JP5772491B2 - エピタキシャルウエーハ及びその製造方法 - Google Patents

エピタキシャルウエーハ及びその製造方法 Download PDF

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Publication number: JP5772491B2
Authority: JP; Japan
Prior art keywords: epitaxial layer; thickness; epitaxial; atoms; wafer
Prior art date: 2011-10-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2011230781A

Other languages

English (en)

Japanese (ja)

Other versions

JP2013089858A (ja

Inventor

星　亮二

亮二星

昌弘櫻田

布施川　泉

泉布施川

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Handotai Co Ltd

Original Assignee

Shin Etsu Handotai Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2011-10-20

Filing date

2011-10-20

Publication date

2015-09-02

2011-10-20 Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd

2011-10-20 Priority to JP2011230781A priority Critical patent/JP5772491B2/ja

2012-10-02 Priority to KR1020147010474A priority patent/KR102000457B1/ko

2012-10-02 Priority to DE112012003985.8T priority patent/DE112012003985B4/de

2012-10-02 Priority to PCT/JP2012/006298 priority patent/WO2013057887A1/ja

2012-10-02 Priority to US14/349,011 priority patent/US9425345B2/en

2012-10-19 Priority to TW101138713A priority patent/TWI523206B/zh

2013-05-13 Publication of JP2013089858A publication Critical patent/JP2013089858A/ja

2015-09-02 Application granted granted Critical

2015-09-02 Publication of JP5772491B2 publication Critical patent/JP5772491B2/ja

Status Active legal-status Critical Current

2031-10-20 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims description 78
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 119
239000001301 oxygen Substances 0.000 claims description 118
229910052760 oxygen Inorganic materials 0.000 claims description 118
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
229910052710 silicon Inorganic materials 0.000 claims description 103
239000010703 silicon Substances 0.000 claims description 103
238000003384 imaging method Methods 0.000 claims description 53
238000000034 method Methods 0.000 claims description 53
239000013078 crystal Substances 0.000 claims description 39
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
229910052799 carbon Inorganic materials 0.000 claims description 25
238000009792 diffusion process Methods 0.000 claims description 9
239000007787 solid Substances 0.000 claims description 4
235000012431 wafers Nutrition 0.000 description 93
125000004429 atom Chemical group 0.000 description 56
239000012535 impurity Substances 0.000 description 25
238000010438 heat treatment Methods 0.000 description 20
230000000694 effects Effects 0.000 description 17
230000002411 adverse Effects 0.000 description 14
238000004364 calculation method Methods 0.000 description 11
238000009826 distribution Methods 0.000 description 10
239000000969 carrier Substances 0.000 description 9
238000005247 gettering Methods 0.000 description 8
230000007423 decrease Effects 0.000 description 7
238000004088 simulation Methods 0.000 description 6
238000000149 argon plasma sintering Methods 0.000 description 5
230000000052 comparative effect Effects 0.000 description 5
230000007547 defect Effects 0.000 description 5
125000004430 oxygen atom Chemical group O* 0.000 description 5
239000002019 doping agent Substances 0.000 description 4
230000035945 sensitivity Effects 0.000 description 4
230000005856 abnormality Effects 0.000 description 3
125000004432 carbon atom Chemical group C* 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
229920005591 polysilicon Polymers 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000035515 penetration Effects 0.000 description 2
239000002244 precipitate Substances 0.000 description 2
239000010453 quartz Substances 0.000 description 2
238000005204 segregation Methods 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
239000006104 solid solution Substances 0.000 description 2
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208000037663 Best vitelliform macular dystrophy Diseases 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
238000004854 X-ray topography Methods 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
238000002109 crystal growth method Methods 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
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230000001771 impaired effect Effects 0.000 description 1
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230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
150000002926 oxygen Chemical class 0.000 description 1
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238000001556 precipitation Methods 0.000 description 1
239000000047 product Substances 0.000 description 1
239000002994 raw material Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
208000020938 vitelliform macular dystrophy 2 Diseases 0.000 description 1

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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/0257—Doping during depositing
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments

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Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Microelectronics & Electronic Packaging (AREA)
Chemical & Material Sciences (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
Manufacturing & Machinery (AREA)
Organic Chemistry (AREA)
Metallurgy (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Inorganic Chemistry (AREA)
Ceramic Engineering (AREA)
Solid State Image Pick-Up Elements (AREA)
Recrystallisation Techniques (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP2011230781A 2011-10-20 2011-10-20 エピタキシャルウエーハ及びその製造方法 Active JP5772491B2 (ja)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
JP2011230781A JP5772491B2 (ja)	2011-10-20	2011-10-20	エピタキシャルウエーハ及びその製造方法
KR1020147010474A KR102000457B1 (ko)	2011-10-20	2012-10-02	에피택셜 웨이퍼 및 그 제조방법
DE112012003985.8T DE112012003985B4 (de)	2011-10-20	2012-10-02	Epitaxialwafer und Herstellungsverfahren dafür
PCT/JP2012/006298 WO2013057887A1 (ja)	2011-10-20	2012-10-02	エピタキシャルウエーハ及びその製造方法
US14/349,011 US9425345B2 (en)	2011-10-20	2012-10-02	Epitaxial wafer and manufacturing method thereof
TW101138713A TWI523206B (zh)	2011-10-20	2012-10-19	Epitaxial wafer and its manufacturing method

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2011230781A JP5772491B2 (ja)	2011-10-20	2011-10-20	エピタキシャルウエーハ及びその製造方法

Publications (2)

Publication Number	Publication Date
JP2013089858A JP2013089858A (ja)	2013-05-13
JP5772491B2 true JP5772491B2 (ja)	2015-09-02

Family

ID=48140556

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2011230781A Active JP5772491B2 (ja)	2011-10-20	2011-10-20	エピタキシャルウエーハ及びその製造方法

Country Status (6)

Country	Link
US (1)	US9425345B2 (ko)
JP (1)	JP5772491B2 (ko)
KR (1)	KR102000457B1 (ko)
DE (1)	DE112012003985B4 (ko)
TW (1)	TWI523206B (ko)
WO (1)	WO2013057887A1 (ko)

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Publication number	Priority date	Publication date	Assignee	Title
JP6020342B2 (ja) *	2013-05-10	2016-11-02	信越半導体株式会社	シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
JP6442817B2 (ja) *	2013-08-20	2018-12-26	株式会社Sumco	エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
DE102014106594B4 (de)	2014-05-09	2022-05-05	Infineon Technologies Ag	Verfahren zum Herstellen eines Halbleiterbauelements
EP3113224B1 (en) *	2015-06-12	2020-07-08	Canon Kabushiki Kaisha	Imaging apparatus, method of manufacturing the same, and camera
JP6861471B2 (ja) *	2015-06-12	2021-04-21	キヤノン株式会社	撮像装置およびその製造方法ならびにカメラ
US10026843B2 (en)	2015-11-30	2018-07-17	Taiwan Semiconductor Manufacturing Co., Ltd.	Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device
JP6737066B2 (ja) *	2016-08-22	2020-08-05	株式会社Sumco	エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
JP6822375B2 (ja) *	2017-10-19	2021-01-27	信越半導体株式会社	シリコンエピタキシャルウエーハの製造方法
EP4137613A1 (de)	2021-08-18	2023-02-22	Siltronic AG	Verfahren zur herstellung einer epitaktisch beschichteten hableiterscheibe aus einkristallinem silizium
CN118043947A (zh)	2021-09-30	2024-05-14	信越半导体株式会社	外延片及其制造方法

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JPH0443646A (ja) *	1990-06-11	1992-02-13	Matsushita Electric Ind Co Ltd	半導体装置及びその製造方法
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JP3353277B2 (ja)	1992-09-25	2002-12-03	ソニー株式会社	エピタキシャルウェハの製造方法
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JP4656788B2 (ja) *	2001-11-19	2011-03-23	信越半導体株式会社	シリコンエピタキシャルウェーハの製造方法
JP4288406B2 (ja) *	2003-01-17	2009-07-01	株式会社ニコン	固体撮像装置の製造方法
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JP5401809B2 (ja)	2008-03-05	2014-01-29	株式会社Ｓｕｍｃｏ	シリコン基板とその製造方法
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JP5401808B2 (ja)	2008-03-05	2014-01-29	株式会社Ｓｕｍｃｏ	シリコン基板とその製造方法
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2011
- 2011-10-20 JP JP2011230781A patent/JP5772491B2/ja active Active
2012
- 2012-10-02 DE DE112012003985.8T patent/DE112012003985B4/de active Active
- 2012-10-02 US US14/349,011 patent/US9425345B2/en active Active
- 2012-10-02 WO PCT/JP2012/006298 patent/WO2013057887A1/ja active Application Filing
- 2012-10-02 KR KR1020147010474A patent/KR102000457B1/ko active IP Right Grant
- 2012-10-19 TW TW101138713A patent/TWI523206B/zh active

Also Published As

Publication number	Publication date
WO2013057887A1 (ja)	2013-04-25
KR20140084049A (ko)	2014-07-04
DE112012003985T5 (de)	2014-08-21
TWI523206B (zh)	2016-02-21
TW201340299A (zh)	2013-10-01
JP2013089858A (ja)	2013-05-13
US20140374861A1 (en)	2014-12-25
DE112012003985B4 (de)	2022-06-30
KR102000457B1 (ko)	2019-07-16
US9425345B2 (en)	2016-08-23

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