JP5790416B2 - Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell - Google Patents

Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell Download PDF

Info

Publication number
JP5790416B2
JP5790416B2 JP2011241905A JP2011241905A JP5790416B2 JP 5790416 B2 JP5790416 B2 JP 5790416B2 JP 2011241905 A JP2011241905 A JP 2011241905A JP 2011241905 A JP2011241905 A JP 2011241905A JP 5790416 B2 JP5790416 B2 JP 5790416B2
Authority
JP
Japan
Prior art keywords
dye
conductive layer
transparent conductive
solar cell
sensitized solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011241905A
Other languages
Japanese (ja)
Other versions
JP2013098109A (en
Inventor
啓一 佐原
啓一 佐原
金井　敏正
敏正 金井
耕司 池上
耕司 池上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP2011241905A priority Critical patent/JP5790416B2/en
Publication of JP2013098109A publication Critical patent/JP2013098109A/en
Application granted granted Critical
Publication of JP5790416B2 publication Critical patent/JP5790416B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)

Description

本発明は、色素増感太陽電池の電極、その製造方法及び色素増感太陽電池の透明導電層付基板に関する。   The present invention relates to an electrode of a dye-sensitized solar cell, a production method thereof, and a substrate with a transparent conductive layer of the dye-sensitized solar cell.

従来、太陽光エネルギーを電気エネルギーに変換する電池として、種々の太陽電池が知られている。例えば、特許文献１には、色素増感太陽電池が開示されている。   Conventionally, various solar cells are known as batteries that convert solar energy into electrical energy. For example, Patent Document 1 discloses a dye-sensitized solar cell.

特開２００６−４９０８２号公報JP 2006-49082 A

色素増感太陽電池の電極では、基板の上に配された透明導電層の上に、多孔質酸化物半導体層が設けられる。多孔質酸化物半導体層は、高温下で熱処理されることがある。この熱処理などにより、透明導電層と多孔質酸化物半導体層とが剥がれやすくなる場合がある。   In the electrode of the dye-sensitized solar cell, the porous oxide semiconductor layer is provided on the transparent conductive layer disposed on the substrate. The porous oxide semiconductor layer may be heat-treated at a high temperature. By this heat treatment or the like, the transparent conductive layer and the porous oxide semiconductor layer may be easily peeled off.

本発明は、透明導電層と多孔質酸化物半導体層とが剥がれにくい色素増感太陽電池の電極を提供することを主な目的とする。   The main object of the present invention is to provide an electrode of a dye-sensitized solar cell in which the transparent conductive layer and the porous oxide semiconductor layer are hardly peeled off.

本発明に係る色素増感太陽電池の電極は、透明導電層付基板と、多孔質酸化物半導体層とを備える。透明導電層付基板は、ガラス基板、下地層、及び透明導電層を有する。下地層は、ガラス基板の一主面の上に配されている。下地層は、ガラス基板とは反対側の表面に凹凸を有する。透明導電層は、下地層の上に配されている。多孔質酸化物半導体層は、透明導電層の上に配されている。   The electrode of the dye-sensitized solar cell according to the present invention includes a substrate with a transparent conductive layer and a porous oxide semiconductor layer. The substrate with a transparent conductive layer includes a glass substrate, a base layer, and a transparent conductive layer. The underlayer is disposed on one main surface of the glass substrate. The underlayer has irregularities on the surface opposite to the glass substrate. The transparent conductive layer is disposed on the base layer. The porous oxide semiconductor layer is disposed on the transparent conductive layer.

なお、本発明において、ガラス基板には、結晶化ガラスからなる基板が含まれるものとする。   In the present invention, the glass substrate includes a substrate made of crystallized glass.

下地層のガラス基板とは反対側の表面の表面粗さは、中心線平均粗さＲａで５ｎｍ以上であることが好ましい。   The surface roughness of the surface of the underlayer opposite to the glass substrate is preferably 5 nm or more in terms of the center line average roughness Ra.

本発明において、中心線平均粗さＲａは、ＪＩＳＢ０６０１に規定された方法により測定した値である。   In the present invention, the centerline average roughness Ra is a value measured by a method defined in JISB0601.

透明導電層の厚みは、０．５μm〜１．５μmであることが好ましい。   The thickness of the transparent conductive layer is preferably 0.5 μm to 1.5 μm.

透明導電層のガラス基板とは反対側の表面の表面粗さは、中心線平均粗さＲａで５ｎｍ以上であることが好ましい。   The surface roughness of the surface of the transparent conductive layer opposite to the glass substrate is preferably 5 nm or more in terms of the center line average roughness Ra.

下地層は、酸化チタンを含むことが好ましい。   The underlayer preferably contains titanium oxide.

多孔質酸化物半導体層は、酸化物粒子の燒結体からなってもよい。   The porous oxide semiconductor layer may consist of a sintered body of oxide particles.

多孔質酸化物半導体層は、酸化チタンを含んでいてもよい。   The porous oxide semiconductor layer may contain titanium oxide.

本発明に係る色素増感太陽電池の透明導電層付基板において、多孔質酸化物半導体層が一主面上に形成される。透明導電層付基板は、ガラス基板と、下地層と、透明導電層とを備える。下地層は、ガラス基板の一主面の上に配されている。下地層は、ガラス基板とは反対側の表面に凹凸を有する。透明導電層は、下地層の上に配されている。   In the substrate with a transparent conductive layer of the dye-sensitized solar cell according to the present invention, the porous oxide semiconductor layer is formed on one main surface. The substrate with a transparent conductive layer includes a glass substrate, a base layer, and a transparent conductive layer. The underlayer is disposed on one main surface of the glass substrate. The underlayer has irregularities on the surface opposite to the glass substrate. The transparent conductive layer is disposed on the base layer.

本発明の色素増感太陽電池の電極の製造方法は、ガラス基板の一主面の上に、スプレー法を用いて下地層を形成する工程と、下地層の上に透明導電層を形成する工程と、透明導電層の上に多孔質酸化物半導体層を形成する工程とを備える。   The method for producing an electrode of a dye-sensitized solar cell according to the present invention includes a step of forming an underlayer using a spray method on one main surface of a glass substrate, and a step of forming a transparent conductive layer on the underlayer. And a step of forming a porous oxide semiconductor layer on the transparent conductive layer.

本発明によれば、透明導電層と多孔質酸化物半導体層とが剥がれにくい色素増感太陽電池の電極を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the electrode of a dye-sensitized solar cell with which a transparent conductive layer and a porous oxide semiconductor layer cannot peel easily can be provided.

本発明の一実施形態に係る色素増感太陽電池の電極の略図的断面図である。It is a schematic sectional drawing of the electrode of the dye-sensitized solar cell which concerns on one Embodiment of this invention.

以下、本発明を実施した好ましい形態の一例について説明する。但し、以下の実施形態は、単なる一例であり、本発明は、以下の実施形態に何ら限定されない。   Hereinafter, an example of the preferable form which implemented this invention is demonstrated. However, the following embodiments are merely examples, and the present invention is not limited to the following embodiments.

また、実施形態において参照する図面は、模式的に記載されたものであり、図面に描画された物体の寸法の比率などは、現実の物体の寸法の比率などとは異なる場合がある。具体的な物体の寸法比率などは、以下の説明を参酌して判断されるべきである。   The drawings referred to in the embodiments are schematically described, and the ratio of the dimensions of the objects drawn in the drawings may be different from the ratio of the dimensions of the actual objects. The specific dimensional ratio of the object should be determined in consideration of the following description.

図１は、本実施形態に係る色素増感太陽電池の電極の略図的断面図である。色素増感太陽電池の電極１は、透明導電層付基板２を備える。   FIG. 1 is a schematic cross-sectional view of an electrode of a dye-sensitized solar cell according to this embodiment. The electrode 1 of the dye-sensitized solar cell includes a substrate 2 with a transparent conductive layer.

透明導電層付基板２は、ガラス基板３を有する。ガラス基板３の両表面は、平坦である。ガラス基板３の両表面の表面粗さは、中心線平均粗さＲａで０．２ｎｍ〜２ｎｍ程度である。   The substrate 2 with a transparent conductive layer has a glass substrate 3. Both surfaces of the glass substrate 3 are flat. The surface roughness of both surfaces of the glass substrate 3 is about 0.2 nm to 2 nm in terms of the center line average roughness Ra.

ガラス基板３を構成するガラスは、透光性を有するガラスであれば、特に限定されない。ガラス基板３を構成するガラスとしては、無アルカリガラス、ソーダライムガラス、石英ガラスなどが挙げられる。これらの中でも、ガラス基板３を構成するガラスとしては、無アルカリガラスが好ましい。無アルカリガラスは、透光性及び歪み点が高く、製造コストが安いためである。   The glass which comprises the glass substrate 3 will not be specifically limited if it is glass which has translucency. Examples of the glass constituting the glass substrate 3 include alkali-free glass, soda lime glass, and quartz glass. Among these, as glass which comprises the glass substrate 3, an alkali free glass is preferable. This is because alkali-free glass has high translucency and strain point and is low in production cost.

なお、本発明において、無アルカリガラスとは、実質的にＬｉ，Ｎａ，Ｋなどのアルカリ金属成分を含まないガラスをいい、具体的には、アルカリ金属成分の含有量が、酸化物換算で、０．２質量％以下であるガラスをいう。   In the present invention, the alkali-free glass refers to a glass that does not substantially contain an alkali metal component such as Li, Na, K, and specifically, the content of the alkali metal component is calculated in terms of oxide. The glass which is 0.2 mass% or less.

ガラス基板３の厚みは、特に限定されず、例えば０．０３ｍｍ〜２ｍｍ程度とすればよい。   The thickness of the glass substrate 3 is not particularly limited, and may be about 0.03 mm to 2 mm, for example.

ガラス基板３の主面３ａの上には、下地層４が配されている。下地層４は、ガラス基板３とは反対側の表面４ａに凹凸を有する。表面４ａの表面粗さは、中心線平均粗さＲａで５ｎｍ以上であることが好ましく、１０ｎｍ以上であることがより好ましい。なお、表面４ａの中心線平均粗さＲａが大きすぎると、多孔質酸化物半導体層が均一に形成されず、太陽電池の変換効率が低下する。このため、表面４ａの中心線平均粗さＲａは、５００ｎｍ以下であることが好ましい。   On the main surface 3 a of the glass substrate 3, an underlayer 4 is disposed. The underlayer 4 has irregularities on the surface 4 a opposite to the glass substrate 3. The surface roughness of the surface 4a is preferably 5 nm or more, more preferably 10 nm or more in terms of the center line average roughness Ra. In addition, when the centerline average roughness Ra of the surface 4a is too large, the porous oxide semiconductor layer is not uniformly formed, and the conversion efficiency of the solar cell is lowered. For this reason, the center line average roughness Ra of the surface 4a is preferably 500 nm or less.

下地層４は、酸化チタンを含むことが好ましく、酸化チタンにより構成されていることがより好ましい。   The underlayer 4 preferably contains titanium oxide, and more preferably is made of titanium oxide.

下地層４の厚みは、特に限定されず、例えば０．１μｍ〜１．５μｍ程度であってもよい。   The thickness of the foundation layer 4 is not particularly limited, and may be, for example, about 0.1 μm to 1.5 μm.

下地層４の表面４ａの上には、透明導電層５が配されている。透明導電層５のガラス基板３とは反対側の表面５ａは、下地層４のガラス基板３とは反対側の表面４ａの形状と対応した形状を有する。よって、表面５ａの表面粗さは、表面５ａも凹凸を有し、通常、中心線平均粗さＲａで５ｎｍ以上となる。   A transparent conductive layer 5 is disposed on the surface 4 a of the foundation layer 4. The surface 5 a of the transparent conductive layer 5 opposite to the glass substrate 3 has a shape corresponding to the shape of the surface 4 a of the underlayer 4 opposite to the glass substrate 3. Therefore, the surface roughness of the surface 5a is also uneven, and the center line average roughness Ra is usually 5 nm or more.

透明導電層５を構成する材料は、透光性及び導電性を有するものであれば、特に限定されない。透明導電層５は、例えば、インジウムドープ酸化錫（ＩＴＯ）、フッ素ドープ酸化錫（ＦＴＯ）、インジウムドープ酸化亜鉛（ＩＺＯ）、アルミニウムドープ酸化亜鉛（ＡＺＯ）、酸化錫、酸化亜鉛、酸化インジウム、酸化チタンなどにより構成される。   The material which comprises the transparent conductive layer 5 will not be specifically limited if it has translucency and electroconductivity. The transparent conductive layer 5 is made of, for example, indium-doped tin oxide (ITO), fluorine-doped tin oxide (FTO), indium-doped zinc oxide (IZO), aluminum-doped zinc oxide (AZO), tin oxide, zinc oxide, indium oxide, or oxide. It is composed of titanium or the like.

透明導電層５の厚みは、０．５μｍ〜１．５μｍ程度であることが好ましく、０．７μｍ〜１．２μｍ程度であることがより好ましい。透明導電層５の厚みが薄すぎると、電気抵抗が大きくなる場合がある。透明導電層５の厚みが厚すぎると、中心線平均粗さＲａが小さくなる場合がある。   The thickness of the transparent conductive layer 5 is preferably about 0.5 μm to 1.5 μm, and more preferably about 0.7 μm to 1.2 μm. If the thickness of the transparent conductive layer 5 is too thin, the electrical resistance may increase. When the thickness of the transparent conductive layer 5 is too thick, the center line average roughness Ra may be small.

透明導電層５の表面５ａの上には、多孔質酸化物半導体層６が配されている。多孔質酸化物半導体層６において、光エネルギーが電気エネルギーに変換される。   On the surface 5a of the transparent conductive layer 5, a porous oxide semiconductor layer 6 is disposed. In the porous oxide semiconductor layer 6, light energy is converted into electric energy.

多孔質酸化物半導体層６は、酸化物粒子の燒結体、増感色素などを含んでいてもよい。   The porous oxide semiconductor layer 6 may contain a sintered body of oxide particles, a sensitizing dye, and the like.

酸化物粒子を構成する酸化物としては、例えば、酸化チタン、酸化亜鉛、酸化錫、酸化鉄、酸化ニオブ、酸化セリウム、酸化タングステンなどが挙げられる。   Examples of the oxide constituting the oxide particles include titanium oxide, zinc oxide, tin oxide, iron oxide, niobium oxide, cerium oxide, and tungsten oxide.

焼結前の酸化物粒子の平均粒子径は、３０ｎｍ以下であることが好ましく、２０ｎｍ以下であることがより好ましい。   The average particle diameter of the oxide particles before sintering is preferably 30 nm or less, and more preferably 20 nm or less.

本実施形態に係る色素増感太陽電池の電極１は、例えば、次のようにして製造することができる。   The electrode 1 of the dye-sensitized solar cell according to the present embodiment can be manufactured, for example, as follows.

まず、ガラス基板３の上に、下地層４を形成する。下地層４は、例えば、スプレー法により形成することができる。スプレー法を用いることにより、下地層４のガラス基板３とは反対側の表面４ａの上に凹凸を形成することができる。具体的には、金属アルコキシドを含有する有機溶剤をスプレー法により５μｍ〜６０μｍの大きさの粒子にして吹き付けた後、３５０〜５５０℃の温度で加熱し、有機成分を揮発又は燃焼させるとともに、金属成分を酸化させることにより、所望の凹凸を有する下地層４を形成できる。 次に、下地層４の上に透明導電層５を形成する。透明導電層５は、スパッタ法、蒸着法などの成膜方法により形成することができる。   First, the base layer 4 is formed on the glass substrate 3. The underlayer 4 can be formed by, for example, a spray method. By using the spray method, it is possible to form irregularities on the surface 4a of the base layer 4 opposite to the glass substrate 3. Specifically, an organic solvent containing a metal alkoxide is sprayed into particles having a size of 5 μm to 60 μm by a spray method, and then heated at a temperature of 350 to 550 ° C. to volatilize or burn organic components, By oxidizing the components, the underlayer 4 having the desired irregularities can be formed. Next, the transparent conductive layer 5 is formed on the base layer 4. The transparent conductive layer 5 can be formed by a film forming method such as sputtering or vapor deposition.

次に、透明導電層５の上に、酸化物粒子の燒結体、増感色素などを含む多孔質酸化物半導体層６を形成する。透明導電層５を形成する方法としは、特に限定されず、公知の方法が採用できる。   Next, a porous oxide semiconductor layer 6 containing a sintered body of oxide particles, a sensitizing dye, and the like is formed on the transparent conductive layer 5. It does not specifically limit as a method of forming the transparent conductive layer 5, A well-known method is employable.

本実施形態に係る色素増感太陽電池の電極１は、ガラス基板３とは反対側の表面４ａに凹凸を有する下地層４を備える。表面４ａの上には、透明導電層５が配されており、透明導電層５のガラス基板３とは反対側の表面５ａは、表面４ａの形状と対応した形状を有する。このため、透明導電層５と透明導電層５の表面５ａの上に配された多孔質酸化物半導体層６とは、アンカー効果により剥がれにくい。   The electrode 1 of the dye-sensitized solar cell according to the present embodiment includes a base layer 4 having irregularities on the surface 4 a opposite to the glass substrate 3. The transparent conductive layer 5 is disposed on the surface 4a, and the surface 5a on the opposite side of the transparent conductive layer 5 from the glass substrate 3 has a shape corresponding to the shape of the surface 4a. For this reason, the transparent conductive layer 5 and the porous oxide semiconductor layer 6 disposed on the surface 5a of the transparent conductive layer 5 are difficult to peel off due to the anchor effect.

色素増感太陽電池の電極１において、下地層４の表面４ａの中心線平均粗さが５ｎｍ以上、特に１０ｎｍ以上である場合、表面４ａの形状と対応した形状を有する透明導電層５の表面５ａと多孔質酸化物半導体層６とは、剥がれにくい。   In the electrode 1 of the dye-sensitized solar cell, when the center line average roughness of the surface 4a of the base layer 4 is 5 nm or more, particularly 10 nm or more, the surface 5a of the transparent conductive layer 5 having a shape corresponding to the shape of the surface 4a. And the porous oxide semiconductor layer 6 are difficult to peel off.

色素増感太陽電池の電極１において、透明導電層５の厚みが、０．５μｍ〜１．５μｍ
程度、特に０．７μｍ〜１．２μｍ程度である場合、透明導電層５の表面５ａの形状が下地層４の表面４ａの形状と対応した形状となりやすいため好ましい。 In the electrode 1 of the dye-sensitized solar cell, the transparent conductive layer 5 has a thickness of 0.5 μm to 1.5 μm.
When the thickness is about 0.7 μm to 1.2 μm, the shape of the surface 5 a of the transparent conductive layer 5 tends to be a shape corresponding to the shape of the surface 4 a of the underlayer 4.

色素増感太陽電池の電極１において、下地層４が酸化チタンを含む場合、酸化チタンはガラス基板３及び透明導電層５との親和性が高く、ガラス基板３と下地層４及び下地層４と透明導電層５とが剥がれにくいため好ましい。   In the electrode 1 of the dye-sensitized solar cell, when the base layer 4 contains titanium oxide, the titanium oxide has high affinity with the glass substrate 3 and the transparent conductive layer 5, and the glass substrate 3, the base layer 4, and the base layer 4 This is preferable because the transparent conductive layer 5 is difficult to peel off.

１…色素増感太陽電池の電極
２…透明導電層付基板
３…ガラス基板
３ａ…ガラス基板の主面
４…下地層
４ａ…下地層の表面
５…透明導電層
５ａ…透明導電層の表面
６…多孔質酸化物半導体層 DESCRIPTION OF SYMBOLS 1 ... Electrode 2 of dye-sensitized solar cell ... Substrate with transparent conductive layer 3 ... Glass substrate 3a ... Main surface 4 of glass substrate ... Underlayer 4a ... Surface 5 of transparent layer ... Transparent conductive layer 5a ... Surface 6 of transparent conductive layer ... Porous oxide semiconductor layer

Claims (9)

ガラス基板、前記ガラス基板の一主面の上に配されており、前記ガラス基板とは反対側の表面に凹凸を有する酸化チタンを含む下地層、及び前記下地層の上に直接配された透明導電層を有する透明導電層付基板と、
前記透明導電層の上に配された、多孔質酸化物半導体層と、
を備える、色素増感太陽電池の電極。 A glass substrate, disposed on one main surface of the glass substrate , a base layer containing titanium oxide having irregularities on the surface opposite to the glass substrate, and a transparent disposed directly on the base layer A substrate with a transparent conductive layer having a conductive layer;
A porous oxide semiconductor layer disposed on the transparent conductive layer;
An electrode of a dye-sensitized solar cell, comprising: 前記下地層の前記ガラス基板とは反対側の表面の表面粗さが、中心線平均粗さＲａで５ｎｍ以上である、請求項１に記載の色素増感太陽電池の電極。   The electrode of the dye-sensitized solar cell according to claim 1, wherein the surface roughness of the surface of the underlayer opposite to the glass substrate is 5 nm or more in terms of centerline average roughness Ra. 前記透明導電層の厚みが、０．５μｍ〜１．５μｍである、請求項１または２に記載の色素増感太陽電池の電極。   The electrode of the dye-sensitized solar cell according to claim 1 or 2, wherein the transparent conductive layer has a thickness of 0.5 µm to 1.5 µm. 前記透明導電層の前記ガラス基板とは反対側の表面の表面粗さが、中心線平均粗さＲａで５ｎｍ以上である、請求項１〜３のいずれか一項に記載の色素増感太陽電池の電極。   The dye-sensitized solar cell according to any one of claims 1 to 3, wherein a surface roughness of the surface of the transparent conductive layer opposite to the glass substrate is 5 nm or more in terms of a center line average roughness Ra. Electrodes. 前記多孔質酸化物半導体層は、酸化物粒子の燒結体からなる、請求項１〜４のいずれか一項に記載の色素増感太陽電池の電極。 The electrode of the dye-sensitized solar cell according to any one of claims 1 to 4 , wherein the porous oxide semiconductor layer is formed of a sintered body of oxide particles. 前記多孔質酸化物半導体層は、酸化チタンを含む、請求項１〜５のいずれか一項に記載の色素増感太陽電池の電極。 The electrode of the dye-sensitized solar cell according to any one of claims 1 to 5 , wherein the porous oxide semiconductor layer contains titanium oxide. 前記ガラス基板は、無アルカリガラスにより構成される、請求項１〜６のいずれか一項に記載の色素増感太陽電池の電極。  The said glass substrate is an electrode of the dye-sensitized solar cell as described in any one of Claims 1-6 comprised with an alkali free glass. 多孔質酸化物半導体層が一主面上に形成される、色素増感太陽電池の透明導電層付基板であって、
ガラス基板と、
前記ガラス基板の一主面の上に配されており、前記ガラス基板とは反対側の表面に凹凸を有する酸化チタンを含む下地層と、
前記下地層の上に直接配された透明導電層と、
を備える色素増感太陽電池の透明導電層付基板。 A substrate with a transparent conductive layer of a dye-sensitized solar cell, in which a porous oxide semiconductor layer is formed on one main surface,
A glass substrate;
An underlayer containing titanium oxide , which is disposed on one main surface of the glass substrate and has irregularities on the surface opposite to the glass substrate;
A transparent conductive layer directly disposed on the underlayer;
A substrate with a transparent conductive layer of a dye-sensitized solar cell. ガラス基板の一主面の上に、スプレー法を用いて酸化チタンを含む下地層を形成する工程と、
前記下地層の上に透明導電層を形成する工程と、
前記透明導電層の上に多孔質酸化物半導体層を形成する工程と、
を備える、色素増感太陽電池の電極の製造方法。 Forming a base layer containing titanium oxide on one main surface of the glass substrate using a spray method;
Forming a transparent conductive layer on the underlayer;
Forming a porous oxide semiconductor layer on the transparent conductive layer;
A method for producing an electrode of a dye-sensitized solar cell.
JP2011241905A 2011-11-04 2011-11-04 Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell Active JP5790416B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011241905A JP5790416B2 (en) 2011-11-04 2011-11-04 Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011241905A JP5790416B2 (en) 2011-11-04 2011-11-04 Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell

Publications (2)

Publication Number Publication Date
JP2013098109A JP2013098109A (en) 2013-05-20
JP5790416B2 true JP5790416B2 (en) 2015-10-07

Family

ID=48619824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011241905A Active JP5790416B2 (en) 2011-11-04 2011-11-04 Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell

Country Status (1)

Country Link
JP (1) JP5790416B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6698772B2 (en) * 2018-09-20 2020-05-27 積水化学工業株式会社 Brittle material film and manufacturing method thereof, photoelectrode, dye-sensitized solar cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3247876B2 (en) * 1999-03-09 2002-01-21 日本板硝子株式会社 Glass substrate with transparent conductive film
JP2003229584A (en) * 2002-01-31 2003-08-15 Nippon Sheet Glass Co Ltd Glass substrate for photoelectric converter and photoelectric converter using the same
JP4948799B2 (en) * 2005-08-04 2012-06-06 株式会社フジクラ WORKING ELECTRODE AND ITS MANUFACTURING METHOD, SOLAR CELL AND ITS MANUFACTURING METHOD
JP2009037853A (en) * 2007-08-01 2009-02-19 Electric Power Dev Co Ltd Dye-sensitized solar cell, negative electrode of dye-sensitized solar cell, and its manufacturing method

Also Published As

Publication number Publication date
JP2013098109A (en) 2013-05-20

Similar Documents

Publication Publication Date Title
CN102779944B (en) Transparent conductive thin film
CN104576788B (en) Enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide and preparation method thereof
JP2013522813A (en) Transparent electrodes based on a combination of transparent conductive oxides, metals, and oxides
WO2011010685A1 (en) Glass substrate with conductive film for solar cell
JP2006516793A (en) Member for use in creating a light emitting display device
CN101697319B (en) Dye-sensitized anode of solar battery light and preparation method thereof
CN103730194A (en) Multilayer structure composite transparent conducting thin film based on silver nanowires and preparation method thereof
JP2011508946A (en) Conductive glass for dye-sensitized solar cell and method for producing the same
Kong et al. Performance improvement of dye-sensitized solar cells by surface patterning of fluorine-doped tin oxide transparent electrodes
CN107068866A (en) A kind of translucent perovskite solar cell and its package technique
JPWO2014115770A1 (en) Transparent conductive substrate and method for producing the same
TW201121114A (en) Inverted organic solar cell and method for manufacturing the same
WO2022054150A1 (en) Transparent electrode, method for manufacturing transparent electrode, and electronic device
TW201537274A (en) Electrochromic device and method of manufacturing the same
JP5790416B2 (en) Electrode of dye-sensitized solar cell, method for producing the same, and substrate with transparent conductive layer of dye-sensitized solar cell
JP6429152B2 (en) Photoelectrode and manufacturing method thereof
JP2008077924A (en) Photoelectric converter
TWI529990B (en) Production method of trans - type large area organic solar cell
JP2009071147A (en) Plasmon resonance photoelectric conversion element, and method of manufacturing the same
JP2013179217A (en) Solar cell and manufacturing method for the same
CN103203912B (en) A kind of new A ZO coated glass and preparation technology thereof
Yang et al. Flexible transparent electrodes based on metallic micro–nano architectures for perovskite solar cells
KR20130021170A (en) Manufacturing method of 2 layer hybrid transparent electrode
WO2015009073A1 (en) Method of fabricating light extraction substrate for organic light emitting device
KR20160022148A (en) Transparent electrode and method for manufacturing the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141119

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150707

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150720

R150 Certificate of patent or registration of utility model

Ref document number: 5790416

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150