JP5771187B2 - 基板処理技術 - Google Patents
基板処理技術 Download PDFInfo
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- JP5771187B2 JP5771187B2 JP2012504863A JP2012504863A JP5771187B2 JP 5771187 B2 JP5771187 B2 JP 5771187B2 JP 2012504863 A JP2012504863 A JP 2012504863A JP 2012504863 A JP2012504863 A JP 2012504863A JP 5771187 B2 JP5771187 B2 JP 5771187B2
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- 239000000758 substrate Substances 0.000 title claims description 149
- 238000012545 processing Methods 0.000 title description 24
- 238000010884 ion-beam technique Methods 0.000 claims description 196
- 238000000034 method Methods 0.000 claims description 93
- 150000002500 ions Chemical class 0.000 claims description 66
- 238000005468 ion implantation Methods 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 description 46
- 125000006850 spacer group Chemical group 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000001133 acceleration Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- -1 boron ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Photovoltaic Devices (AREA)
Description
本実施形態において、基板500及びマスク650を、イオン注入システム内に設けることができる。その後、イオンビーム30を基板500に向けて指向させることができる。本実施形態において、イオンビーム30に対する基板500の平行移動を不要とし得るように、矢印510で示す方向に沿ったイオンビーム30の高さを、十分に大きくすることができる。言い換えれば、注入されるべき基板500内の領域をイオンビーム30の高さにより包囲し得るとともに、基板500及びイオンビーム30の一方を他方に対して平行移動させる必要が無いほど、イオンビーム30の高さは、十分に大きい。
Claims (22)
- 基板の処理方法において、
複数のイオンを含むイオンビームを、イオンビーム経路に沿ってイオン源から前記基板に向けて指向させるステップであって、前記イオンビームは、高さ方向に沿って設けた第1部及び第2部を備えている、ステップと、
前記イオンビーム経路内で、前記イオン源と前記基板との間に、マスクの少なくとも一部分を設けるステップと、
を含み、
前記マスクの前記少なくとも一部分を、前記イオンビームの高さ方向に延在させるとともに、前記イオンビームの第1部の経路内に設け、
前記マスクの前記少なくとも一部分を、前記イオンビームの前記第2部の経路内に設けないようにし、
さらに、前記イオンビームの前記第1部からのイオンを用いて選択的イオン注入を行い、前記イオンビームの前記第2部からのイオンを用いてブランケットイオン注入を行うステップと、
前記基板及び前記マスクのうち一方を、該基板及び該マスクのうち他方に対して、前記高さ方向に沿って平行移動させるステップと、
を含む、方法。 - 請求項1に記載の方法において、
前記マスクを、前記イオンビームに対して固定配置する方法。 - 請求項1に記載の方法において、
前記マスクは、互いに離間した複数のフィンガーを備え、少なくとも1つのギャップを規定し、
前記イオンビームの前記第1部からのイオンの一部を、前記マスクの前記少なくとも1つのギャップを通過させ、前記基板に注入して、選択的イオン注入を行う方法。 - 請求項3に記載の方法において、
前記マスクは、前記複数のフィンガーを支持するベースを備えている方法。 - 請求項1に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さにほぼ等しくする方法。 - 請求項1に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さよりも大きくする方法。 - 請求項6に記載の方法において、
前記イオンビームの前記第1部の高さと前記イオンビームの前記第2部の高さとの比を、3:2とする方法。 - 請求項1に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さより小さくする方法。 - 請求項8に記載の方法において、
前記イオンビームの前記第1部の高さと前記イオンビームの前記第2部の高さとの比を、2:3とする方法。 - 基板の処理方法において、
イオンビームをイオン源から前記基板に向けてイオンビーム経路に沿って指向させるステップであって、該イオンビームは複数のイオンを含む、ステップと、
前記イオン源と前記基板との間で前記イオンビーム経路内にマスクを設けるステップであって、前記マスクの少なくとも一部分を、前記イオンビームの全体高さの一部のみに亘って前記イオンビームの高さ方向に延在させている、ステップと、
を含み、
前記イオンビームは、第1部及び第2部を有し、
前記マスクの前記少なくとも一部分を、前記イオンビームの前記第1部の経路内に設け、
前記マスクの前記少なくとも一部分を、前記イオンビームの前記第2部の経路内に設けないようにし、
前記マスクは、互いに離間した複数のフィンガーを備え、1つ以上のギャップを規定し、
前記イオンビームの前記第1部からのイオンの一部を、前記フィンガーにより規定した前記1つ以上のギャップを通過させる方法。 - 請求項10に記載の方法において、
前記マスク及び前記イオンビームを、相対的に固定配置する方法。 - 請求項10に記載の方法において、
前記マスク及び前記基板のうち少なくともいずれか一方を、前記マスク及び前記基板のうち他方に対して、平行移動させるステップを、さらに含む方法。 - 請求項10に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さにほぼ等しくする方法。 - 請求項10に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さより大きくする方法。 - 請求項14に記載の方法において、
前記イオンビームの前記第1部の高さと前記イオンビームの前記第2部の高さとの比を、3:2とする方法。 - 請求項10に記載の方法において、
前記イオンビームの前記第1部の高さを、前記イオンビームの前記第2部の高さより小さくする方法。 - 請求項16に記載の方法において、
前記イオンビームの前記第1部の高さと前記イオンビームの前記第2部の高さとの比を、2:3とする方法。 - 請求項10に記載の方法において、
前記イオンビームの前記第1部からのイオンを用いて選択的イオン注入を行い、前記イオンビームの前記第2部からのイオンを用いてブランケットイオン注入を行う方法。 - 基板の処理方法において、
複数のイオンを含むイオンビームをイオンビーム経路に沿って指向させるステップと、
前記イオンビームの第1部からのイオンを用いて前記基板に対してブランケットイオン注入を行い、前記イオンビームの第2部からのイオンを用いて前記基板に対して選択的イオン注入を行うステップであって、前記第1部及び前記第2部を前記イオンビームの互いに対向する側に配置している、実行ステップと、
を含む方法。 - 請求項19に記載の方法において、
前記実行ステップは、前記イオンビームの前記第1部の経路内にマスクの少なくとも一部分を設けずに、前記イオンビームの前記第2部の経路内に前記マスクの前記少なくとも一部分を設けることを含む方法。 - 請求項20に記載の方法において、
前記選択的イオン注入を、前記イオンビームの前記第1部の幅方向に設けられた1つ以上のギャップを通過するイオンを用いて行う方法。 - 請求項21に記載の方法において、
前記イオンビーム及び前記マスクを固定配置するステップと、
前記マスク及び前記基板のうち一方を、該マスク及び該基板のうち他方に対して平行移動させるステップと、
を含む方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US16755009P | 2009-04-08 | 2009-04-08 | |
US61/167,550 | 2009-04-08 | ||
US12/756,026 US9076914B2 (en) | 2009-04-08 | 2010-04-07 | Techniques for processing a substrate |
US12/756,026 | 2010-04-07 | ||
PCT/US2010/030391 WO2010118231A2 (en) | 2009-04-08 | 2010-04-08 | Techniques for processing a substrate |
Publications (3)
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JP2012523669A JP2012523669A (ja) | 2012-10-04 |
JP2012523669A5 JP2012523669A5 (ja) | 2013-05-30 |
JP5771187B2 true JP5771187B2 (ja) | 2015-08-26 |
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JP2012504863A Expired - Fee Related JP5771187B2 (ja) | 2009-04-08 | 2010-04-08 | 基板処理技術 |
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US (1) | US9076914B2 (ja) |
EP (3) | EP2642513A3 (ja) |
JP (1) | JP5771187B2 (ja) |
KR (1) | KR101607619B1 (ja) |
CN (1) | CN102428543B (ja) |
TW (1) | TWI508143B (ja) |
WO (1) | WO2010118231A2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US9006688B2 (en) * | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
US20110027463A1 (en) * | 2009-06-16 | 2011-02-03 | Varian Semiconductor Equipment Associates, Inc. | Workpiece handling system |
US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
US8071418B2 (en) * | 2010-06-03 | 2011-12-06 | Suniva, Inc. | Selective emitter solar cells formed by a hybrid diffusion and ion implantation process |
US20110139231A1 (en) * | 2010-08-25 | 2011-06-16 | Daniel Meier | Back junction solar cell with selective front surface field |
US8461556B2 (en) * | 2010-09-08 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Using beam blockers to perform a patterned implant of a workpiece |
US20120056107A1 (en) * | 2010-09-08 | 2012-03-08 | Varian Semiconductor Equipment Associates, Inc. | Uniformity control using ion beam blockers |
CN102969214B (zh) * | 2011-08-31 | 2017-08-25 | 圆益Ips股份有限公司 | 基板处理装置及具有其的基板处理*** |
FR3003687B1 (fr) * | 2013-03-20 | 2015-07-17 | Mpo Energy | Procede de dopage de plaques de silicium |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2591842A (en) | 1949-07-06 | 1952-04-08 | Bell Telephone Labor Inc | Electron discharge apparatus |
US4086102A (en) | 1976-12-13 | 1978-04-25 | King William J | Inexpensive solar cell and method therefor |
EP0203215B1 (de) | 1985-05-29 | 1990-02-21 | Ibm Deutschland Gmbh | Verfahren zur Reparatur von Transmissionsmasken |
JPS63136618A (ja) | 1986-11-28 | 1988-06-08 | Sony Corp | エネルギ−照射方法 |
JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
JPH0528956A (ja) * | 1991-07-20 | 1993-02-05 | Nissin High Voltage Co Ltd | イオン注入装置 |
US5369282A (en) | 1992-08-03 | 1994-11-29 | Fujitsu Limited | Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput |
US5468595A (en) * | 1993-01-29 | 1995-11-21 | Electron Vision Corporation | Method for three-dimensional control of solubility properties of resist layers |
US5523576A (en) | 1993-03-15 | 1996-06-04 | Kabushiki Kaisha Toshiba | Charged beam drawing apparatus |
JPH08213339A (ja) | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JP3504426B2 (ja) | 1995-03-17 | 2004-03-08 | 株式会社荏原製作所 | エネルギービームによる処理方法および処理装置 |
EP0732624B1 (en) * | 1995-03-17 | 2001-10-10 | Ebara Corporation | Fabrication method with energy beam |
US6429440B1 (en) * | 1998-06-16 | 2002-08-06 | Asml Netherlands B.V. | Lithography apparatus having a dynamically variable illumination beam |
JP3353064B2 (ja) | 2000-02-17 | 2002-12-03 | 独立行政法人物質・材料研究機構 | イオン注入装置および方法 |
JP2002203806A (ja) | 2000-10-31 | 2002-07-19 | Toshiba Corp | 半導体装置の製造方法、ステンシルマスク及びその製造方法 |
WO2002043803A1 (en) | 2000-11-30 | 2002-06-06 | Semequip, Inc. | Ion implantation system and control method |
JP4252237B2 (ja) * | 2000-12-06 | 2009-04-08 | 株式会社アルバック | イオン注入装置およびイオン注入方法 |
JP2002202585A (ja) | 2000-12-27 | 2002-07-19 | Hitachi Ltd | フォトマスクの製造方法および半導体集積回路装置の製造方法 |
FR2823005B1 (fr) * | 2001-03-28 | 2003-05-16 | Centre Nat Rech Scient | Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau |
JP3674573B2 (ja) | 2001-06-08 | 2005-07-20 | ソニー株式会社 | マスクおよびその製造方法と半導体装置の製造方法 |
US20030089863A1 (en) | 2001-10-02 | 2003-05-15 | Nikon Corporation | Beam-calibration methods for charged-particle-beam microlithography systems |
CN1223899C (zh) * | 2002-04-03 | 2005-10-19 | 台湾积体电路制造股份有限公司 | 可装设数块光罩的光罩支架及微影曝光*** |
US7288466B2 (en) * | 2002-05-14 | 2007-10-30 | Kabushiki Kaisha Toshiba | Processing method, manufacturing method of semiconductor device, and processing apparatus |
JP4443816B2 (ja) | 2002-09-06 | 2010-03-31 | シャープ株式会社 | イオンドーピング装置及びイオンドーピング装置用多孔電極 |
JP2004207385A (ja) | 2002-12-24 | 2004-07-22 | Rohm Co Ltd | マスク、その製造方法およびこれを用いた半導体装置の製造方法 |
JP2004207571A (ja) | 2002-12-26 | 2004-07-22 | Toshiba Corp | 半導体装置の製造方法、半導体製造装置及びステンシルマスク |
KR100454846B1 (ko) | 2002-12-27 | 2004-11-03 | 엘지.필립스 엘시디 주식회사 | 배향막을 형성하기 위한 이온 빔 조사 장치 |
US6677598B1 (en) | 2003-04-29 | 2004-01-13 | Axcelis Technologies, Inc. | Beam uniformity and angular distribution measurement system |
JP2004348118A (ja) | 2003-04-30 | 2004-12-09 | Toshiba Corp | フォトマスク及びそれを用いた露光方法、データ発生方法 |
JP4112472B2 (ja) | 2003-10-21 | 2008-07-02 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置の製造装置 |
US7012022B2 (en) * | 2003-10-30 | 2006-03-14 | Chartered Semiconductor Manufacturing Ltd. | Self-patterning of photo-active dielectric materials for interconnect isolation |
JP2006024624A (ja) * | 2004-07-06 | 2006-01-26 | Toshiba Corp | 荷電ビーム描画装置およびアパーチャ調整方法 |
US7799517B1 (en) | 2004-08-31 | 2010-09-21 | Globalfoundries Inc. | Single/double dipole mask for contact holes |
DE102004052994C5 (de) | 2004-11-03 | 2010-08-26 | Vistec Electron Beam Gmbh | Multistrahlmodulator für einen Partikelstrahl und Verwendung des Multistrahlmodulators zur maskenlosen Substratsstrukturierung |
US7576341B2 (en) * | 2004-12-08 | 2009-08-18 | Samsung Electronics Co., Ltd. | Lithography systems and methods for operating the same |
US7394070B2 (en) | 2004-12-27 | 2008-07-01 | Hitachi High-Technologies Corporation | Method and apparatus for inspecting patterns |
US20060258128A1 (en) | 2005-03-09 | 2006-11-16 | Peter Nunan | Methods and apparatus for enabling multiple process steps on a single substrate |
US7670956B2 (en) | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
JP2009500858A (ja) * | 2005-07-08 | 2009-01-08 | ネクスジェン・セミ・ホールディング・インコーポレーテッド | 制御された粒子ビームを生成するための装置及び方法 |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
JP2007115999A (ja) | 2005-10-21 | 2007-05-10 | Toshiba Corp | キャラクタプロジェクション(cp)方式の荷電粒子ビーム露光方法、キャラクタプロジェクション方式の荷電粒子ビーム露光装置及びプログラム |
JP4901203B2 (ja) | 2005-12-12 | 2012-03-21 | 東芝モバイルディスプレイ株式会社 | イオンビームの照射方法及び薄膜トランジスタをもつ基板の製造装置 |
KR100732770B1 (ko) | 2006-02-13 | 2007-06-27 | 주식회사 하이닉스반도체 | 불균일 이온 주입 장비 및 방법 |
JP4882456B2 (ja) | 2006-03-31 | 2012-02-22 | 株式会社Ihi | イオン注入装置 |
JP2007287973A (ja) | 2006-04-18 | 2007-11-01 | Toyota Motor Corp | ステンシルマスクとその利用方法とそれを利用する荷電粒子注入装置 |
US7528391B2 (en) * | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
KR20080062737A (ko) | 2006-12-29 | 2008-07-03 | 주식회사 하이닉스반도체 | 영역분할마스크를 이용한 이온주입방법 |
WO2009029900A1 (en) | 2007-08-31 | 2009-03-05 | Applied Materials, Inc. | Improved methods of emitter formation in solar cells |
US7820460B2 (en) | 2007-09-07 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Patterned assembly for manufacturing a solar cell and a method thereof |
US20090142875A1 (en) | 2007-11-30 | 2009-06-04 | Applied Materials, Inc. | Method of making an improved selective emitter for silicon solar cells |
US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
US7727866B2 (en) | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
EP2308060A4 (en) | 2008-06-11 | 2013-10-16 | Intevac Inc | APPLICATION-SPECIFIC IMPLANT SYSTEM AND METHOD FOR USE IN SOLAR CELL MANUFACTURE |
US8202789B2 (en) | 2008-09-10 | 2012-06-19 | Varian Semiconductor Equipment Associates, Inc. | Implanting a solar cell substrate using a mask |
US7816239B2 (en) | 2008-11-20 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Technique for manufacturing a solar cell |
US9006688B2 (en) | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
US8900982B2 (en) | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US8330128B2 (en) | 2009-04-17 | 2012-12-11 | Varian Semiconductor Equipment Associates, Inc. | Implant mask with moveable hinged mask segments |
-
2010
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- 2010-04-08 JP JP2012504863A patent/JP5771187B2/ja not_active Expired - Fee Related
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- 2010-04-08 EP EP13172471.8A patent/EP2642513A3/en not_active Withdrawn
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- 2010-04-08 WO PCT/US2010/030391 patent/WO2010118231A2/en active Application Filing
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EP2642512A2 (en) | 2013-09-25 |
TWI508143B (zh) | 2015-11-11 |
US9076914B2 (en) | 2015-07-07 |
WO2010118231A2 (en) | 2010-10-14 |
EP2642513A2 (en) | 2013-09-25 |
EP2642512A3 (en) | 2014-03-19 |
EP2642513A3 (en) | 2014-03-19 |
WO2010118231A3 (en) | 2011-01-20 |
CN102428543B (zh) | 2016-02-24 |
KR20120016224A (ko) | 2012-02-23 |
JP2012523669A (ja) | 2012-10-04 |
EP2417622A4 (en) | 2012-12-26 |
US20110089343A1 (en) | 2011-04-21 |
CN102428543A (zh) | 2012-04-25 |
TW201101374A (en) | 2011-01-01 |
EP2417622A2 (en) | 2012-02-15 |
KR101607619B1 (ko) | 2016-03-30 |
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