JP5841600B2 - Ledへの分路層の配置 - Google Patents
Ledへの分路層の配置 Download PDFInfo
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- JP5841600B2 JP5841600B2 JP2013523683A JP2013523683A JP5841600B2 JP 5841600 B2 JP5841600 B2 JP 5841600B2 JP 2013523683 A JP2013523683 A JP 2013523683A JP 2013523683 A JP2013523683 A JP 2013523683A JP 5841600 B2 JP5841600 B2 JP 5841600B2
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- 239000002184 metal Substances 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 14
- 238000000605 extraction Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- 238000005253 cladding Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002788 crimping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
のように増大することを示す。一方、2 Ltよりも大きな接触幅に対しては、
が1に近づくので接触抵抗は
へと近づく。
− (例えば接点の分布の制御による)半導体の活性層への均一な電流の注入
− (例えば薄い金属の接続部の使用による)分路層間の電圧降下の最小化
− (例えば接点のサイズを最適化してミラーを形成することによる)光の抽出量の最大化
− (例えばミラーのサイズの最適化による)活性領域の最大化
Claims (18)
- 発光ダイオード(LED)のデバイスであって、
- LEDチップであって、成長基板上にエピタキシャルに成長させられ且つ前記LEDチップの略全体に延在する発光半導体層を有する、電流伝播層を有する上面をもつLEDチップと、
- 前記LEDを励起するために当該LED中を流れる電流を管理するための、前記上面の一部のみにある金属の電極パターンと、
を有し、当該電極パターンは、
- 前記上面の上にある複数の金属接点であって、同接点の転送長Ltの約2倍乃至10倍の幅を同接点がもち、当該転送長Ltは、
で規定され、
ここでRsはΩ/□で表された電流伝播層のシート抵抗値であり、ρcは接点及び電流伝播層のインタフェース部分のΩ・m2にて表された接触抵抗値であり、前記発光半導体層により発せられる光を略遮断する金属接点と、
- 複数の前記接点を一緒に接続していて、2Lt未満の幅をもつ金属の接続部と、
を有することを特徴とする、発光ダイオードのデバイス。 - 前記上面にある複数の前記金属接点が、当該接点の前記転送長Ltの約2倍乃至5倍の幅を有することを特徴とする、請求項1に記載のデバイス。
- 前記接点の総面積が前記LEDチップの発光面の2%未満であることを特徴とする、請求項1に記載のデバイス。
- 前記接点の総面積が前記LEDチップの発光面の5%未満であることを特徴とする、請求項1に記載のデバイス。
- 前記接点の総面積が前記LEDチップの発光面の10%未満であることを特徴とする、請求項1に記載のデバイス。
- 前記接点が実質的に円形であり、且つ前記幅が当該接点の直径であることを特徴とする、請求項1に記載のデバイス。
- 前記接点が多角形であることを特徴とする、請求項1に記載のデバイス。
- 前記金属の接続部のうちの少なくとも一つによって前記接点と接続しているワイヤ接合された電極を更に有することを特徴とする、請求項1に記載のデバイス。
- 前記金属の接続部が、平行且つ直交する当該接続部のグリッドを形成することを特徴とする、請求項8に記載のデバイス。
- 前記金属の接続部が、前記ワイヤ接合された電極から放射状に延在することを特徴とする、請求項8に記載のデバイス。
- 少なくとも複数の接点の大きさが、当該接点が前記ワイヤ接合された電極から遠ざかるにつれて増すことを特徴とする、請求項8に記載のデバイス。
- 前記接点の密度が、当該接点が前記ワイヤ接合された電極から遠ざかるにつれて増すことを特徴とする、請求項8に記載のデバイス。
- 前記ワイヤ接合された電極と前記電流伝播層との間の電流密度を減じるために、当該ワイヤ接合された電極と当該電流伝播層との間に誘電層を更に有することを特徴とする、請求項8に記載のデバイス。
- 前記ワイヤ接合された電極が、前記誘電層の周囲において距離Wxだけ当該誘電層の縁を超えて延在し、Wxが0.5Lt<Wx<1Ltであることを特徴とする、請求項13に記載のデバイス。
- 前記ワイヤ接合された電極の周辺部の下及び同電極の周囲の電流のむらを減じるために、前記ワイヤ接合された電極を特定の距離で囲む同心状の分路リングを更に有し、当該分路リングと前記ワイヤ接合された電極との間には金属接触がないことを特徴とする、請求項8に記載のデバイス。
- 前記分路リングの幅が0.1Ltと1Ltとの間にあることを特徴とし、当該分路リングの直径が前記ワイヤ接合された電極の直径よりも少なくとも20%大きいことを特徴とする、請求項15に記載のデバイス。
- 前記LEDチップ上面の周囲に金属の分路を有し、当該分路は同チップの縁に沿って第1の幅をもち、同チップの角部では同チップの当該角部での電流密度を減じるために、当該分路はより狭い幅を更にもつことを特徴とする、請求項1に記載のデバイス。
- 前記チップの縁に沿った前記分路の前記第1の幅が1Ltよりも大きく、前記チップの角部での電流密度を減じるために、当該チップの角部にある前記分路のより狭い幅が0.1Lt未満であることを特徴とする、請求項17に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37194410P | 2010-08-10 | 2010-08-10 | |
US61/371,944 | 2010-08-10 | ||
PCT/IB2011/053304 WO2012020346A1 (en) | 2010-08-10 | 2011-07-25 | Shunting layer arrangement for leds |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013533643A JP2013533643A (ja) | 2013-08-22 |
JP2013533643A5 JP2013533643A5 (ja) | 2014-08-28 |
JP5841600B2 true JP5841600B2 (ja) | 2016-01-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013523683A Active JP5841600B2 (ja) | 2010-08-10 | 2011-07-25 | Ledへの分路層の配置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8975658B2 (ja) |
EP (1) | EP2603936B1 (ja) |
JP (1) | JP5841600B2 (ja) |
CN (1) | CN103201859B (ja) |
RU (1) | RU2566403C2 (ja) |
WO (1) | WO2012020346A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011111919B4 (de) * | 2011-08-30 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
JPWO2013136684A1 (ja) * | 2012-03-13 | 2015-08-03 | パナソニックIpマネジメント株式会社 | 有機エレクトロルミネッセンス素子 |
CN105609596A (zh) * | 2015-09-11 | 2016-05-25 | 映瑞光电科技(上海)有限公司 | 具有电流阻挡结构的led垂直芯片及其制备方法 |
CN105322068B (zh) * | 2015-11-17 | 2017-12-26 | 天津三安光电有限公司 | 发光二极管芯片及其制作方法 |
CN106972090A (zh) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | 一种弧线形n电极及垂直结构led芯片 |
KR102345618B1 (ko) | 2017-09-01 | 2021-12-31 | 삼성전자주식회사 | 발광 다이오드 및 그의 제조 방법 |
TWI640075B (zh) * | 2017-10-31 | 2018-11-01 | 友達光電股份有限公司 | 像素發光裝置 |
US11196230B2 (en) * | 2017-12-27 | 2021-12-07 | Lumentum Operations Llc | Impedance compensation along a channel of emitters |
DE102018127201A1 (de) * | 2018-10-31 | 2020-04-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips |
US20210074880A1 (en) * | 2018-12-18 | 2021-03-11 | Bolb Inc. | Light-output-power self-awareness light-emitting device |
TW202209706A (zh) * | 2020-08-19 | 2022-03-01 | 晶元光電股份有限公司 | 化合物半導體元件及化合物半導體裝置 |
CN112002789B (zh) * | 2020-10-30 | 2021-01-15 | 华引芯(武汉)科技有限公司 | 一种大功率发光芯片及其制作方法 |
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JP3260358B2 (ja) * | 1990-08-20 | 2002-02-25 | 株式会社東芝 | 半導体発光装置 |
EP0969517B1 (en) * | 1998-07-04 | 2005-10-12 | International Business Machines Corporation | Electrode for use in electro-optical devices |
US7193245B2 (en) | 2003-09-04 | 2007-03-20 | Lumei Optoelectronics Corporation | High power, high luminous flux light emitting diode and method of making same |
JP2004047504A (ja) * | 2002-07-08 | 2004-02-12 | Korai Kagi Kofun Yugenkoshi | 発光効率を高めた発光ダイオード |
JP2004047662A (ja) * | 2002-07-11 | 2004-02-12 | Rohm Co Ltd | 半導体発光素子 |
JP2005019695A (ja) * | 2003-06-26 | 2005-01-20 | Toshiba Corp | 半導体発光装置 |
JP2006120927A (ja) * | 2004-10-22 | 2006-05-11 | Sharp Corp | 発光ダイオード及びその製造方法 |
KR101344512B1 (ko) * | 2004-11-01 | 2013-12-23 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 매우 낮은 직렬-저항 및 개선된 히트 싱킹을 가진 발광 소자 제조용의 상호 맞물린 멀티-픽셀 어레이 |
DE102005025416A1 (de) * | 2005-06-02 | 2006-12-14 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip mit einer Kontaktstruktur |
TWI331816B (en) * | 2007-04-03 | 2010-10-11 | Advanced Optoelectronic Tech | Semiconductor light-emitting device |
FI121902B (fi) * | 2007-06-20 | 2011-05-31 | Optogan Oy | Valoa säteilevä diodi |
JP4985260B2 (ja) * | 2007-09-18 | 2012-07-25 | 日立電線株式会社 | 発光装置 |
US20100140656A1 (en) | 2008-12-04 | 2010-06-10 | Epivalley Co., Ltd. | Semiconductor Light-Emitting Device |
EP2259329A1 (en) * | 2009-05-26 | 2010-12-08 | Institut de Ciències Fotòniques, Fundació Privada | Metal transparent conductors with low sheet resistance |
-
2011
- 2011-07-25 US US13/812,587 patent/US8975658B2/en active Active
- 2011-07-25 EP EP11754489.0A patent/EP2603936B1/en active Active
- 2011-07-25 RU RU2013110304/28A patent/RU2566403C2/ru active
- 2011-07-25 CN CN201180039384.2A patent/CN103201859B/zh active Active
- 2011-07-25 JP JP2013523683A patent/JP5841600B2/ja active Active
- 2011-07-25 WO PCT/IB2011/053304 patent/WO2012020346A1/en active Application Filing
Also Published As
Publication number | Publication date |
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EP2603936B1 (en) | 2016-05-11 |
RU2013110304A (ru) | 2014-09-20 |
CN103201859A (zh) | 2013-07-10 |
CN103201859B (zh) | 2016-03-02 |
US8975658B2 (en) | 2015-03-10 |
US20130187193A1 (en) | 2013-07-25 |
JP2013533643A (ja) | 2013-08-22 |
EP2603936A1 (en) | 2013-06-19 |
RU2566403C2 (ru) | 2015-10-27 |
WO2012020346A1 (en) | 2012-02-16 |
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