JP5839554B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5839554B2 JP5839554B2 JP2011241752A JP2011241752A JP5839554B2 JP 5839554 B2 JP5839554 B2 JP 5839554B2 JP 2011241752 A JP2011241752 A JP 2011241752A JP 2011241752 A JP2011241752 A JP 2011241752A JP 5839554 B2 JP5839554 B2 JP 5839554B2
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- Prior art keywords
- oxide semiconductor
- semiconductor layer
- transistor
- film
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Description
本実施の形態では、本発明の一態様であるトランジスタの構造及び作製方法について、図1乃至図3を用いて説明する。
図1(A)は、トランジスタ100の平面図である。図1(A)において、下地絶縁層102、ゲート絶縁層105及び絶縁層111は、便宜上、図示していない。図1(A)には、ゲート電極として機能する第1のゲート電極103と、チャネル形成領域として機能する酸化物半導体層107と、キャリア密度の高い酸化物半導体層106a、106bと、ソース電極109a及びドレイン電極109bと、ソース電極109a及びドレイン電極109bの間に設けられ、絶縁層111を介して酸化物半導体層107と重畳し、バックゲート電極として機能する第2のゲート電極113と、が図示されている。つまり、トランジスタ100は、デュアルゲート型のトランジスタである。
基板101は、フュージョン法やフロート法で作製される無アルカリガラス基板、後の加熱処理に耐えうる耐熱性を有するプラスチック基板等を用いることができる。また、ステンレスなどの金属基板の表面に絶縁膜を設けた基板や、半導体基板の表面に絶縁膜を設けた基板を適用してもよい。
次に、トランジスタ100の作製方法について図3を用いて説明する。
本実施の形態では、実施の形態1で示したトランジスタ100と構成が、一部異なるトランジスタ200について説明する。
本実施の形態では、上記実施の形態で説明したトランジスタの用途について説明する。上記実施の形態で説明したトランジスタは、パワーデバイスとして、例えば、様々な電子機器のバッテリーの保護回路等に用いることができる。
本実施の形態では、上記実施の形態で説明したトランジスタの酸化物半導体層107及び結晶性酸化物半導体層130に適用できる金属酸化物(酸化物半導体)について追記する。上記したように酸化物半導体としては、少なくともインジウム(In)あるいは亜鉛(Zn)とを含むことが好ましい。特にInとZnを含むことが好ましい。
実施の形態2で説明した結晶性酸化物半導体層130について追記する。結晶性酸化物半導体層130はCAACを含む酸化物で構成されている。CAACは、結晶性部分と非結晶性部分とを有し、結晶性部分の配向がc軸配向に揃っていることを特徴としている。
酸化物半導体に限らず、実際に測定される絶縁ゲート型トランジスタの電界効果移動度は、さまざまな理由によって本来の移動度よりも低くなる。
1.チャネル長L1:10μm
2.ソース電極109a及びドレイン電極109bの長さL2:5μm
3.酸化物半導体層107の厚さTos:10μm
4.絶縁層111の厚さTG:0.2μm
5.チャネル幅W1:100μm
6.ソース電極109a及びドレイン電極109bの幅W2:5μm
7.第1のゲート電極103に用いるタングステンの仕事関数φM:4.9eV
8.ソース電極109a及びドレイン電極109bに用いるチタンの仕事関数φM:4.0eV
9.第2のゲート電極113に用いるモリブデンの仕事関数φM:4.8eV
10.酸化物半導体層107に用いるIn−Ga−Zn系金属酸化物のバンドギャップEg:3.15eV、電子親和力χ:4.3eV、比誘電率:15、電子移動度:10cm2/Vs
11.ゲート絶縁層105に用いる酸化窒化シリコンの比誘電率:4.1
12.絶縁層111に用いる酸化シリコンの比誘電率:3.8
組成比としてIn:Sn:Zn=1:1:1のターゲットを用いて、ガス流量比をAr/O2=6/9sccm、成膜圧力を0.4Pa、成膜電力100Wとして、15nmの厚さとなるように基板上に酸化物半導体層を形成した。
サンプルAは酸化物半導体層の形成中に基板に意図的な加熱を施さなかった。
サンプルBは基板を200℃になるように加熱した状態で酸化物半導体層の形成を行った。
サンプルCは基板を200℃になるように加熱した状態で酸化物半導体層の形成を行った。
図17(A)にサンプルAのトランジスタの初期特性を示す。なお、図17(A)において、実線はドレイン電流(Ids)を示し、破線は電界効果移動度を示す。
サンプルB(前記酸化物半導体層の形成後加熱処理なし)及びサンプルC(前記酸化物半導体層の形成後加熱処理あり)に対してゲートBTストレス試験を行った。
101 基板
102 下地絶縁層
103 第1のゲート電極
104a 島状のキャリア密度の高い酸化物半導体膜
104b 島状のキャリア密度の高い酸化物半導体膜
105 ゲート絶縁層
106a キャリア密度の高い酸化物半導体膜
106b キャリア密度の高い酸化物半導体膜
107 酸化物半導体層
109a ソース電極
109b ドレイン電極
111 絶縁層
113 第2のゲート電極
130 結晶性酸化物半導体層
150 開口部
200 トランジスタ
1000 電磁調理器
1001 コイル部
1002 バッテリー
1003 半導体装置
1010 電動自転車
1011 モータ部
1012 バッテリー
1013 半導体装置
Claims (4)
- 第1の電極と、
前記第1の電極上の、ゲート絶縁層と、
前記ゲート絶縁層上の、第1の酸化物半導体層及び第2の酸化物半導体層と、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層上の、第3の酸化物半導体層と、
前記第3の酸化物半導体層上の、第4の酸化物半導体層及び第5の酸化物半導体層と、
前記第4の酸化物半導体層と電気的に接続された、ソース電極と、
前記第5の酸化物半導体層と電気的に接続された、ドレイン電極と、
前記ソース電極、及び前記ドレイン電極上の、絶縁層と、
前記絶縁層上の、第2の電極と、を有し、
前記第1の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第2の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第4の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第5の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第1の電極は、前記第3の酸化物半導体層と重なる領域を有し、
前記第2の電極は、前記第3の酸化物半導体層と重なる領域を有し、
前記第3の酸化物半導体層は、チャネル長方向における、一方の端部と、他方の端部とを有し、
前記第3の酸化物半導体層の一方の端部は、前記第1の酸化物半導体層及び前記第4の酸化物半導体層によって、覆われ、
前記第3の酸化物半導体層の他方の端部は、前記第2の酸化物半導体層及び前記第5の酸化物半導体層によって、覆われていることを特徴とする半導体装置。 - 第1の電極と、
前記第1の電極上の、ゲート絶縁層と、
前記ゲート絶縁層上の、第1の酸化物半導体層及び第2の酸化物半導体層と、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層上の、第3の酸化物半導体層と、
前記第3の酸化物半導体層上の、第4の酸化物半導体層及び第5の酸化物半導体層と、
前記第4の酸化物半導体層と電気的に接続された、ソース電極と、
前記第5の酸化物半導体層と電気的に接続された、ドレイン電極と、
前記ソース電極、及び前記ドレイン電極上の、絶縁層と、
前記絶縁層上の、第2の電極と、を有し、
前記第1の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第2の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第4の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第5の酸化物半導体層のキャリア密度は、前記第3の酸化物半導体層のキャリア密度よりも高く、
前記第1の電極は、前記第3の酸化物半導体層と重なる領域を有し、
前記第2の電極は、前記第3の酸化物半導体層と重なる領域を有し、
前記第3の酸化物半導体層は、チャネル長方向における、一方の端部と、他方の端部とを有し、
前記第3の酸化物半導体層の一方の端部の下側は、前記第1の酸化物半導体層と接する領域を有し、
前記第3の酸化物半導体層の一方の端部の上側及び側面は、前記第4の酸化物半導体層と接する領域を有し、
前記第3の酸化物半導体層の他方の端部の下側は、前記第2の酸化物半導体層と接する領域を有し、
前記第3の酸化物半導体層の他方の端部の上側及び側面は、前記第5の酸化物半導体層と接する領域を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第3の酸化物半導体層は、0.2μm以上10μm以下の厚さを有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第3の酸化物半導体層は、表面に対して垂直方向に沿うように、c軸配向した結晶領域を有することを特徴とする半導体装置。
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TW201234593A (en) | 2012-08-16 |
US8916866B2 (en) | 2014-12-23 |
TWI538207B (zh) | 2016-06-11 |
JP2012256825A (ja) | 2012-12-27 |
US20120104385A1 (en) | 2012-05-03 |
KR101917588B1 (ko) | 2018-11-13 |
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