JP5773317B2 - マスクおよび装置 - Google Patents
マスクおよび装置 Download PDFInfo
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- JP5773317B2 JP5773317B2 JP2012504867A JP2012504867A JP5773317B2 JP 5773317 B2 JP5773317 B2 JP 5773317B2 JP 2012504867 A JP2012504867 A JP 2012504867A JP 2012504867 A JP2012504867 A JP 2012504867A JP 5773317 B2 JP5773317 B2 JP 5773317B2
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- 239000000758 substrate Substances 0.000 claims description 149
- 238000010884 ion-beam technique Methods 0.000 claims description 146
- 150000002500 ions Chemical class 0.000 claims description 57
- 238000005468 ion implantation Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 51
- 239000002019 doping agent Substances 0.000 description 47
- 238000012545 processing Methods 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 19
- 125000006850 spacer group Chemical group 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Element Separation (AREA)
Description
Claims (17)
- 基板にイオンを注入する際に用いられるマスクであって、
前記マスクの対辺に配される第1のベース部および第2のベース部と、
互いに離間して配され、1以上の隙間を形成し、前記第1のベース部に支持される第1の複数のフィンガー部と、
互いに離間して配され、1以上の隙間を形成し、前記第2のベース部に支持される第2の複数のフィンガー部と、
前記第1の複数のフィンガー部および前記第2の複数のフィンガー部に隣接して、対辺上に配される第3のベース部および第4のベース部と
を備え、
互いに離間して配された前記第1のベース部と前記第2のベース部とによって、開口が規定され、
前記第1の複数のフィンガー部によって、または前記第2の複数のフィンガー部によって画定された1以上の隙間をイオンビームが通過することにより、選択的な注入が実行され、前記開口を前記イオンビームが通過することにより、ブランケット注入が実行されるマスク。 - 前記第1の複数のフィンガー部のそれぞれは、第1の端部および第2の端部を有し、
前記第1の端部は、前記第1のベース部上に配される、
請求項1に記載のマスク。 - 前記第1の複数のフィンガー部の前記第2の端部は、支持されていない、
請求項2に記載のマスク。 - 前記マスクは、石英、グラファイト、サファイア、シリコン、炭化シリコンおよび窒化シリコンから選択される少なくとも1つの材料を含む、
請求項1から3のいずれか一項に記載のマスク。 - 基板にイオンを注入する装置であって、
目的とする種のイオンを含むイオンビームを発生させるイオン源と、
前記基板を収容するエンドステーションと、
前記イオン源および前記基板の間に配されるマスクと、
を備え、
前記基板および前記マスクの一方は、前記基板および前記マスクの他方に対して移動するように構成され、
前記イオンビームは、互いに近接した第1の部分および第2の部分を含み、
前記マスクは、1以上の隙間を含み、
前記イオンビームの前記第1の部分からのイオンの部分が、前記1以上の隙間を通過し、選択的なイオン注入を実施するために、前記第1の部分からの前記イオンの前記部分が前記基板に注入され、ブランケット・イオン注入を実施するために、前記イオンビームの前記第2の部分からのイオンが前記基板に注入されるように、前記マスクは、前記イオンビームの前記第1の部分の軌道中に配される
装置。 - 前記マスクは、前記イオンビームに対して特定の位置に位置決めされる、
請求項5に記載の装置。 - 前記マスクは、前記基板の全高よりも短い、
請求項5または6に記載の装置。 - 前記マスクは、互いに離間して配され、前記1以上の隙間を形成する複数のフィンガー部を有し、
前記複数のフィンガー部は、前記イオンビームの前記第1の部分の軌道中に配される、
請求項5に記載の装置。 - 前記複数のフィンガー部は、前記イオンビームの前記第2の部分の軌道中に配されない、
請求項8に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さに等しい、
請求項5から9のいずれか一項に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さより大きい、
請求項5から9のいずれか一項に記載の装置。 - 前記イオンビームの前記第1の部分の高さと、前記イオンビームの前記第2の部分の高さとの比は、3:2である、
請求項11に記載の装置。 - 前記イオンビームの前記第1の部分の高さは、前記イオンビームの前記第2の部分の高さより小さい、
請求項5から9のいずれか一項に記載の装置。 - 前記イオンビームの前記第1の部分の高さと、前記イオンビームの前記第2の部分の高さとの比は、2:3である、
請求項13に記載の装置。 - 基板にイオンを注入する装置であって、
目的とする種のイオンを含むイオンビームを発生させるイオン源と、
前記基板を収容するエンドステーションと、
前記イオン源および前記基板の間に配されるマスクと、
を備え、
前記マスクは、互いに離間して配され、1以上の隙間を形成する複数のフィンガー部を有し、
前記複数のフィンガー部の高さ方向の長さは、前記イオンビームの全高よりも短い、
装置。 - 前記マスクおよび前記基板の少なくとも一方が、前記マスクおよび前記基板の他方に対して移動させられる、
請求項15に記載の装置。 - 前記イオンビームは、前記イオンビームの対辺に配される第1の部分および第2の部分を含み、
前記イオンビームの前記第1の部分からのイオンが、前記基板上でブランケット・イオン注入を実施し、前記イオンビームの前記第2の部分からのイオンが、前記基板上で選択的なイオン注入を実施するように構成される、
請求項15または16に記載の装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16755009P | 2009-04-08 | 2009-04-08 | |
US61/167,550 | 2009-04-08 | ||
US12/756,020 US9006688B2 (en) | 2009-04-08 | 2010-04-07 | Techniques for processing a substrate using a mask |
US12/756,020 | 2010-04-07 | ||
PCT/US2010/030400 WO2010118237A2 (en) | 2009-04-08 | 2010-04-08 | Techniques for processing a substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012523708A JP2012523708A (ja) | 2012-10-04 |
JP2012523708A5 JP2012523708A5 (ja) | 2014-08-14 |
JP5773317B2 true JP5773317B2 (ja) | 2015-09-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012504867A Expired - Fee Related JP5773317B2 (ja) | 2009-04-08 | 2010-04-08 | マスクおよび装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9006688B2 (ja) |
EP (1) | EP2417624A4 (ja) |
JP (1) | JP5773317B2 (ja) |
KR (1) | KR101661235B1 (ja) |
CN (1) | CN102428541B (ja) |
TW (1) | TWI556341B (ja) |
WO (1) | WO2010118237A2 (ja) |
Families Citing this family (9)
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US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
US8071418B2 (en) * | 2010-06-03 | 2011-12-06 | Suniva, Inc. | Selective emitter solar cells formed by a hybrid diffusion and ion implantation process |
US20110139231A1 (en) * | 2010-08-25 | 2011-06-16 | Daniel Meier | Back junction solar cell with selective front surface field |
US8461556B2 (en) | 2010-09-08 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Using beam blockers to perform a patterned implant of a workpiece |
CN102891207A (zh) * | 2011-07-19 | 2013-01-23 | 上海凯世通半导体有限公司 | 用于太阳能晶片掺杂的束流传输*** |
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-
2010
- 2010-04-07 US US12/756,020 patent/US9006688B2/en active Active
- 2010-04-08 JP JP2012504867A patent/JP5773317B2/ja not_active Expired - Fee Related
- 2010-04-08 KR KR1020117026027A patent/KR101661235B1/ko active IP Right Grant
- 2010-04-08 CN CN201080019578.1A patent/CN102428541B/zh not_active Expired - Fee Related
- 2010-04-08 TW TW099110887A patent/TWI556341B/zh not_active IP Right Cessation
- 2010-04-08 EP EP20100762442 patent/EP2417624A4/en not_active Withdrawn
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CN102428541B (zh) | 2016-04-13 |
JP2012523708A (ja) | 2012-10-04 |
WO2010118237A3 (en) | 2011-01-13 |
EP2417624A4 (en) | 2012-12-26 |
CN102428541A (zh) | 2012-04-25 |
TW201101404A (en) | 2011-01-01 |
US9006688B2 (en) | 2015-04-14 |
EP2417624A2 (en) | 2012-02-15 |
WO2010118237A2 (en) | 2010-10-14 |
KR101661235B1 (ko) | 2016-09-29 |
TWI556341B (zh) | 2016-11-01 |
US20110089342A1 (en) | 2011-04-21 |
KR20120006529A (ko) | 2012-01-18 |
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