JP5820416B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000010410 layer Substances 0.000 claims description 130
- 239000011229 interlayer Substances 0.000 claims description 113
- 229910052751 metal Inorganic materials 0.000 claims description 98
- 239000002184 metal Substances 0.000 claims description 98
- 239000010949 copper Substances 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 42
- 229910052802 copper Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 31
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 31
- 229910052721 tungsten Inorganic materials 0.000 claims description 31
- 239000010937 tungsten Substances 0.000 claims description 31
- 230000000149 penetrating effect Effects 0.000 claims description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000010948 rhodium Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Description
図1〜図5を用いて、本発明の第1の実施形態に係る半導体装置の要部の構造及び半導体装置の製造方法を説明する。図1〜図5は本実施形態に係る半導体装置の製造方法による半導体装置の製造工程の一部の工程を示す模式的断面図である。
2 第1の層間絶縁層
3 第2の層間絶縁層
4 第1のトレンチ
5 第2のトレンチ
6 第1の金属膜
6a 第1の配線
6b 金属膜
7 第2の金属膜
7a 第2の配線
Claims (7)
- 基板と、
前記基板上に設けられた絶縁体からなる第1の層間絶縁層と、
前記第1の層間絶縁層上に設けられた絶縁体からなる第2の層間絶縁層と、
前記第2の層間絶縁層の前記基板とは反対側の表面から前記第2の層間絶縁層を貫通し、40nmより小さい幅であって前記第2の層間絶縁層の厚さの2倍より小さい幅を有する第1のトレンチと、
前記第1のトレンチ内に埋め込まれた第1の金属からなる第1の配線と、
前記第2の層間絶縁層の前記表面から前記第2の層間絶縁層を貫通し、前記第1のトレンチの前記幅よりも広い幅を有する第2のトレンチと、
前記第2のトレンチ内に埋め込まれた第2の金属からなる第2の配線と、
を備え、
前記第1の金属は、前記第2の金属中の電子の平均自由工程よりも短い電子の平均自由工程を有し、
前記第1の配線の幅及び前記第2の配線の幅が前記第1のトレンチの前記幅と同じ幅としたときに、前記第2の配線の比抵抗が、前記第1の配線の比抵抗より高く、
前記第2の配線は、前記第1の金属からなる金属膜を介して前記第2のトレンチ内に埋め込まれ、
前記第2のトレンチ内の前記第1の金属からなる前記金属膜の厚さは、前記第1のトレンチの前記幅の半分より大きく且つ前記第2の層間絶縁層の前記厚さより小さく、
前記第1の金属は、タングステン、モリブデン、ロジウム、イリジウム、亜鉛、コバルト、ニッケル、ルテニウム、及び鉄のいずれか1つであり、
前記第2の金属には、銅を用い、
前記金属膜と前記第2の配線との間にバリアメタル層をさらに備え、
前記バリアメタル層は、チタン、窒化チタン、及びチタンと窒化チタンとの積層構造、並びに、タンタル、窒化タンタル、及びタンタルと窒化タンタルとの積層構造、のうちのいずれか1つから構成された半導体装置。 - 基板と、
前記基板上に設けられた絶縁体からなる第1の層間絶縁層と、
前記第1の層間絶縁層上に設けられた絶縁体からなる第2の層間絶縁層と、
前記第2の層間絶縁層の前記基板とは反対側の表面から前記第2の層間絶縁層を貫通する第1のトレンチと、
前記第1のトレンチ内に埋め込まれた第1の金属からなる第1の配線と、
前記第2の層間絶縁層の前記表面から前記第2の層間絶縁層を貫通し、前記第1のトレンチの幅よりも広い幅を有する第2のトレンチと、
前記第2のトレンチ内に埋め込まれた銅を用いた第2の配線と、
を備え、
前記第1の配線の幅は40nmより小さく、
前記第1の金属は、前記銅の電子の平均自由工程よりも短い電子の平均自由工程を有する半導体装置。 - 前記第1の配線の幅及び前記第2の配線の幅が前記第1のトレンチの前記幅と同じ幅としたときに、前記第2の配線の比抵抗が、前記第1の配線の比抵抗より高い、請求項2記載の半導体装置。
- 前記第2の配線は、前記第1の金属からなる金属膜を介して前記第2のトレンチ内に埋め込まれている請求項2または3に記載の半導体装置。
- 前記第2のトレンチ内の前記第1の金属からなる前記金属膜の厚さは、前記第1のトレンチの前記幅の半分より大きく且つ前記第2の層間絶縁層の前記厚さより小さい請求項4記載の半導体装置。
- 基板上に、絶縁体からなる第1の層間絶縁層を形成する工程と、
前記第1の層間絶縁層上に絶縁体からなる第2の層間絶縁層を形成する工程と、
前記第2の層間絶縁層の表面から前記第2の層間絶縁層を貫通し、40nmより小さい幅であって前記第2の層間絶縁層の厚さの2倍より小さい幅を有する第1のトレンチと、前記第2の層間絶縁層の前記表面から前記第2の層間絶縁層を貫通し、前記第1のトレンチの前記幅よりも広い幅を有する第2のトレンチとを同時に形成する工程と、
前記第1のトレンチを埋め込み、前記第2の層間絶縁層の前記表面並びに前記第2のトレンチの側壁及び底面を覆う第1の金属からなる第1の金属膜を形成する工程と、
前記第1の金属膜を介して、前記第1のトレンチ上、前記第2の層間絶縁層の前記表面上、並びに前記第2のトレンチの前記側壁上及び前記底面上に、銅を用いた第2の金属膜を形成する工程と、
前記第2の層間絶縁層の前記表面が露出するまで前記第2の金属膜及び前記第1の金属膜を除去する工程と、
を備えた、半導体装置の製造方法。 - 前記第2の層間絶縁層の前記表面が露出するまで前記第2の金属膜及び前記第1の金属膜を除去する前記工程により、
前記第1のトレンチ内を埋め込む前記第1の金属膜からなる第1の配線と、
前記第2のトレンチ内を埋め込む前記第2の金属膜からなる第2の配線と、
前記第1の層間絶縁層と前記第2の配線との間、及び前記第2の層間絶縁層と前記第2の配線との間に、前記第1の金属膜からなる金属膜と、
が形成される請求項6記載の半導体装置の製造方法。
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JP6378115B2 (ja) * | 2015-03-12 | 2018-08-22 | 東芝メモリ株式会社 | 半導体装置、及び、半導体装置の製造方法 |
US9530737B1 (en) * | 2015-09-28 | 2016-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9805976B2 (en) * | 2016-01-08 | 2017-10-31 | Applied Materials, Inc. | Co or Ni and Cu integration for small and large features in integrated circuits |
JP6799843B2 (ja) * | 2016-04-22 | 2020-12-16 | 国立大学法人茨城大学 | Ru成膜方法、Ru成膜装置 |
JP2018049944A (ja) | 2016-09-21 | 2018-03-29 | 東芝メモリ株式会社 | 半導体装置の製造方法および半導体製造装置 |
US9793206B1 (en) | 2016-09-29 | 2017-10-17 | International Business Machines Corporation | Heterogeneous metallization using solid diffusion removal of metal interconnects |
JP2018207110A (ja) * | 2017-06-06 | 2018-12-27 | 東京エレクトロン株式会社 | 二重金属電力レールを有する集積回路の製造方法 |
US10559530B2 (en) | 2017-12-27 | 2020-02-11 | International Business Machines Corporation | Forming dual metallization interconnect structures in single metallization level |
US10586767B2 (en) | 2018-07-19 | 2020-03-10 | International Business Machines Corporation | Hybrid BEOL metallization utilizing selective reflection mask |
US11075165B2 (en) * | 2019-07-19 | 2021-07-27 | Applied Materials, Inc. | Methods and apparatus for forming dual metal interconnects |
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