JP5780242B2 - 窒化物系半導体発光素子 - Google Patents
窒化物系半導体発光素子 Download PDFInfo
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- JP5780242B2 JP5780242B2 JP2012547734A JP2012547734A JP5780242B2 JP 5780242 B2 JP5780242 B2 JP 5780242B2 JP 2012547734 A JP2012547734 A JP 2012547734A JP 2012547734 A JP2012547734 A JP 2012547734A JP 5780242 B2 JP5780242 B2 JP 5780242B2
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- 239000004065 semiconductor Substances 0.000 title claims description 175
- 150000004767 nitrides Chemical class 0.000 title claims description 134
- 229910052751 metal Inorganic materials 0.000 claims description 158
- 239000002184 metal Substances 0.000 claims description 158
- 239000007769 metal material Substances 0.000 claims description 41
- 229910052703 rhodium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 52
- 239000010948 rhodium Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 21
- 238000012360 testing method Methods 0.000 description 13
- 230000001681 protective effect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VFMMPHCGEFXGIP-UHFFFAOYSA-N 7,8-Benzoflavone Chemical compound O1C2=C3C=CC=CC3=CC=C2C(=O)C=C1C1=CC=CC=C1 VFMMPHCGEFXGIP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- YGGXZTQSGNFKPJ-UHFFFAOYSA-N methyl 2-naphthalen-1-ylacetate Chemical compound C1=CC=C2C(CC(=O)OC)=CC=CC2=C1 YGGXZTQSGNFKPJ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
(実施の形態1)
(基板1)
(n型窒化物系半導体層、活性領域3、p型窒化物系半導体層)
(n側電極7n、p側電極7p)
(透光性電極6a)
(パッド電極)
(バリア層81)
(第一金属層71a)
(窒化物系半導体発光素子のパッド電極の製造方法)
(窒化物系半導体層の形成:S10)
(n側電極用コンタクト領域の形成:S20)
(透光性電極6aの形成:S30)
(パッド電極の形成:S40)
(熱処理:S44)
(保護膜9の形成:S50)
[実施例]
(窒化物系半導体発光素子の作製)
(窒化物系半導体層の形成)
(n側電極用コンタクト領域の形成)
(透光性電極6aの形成)
(パッド電極の形成)
(保護膜9の形成)
(実施例1〜5)
(第二金属層71b)
(膜厚)
(実施の形態2)
(第二金属層の薄膜化)
(第三金属層71c)
(膜厚)
(第一金属層のCr含有率)
(実施の形態3)
1…基板
2…n型半導体層
3…活性領域
4…p型半導体層
6a…透光性電極
6b…p側パッド電極
7…パッド電極;7n…n側電極;7p…p側電極
9…保護膜
10…半導体構造
71…オーミック接触層;71a、71a’、71a”…第一金属層
71b、71b”…第二金属層
71c、71c’、71c”…第三金属層
73…ボンディング層
81…バリア層
82…密着層
M1…第一金属材料
M2…第二金属材料
Claims (6)
- 窒化物系の半導体層と、
前記半導体層上に設けられた、複数の金属層を積層して構成される電極構造と、
を備える窒化物系半導体発光素子であって、
前記電極構造は、
前記半導体層側に配置される第一金属層と、
前記第一金属層上に配置される第二金属層と、
を含み、
前記第一金属層は、Crよりも前記発光素子の発光ピーク波長における反射率が高いRhと、Crと、を含み、
前記第二金属層は、Ptを少なくとも含み、
前記第一金属層の膜厚が、5nm以下であることを特徴とする窒化物系半導体発光素子。 - 請求項1に記載の窒化物系半導体発光素子であって、
前記第一金属層は、前記Rhを70wt%以上含むことを特徴とする窒化物系半導体発光素子。 - 請求項1又は2に記載の窒化物系半導体発光素子であって、
前記第二金属層はさらに、Ptよりも前記窒化物系半導体発光素子の発光ピーク波長における反射率が高い第二金属材料を含むことを特徴とする窒化物系半導体発光素子。 - 請求項3に記載の窒化物系半導体発光素子であって、
前記第二金属材料が、Rhであることを特徴とする窒化物系半導体発光素子。 - 請求項1から4のいずれか一に記載の窒化物系半導体発光素子であって、
前記第一金属層のCrとRhとが少なくとも部分的に合金化されてなることを特徴とする窒化物系半導体発光素子。 - 請求項1から5のいずれか一に記載の窒化物系半導体発光素子であって、
前記電極構造は、さらに前記第二金属層上に配置されるボンディング層を含み、
前記ボンディング層がAuを含んでなることを特徴とする窒化物系半導体発光素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012547734A JP5780242B2 (ja) | 2010-12-08 | 2011-10-13 | 窒化物系半導体発光素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2010274125 | 2010-12-08 | ||
JP2010274125 | 2010-12-08 | ||
JP2012547734A JP5780242B2 (ja) | 2010-12-08 | 2011-10-13 | 窒化物系半導体発光素子 |
PCT/JP2011/073583 WO2012077407A1 (ja) | 2010-12-08 | 2011-10-13 | 窒化物系半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012077407A1 JPWO2012077407A1 (ja) | 2014-05-19 |
JP5780242B2 true JP5780242B2 (ja) | 2015-09-16 |
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Family Applications (1)
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JP2012547734A Active JP5780242B2 (ja) | 2010-12-08 | 2011-10-13 | 窒化物系半導体発光素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9000469B2 (ja) |
EP (1) | EP2650933B1 (ja) |
JP (1) | JP5780242B2 (ja) |
CN (1) | CN103238223B (ja) |
BR (1) | BR112013014356B1 (ja) |
TW (1) | TWI569468B (ja) |
WO (1) | WO2012077407A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2757598B1 (en) | 2011-09-16 | 2017-04-26 | Seoul Viosys Co., Ltd. | Light emitting diode |
JP5888132B2 (ja) * | 2012-06-08 | 2016-03-16 | 豊田合成株式会社 | 発光装置の製造方法 |
CN103367590A (zh) * | 2013-07-08 | 2013-10-23 | 安徽三安光电有限公司 | 一种氮化镓基发光二极管及其制作方法 |
JP6136701B2 (ja) | 2013-07-24 | 2017-05-31 | 日亜化学工業株式会社 | 発光装置 |
CN106252470B (zh) * | 2016-08-30 | 2018-08-14 | 厦门市三安光电科技有限公司 | 一种氮化镓基发光二极管及其制作方法 |
CN106410007B (zh) * | 2016-09-22 | 2019-07-19 | 佛山市国星半导体技术有限公司 | 一种双层电极led芯片及其制作方法 |
CN108538998B (zh) * | 2018-03-30 | 2021-02-23 | 扬州乾照光电有限公司 | 一种led芯片及其制作方法 |
CN113540303A (zh) * | 2019-11-15 | 2021-10-22 | 厦门三安光电有限公司 | 一种发光二极管及其制作方法 |
DE212021000447U1 (de) * | 2020-10-23 | 2023-05-15 | Shenzhen Jufei Optoelectronics Co., Ltd. | Lichtquellenanordnung, LED-Vorrichtung mit Lichtquellenanordnung, Anzeigevorrichtung und Hintergrundbeleuchtungsmodul |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005197670A (ja) * | 2003-12-10 | 2005-07-21 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子およびその負極 |
JP2006041133A (ja) * | 2004-07-26 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 発光装置 |
JP2006324511A (ja) * | 2005-05-19 | 2006-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
WO2008154573A1 (en) * | 2007-06-12 | 2008-12-18 | Semileds Corporation | Vertical led with current guiding structure |
WO2009091194A2 (ko) * | 2008-01-16 | 2009-07-23 | Lg Innotek Co., Ltd | 발광장치 |
JP2010028100A (ja) * | 2008-06-16 | 2010-02-04 | Showa Denko Kk | 半導体発光素子、その電極並びに製造方法及びランプ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4099989B2 (ja) | 2001-11-22 | 2008-06-11 | 日亜化学工業株式会社 | n型窒化物半導体の電極形成方法 |
DE10244200A1 (de) * | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US7452740B2 (en) | 2003-12-10 | 2008-11-18 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof |
KR100585919B1 (ko) * | 2004-01-15 | 2006-06-01 | 학교법인 포항공과대학교 | 질화갈륨계 ⅲⅴ족 화합물 반도체 소자 및 그 제조방법 |
WO2006116030A2 (en) * | 2005-04-21 | 2006-11-02 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
JP2007184411A (ja) * | 2006-01-06 | 2007-07-19 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
TWI366291B (en) | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
JP2009049267A (ja) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP5522032B2 (ja) * | 2008-03-13 | 2014-06-18 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
US8569735B2 (en) * | 2008-06-16 | 2013-10-29 | Toyoda Gosei Co., Ltd. | Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp |
JP5178383B2 (ja) | 2008-08-01 | 2013-04-10 | 昭和電工株式会社 | 半導体発光素子及び半導体発光素子の製造方法、ランプ |
WO2009154191A1 (ja) * | 2008-06-16 | 2009-12-23 | 昭和電工株式会社 | 半導体発光素子、その電極並びに製造方法及びランプ |
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2011
- 2011-10-13 CN CN201180058567.9A patent/CN103238223B/zh active Active
- 2011-10-13 WO PCT/JP2011/073583 patent/WO2012077407A1/ja active Application Filing
- 2011-10-13 JP JP2012547734A patent/JP5780242B2/ja active Active
- 2011-10-13 EP EP11846764.6A patent/EP2650933B1/en active Active
- 2011-10-13 US US13/991,903 patent/US9000469B2/en active Active
- 2011-10-13 BR BR112013014356-8A patent/BR112013014356B1/pt active IP Right Grant
- 2011-11-10 TW TW100141088A patent/TWI569468B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005197670A (ja) * | 2003-12-10 | 2005-07-21 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子およびその負極 |
JP2006041133A (ja) * | 2004-07-26 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 発光装置 |
JP2006324511A (ja) * | 2005-05-19 | 2006-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
WO2008154573A1 (en) * | 2007-06-12 | 2008-12-18 | Semileds Corporation | Vertical led with current guiding structure |
WO2009091194A2 (ko) * | 2008-01-16 | 2009-07-23 | Lg Innotek Co., Ltd | 발광장치 |
JP2010028100A (ja) * | 2008-06-16 | 2010-02-04 | Showa Denko Kk | 半導体発光素子、その電極並びに製造方法及びランプ |
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TWI569468B (zh) | 2017-02-01 |
EP2650933A1 (en) | 2013-10-16 |
WO2012077407A1 (ja) | 2012-06-14 |
US9000469B2 (en) | 2015-04-07 |
JPWO2012077407A1 (ja) | 2014-05-19 |
EP2650933B1 (en) | 2020-06-17 |
TW201232823A (en) | 2012-08-01 |
EP2650933A4 (en) | 2015-04-15 |
US20130256732A1 (en) | 2013-10-03 |
CN103238223B (zh) | 2017-03-01 |
BR112013014356A2 (pt) | 2016-09-27 |
CN103238223A (zh) | 2013-08-07 |
BR112013014356B1 (pt) | 2021-01-12 |
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