させる段階(108)と
を含んでおり、基材膜第1面(11)を第1の反応体(16)に暴露する段階(106)と、遮蔽層(14)の外面を第2の反応体(18)に暴露する段階(108)とが、基材膜(12)のガラス転移温度を超える温度において第1の反応体(16)と第2の反応体(18)との反応によって反応層が形成される条件下で実施される、方法。 - 反応層の形成によって遮蔽層(14)中の開口(15)が塞がれる、請求項1記載の方法。
- 基材膜(12)が熱可塑性材料を含んでおり、遮蔽層材料が金属、ニトリド、有機材料、無機材料及びセラミック材料からなる群から選択される、請求項1又は請求項2記載の方法。
- 基材膜第1面(11)を第1の反応体(16)に暴露する段階(106)と、遮蔽層(14)の外面を第2の反応体(18)に暴露する段階(108)とが同時に実施される、請求項1乃至請求項3のいずれか1項記載の方法。
- 第1の反応体(16)が水、硫黄、セレン、テルル、酸素、アルコール、アンモニア、又は非金属ヒドリドもしくはスルフィドからなる群から選択される、請求項1乃至請求項4のいずれか1項記載の方法。
- 第2の反応体(18)が金属ハライド、金属アルキル化合物、金属アルコキシド、オルトシリケート、金属β−ジケトナト化合物、金属シクロペンタジエニル化合物、金属カルボキシレート、金属カルボニル、金属ヒドリド、金属アルキルアミドもしくはシリルアミド、又はバイメタル化合物、又はこれらの組合せからなる群から選択される、請求項1乃至請求項5のいずれか1項記載の方法。
- 基材膜(12)及び遮蔽層(14)に第1の反応体(16)を接着させるために有機金属化合物を添加することを含む、請求項1乃至請求項6のいずれか1項記載の方法。
- 超音波システム、プラズマ源及び紫外線放射源からなる群から選択される供給源による反応のための追加のエネルギーを用意することを含む、請求項1乃至請求項7のいずれか1項記載の方法。
- ポリマー基材膜(12)上に反応層を形成する方法であって、当該方法が、
第1の外面(11)と第2の外面(13)とを有するポリマー基材膜(12)を用意する段階(202)と、
第1の外面(11)を第1の反応体(16)に暴露する段階(204)と、
ポリマー基材膜(12)の第2の外面(13)を第2の反応体(18)に暴露して、第2の反応体(18)を第1の反応体(16)と反応させて反応層を形成する段階(206)と
を含んでおり、ポリマー基材膜(12)が第1の反応体(16)に対して透過性であってポリマー基材膜(12)の第2の外面(13)で第1の反応体(16)と第2の反応体(18)とを反応させることができ、該反応が、ポリマー基材膜(12)のガラス転移温度を超える温度において実施される、方法。 - ポリマー基材膜(12)に隣接した複数の遮蔽層(14)を用意することをさらに含む、請求項9記載の方法。
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US12/751,734 US8512809B2 (en) | 2010-03-31 | 2010-03-31 | Method of processing multilayer film |
US12/751,734 | 2010-03-31 | ||
PCT/US2011/025792 WO2011123200A1 (en) | 2010-03-31 | 2011-02-23 | Method of processing multilayer film |
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JP2013523493A JP2013523493A (ja) | 2013-06-17 |
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EP (1) | EP2553139B1 (ja) |
JP (1) | JP5849086B2 (ja) |
KR (1) | KR101782667B1 (ja) |
CN (1) | CN102892920B (ja) |
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CN102185109A (zh) * | 2011-04-06 | 2011-09-14 | 中国科学院微电子研究所 | 一种有机多层薄膜的制备方法 |
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KR20140136594A (ko) * | 2013-05-20 | 2014-12-01 | 삼성전자주식회사 | 배기 장치 및 이를 구비하는 박막 증착 설비 |
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WO2011123200A1 (en) | 2011-10-06 |
EP2553139A1 (en) | 2013-02-06 |
KR101782667B1 (ko) | 2017-09-27 |
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US20110244141A1 (en) | 2011-10-06 |
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