JP5820404B2 - 平坦化方法及び平坦化装置 - Google Patents
平坦化方法及び平坦化装置 Download PDFInfo
- Publication number
- JP5820404B2 JP5820404B2 JP2013020943A JP2013020943A JP5820404B2 JP 5820404 B2 JP5820404 B2 JP 5820404B2 JP 2013020943 A JP2013020943 A JP 2013020943A JP 2013020943 A JP2013020943 A JP 2013020943A JP 5820404 B2 JP5820404 B2 JP 5820404B2
- Authority
- JP
- Japan
- Prior art keywords
- solid plate
- workpiece
- treatment liquid
- flattening
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 35
- 239000007787 solid Substances 0.000 claims description 85
- 239000007788 liquid Substances 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 46
- -1 fluorine ions Chemical class 0.000 claims description 43
- 229910052739 hydrogen Inorganic materials 0.000 claims description 29
- 239000001257 hydrogen Substances 0.000 claims description 29
- 230000002378 acidificating effect Effects 0.000 claims description 22
- 239000003054 catalyst Substances 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000011737 fluorine Substances 0.000 claims description 15
- 150000001768 cations Chemical class 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000010494 dissociation reaction Methods 0.000 claims description 6
- 230000005593 dissociations Effects 0.000 claims description 6
- 125000000524 functional group Chemical group 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 239000003929 acidic solution Substances 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 2
- 235000003270 potassium fluoride Nutrition 0.000 claims description 2
- 239000011698 potassium fluoride Substances 0.000 claims description 2
- 235000013024 sodium fluoride Nutrition 0.000 claims description 2
- 239000011775 sodium fluoride Substances 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims 4
- 239000011259 mixed solution Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000005498 polishing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
に関する。
を含む処理液が酸解離定数が1.0×10-3以下の官能基をもつ弱酸性陽イオン交換体である
固体酸性触媒を含む固体板の表面に供給されている状態で、酸化珪素膜を含む被加工物の
被加工面と、水素イオンが吸着した固体板の表面とを接触または極接近させることにより
、被加工物の被加工面を平坦化する。
図1乃至図3を用いて、本実施形態に係る平坦化方法について説明する。本実施形態は、フッ素(F)イオンを含有する処理液15中において酸化珪素膜21を含む被加工物12の被加工面を水素(H)イオン23が吸着した固体板11の表面に接触させることで、接触した酸化珪素膜の被加工面を化学的に溶解させ、被加工面の平坦化を行う例である。本実施形態では、機械的研磨を必要としないため、被加工面への研磨ダメージを抑制することができる。以下に、本実施形態について詳説する。
まず、図1を用いて、本実施形態に係る酸化珪素膜の平坦化を行う平坦化装置について説明する。図1は、本実施形態に係る酸化珪素膜の平坦化を行う平坦化装置の構成例を示す斜視図である。
次に、図2及び図3を用いて、本実施形態に係る酸化珪素膜の平坦化方法および原理について説明する。図2及び図3は、本実施形態に係る酸化珪素膜の平坦化工程および原理を示す断面図である。
すなわち、フッ素イオンと珪素とが結合し、ヘキサフルオロ珪酸イオン(SiF6 2−)として処理液15中に溶解する。
上記実施形態によれば、フッ素イオン24を含む処理液15中において、被加工物12(酸化珪素膜21)の被加工面を水素イオン23が吸着した固体板11の表面に接触させる。これにより、固体板11に接触した酸化珪素膜21の被加工面を化学的に溶解させ、被加工面の平坦化を行う。すなわち、酸化珪素膜21を機械的な研磨なく、化学的な反応のみで平坦化することができる。このため、機械的研磨によって生じる酸化珪素膜21の被加工面への研磨ダメージを抑制することができる。
図4及び図5を用いて、本実地形態に係る平坦化装置について説明する。
図4は、第2の実施形態に係る酸化珪素膜の平坦化を行う平坦化装置の構成例を示す斜視図である。第2の実施形態では、第1の実施形態のように容器10に処理液15を溜めるのではなく、供給口25を通して固体板11上に処理液15を供給する。固体板11は、被加工物12の少なくとも2倍以上の直径をもち、回転運動を行うことができる。供給口25は被加工物12の回転方向の上流側に配置される。その他の構成及び平坦化方法については、図1に示す第1の実施形態の平坦化装置と同様である。
本実施形態では、浸すだけでは反応しないフッ素イオン24を含む処理液15に酸化珪素膜21を浸し、その被加工面に水素イオン23を含む固体板11の表面を接触または極近接させる。これにより、固体板11の表面と接触または極近接した酸化珪素膜21の被加工面のみを反応させて平坦化することができる。
図6乃至図9を用いて、第1の実施形態および第2の実施形態に係る平坦化方法の適用例について説明する。本実施形態に係る平坦化方法は、半導体装置のSTI(Shallow Trench Isolation)形成プロセスに適用され得る。
Claims (14)
- フッ素イオンを含む処理液が、酸解離定数が1.0×10-3以下の官能基をもつ弱酸性陽イ
オン交換体である固体酸性触媒を含む固体板の表面に供給されている状態で、酸化珪素膜
を含む被加工物の被加工面と、水素イオンが吸着した前記固体板の表面とを接触または極
接近させることにより、前記被加工物の被加工面を平坦化することを特徴とする平坦化方
法。 - 前記陽イオン交換体は、カルボキシル基を有する請求項1に記載の平坦化方法。
- 前記処理液のpHが7以下であることを特徴とする請求項1又は請求項2に記載の平坦
化方法。 - 前記処理液は、フッ化ナトリウム水溶液、フッ化カリウム水溶液、若しくはフッ化アン
モニウム水溶液、又はこれらとフッ化水素水溶液との混合溶液であることを特徴とする請
求項1乃至請求項3のいずれか1項に記載の平坦化方法。 - 接触または極接近した前記被加工物の被加工面と前記固体板の表面の温度を上昇させる
ことを特徴とする請求項1乃至請求項4のいずれか1項に記載の平坦化方法。 - 前記被加工物の被加工面の平坦化前に、酸性溶液に浸されることにより前記固体板の表
面に水素イオンが吸着されることを特徴とする請求項1乃至請求項5のいずれか1項に記
載の平坦化方法。 - 前記処理液は、供給口から前記固体板の表面に供給されることを特徴とする請求項1乃
至請求項6のいずれか1項に記載の平坦化方法。 - 酸化珪素を含む被加工物を保持する保持部と、
酸解離定数が1.0×10-3以下の官能基をもつ弱酸性陽イオン交換体である固体酸性触媒
を含み、表面に水素イオンが吸着する固体板と、
フッ素イオンを含む処理液を供給する処理液供給部と、
を備え、
前記処理液が前記固体板の表面に供給されている状態で、前記被加工物の被加工面と、
前記固体板の表面とを接触または極接近させることにより、前記被加工物の被加工面を平
坦化することを特徴とする平坦化装置。 - 前記陽イオン交換体は、カルボキシル基を有する請求項8に記載の平坦化装置。
- 前記処理液供給部は、前記固体板の回転方向の上流側に、前記処理液を供給することを
特徴とする請求項8又は9に記載の平坦化装置。 - 前記被加工物及び前記固体板の温度を調整する熱源を備えたことを特徴とする請求項8
乃至請求項10のいずれか1項に記載の平坦化装置。 - 酸化珪素を含む被加工物を保持する保持部と、
酸解離定数が1.0×10-3以下の官能基をもつ弱酸性陽イオン交換体である固体酸性触媒
を含み、表面に水素イオンが吸着する回転可能な固体板と、
前記固体板の回転方向の上流側に、フッ素イオンを含む処理液を供給する処理液供給部
と、
を備えた平坦化装置。 - 前記陽イオン交換体は、カルボキシル基を有する請求項12に記載の平坦化装置。
- 前記被加工物及び前記固体板の温度を調整する熱源を備えたことを特徴とする請求項1
2又は13に記載の平坦化装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013020943A JP5820404B2 (ja) | 2013-02-05 | 2013-02-05 | 平坦化方法及び平坦化装置 |
US14/021,413 US9144879B2 (en) | 2013-02-05 | 2013-09-09 | Planarization method and planarization apparatus |
US14/826,966 US10283383B2 (en) | 2013-02-05 | 2015-08-14 | Planarization method and planarization apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013020943A JP5820404B2 (ja) | 2013-02-05 | 2013-02-05 | 平坦化方法及び平坦化装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014154608A JP2014154608A (ja) | 2014-08-25 |
JP5820404B2 true JP5820404B2 (ja) | 2015-11-24 |
Family
ID=51259566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013020943A Active JP5820404B2 (ja) | 2013-02-05 | 2013-02-05 | 平坦化方法及び平坦化装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US9144879B2 (ja) |
JP (1) | JP5820404B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5820404B2 (ja) * | 2013-02-05 | 2015-11-24 | 株式会社東芝 | 平坦化方法及び平坦化装置 |
WO2015157507A1 (en) | 2014-04-09 | 2015-10-15 | Tokyo Electron Limited | Method for correcting wafer bow from overlay |
JP6346124B2 (ja) * | 2015-06-02 | 2018-06-20 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
JP6438868B2 (ja) | 2015-09-16 | 2018-12-19 | 東芝メモリ株式会社 | 半導体装置の製造方法および半導体製造装置 |
US10879087B2 (en) | 2017-03-17 | 2020-12-29 | Toshiba Memory Corporation | Substrate treatment apparatus and manufacturing method of semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10335278A (ja) * | 1997-05-30 | 1998-12-18 | Nikon Corp | 酸化シリコンを主成分とする被加工物の研磨方法 |
US20040177867A1 (en) * | 2002-12-16 | 2004-09-16 | Supercritical Systems, Inc. | Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal |
US8316866B2 (en) * | 2003-06-27 | 2012-11-27 | Lam Research Corporation | Method and apparatus for cleaning a semiconductor substrate |
JP2004072099A (ja) | 2003-08-01 | 2004-03-04 | Hitachi Ltd | 研磨方法 |
JP4506399B2 (ja) | 2004-10-13 | 2010-07-21 | 株式会社荏原製作所 | 触媒支援型化学加工方法 |
US20060255012A1 (en) * | 2005-05-10 | 2006-11-16 | Gunilla Jacobson | Removal of particles from substrate surfaces using supercritical processing |
JP5007384B2 (ja) | 2006-10-18 | 2012-08-22 | 株式会社荏原製作所 | 触媒支援型化学加工方法及び装置 |
EP2381008A2 (en) * | 2006-08-28 | 2011-10-26 | Osaka University | Catalyst-aided chemical processing method and apparatus |
JP2008081389A (ja) | 2006-08-28 | 2008-04-10 | Osaka Univ | 触媒支援型化学加工方法及び装置 |
US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
JP4887266B2 (ja) * | 2007-10-15 | 2012-02-29 | 株式会社荏原製作所 | 平坦化方法 |
US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
EP2513955A1 (en) | 2009-12-15 | 2012-10-24 | Osaka University | Polishing method, polishing apparatus and polishing tool |
JP5552648B2 (ja) | 2009-12-15 | 2014-07-16 | 国立大学法人大阪大学 | 研磨方法及び研磨装置 |
KR101801413B1 (ko) * | 2009-12-23 | 2017-12-20 | 램 리써치 코포레이션 | 퇴적 후 웨이퍼 세정 포뮬레이션 |
JP5820404B2 (ja) * | 2013-02-05 | 2015-11-24 | 株式会社東芝 | 平坦化方法及び平坦化装置 |
-
2013
- 2013-02-05 JP JP2013020943A patent/JP5820404B2/ja active Active
- 2013-09-09 US US14/021,413 patent/US9144879B2/en active Active
-
2015
- 2015-08-14 US US14/826,966 patent/US10283383B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20140220778A1 (en) | 2014-08-07 |
US10283383B2 (en) | 2019-05-07 |
US20150357212A1 (en) | 2015-12-10 |
JP2014154608A (ja) | 2014-08-25 |
US9144879B2 (en) | 2015-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5820404B2 (ja) | 平坦化方法及び平坦化装置 | |
US20160035598A1 (en) | Method for chemical planarization and chemical planarization apparatus | |
KR20170044522A (ko) | 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법 | |
US10711160B2 (en) | Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same | |
JP5767898B2 (ja) | 半導体装置の製造方法 | |
JP6189571B1 (ja) | 研磨用組成物およびこれを用いた研磨方法、ならびにこれらを用いた研磨済研磨対象物の製造方法 | |
JPWO2014103725A1 (ja) | 化学機械研磨用水系分散体および化学機械研磨方法 | |
KR20170115058A (ko) | 연마용 조성물 | |
JP2010501121A (ja) | 固定磨き剤cmpのための選択性化学薬剤 | |
JP5701736B2 (ja) | 平坦化方法および平坦化装置 | |
CN104078346A (zh) | 半导体器件的平坦化方法 | |
US20060088999A1 (en) | Methods and compositions for chemical mechanical polishing substrates | |
CN103972093B (zh) | 鳍式场效应晶体管牺牲栅极的制作方法 | |
US20120264302A1 (en) | Chemical mechanical polishing process | |
US8211325B2 (en) | Process sequence to achieve global planarity using a combination of fixed abrasive and high selectivity slurry for pre-metal dielectric CMP applications | |
JP5835890B2 (ja) | 素子間分離層の形成方法 | |
TWI843059B (zh) | 電晶體及其製造方法 | |
TWI573188B (zh) | 化學機械硏磨半導體基板之方法 | |
US20240247168A1 (en) | Compositions for polishing hardmasks and related systems and methods | |
JP2011071303A (ja) | 半導体装置の製造方法 | |
KR20050062919A (ko) | 반도체 소자의 캐패시터 형성방법 | |
JP6346124B2 (ja) | 半導体装置の製造方法 | |
CN102610509B (zh) | 元件间分离层的形成方法 | |
CN112331610A (zh) | 半导体结构的制备方法 | |
TW201916151A (zh) | 半導體元件的製造機制 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD07 | Notification of extinguishment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7427 Effective date: 20140812 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140902 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150205 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20150216 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20150218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150616 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150904 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151002 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5820404 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |