JP5746871B2 - Film forming apparatus and thin film forming method - Google Patents

Film forming apparatus and thin film forming method Download PDF

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JP5746871B2
JP5746871B2 JP2011010821A JP2011010821A JP5746871B2 JP 5746871 B2 JP5746871 B2 JP 5746871B2 JP 2011010821 A JP2011010821 A JP 2011010821A JP 2011010821 A JP2011010821 A JP 2011010821A JP 5746871 B2 JP5746871 B2 JP 5746871B2
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film
mask
shielding
substrate
forming
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JP2012149329A (en
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一新 楊
一新 楊
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Ulvac Inc
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Description

本発明は、成膜マスク及び成膜装置並びに薄膜の形成方法に関する。   The present invention relates to a film formation mask, a film formation apparatus, and a thin film formation method.

有機ＥＬ素子は、発光効率が高く、薄い発光装置を組み立てることができることから、近年では、表示装置や照明機器の用途に注目されており、所定のパターン形状の有機薄膜を大面積の基板に精密に成膜する技術が求められている。   Organic EL elements have high luminous efficiency and can assemble thin light-emitting devices. In recent years, organic EL elements have attracted attention for use in display devices and lighting equipment. Therefore, a technique for forming a film is required.

図１８は従来の成膜装置１１０の内部構成図である。
従来の成膜装置１１０は、真空槽１１１と、真空槽１１１内を真空排気する真空排気装置１１２と、真空槽１１１内に露出する放出口１１６から成膜物質を放出する放出装置１１５と、放出口１１６と対面する位置に配置された成膜マスク１２０とを有している。
成膜マスク１２０には複数の開口１２３が形成され、放出口１１６から放出された成膜物質が開口１２３を通過するようになっている。 FIG. 18 is an internal configuration diagram of a conventional film forming apparatus 110.
A conventional film forming apparatus 110 includes a vacuum chamber 111, a vacuum exhaust device 112 that evacuates the vacuum chamber 111, a discharge device 115 that discharges a film forming substance from a discharge port 116 exposed in the vacuum chamber 111, and a release chamber. The film forming mask 120 is disposed at a position facing the outlet 116.
A plurality of openings 123 are formed in the film formation mask 120 so that the film formation material discharged from the discharge port 116 passes through the openings 123.

上述の従来の成膜装置１１０を用いた薄膜の形成方法を説明する。
成膜マスク１２０から見て放出口１１６とは逆側に、成膜マスク１２０の一面と対面して基板１５０を配置する。
真空排気された真空槽１１１内に放出口１１６から成膜物質を放出させると、成膜物質は成膜マスク１２０の開口１２３を通過して、基板１５０の表面に付着し、基板１５０の表面に開口１２３と同じパターン形状の薄膜が形成される。 A method for forming a thin film using the conventional film forming apparatus 110 will be described.
A substrate 150 is disposed on the opposite side of the film formation mask 120 from the discharge port 116 so as to face one surface of the film formation mask 120.
When the film forming material is released from the discharge port 116 into the evacuated vacuum chamber 111, the film forming material passes through the opening 123 of the film forming mask 120 and adheres to the surface of the substrate 150. A thin film having the same pattern shape as the opening 123 is formed.

成膜中に放出装置１１５からの熱輻射を受けて成膜マスク１２０の温度が上昇すると、成膜マスク１２０に熱膨張が起こり、隣り合う開口１２３の間の間隔が広がって、基板１５０に形成される薄膜に位置ズレが生じる。そのため成膜中には成膜マスク１２０を冷却しておく必要がある。   When the temperature of the film formation mask 120 rises due to heat radiation from the emission device 115 during film formation, thermal expansion occurs in the film formation mask 120, and a space between adjacent openings 123 is widened to form the substrate 150. Misalignment occurs in the thin film. Therefore, it is necessary to cool the film formation mask 120 during film formation.

特許文献１では、成膜マスク１２０の表面の外周部分に、伝熱媒体が流れる補助流路部材１２６が密着して設けられ、補助流路部材１２６内に温度管理された伝熱媒体を流して、補助流路部材１２６からの熱伝導により成膜マスク１２０を冷却する技術が開示されている。   In Patent Document 1, an auxiliary flow path member 126 through which the heat transfer medium flows is provided in close contact with the outer peripheral portion of the surface of the film formation mask 120, and a temperature-controlled heat transfer medium flows through the auxiliary flow path member 126. A technique for cooling the deposition mask 120 by heat conduction from the auxiliary flow path member 126 is disclosed.

しかしながら、上記従来技術では、成膜マスク１２０の外周部分は冷却されるが、特に大型の成膜マスク１２０の場合には、成膜マスク１２０の中心部分は冷却されづらく、中心部分の熱膨張を抑制することは困難であった。
また成膜マスク１２０の中心部分を冷却するために補助流路部材１２６内に流す伝熱媒体の温度を下げると、成膜マスク１２０の外周部分で収縮が起こり、隣り合う開口１２３の間の間隔が縮まって、基板１５０に形成される薄膜に位置ズレが生じるという問題があった。 However, in the above prior art, the outer peripheral portion of the film formation mask 120 is cooled. However, particularly in the case of a large-sized film formation mask 120, the central portion of the film formation mask 120 is difficult to be cooled, and thermal expansion of the central portion is caused. It was difficult to suppress.
Further, when the temperature of the heat transfer medium flowing in the auxiliary flow path member 126 is lowered in order to cool the central portion of the film formation mask 120, the outer periphery of the film formation mask 120 contracts and the interval between the adjacent openings 123 is reduced. There is a problem that the position of the thin film formed on the substrate 150 is displaced due to shrinkage.

特開２００２−８８５９号公報JP 2002-8859 A

本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、成膜時の熱による変形を抑制できる成膜マスク及び成膜装置並びに薄膜の形成方法を提供することにある。   The present invention was created to solve the above-described disadvantages of the prior art, and an object thereof is to provide a film formation mask, a film formation apparatus, and a thin film formation method capable of suppressing deformation due to heat during film formation. It is in.

上記課題を解決するために本発明は、真空槽と、前記真空槽内を真空排気する真空排気装置と、前記真空槽内に露出する放出口から成膜物質を放出する放出装置と、前記放出口と対面する位置に配置された成膜マスクと、を有し、前記成膜マスクは、複数の開口が形成され、成膜物質が前記開口を通過する通過部と、前記成膜物質を遮蔽する遮蔽部と、を有する成膜マスクであって、前記通過部と前記遮蔽部とは長手方向を有し、前記遮蔽部の長手方向の長さは、前記通過部の長手方向の長さ以上にされ、前記遮蔽部の幅の長さは、前記通過部の幅の長さと同じに形成され、前記通過部と前記遮蔽部とは、前記成膜マスク表面と平行な一の移動方向に沿って長手方向を密着して並んで配置され、前記成膜マスクが前記一の移動方向の前記通過部側に前記通過部の幅の距離移動すると、前記開口が位置していた場所が、前記遮蔽部によって塞がれるように構成され、前記遮蔽部には内部に伝熱媒体が流れる流路部材が密着して設けられた成膜マスクであり、前記伝熱媒体を冷却又は加熱する恒温装置と、前記成膜マスクから見て前記放出口とは逆側に前記成膜マスクと対面して配置された基板と、前記成膜マスクとを前記一の移動方向に平行に相対移動させる移動装置と、前記通過部を前記基板の表面に密着させる密着装置と、を有し、前記通過部は、前記遮蔽部との間の熱伝導により、前記伝熱媒体と同じ温度に冷却又は加熱されるように構成された成膜装置である。
本発明は、真空槽と、前記真空槽内を真空排気する真空排気装置と、前記真空槽内に露出する放出口から成膜物質を放出する放出装置と、前記放出口と対面する位置に配置された成膜マスクと、を有し、前記成膜マスクは、複数の開口が形成され、成膜物質が前記開口を通過する通過部と、前記成膜物質を遮蔽する遮蔽部と、を有する成膜マスクであって、前記遮蔽部は複数の単位遮蔽部で構成され、前記通過部と前記単位遮蔽部とは長手方向を有し、前記単位遮蔽部の長手方向の長さは、前記通過部の長手方向の長さ以上にされ、前記単位遮蔽部の幅の長さは、前記通過部の幅の長さと同じに形成され、各前記単位遮蔽部は、前記成膜マスク表面と平行な一の移動方向に沿って一列に並んで配置され、隣り合う二つの前記単位遮蔽部は長手方向を密着され、前記単位遮蔽部の並びの一端に位置する一の前記単位遮蔽部と、前記通過部とは、前記一の移動方向に沿って長手方向を密着して並んで配置され、前記成膜マスクが前記一の移動方向の前記通過部側に前記通過部の幅の距離移動すると、前記開口が位置していた場所が、前記通過部に隣接する一の前記単位遮蔽部によって塞がれるように構成され、前記単位遮蔽部の少なくとも一個には内部に伝熱媒体が流れる流路部材が密着して設けられた成膜マスクであり、前記伝熱媒体を冷却又は加熱する恒温装置と、前記成膜マスクから見て前記放出口とは逆側に前記成膜マスクと対面して配置された基板と、前記成膜マスクとを前記一の移動方向に平行に相対移動させる移動装置と、前記通過部を前記基板の表面に密着させる密着装置と、を有し、前記通過部は、前記遮蔽部との間の熱伝導により、前記伝熱媒体と同じ温度に冷却又は加熱されるように構成された成膜装置である。
本発明は成膜装置であって、前記通過部と前記遮蔽部とをそれぞれ複数個有し、前記通過部と前記遮蔽部とは、前記一の移動方向に沿って一列に交互に並んで配置され、隣り合う前記通過部と前記遮蔽部は密着された成膜装置である。
本発明は成膜装置であって、前記通過部と前記遮蔽部の並びの一端と他端にはそれぞれ前記遮蔽部が配置された成膜装置である。
本発明は、真空排気された真空槽内に放出口から成膜物質を放出させ、前記放出口と対面する位置に配置された基板の表面に薄膜を形成する薄膜の形成方法であって、前記成膜装置を用いて、前記流路部材の内部に伝熱媒体を流しながら、前記成膜マスクを前記基板の表面と対面して密着させた状態で、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する一の成膜領域に薄膜を形成した後、密着を解除させ、移動前に前記通過部と対面して密着していた前記一の成膜領域が前記通過部に隣接する前記遮蔽部と対面するように、前記成膜マスクと前記基板とを前記一の移動方向に平行に前記通過部の幅の距離相対移動させ、前記成膜マスクを前記基板の表面と対面して密着させ、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する別の成膜領域に薄膜を形成する薄膜の形成方法である。
本発明は、真空排気された真空槽内に放出口から成膜物質を放出させ、前記放出口と対面する位置に配置された基板の表面に薄膜を形成する薄膜の形成方法であって、前記成膜装置を用いて、前記流路部材の内部に伝熱媒体を流しながら、前記成膜マスクを前記基板の表面と対面して密着させた状態で、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する一の成膜領域に薄膜を形成した後、密着を解除させ、移動前に前記通過部と対面して密着していた一の成膜領域が前記通過部に隣接する前記単位遮蔽部と対面して密着するように、前記成膜マスクと前記基板とを前記一の移動方向に平行に前記通過部の幅の距離相対移動させ、前記成膜マスクを前記基板の表面と対面して密着させ、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する別の成膜領域に薄膜を形成する工程を、一の前記遮蔽部が有する前記単位遮蔽部の数と同じ回数繰り返す薄膜の形成方法である。 In order to solve the above problems, the present invention provides a vacuum chamber, a vacuum exhaust device that evacuates the vacuum chamber, a discharge device that discharges a film-forming substance from a discharge port that is exposed in the vacuum chamber, and the release device. A film-forming mask disposed at a position facing the outlet, wherein the film-forming mask has a plurality of openings formed therein, a passage through which the film-forming substance passes through the opening, and the film-forming substance being shielded A passage portion and the shielding portion have a longitudinal direction, and the length of the shielding portion in the longitudinal direction is equal to or longer than the length of the passage portion in the longitudinal direction. The width of the shielding portion is formed to be the same as the width of the passage portion, and the passage portion and the shielding portion are along one movement direction parallel to the film formation mask surface. Arranged in close contact with each other in the longitudinal direction, and the film formation mask passes in the one moving direction. When the distance of the width of the passage portion is moved to the side, the location where the opening was located is configured to be blocked by the shielding portion, and a flow path member through which a heat transfer medium flows is provided in the shielding portion. A film-forming mask provided in close contact, and is arranged to face the film-forming mask on the opposite side of the discharge port as viewed from the film-forming mask and a thermostatic device for cooling or heating the heat transfer medium. A moving device for relatively moving the substrate and the film formation mask in parallel with the one moving direction, and a contact device for bringing the passage portion into close contact with the surface of the substrate. It is the film-forming apparatus comprised so that it might be cooled or heated to the same temperature as the said heat-transfer medium by heat conduction between shielding parts.
The present invention includes a vacuum chamber, a vacuum exhaust device that evacuates the vacuum chamber, a discharge device that discharges a film-forming substance from a discharge port exposed in the vacuum chamber, and a position facing the discharge port. The film formation mask has a plurality of openings, a passage portion through which the film formation material passes through the opening, and a shielding portion that shields the film formation material. It is a film-forming mask, The said shielding part is comprised by the several unit shielding part, The said passage part and the said unit shielding part have a longitudinal direction, The length of the longitudinal direction of the said unit shielding part is the said passage The width of the unit shielding part is formed to be the same as the width of the passage part, and each unit shielding part is parallel to the film forming mask surface. Arranged in a line along one moving direction, the two adjacent unit shielding parts are long One unit shielding part positioned at one end of the unit shielding part and the passing part are arranged in close contact with each other in the longitudinal direction along the one movement direction, When the film formation mask is moved a distance of the width of the passage portion toward the passage portion side in the one movement direction, the place where the opening is located is blocked by the one unit shielding portion adjacent to the passage portion. A thermostat that cools or heats the heat transfer medium, wherein at least one of the unit shielding portions is a film forming mask in which a flow path member through which the heat transfer medium flows is closely attached. A substrate disposed opposite to the film formation mask as viewed from the film formation mask and facing the film formation mask, and a moving device for relatively moving the film formation mask in parallel with the one movement direction; Adhering the passing part to the surface of the substrate It has a location, wherein the passage unit, by heat conduction between the shielding portion is configured film forming apparatus as cooled or heated to the same temperature as the heat transfer medium.
The present invention is a film forming apparatus , and includes a plurality of the passage portions and the shielding portions, and the passage portions and the shielding portions are alternately arranged in a line along the one movement direction. it is, in the shielding portion and the passage portion adjacent a contact depositions device.
The present invention provides a film deposition apparatus, to one end and the other end of alignment with the passage portion and the shielding portion is a film forming apparatus wherein the shield portion is arranged.
The present invention is a method for forming a thin film, wherein a film forming material is discharged from a discharge port into a vacuum evacuated vacuum chamber, and a thin film is formed on a surface of a substrate disposed at a position facing the discharge port. Using a film forming apparatus , the film forming material is discharged from the discharge port in a state where the film forming mask is brought into close contact with the surface of the substrate while flowing a heat transfer medium inside the flow path member. The first film-forming region that has been in close contact with the passage part before moving, after forming a thin film in one film-forming region that faces the passage part on the substrate surface so they are facing the shielding portion adjacent to the passage section, is the distance relative movement width parallel with said passage section of said deposition mask and the substrate in the direction of movement of the one, the said deposition mask the surface of the substrate is brought into close contact with face, to release the film forming material from the outlet Wherein a method for forming a thin film for forming a thin film on another film formation region facing said passing portion of the substrate surface.
The present invention is a method for forming a thin film, wherein a film forming material is discharged from a discharge port into a vacuum evacuated vacuum chamber, and a thin film is formed on a surface of a substrate disposed at a position facing the discharge port. Using a film forming apparatus , the film forming material is discharged from the discharge port in a state where the film forming mask is brought into close contact with the surface of the substrate while flowing a heat transfer medium inside the flow path member. After the thin film is formed in one film formation region facing the passage part of the substrate surface, the adhesion is released, and the one film formation region which is in contact with the passage part before moving is the in close contact with facing the unit shielding portion adjacent to the passage section, is the distance relative movement width parallel with said passing portion and the substrate and the deposition mask in the moving direction of the one, the deposition mask was close contact faces and the surface of the substrate, a film forming material from the outlet A method of forming a thin film, in which the step of forming a thin film in another film formation region facing the passing portion of the substrate surface is repeated the same number of times as the number of the unit shielding portions of the one shielding portion. .

大型の成膜マスクに対して熱による変形を抑制できるので、大型の基板上に所定のパターン形状の薄膜を形成することが可能となり、表示装置の大面積化が可能となる。   Since deformation due to heat can be suppressed with respect to a large film formation mask, a thin film having a predetermined pattern shape can be formed on a large substrate, and the display device can have a large area.

本発明の第一例の成膜マスクの平面図The top view of the film-forming mask of the first example of the present invention 本発明の第一例の成膜マスクのＡ−Ａ線切断断面図Sectional view taken along line AA of the film formation mask of the first example of the present invention 本発明の成膜装置の内部構成図Internal configuration diagram of film forming apparatus of the present invention 成膜マスク上に基板を配置した状態を説明するための図The figure for demonstrating the state which has arrange | positioned the board | substrate on the film-forming mask 成膜前の基板の平面図Plan view of substrate before film formation 第一の位置合わせ工程を説明するための図The figure for explaining the first alignment process 第一の成膜工程を説明するための図Diagram for explaining the first film formation process 第二の位置合わせ工程を説明するための図The figure for demonstrating a 2nd alignment process 第二の成膜工程を説明するための図The figure for demonstrating the 2nd film-forming process 赤色、緑色、青色発光層の薄膜が形成された基板を説明するための図The figure for demonstrating the board | substrate with which the thin film of red, green, and blue light emitting layer was formed 本発明の第二例の成膜マスクの平面図The top view of the film-forming mask of the second example of the present invention 本発明の第二例の成膜マスクのＢ−Ｂ線切断断面図Sectional view taken along line B-B of the film formation mask of the second example of the present invention. 第二例の成膜マスクを用いた薄膜形成方法を説明するための図The figure for demonstrating the thin film formation method using the film-forming mask of a 2nd example 本発明の第三例の成膜マスクの平面図The top view of the film-forming mask of the 3rd example of the present invention 本発明の第三例の成膜マスクのＣ−Ｃ線切断断面図Sectional view taken along line CC of the film formation mask of the third example of the present invention 本発明の第四例の成膜マスクの平面図The top view of the film-forming mask of the 4th example of the present invention 本発明の第四例の成膜マスクのＤ−Ｄ線切断断面図Sectional view taken along line D-D of the film formation mask of the fourth example of the present invention 従来の成膜装置の内部構成図Internal configuration diagram of conventional film deposition system

＜第一例の成膜マスクの構造＞
本発明の第一例の成膜マスクの構造を説明する。
図１は第一例の成膜マスク２０ａの平面図、図２は同Ａ−Ａ線切断断面図である。 <Structure of film forming mask of first example>
The structure of the film formation mask of the first example of the present invention will be described.
FIG. 1 is a plan view of a film forming mask 20a of the first example, and FIG. 2 is a cross-sectional view taken along the line AA.

第一例の成膜マスク２０ａは、複数の開口２３が形成され、成膜物質が開口２３を通過する通過部２１と、成膜物質を遮蔽する遮蔽部２２とを有している。
通過部２１の材質はここでは軟磁性金属である。 The film formation mask 20a of the first example has a plurality of openings 23, and has a passage portion 21 through which the film formation material passes through the opening 23 and a shielding portion 22 that shields the film formation material.
Here, the material of the passage portion 21 is a soft magnetic metal.

通過部２１と遮蔽部２２とは、長手方向を有し、遮蔽部２２の長手方向の長さは、通過部２１の長手方向の長さ以上にされている。また、通過部２１の幅の長さは、遮蔽部２２の幅の長さと同じに形成されている。   The passage portion 21 and the shielding portion 22 have a longitudinal direction, and the length of the shielding portion 22 in the longitudinal direction is greater than or equal to the length of the passage portion 21 in the longitudinal direction. Further, the width of the passage portion 21 is formed to be the same as the width of the shielding portion 22.

通過部２１と遮蔽部２２とは、成膜マスク２０ａ表面と平行な一の移動方向５に沿って長手方向を密着して並んで配置されている。
成膜マスク２０ａが一の移動方向５の通過部２１側に通過部２１の幅の距離移動すると、開口２３が位置していた場所が、遮蔽部２２によって塞がれるようになっている。 The passage part 21 and the shielding part 22 are arranged side by side in close contact with the longitudinal direction along one movement direction 5 parallel to the surface of the film formation mask 20a.
When the film formation mask 20a is moved a distance of the width of the passage part 21 toward the passage part 21 in the one movement direction 5, the place where the opening 23 is located is blocked by the shielding part 22.

遮蔽部２２には、内部に液体状の伝熱媒体が流れる流路部材２５が密着して設けられている。流路部材２５の材質は熱伝導率の高い金属が好ましく、本実施例ではアルミと銅のいずれか一方の金属が用いられる。遮蔽部２２と流路部材２５との接触面積は広い方がより高い熱伝導性を得られるため好ましい。   A flow path member 25 through which a liquid heat transfer medium flows is provided in close contact with the shielding portion 22. The material of the flow path member 25 is preferably a metal having high thermal conductivity, and in this embodiment, one of aluminum and copper is used. A wider contact area between the shield 22 and the flow path member 25 is preferable because higher thermal conductivity can be obtained.

流路部材２５の内部には流路が設けられており、流路部材２５に恒温装置２９を接続して内部に所定の温度に管理された伝熱媒体を流すと、熱伝導により遮蔽部２２が伝熱媒体と同じ温度に冷却又は加熱され、遮蔽部２２からの熱伝導により通過部２１が伝熱媒体と同じ温度に冷却又は加熱される。成膜マスク２０ａは、伝熱媒体と同じ所定の温度に維持されることで、設計値と同じ形状を維持できる。   A flow path is provided inside the flow path member 25, and when a thermostatic device 29 is connected to the flow path member 25 and a heat transfer medium controlled at a predetermined temperature flows through the flow path member 25, the shielding portion 22 is caused by heat conduction. Is cooled or heated to the same temperature as the heat transfer medium, and the passage part 21 is cooled or heated to the same temperature as the heat transfer medium by heat conduction from the shielding part 22. The film formation mask 20a can maintain the same shape as the design value by being maintained at the same predetermined temperature as the heat transfer medium.

通過部２１と遮蔽部２２は長手方向を密着されており、遮蔽部２２からの熱伝導により通過部２１が冷却又は加熱されると、通過部２１の長手方向の端部と中央部との間では温度差は生じず、通過部２１全体で熱による変形が抑制されるようになっている。   The passage portion 21 and the shielding portion 22 are in close contact with each other in the longitudinal direction, and when the passage portion 21 is cooled or heated by heat conduction from the shielding portion 22, it is between the end portion and the central portion in the longitudinal direction of the passage portion 21. Then, a temperature difference does not arise and the deformation | transformation by a heat | fever is suppressed by the passage part 21 whole.

成膜マスク２０ａのうち流路部材２５が密着して設けられた側とは逆側の一面では、通過部２１の表面と遮蔽部２２の表面とが同一の平面上に位置して、平坦になっている。
成膜マスク２０ａのうち通過部２１と遮蔽部２２が配置された領域より外側の外周部には、内部に伝熱媒体が流れる補助流路部材２６が密着して設けられている。補助流路部材２６は成膜マスク２０ａの表側と裏側のうち流路部材２５が設けられた側と同じ側に配置され、補助流路部材２６の内部の流路は流路部材２５の内部の流路に接続されている。 On one surface of the film formation mask 20a opposite to the side where the flow path member 25 is closely attached, the surface of the passage portion 21 and the surface of the shielding portion 22 are located on the same plane and are flat. It has become.
An auxiliary flow path member 26 through which a heat transfer medium flows is provided in close contact with the outer peripheral portion outside the region where the passage portion 21 and the shielding portion 22 are disposed in the film forming mask 20a. The auxiliary flow path member 26 is disposed on the same side as the side on which the flow path member 25 is provided, on the front side and the back side of the film formation mask 20 a, and the flow path inside the auxiliary flow path member 26 is inside the flow path member 25. It is connected to the flow path.

また、成膜マスク２０ａには後述する撮像装置４４で撮像可能な形状のマスク位置合わせマーク２８が設けられている。
本実施例では、成膜マスク２０ａの通過部２１と遮蔽部２２は一の板状部材（箔状部材）から一体成形されているが、成膜マスク２０ａの通過部２１と遮蔽部２２が複数の板状部材（箔状部材）から形成された構造も本発明に含まれる。成膜マスク２０ａの通過部２１と遮蔽部２２が複数の板状部材（箔状部材）から形成されている場合には、隣り合う板状部材（箔状部材）の境界では伝熱効率が低下するため、隣り合う板状部材（箔状部材）の境界は遮蔽部２２の内側を通るように構成するのが好ましい。 The film formation mask 20 a is provided with a mask alignment mark 28 having a shape that can be imaged by an imaging device 44 described later.
In this embodiment, the passage part 21 and the shielding part 22 of the film formation mask 20a are integrally formed from one plate-like member (foil-like member), but there are a plurality of passage parts 21 and shielding parts 22 of the film formation mask 20a. The structure formed from the plate-shaped member (foil-shaped member) is also included in the present invention. When the passage part 21 and the shielding part 22 of the film formation mask 20a are formed from a plurality of plate-like members (foil-like members), the heat transfer efficiency is reduced at the boundary between adjacent plate-like members (foil-like members). For this reason, it is preferable that the border between adjacent plate-like members (foil-like members) pass through the inside of the shielding portion 22.

＜成膜装置の構造＞
第一例の成膜マスク２０ａを有する成膜装置１０の構造を説明する。
図３は成膜装置１０の内部構成図である。
成膜装置１０は、真空槽１１と、真空槽１１内を真空排気する真空排気装置１２と、真空槽１１内に露出する放出口１６1、１６2から成膜物質を放出する放出装置１５1、１５2とを有している。 <Structure of deposition system>
The structure of the film forming apparatus 10 having the film forming mask 20a of the first example will be described.
FIG. 3 is an internal configuration diagram of the film forming apparatus 10.
The film forming apparatus 10 includes a vacuum chamber 11, a vacuum exhaust device 12 that evacuates the inside of the vacuum chamber 11, and a discharge device 15 1 that discharges a film forming substance from the discharge ports 16 1 and 16 2 exposed in the vacuum chamber 11. , 15 2 .

本実施例では、成膜装置１０は二個の放出装置１５1、１５2を有しているが、放出装置１５1、１５2の数は二個に限定されず、一個又は三個以上の場合も本発明に含まれる。
本実施例では、放出装置１５1、１５2は、内部に固体、気体又は液体の薄膜材料を収容する材料容器１５ａ1、１５ａ2と、材料容器１５ａ1、１５ａ2内の薄膜材料を加熱する加熱装置１５ｂ1、１５ｂ2とを有している。 In the present embodiment, the film forming apparatus 10 includes two discharge devices 15 1 and 15 2 , but the number of the discharge devices 15 1 and 15 2 is not limited to two, but one or three or more. Cases are also included in the present invention.
In this embodiment, the release device 15 1, 15 2 is heated inside the solid, and the material container 15a 1, 15a 2 for accommodating a thin film material of a gas or liquid, the thin film material of the material container 15a 1, 15a in the 2 It has heating devices 15b 1 and 15b 2 .

放出口１６1、１６2は材料容器１５ａ1、１５ａ2の一面に設けられている。本実施例では、材料容器１５ａ1、１５ａ2は、放出口１６1、１６2が設けられた面が上方に向けられた状態で、真空槽１１内に配置されている。 The discharge ports 16 1 and 16 2 are provided on one surface of the material containers 15a 1 and 15a 2 . In the present embodiment, the material containers 15a 1 and 15a 2 are disposed in the vacuum chamber 11 with the surfaces provided with the discharge ports 16 1 and 16 2 facing upward.

加熱装置１５ｂ1、１５ｂ2はここでは線状の抵抗加熱ヒーターであり、材料容器１５ａ1、１５ａ2の外周側面に巻き回されて取り付けられている。加熱装置１５ｂ1、１５ｂ2により材料容器１５ａ1、１５ａ2内の薄膜材料を加熱すると、薄膜材料から蒸気が発生し、薄膜材料の蒸気である成膜物質は放出口１６1、１６2から真空槽１１内に放出されるようになっている。 Here, the heating devices 15b 1 and 15b 2 are linear resistance heaters, and are wound around and attached to the outer peripheral side surfaces of the material containers 15a 1 and 15a 2 . When the thin film material in the material containers 15a 1 and 15a 2 is heated by the heating devices 15b 1 and 15b 2 , vapor is generated from the thin film material, and the film forming substance which is the vapor of the thin film material is vacuumed from the discharge ports 16 1 and 16 2. It is discharged into the tank 11.

放出口１６1、１６2には、開閉可能なシャッター１７1、１７2が設けられている。シャッター１７1、１７2が開状態のときには、成膜物質は放出口１６1、１６2から真空槽１１内に放出される。一方、シャッター１７1、１７2が閉状態のときには、成膜物質は遮蔽されて真空槽１１内に放出されないようになっている。
第一例の成膜マスク２０ａは、放出口１６1、１６2と対面する位置に、流路部材２５が設けられた側の一面を放出口１６1、１６2と対面させて水平に配置されている。 The outlet 16 1, 16 2, openable shutter 17 1, 17 2 are provided. When the shutters 17 1 and 17 2 are in the open state, the film-forming substance is discharged into the vacuum chamber 11 from the discharge ports 16 1 and 16 2 . On the other hand, when the shutters 17 1 and 17 2 are in the closed state, the film-forming substance is shielded and is not released into the vacuum chamber 11.
Deposition mask 20a in the first example, a position facing the outlet 16 1, 16 2, are arranged horizontally so as to face the discharge port 16 1, 16 2 one side of the channel member 25 is provided side ing.

成膜マスク２０ａから見て放出口１６1、１６2とは逆側には、成膜マスク２０ａの一面と対面して基板５０を配置できるようになっている。成膜マスク２０ａの一面と対面して基板５０を配置できるならば、基板５０を成膜マスク２０ａに接触して配置できるように構成してもよいし、成膜マスク２０ａの一面と所定距離離間して平行に配置できるように構成してもよい。後者の場合には、後述する成膜マスク２０ａと基板５０との相対移動が容易になるという利点がある。 On the side opposite to the discharge ports 16 1 and 16 2 when viewed from the film formation mask 20a, the substrate 50 can be arranged to face one surface of the film formation mask 20a. If the substrate 50 can be disposed facing one surface of the film formation mask 20a, the substrate 50 may be configured to be disposed in contact with the film formation mask 20a, or separated from the one surface of the film formation mask 20a by a predetermined distance. And may be configured to be arranged in parallel. In the latter case, there is an advantage that relative movement between a film formation mask 20a (described later) and the substrate 50 becomes easy.

図４は成膜マスク２０ａ上に接触して基板５０を配置した状態の成膜装置１０を示している。
成膜マスク２０ａのうち流路部材２５が設けられた側とは逆側の一面では、通過部２１の表面と遮蔽部２２の表面とが同一の平面上に位置して平坦になっており、基板５０表面が平坦な場合には、通過部２１の表面と遮蔽部２２の表面は基板５０表面から同じ高さで平行に配置される。 FIG. 4 shows the film forming apparatus 10 in a state where the substrate 50 is placed in contact with the film forming mask 20a.
On one surface of the film forming mask 20a opposite to the side where the flow path member 25 is provided, the surface of the passage portion 21 and the surface of the shielding portion 22 are located on the same plane and are flat. When the surface of the substrate 50 is flat, the surface of the passage portion 21 and the surface of the shielding portion 22 are arranged in parallel at the same height from the surface of the substrate 50.

成膜装置１０は、成膜マスク２０ａと基板５０とを一の移動方向５に平行に相対移動させる移動装置４１を有している。
本実施例では、移動装置４１は、基板５０を保持可能な腕部４１ｂと、腕部４１ｂを移動させる腕部移動装置４１ａとを有している。 The film forming apparatus 10 includes a moving device 41 that relatively moves the film forming mask 20 a and the substrate 50 in parallel with one moving direction 5.
In the present embodiment, the moving device 41 has an arm portion 41b that can hold the substrate 50 and an arm portion moving device 41a that moves the arm portion 41b.

腕部４１ｂは棒形状であり、鉛直方向と平行に向けられた状態で、成膜マスク２０ａの上方に配置されている。腕部４１ｂの下端には水平方向に突出された凸部４１ｃが設けられている。腕部４１ｂの上端は真空槽１１の壁面を気密に貫通して、真空槽１１の外側に延ばされている。   The arm portion 41b has a rod shape and is disposed above the film formation mask 20a in a state of being directed parallel to the vertical direction. At the lower end of the arm portion 41b, a convex portion 41c protruding in the horizontal direction is provided. The upper end of the arm portion 41 b penetrates the wall surface of the vacuum chamber 11 in an airtight manner and extends to the outside of the vacuum chamber 11.

腕部移動装置４１ａはモーターであり、真空槽１１の外側に配置され、腕部４１ｂの上端に接続されている。腕部移動装置４１ａは、動力を腕部４１ｂに伝達して、腕部４１ｂを鉛直方向と水平方向にそれぞれ移動させ、かつ腕部４１ｂを鉛直方向と平行な中心軸線を中心に回転させるように構成されている。   The arm part moving device 41a is a motor, is disposed outside the vacuum chamber 11, and is connected to the upper end of the arm part 41b. The arm unit moving device 41a transmits power to the arm unit 41b, moves the arm unit 41b in the vertical direction and the horizontal direction, and rotates the arm unit 41b around a central axis parallel to the vertical direction. It is configured.

腕部移動装置４１ａにより腕部４１ｂの下端の凸部４１ｃを基板５０よりも低い位置に移動させた後、腕部４１ｂを中心軸線を中心に回転させると、凸部４１ｃの上方を向いた面は基板５０の表面の外周部分と対面するようになっている。その状態で腕部４１ｂを上方に移動させると、凸部４１ｃの上方を向いた面は基板５０の表面の外周部分と接触して、基板５０は腕部４１ｂに保持される。   After the convex portion 41c at the lower end of the arm portion 41b is moved to a position lower than the substrate 50 by the arm portion moving device 41a, when the arm portion 41b is rotated around the central axis, the surface facing upward of the convex portion 41c Is configured to face the outer peripheral portion of the surface of the substrate 50. When the arm portion 41b is moved upward in this state, the surface facing upward of the convex portion 41c comes into contact with the outer peripheral portion of the surface of the substrate 50, and the substrate 50 is held by the arm portion 41b.

さらに腕部移動装置４１ａにより腕部４１ｂを上方に移動させると、基板５０は腕部４１ｂに保持された状態で、成膜マスク２０ａから離間する。
次いで腕部移動装置４１ａにより腕部４１ｂを一の移動方向５に平行に移動させると、基板５０は腕部４１ｂに保持された状態で、成膜マスク２０ａに対して一の移動方向５に平行に相対移動する。基板５０が腕部４１ｂに保持された状態で、腕部４１ｂを下方に移動させると、基板５０は成膜マスク２０ａ上に接触して配置される。 Further, when the arm portion 41b is moved upward by the arm portion moving device 41a, the substrate 50 is separated from the film forming mask 20a while being held by the arm portion 41b.
Next, when the arm part 41b is moved in parallel with one movement direction 5 by the arm part moving device 41a, the substrate 50 is held in the arm part 41b and parallel to the one movement direction 5 with respect to the film formation mask 20a. Move relative to. When the arm portion 41b is moved downward with the substrate 50 held by the arm portion 41b, the substrate 50 is placed in contact with the film formation mask 20a.

成膜装置１０は、基板５０と成膜マスク２０ａとを相対的に位置合わせする位置合わせ装置を有している。
位置合わせ装置は、撮像装置４４と制御装置４３と補助移動装置４５とを有している。 The film forming apparatus 10 includes an alignment apparatus that relatively aligns the substrate 50 and the film formation mask 20a.
The alignment device includes an imaging device 44, a control device 43, and an auxiliary movement device 45.

撮像装置４４はここではＣＣＤカメラであり、成膜マスク２０ａの上方に配置され、基板５０に設けられた基板位置合わせマークと成膜マスク２０ａに設けられたマスク位置合わせマークとをそれぞれ撮像できるように構成されている。   Here, the imaging device 44 is a CCD camera, and is arranged above the film formation mask 20a so that the substrate alignment mark provided on the substrate 50 and the mask alignment mark provided on the film formation mask 20a can be respectively imaged. It is configured.

補助移動装置４５は基板５０と成膜マスク２０ａとを成膜マスク２０ａの表面と平行な平面内で相対移動できるように構成されている。
制御装置４３は、撮像装置４４に接続され、撮像装置４４の撮像結果から、基板位置合わせマークとマスク位置合わせマークとの相対位置の誤差量を求め、補助移動装置４５に制御信号を送って、基板位置合わせマークとマスク位置合わせマークとの相対位置の誤差量を減少させる方向に基板５０と成膜マスク２０ａとを相対移動させるように構成されている。 The auxiliary moving device 45 is configured to relatively move the substrate 50 and the film forming mask 20a in a plane parallel to the surface of the film forming mask 20a.
The control device 43 is connected to the imaging device 44, obtains an error amount of the relative position between the substrate alignment mark and the mask alignment mark from the imaging result of the imaging device 44, and sends a control signal to the auxiliary movement device 45, The substrate 50 and the film formation mask 20a are relatively moved in a direction to reduce the amount of error in the relative position between the substrate alignment mark and the mask alignment mark.

成膜装置１０は、通過部２１の表面を基板５０の表面と密着させる密着装置を有している。
本実施例では、密着装置は、平板形状の磁石４６ａと、磁石４６ａを鉛直方向に移動させる磁石移動装置４６ｂとを有している。 The film forming apparatus 10 includes an adhesion device that brings the surface of the passage portion 21 into close contact with the surface of the substrate 50.
In the present embodiment, the contact device includes a flat plate-shaped magnet 46a and a magnet moving device 46b that moves the magnet 46a in the vertical direction.

磁石４６ａは成膜マスク２０ａの上方に、成膜マスク２０ａの表面と平行に配置されている。磁石４６ａのうち撮像装置４４と対面する部分には切り欠きが形成され、撮像装置４４の視野が遮蔽されないようになっている。
磁石移動装置４６ｂはモーターであり、動力を磁石４６ａに伝達して、磁石４６ａを鉛直方向に往復移動できるように構成されている。 The magnet 46a is disposed above the film formation mask 20a and in parallel with the surface of the film formation mask 20a. A portion of the magnet 46a that faces the imaging device 44 is notched so that the field of view of the imaging device 44 is not shielded.
The magnet moving device 46b is a motor, and is configured to transmit power to the magnet 46a so that the magnet 46a can reciprocate in the vertical direction.

成膜マスク２０ａ上に基板５０を配置した状態で、磁石４６ａを下方に移動させて基板５０の裏面と接触する位置で静止させると、通過部２１は磁石４６ａからの磁力に引かれて基板５０の表面に密着するようになっている。   If the magnet 46a is moved downward in a state where the substrate 50 is disposed on the film formation mask 20a and stopped at a position in contact with the back surface of the substrate 50, the passage portion 21 is attracted by the magnetic force from the magnet 46a and the substrate 50 is moved. It comes in close contact with the surface.

上記実施例の成膜装置１０では、放出装置１５1、１５2は放出口１６1、１６2を上方に向けた状態で真空槽１１内に配置され、成膜マスク２０ａは放出口１６1、１６2の上方に水平に配置されていたが、成膜マスク２０ａの流路部材２５側の一面と放出口１６1、１６2とが対面されていれば本発明は上記配置に限定されず、放出装置１５1、１５2は放出口１６1、１６2を下方に向けた状態で真空槽１１内に配置され、成膜マスク２０ａは放出口１６1、１６2の下方に水平に配置されていてもよいし、放出装置１５1、１５2は放出口１６1、１６2を一の水平方向に向けた状態で真空槽１１内に配置され、成膜マスク２０ａは放出口１６1、１６2から見て前記一の水平方向に鉛直に立てられた状態で配置されていてもよい。 In the film forming apparatus 10 of the above embodiment, the discharge devices 15 1 and 15 2 are arranged in the vacuum chamber 11 with the discharge ports 16 1 and 16 2 facing upward, and the film formation mask 20a is formed in the discharge ports 16 1 and 16 2 . 16 were arranged horizontally in two upper, but the present invention if one side and the discharge port 16 1 of the flow path member 25 side of the deposition masks 20a, 16 2 and is long as to face is not limited to the above arrangement, The discharge devices 15 1 and 15 2 are disposed in the vacuum chamber 11 with the discharge ports 16 1 and 16 2 facing downward, and the film formation mask 20a is horizontally disposed below the discharge ports 16 1 and 16 2. Alternatively, the discharge devices 15 1 and 15 2 are disposed in the vacuum chamber 11 with the discharge ports 16 1 and 16 2 oriented in one horizontal direction, and the film formation mask 20a is disposed in the discharge ports 16 1 and 16 2. It may be arranged in a state where it stands vertically in the one horizontal direction as viewed from the side.

＜薄膜の形成方法＞
第一例の成膜マスク２０ａを用いた薄膜の形成方法をカラー表示装置の赤色、緑色、青色発光層の成膜工程を一例に説明する。 <Method for forming thin film>
A method of forming a thin film using the film formation mask 20a of the first example will be described by taking a film formation process of red, green, and blue light emitting layers of a color display device as an example.

（準備工程）
図５は成膜前の基板５０の平面図を示している。本実施例では、予め表面にホール注入層とホール輸送層が順に積層された基板５０を用いる。
基板５０の表面に、通過部２１と同形状の第一の成膜領域５１と第二の成膜領域５２を予め定めておく。第一の成膜領域５１と第二の成膜領域５２は、基板５０の表面と平行な一の直線に沿って長手方向を密着して並んで配置する。
第一、第二の成膜領域５１、５２内には赤色、緑色、青色発光層の画素領域がそれぞれ含まれている。 (Preparation process)
FIG. 5 shows a plan view of the substrate 50 before film formation. In this embodiment, a substrate 50 in which a hole injection layer and a hole transport layer are sequentially laminated on the surface in advance is used.
A first film formation region 51 and a second film formation region 52 having the same shape as that of the passage portion 21 are previously determined on the surface of the substrate 50. The first film formation region 51 and the second film formation region 52 are arranged side by side in close contact with each other along a straight line parallel to the surface of the substrate 50.
The first and second film formation regions 51 and 52 include pixel regions of red, green, and blue light emitting layers, respectively.

また、基板５０のうち、第一の成膜領域５１の赤色、緑色、青色発光層の画素領域を通過部２１の開口２３と対面させたときに、マスク位置合わせマーク２８と対面する位置には第一の赤色、緑色、青色基板位置合わせマークをそれぞれ設け、第二の成膜領域５２の赤色、緑色、青色発光層の画素領域を通過部２１の開口２３と対面させたときに、マスク位置合わせマーク２８と対面する位置には第二の赤色、緑色、青色基板位置合わせマークを設けておく。符号５８1、５８2は第一、第二の赤色基板位置合わせマーク５８1、５８2を示している。 Further, in the substrate 50, when the pixel regions of the red, green, and blue light emitting layers of the first film formation region 51 are opposed to the opening 23 of the passage portion 21, the position that faces the mask alignment mark 28 is not present. When the first red, green, and blue substrate alignment marks are provided, and the pixel regions of the red, green, and blue light emitting layers in the second film formation region 52 are made to face the opening 23 of the passage portion 21, the mask position A second red, green, and blue substrate alignment mark is provided at a position facing the alignment mark 28. Reference numerals 58 1 and 58 2 indicate first and second red substrate alignment marks 58 1 and 58 2 .

本実施例では、図３を参照し、一方の材料容器１５ａ1内に赤色発光層のホストの有機材料を収容し、他方の材料容器１５ａ2内に赤色発光層のドーパントの有機材料を収容しておく。また、真空槽１１内には符号１５1、１５2の放出装置の他に、符号１５1、１５2の放出装置と同じ構造の４個の放出装置（不図示）が配置されており、当該４個の放出装置の材料容器内に緑色発光層のホストとドーパントの有機材料と、青色発光層のホストとドーパントの有機材料をそれぞれ収容しておく。 In this embodiment, with reference to FIG. 3, to accommodate the organic material of the host of the red emission layer on one of the material container 15a 1, containing an organic material of the dopant of the red light-emitting layer to the other material container 15a within 2 Keep it. Further, the vacuum chamber 11 in addition to the discharge device code 15 1, 15 2, four emission device having the same structure as the discharge device code 15 1, 15 2 (not shown) are is located, the In the material containers of the four emission devices, the green light emitting layer host and the dopant organic material, and the blue light emitting layer host and the dopant organic material are accommodated, respectively.

真空排気装置１２により真空槽１１内を真空排気し、真空雰囲気を形成する。以後、真空排気を継続して真空槽１１内の真空雰囲気を維持する。
補助流路部材２６を介して流路部材２５に恒温装置２９を接続して、所定の温度に温度管理された伝熱媒体を流し、成膜マスク２０ａを伝熱媒体と同じ温度に冷却又は加熱する。以後、伝熱媒体の循環を継続して、成膜マスク２０ａを所定の温度に維持する。 The inside of the vacuum chamber 11 is evacuated by the evacuation apparatus 12 to form a vacuum atmosphere. Thereafter, evacuation is continued and the vacuum atmosphere in the vacuum chamber 11 is maintained.
A thermostatic device 29 is connected to the flow path member 25 via the auxiliary flow path member 26, and a heat transfer medium whose temperature is controlled to a predetermined temperature is flowed to cool or heat the film formation mask 20a to the same temperature as the heat transfer medium. To do. Thereafter, the circulation of the heat transfer medium is continued to maintain the film formation mask 20a at a predetermined temperature.

図４を参照し、真空槽１１内の真空雰囲気を維持しながら真空槽１１内に基板５０を搬入し、成膜マスク２０ａを基板５０のホール輸送層の表面と対面させた状態で、ここでは成膜マスク２０ａ上に接触して配置する。   With reference to FIG. 4, the substrate 50 is carried into the vacuum chamber 11 while maintaining the vacuum atmosphere in the vacuum chamber 11, and the film formation mask 20 a faces the surface of the hole transport layer of the substrate 50. It arrange | positions and contacts on the film-forming mask 20a.

全てのシャッターを閉状態にしておく。全ての放出装置の加熱装置により材料容器内の有機材料をそれぞれ加熱し、材料容器内で赤色、緑色、青色のホストとドーパントの有機材料の蒸気をそれぞれ発生させる。   Keep all shutters closed. The organic material in the material container is heated by the heating devices of all the discharge devices, and vapors of red, green, and blue host and dopant organic materials are generated in the material container, respectively.

成膜マスク２０ａは伝熱媒体と同じ所定の温度に冷却されており、加熱装置からの熱輻射を受けても成膜マスク２０ａの温度上昇が抑えられる。従って、加熱装置による薄膜材料の加熱温度を従来より高く設定でき、薄膜材料の蒸発速度を大きくして、後述する成膜工程に要する時間を短縮することができる。   The film formation mask 20a is cooled to the same predetermined temperature as that of the heat transfer medium, and the temperature rise of the film formation mask 20a can be suppressed even when receiving heat radiation from the heating device. Therefore, the heating temperature of the thin film material by the heating device can be set higher than before, the evaporation speed of the thin film material can be increased, and the time required for the film forming process described later can be shortened.

（第一の位置合わせ工程）
撮像装置４４により、基板５０の第一の赤色基板位置合わせマーク５８1と、成膜マスク２０ａのマスク位置合わせマーク２８をそれぞれ撮像する。 (First alignment process)
By the imaging device 44, a first red substrate alignment marks 58 1 of the substrate 50, for imaging the mask alignment marks 28 of the deposition mask 20a, respectively.

制御装置４３は、撮像装置４４の撮像結果から第一の赤色基板位置合わせマーク５８1とマスク位置合わせマーク２８の相対位置の誤差量を求め、補助移動装置４５に制御信号を送って、誤差量を減少させるように基板５０と成膜マスク２０ａとを相対移動させ、図６を参照し、第一の赤色基板位置合わせマーク５８1とマスク位置合わせマーク２８とを対面させる。このとき第一の成膜領域５１の赤色発光層の画素領域は通過部２１の開口２３と対面する。 Controller 43 obtains the error amount from the imaging result of the imaging device 44 relative positions of the first red substrate alignment marks 58 1 and the mask alignment mark 28, sends a control signal to the auxiliary movement device 45, the error amount by relatively moving the substrate 50 so as to reduce the deposition masks 20a and with reference to FIG. 6, to face the first red substrate alignment marks 58 1 and the mask alignment mark 28. At this time, the pixel region of the red light emitting layer in the first film formation region 51 faces the opening 23 of the passage portion 21.

成膜マスク２０ａは伝熱媒体と同じ所定の温度に冷却されており、マスク位置合わせマーク２８の周囲も伝熱媒体と同じ所定の温度に冷却され、隣り合う二つのマスク位置合わせマーク２８間の間隔の熱膨張が抑制される。従って、第一の赤色基板位置合わせマーク５８1とマスク位置合わせマーク２８とを正確に対面させることができ、従来の成膜装置１１０よりも成膜マスク２０ａと基板５０との位置合わせがしやすく、短い時間で位置合わせすることができる。 The film formation mask 20a is cooled to the same predetermined temperature as the heat transfer medium, and the periphery of the mask alignment mark 28 is also cooled to the same predetermined temperature as the heat transfer medium, so that the two mask alignment marks 28 are adjacent to each other. Spatial thermal expansion is suppressed. Accordingly, a first red substrate alignment marks 58 1 and the mask alignment mark 28 can be facing precisely, easy position Awasegashi the deposition mask 20a and the substrate 50 than the conventional film-forming apparatus 110 , Can be aligned in a short time.

本実施例では、第一の成膜領域５１を通過部２１と対面させると、第二の成膜領域５２の一部は成膜マスク２０ａの外周の外側に露出する。
成膜装置１０は成膜物質を遮蔽する補助遮蔽部材６０を有している。補助遮蔽部材６０を、第二の成膜領域５２の露出した部分と放出口１６1、１６2との間に配置して、第二の成膜領域５２の露出部分を遮蔽する。
図４を参照し、磁石移動装置４６ｂにより磁石４６ａを移動させて基板５０の裏面と接触する位置で静止させ、通過部２１の表面を基板５０の表面に密着させる。 In the present embodiment, when the first film formation region 51 is made to face the passage portion 21, a part of the second film formation region 52 is exposed outside the outer periphery of the film formation mask 20a.
The film forming apparatus 10 includes an auxiliary shielding member 60 that shields a film forming material. The auxiliary shielding member 60 is disposed between the exposed part of the second film forming region 52 and the discharge ports 16 1 and 16 2 to shield the exposed part of the second film forming region 52.
With reference to FIG. 4, the magnet 46 a is moved by the magnet moving device 46 b so as to be stationary at a position in contact with the back surface of the substrate 50, and the surface of the passage portion 21 is brought into close contact with the surface of the substrate 50.

（第一の成膜工程）
赤色発光層のホストとドーパントの有機材料が配置された放出装置１５1、１５2のシャッター１７1、１７2を開状態にして、赤色発光層のホストとドーパントの有機材料が配置された放出装置１５1、１５2の放出口１６1、１６2から赤色発光層のホストとドーパントの成膜物質をそれぞれ放出させる。 (First film formation process)
And a red light-emitting discharge device 15 first organic material of the host and the dopant is located in the layer, 15 second shutter 17 1, 17 2 in the open state, release device organic material of the host and the dopant of the red light emitting layer is disposed 15 1, 15 2 of the outlet 16 1, 16 2, respectively to release the film forming material of the host and a dopant of the red light-emitting layer from.

放出口１６1、１６2から放出された赤色発光層のホストとドーパントの有機成膜物質は通過部２１の開口２３を通過して、基板５０のホール輸送層の表面に共蒸着し、図７を参照し、基板５０のホール輸送層の表面のうち通過部２１の開口２３と対面する第一の成膜領域５１の赤色発光層の画素領域には、開口２３と同じパターン形状の赤色発光層の有機薄膜が形成される。符号５３Ｒは基板５０に形成された赤色発光層の薄膜を示している。 The organic film-forming material of the red light emitting layer and the dopant emitted from the emission ports 16 1 and 16 2 passes through the opening 23 of the passage portion 21, and is co-deposited on the surface of the hole transport layer of the substrate 50. The red light emitting layer having the same pattern shape as the opening 23 is formed in the pixel region of the red light emitting layer of the first film formation region 51 facing the opening 23 of the passage portion 21 in the surface of the hole transport layer of the substrate 50. An organic thin film is formed. Reference numeral 53R denotes a thin film of a red light emitting layer formed on the substrate 50.

第二の成膜領域５２は補助遮蔽部材６０で遮蔽されており、成膜物質は第二の成膜領域５２には到達しない。
成膜マスク２０ａの温度は伝熱媒体と同じ所定の温度に冷却されており、成膜物質が付着しても温度上昇が抑えられる。そのため、成膜マスク２０ａの熱膨張が抑制され、第一の成膜領域５１に形成される薄膜５３Ｒに位置ズレは生じない。 The second film formation region 52 is shielded by the auxiliary shielding member 60, and the film formation material does not reach the second film formation region 52.
The temperature of the film formation mask 20a is cooled to the same predetermined temperature as that of the heat transfer medium, and the temperature rise can be suppressed even if the film formation material adheres. Therefore, the thermal expansion of the film formation mask 20a is suppressed, and no positional deviation occurs in the thin film 53R formed in the first film formation region 51.

また通過部２１の表面は基板５０の表面に密着しており、通過部２１の開口２３を通過した成膜物質が通過部２１の表面と基板５０の表面との隙間で拡散して薄膜５３Ｒの輪郭に滲みが生じることはない。   The surface of the passage portion 21 is in close contact with the surface of the substrate 50, and the film-forming substance that has passed through the opening 23 of the passage portion 21 diffuses in the gap between the surface of the passage portion 21 and the surface of the substrate 50, thereby forming the thin film 53R. There is no bleeding in the contour.

第一の成膜領域５１の赤色発光層の画素領域に所定の厚みの赤色発光層の薄膜５３Ｒを形成した後、図４を参照し、シャッター１７1、１７2を閉状態にして、放出口１６1、１６2からの蒸気の放出を停止する。
磁石移動装置４６ｂにより磁石４６ａを基板５０の裏面から離間させ、通過部２１の表面と遮蔽部２２の表面の基板５０表面との密着を解除する。 After the red light emitting layer thin film 53R having a predetermined thickness is formed in the pixel region of the red light emitting layer of the first film formation region 51, the shutters 17 1 and 17 2 are closed with reference to FIG. The release of steam from 16 1 and 16 2 is stopped.
The magnet 46a is separated from the back surface of the substrate 50 by the magnet moving device 46b, and the adhesion between the surface of the passage portion 21 and the surface of the shielding portion 22 is released.

（第二の位置合わせ工程）
移動装置４１により、移動前に通過部２１と対面していた第一の成膜領域５１が通過部２１に隣接する遮蔽部２２と対面するように、成膜マスク２０ａと基板５０とを一の移動方向５に平行に通過部２１の幅の距離相対移動させる。
撮像装置４４により基板５０の第二の赤色基板位置合わせマーク５８2と成膜マスク２０ａのマスク位置合わせマーク２８をそれぞれ撮像する。 (Second alignment process)
With the moving device 41, the film forming mask 20 a and the substrate 50 are brought together so that the first film forming region 51 facing the passing part 21 before moving faces the shielding part 22 adjacent to the passing part 21. The distance relative to the width of the passage portion 21 is moved in parallel with the moving direction 5.
By the imaging device 44 for imaging the second red substrate alignment marks 58 2 and the mask alignment marks 28 of the deposition mask 20a of the substrate 50, respectively.

制御装置４３は、撮像装置４４の撮像結果から第二の赤色基板位置合わせマーク５８2とマスク位置合わせマーク２８との相対位置の誤差量を求め、補助移動装置４５に制御信号を送って、誤差量を減少させるように基板５０と成膜マスク２０ａを相対移動させ、図８を参照し、第二の赤色基板位置合わせマーク５８2をマスク位置合わせマーク２８と対面させる。このとき、基板５０のうち移動前に補助遮蔽部材６０と対面していた第二の成膜領域５２は通過部２１と対面し、移動前に通過部２１と対面していた第一の成膜領域５１は遮蔽部２２と対面して遮蔽される。
図４を参照し、磁石４６ａを移動させて基板５０の裏面と接触する位置で静止させ、通過部２１の表面を基板５０の表面に密着させる。 Controller 43 obtains the error of the relative position between the second red substrate alignment marks 58 2 and the mask alignment mark 28 from the imaging result of the imaging device 44, sends a control signal to the auxiliary movement device 45, an error by relatively moving the substrate 50 and the deposition masks 20a to reduce the amount, with reference to FIG. 8, to face the second red substrate alignment marks 58 2 mask alignment marks 28. At this time, the second film-forming region 52 that faces the auxiliary shielding member 60 before the movement of the substrate 50 faces the passage part 21, and the first film-formation that faces the passage part 21 before the movement. The region 51 is shielded by facing the shielding part 22.
Referring to FIG. 4, magnet 46 a is moved and stopped at a position where it comes into contact with the back surface of substrate 50, and the surface of passage portion 21 is brought into close contact with the surface of substrate 50.

（第二の成膜工程）
赤色発光層のホストとドーパントの有機材料が配置された放出装置１５1、１５2のシャッター１７1、１７2を開状態にして、赤色発光層のホストとドーパントの有機材料が配置された放出装置１５1、１５2の放出口１６1、１６2から赤色発光層のホストとドーパントの有機材料の蒸気を放出させる。 (Second film formation process)
And a red light-emitting discharge device 15 first organic material of the host and the dopant is located in the layer, 15 second shutter 17 1, 17 2 in the open state, release device organic material of the host and the dopant of the red light emitting layer is disposed 15 1, 15 2 of the outlet 16 1, 16 2 from the release of vapor of organic material of the host and the dopant of the red light-emitting layer.

放出口１６1、１６2から放出された赤色発光層のホストとドーパントの有機成膜物質は通過部２１の開口２３を通過して、基板５０のホール輸送層の表面に共蒸着し、図９を参照し、基板５０の表面のうち通過部２１の開口２３と対面する第二の成膜領域５２の赤色発光層の画素領域には、開口２３と同じパターン形状の赤色発光層の薄膜５３Ｒが形成される。 The organic film-forming material of the red light emitting layer and the dopant emitted from the emission ports 16 1 and 16 2 passes through the opening 23 of the passage portion 21, and is co-deposited on the surface of the hole transport layer of the substrate 50, as shown in FIG. In the pixel region of the red light emitting layer of the second film formation region 52 facing the opening 23 of the passage portion 21 on the surface of the substrate 50, the red light emitting layer thin film 53R having the same pattern shape as the opening 23 is formed. It is formed.

第一の成膜領域５１は遮蔽部２２で遮蔽されており、成膜物質は第一の成膜領域５１に到達しない。従って、第一の成膜領域５１にさらに薄膜５３Ｒが形成されることはない。
成膜マスク２０ａは伝熱媒体と同じ所定の温度に冷却されており、成膜物質が付着しても温度上昇が抑えられる。そのため、成膜マスク２０ａの熱膨張は抑制され、第二の成膜領域５２に形成される薄膜５３Ｒに位置ズレは生じない。 The first film formation region 51 is shielded by the shielding part 22, and the film formation material does not reach the first film formation region 51. Therefore, the thin film 53R is not further formed in the first film formation region 51.
The film formation mask 20a is cooled to the same predetermined temperature as the heat transfer medium, and the temperature rise can be suppressed even if the film formation material adheres. Therefore, the thermal expansion of the film formation mask 20a is suppressed, and no positional deviation occurs in the thin film 53R formed in the second film formation region 52.

また通過部２１の表面は基板５０の表面に密着しており、通過部２１の開口２３を通過した蒸気が通過部２１の表面と基板５０の表面との隙間で拡散して薄膜５３Ｒの輪郭に滲みが生じることない。   Further, the surface of the passage portion 21 is in close contact with the surface of the substrate 50, and the vapor that has passed through the opening 23 of the passage portion 21 diffuses in the gap between the surface of the passage portion 21 and the surface of the substrate 50 to form the outline of the thin film 53R. No bleeding occurs.

第二の成膜領域５２の赤色発光層の画素領域に所定の厚みの赤色発光層の薄膜５３Ｒを形成した後、図４を参照し、シャッター１７1、１７2を閉状態にして、放出口１６1、１６2からの蒸気の放出を停止する。
磁石移動装置４６ｂにより磁石４６ａを基板５０の裏面から離間させ、基板５０の表面と通過部２１の表面との密着を解除する。 After the red light emitting layer thin film 53R having a predetermined thickness is formed in the pixel region of the red light emitting layer in the second film formation region 52, referring to FIG. 4, the shutters 17 1 and 17 2 are closed, and the discharge port The release of steam from 16 1 and 16 2 is stopped.
The magnet 46a is separated from the back surface of the substrate 50 by the magnet moving device 46b, and the adhesion between the surface of the substrate 50 and the surface of the passage portion 21 is released.

（緑色発光層成膜工程）
上述の第一の位置合わせ工程と同様にして位置あわせを行って、第一の成膜領域５１の緑色発光層の画素領域を通過部２１の開口２３と対面させた後、第一の成膜工程と同様にして、緑色発光層のホストとドーパントの有機材料が配置された放出装置から成膜物質をそれぞれ放出させ、第一の成膜領域５１の緑色発光層の画素領域に所定の厚みの緑色発光層の薄膜を形成する。次いで、第二の位置合わせ工程と同様にして位置あわせを行って、第二の成膜領域５２の緑色発光層の画素領域を通過部２１の開口２３と対面させた後、第二の成膜工程と同様にして、緑色発光層のホストとドーパントの有機材料が配置された放出装置から成膜物質をそれぞれ放出させ、第二の成膜領域５２の緑色発光層の画素領域に所定の厚みの緑色発光層の薄膜を形成する。 (Green light emitting layer deposition process)
Alignment is performed in the same manner as in the first alignment step described above so that the pixel region of the green light emitting layer in the first film formation region 51 faces the opening 23 of the passage portion 21, and then the first film formation is performed. In the same manner as in the process, each of the film-forming substances is released from the emission device in which the organic material of the green light-emitting layer and the organic material of the dopant are arranged, and a predetermined thickness is formed in the pixel region of the green light-emitting layer in the first film formation region 51. A thin film of a green light emitting layer is formed. Next, alignment is performed in the same manner as in the second alignment step so that the pixel region of the green light emitting layer in the second film formation region 52 faces the opening 23 of the passage portion 21, and then the second film formation is performed. In the same manner as in the process, each of the film-forming substances is released from the emission device in which the host of the green light-emitting layer and the organic material of the dopant are arranged, and the pixel region of the green light-emitting layer of the second film-forming region 52 has a predetermined thickness. A thin film of a green light emitting layer is formed.

（青色発光層成膜工程）
上述の第一の位置合わせ工程と同様にして位置あわせを行って、第一の成膜領域５１の青色発光層の画素領域を通過部２１の開口２３と対面させた後、第一の成膜工程と同様にして、青色発光層のホストとドーパントの有機材料が配置された放出装置から成膜物質をそれぞれ放出させ、第一の成膜領域５１の青色発光層の画素領域に所定の厚みの青色発光層の薄膜を形成する。次いで、第二の位置合わせ工程と同様にして位置あわせを行って、第二の成膜領域５２の青色発光層の画素領域を通過部２１の開口２３と対面させた後、第二の成膜工程と同様にして、青色発光層のホストとドーパントの有機材料が配置された放出装置から成膜物質をそれぞれ放出させ、第二の成膜領域５２の青色発光層の画素領域に所定の厚みの青色発光層の薄膜を形成する。 (Blue light emitting layer deposition process)
Alignment is performed in the same manner as in the first alignment step described above, and the pixel region of the blue light emitting layer of the first film formation region 51 is made to face the opening 23 of the passage portion 21, and then the first film formation is performed. In the same manner as in the process, each of the film-forming substances is released from the emission device in which the host of the blue light-emitting layer and the organic material of the dopant are arranged, and the pixel region of the blue light-emitting layer of the first film-forming region 51 has a predetermined thickness. A thin film of a blue light emitting layer is formed. Next, alignment is performed in the same manner as in the second alignment step so that the pixel region of the blue light emitting layer in the second film formation region 52 faces the opening 23 of the passage portion 21, and then the second film formation is performed. In the same manner as in the process, each of the film-forming substances is released from the emission device in which the host of the blue light-emitting layer and the organic material of the dopant are arranged, and the pixel region of the blue light-emitting layer of the second film-forming region 52 has a predetermined thickness. A thin film of a blue light emitting layer is formed.

（基板交換工程）
図１０を参照し、基板５０の第一、第二の成膜領域５１、５２の赤色、緑色、青色発光層の画素領域にそれぞれ赤色、緑色、青色発光層の薄膜５３Ｒ、５３Ｇ、５３Ｂを形成した後、真空槽１１内の真空雰囲気を維持しながら、成膜済みの基板５０を真空槽１１の外側に搬出する。 (Substrate replacement process)
Referring to FIG. 10, red, green, and blue light emitting layer thin films 53R, 53G, and 53B are formed in the red, green, and blue light emitting layer pixel regions of first and second film forming regions 51 and 52 of substrate 50, respectively. After that, the film-formed substrate 50 is carried out of the vacuum chamber 11 while maintaining the vacuum atmosphere in the vacuum chamber 11.

次いで、真空槽１１内の真空雰囲気を維持しながら、別の基板５０を真空槽１１内に搬入し、上述の各工程を順に行って、未成膜の基板５０に赤色、緑色、青色発光層の薄膜５３Ｒ、５３Ｇ、５３Ｂを形成する。
複数枚の基板５０に対して上述の各工程を繰り返し、複数枚の基板５０に赤色、緑色、青色発光層の薄膜５３Ｒ、５３Ｇ、５３Ｂを形成する。 Next, while maintaining the vacuum atmosphere in the vacuum chamber 11, another substrate 50 is carried into the vacuum chamber 11, and the above-described steps are performed in order, and the red, green, and blue light emitting layers are formed on the non-film-formed substrate 50. Thin films 53R, 53G, and 53B are formed.
The above-described steps are repeated for the plurality of substrates 50 to form red, green, and blue light emitting layer thin films 53R, 53G, and 53B on the plurality of substrates 50.

成膜マスク２０ａは伝熱媒体と同じ所定の温度に維持されており、複数枚の基板５０に対して成膜工程を繰り返しても成膜マスク２０ａの熱による変形は抑制され、各基板５０に形成される薄膜５３Ｒ、５３Ｇ、５３Ｂに位置ズレは生じない。   The film formation mask 20a is maintained at the same predetermined temperature as that of the heat transfer medium. Even if the film formation process is repeated on a plurality of substrates 50, deformation of the film formation mask 20a due to heat is suppressed. No positional deviation occurs in the formed thin films 53R, 53G, and 53B.

赤色、緑色、青色発光層の薄膜５３Ｒ、５３Ｇ、５３Ｂを成膜した基板５０を真空槽１１の外側に搬出した後、赤色、緑色、青色発光層の薄膜５３Ｒ、５３Ｇ、５３Ｂの表面に電子輸送層と電極層とを順に積層して、カラー表示装置を完成する。   After the substrate 50 on which the red, green, and blue light emitting layer thin films 53R, 53G, and 53B are formed is carried out of the vacuum chamber 11, electron transport is performed on the surfaces of the red, green, and blue light emitting layer thin films 53R, 53G, and 53B. A color display device is completed by sequentially laminating layers and electrode layers.

上述の第一、第二の位置合わせ工程では、真空槽１１に対して成膜マスク２０ａを静止させた状態で基板５０を移動させたが、移動前に通過部２１と対面していた一の成膜領域５１が通過部２１に隣接する遮蔽部２２と対面するように、成膜マスク２０ａと基板５０とを一の移動方向５に平行に通過部２１の幅の距離相対移動させるならば、真空槽１１に対して基板５０を静止させた状態で成膜マスク２０ａを移動させてもよいし、真空槽１１に対して基板５０と成膜マスク２０ａの両方を移動させてもよい。   In the first and second alignment processes described above, the substrate 50 was moved with the film formation mask 20a being stationary with respect to the vacuum chamber 11, but the one that had faced the passage 21 before the movement was moved. If the film formation mask 20a and the substrate 50 are moved relative to each other by a distance of the width of the passage portion 21 in parallel with one movement direction 5 so that the film formation region 51 faces the shielding portion 22 adjacent to the passage portion 21, The film formation mask 20 a may be moved with the substrate 50 being stationary relative to the vacuum chamber 11, or both the substrate 50 and the film formation mask 20 a may be moved relative to the vacuum chamber 11.

上述の第一、第二の成膜工程では、放出装置１５1、１５2を真空槽１１内で静止させた状態で成膜を行ったが、成膜装置１０に放出装置１５1、１５2を成膜マスク２０ａの表面と平行な方向に移動させる放出装置移動装置を追加し、放出装置移動装置により放出装置１５1、１５2を成膜マスク２０ａの表面と平行な方向に移動させながら成膜を行ってもよい。この場合には、放出装置１５1、１５2を静止させた場合よりも、大型の基板５０に対してより均一な膜厚で薄膜を形成できる。 In the first and second film forming steps described above, film formation was performed in a state where the discharge devices 15 1 and 15 2 were stationary in the vacuum chamber 11, but the discharge devices 15 1 and 15 2 were added to the film formation device 10. Is added while moving the release devices 15 1 and 15 2 in the direction parallel to the surface of the film forming mask 20a. A membrane may be performed. In this case, it is possible to form a thin film with a more uniform film thickness on the large substrate 50 than when the discharge devices 15 1 and 15 2 are stationary.

＜第二例の成膜マスクの構造＞
第二例の成膜マスクの構造を説明する。
図１１は第二例の成膜マスク２０ｂの平面図、図１２は同Ｂ−Ｂ線切断断面図である。第二例の成膜マスク２０ｂのうち、第一例の成膜マスク２０ａと同じ構造の部分には同じ符号を付している。 <The structure of the film-forming mask of the second example>
The structure of the film-forming mask of the second example will be described.
FIG. 11 is a plan view of the film forming mask 20b of the second example, and FIG. 12 is a cross-sectional view taken along line BB. In the film deposition mask 20b of the second example, parts having the same structure as those of the film deposition mask 20a of the first example are denoted by the same reference numerals.

第二例の成膜マスク２０ｂでは、第一例の成膜マスク２０ａに遮蔽部２２とは別の遮蔽部２２’が追加されている。
すなわち、第二例の成膜マスク２０ｂでは、通過部２１と遮蔽部２２、２２’とは一の移動方向５に沿って一列に交互に並んで配置され、通過部２１と遮蔽部２２、２２’の並びの一端と他端にはそれぞれ遮蔽部２２、２２’が配置されている。 In the film forming mask 20b of the second example, a shielding part 22 ′ different from the shielding part 22 is added to the film forming mask 20a of the first example.
That is, in the film forming mask 20b of the second example, the passage portions 21 and the shielding portions 22 and 22 ′ are alternately arranged in a line along one movement direction 5, and the passage portions 21 and the shielding portions 22 and 22 are arranged. Shielding portions 22 and 22 'are arranged at one end and the other end of the line of', respectively.

追加された遮蔽部２２’には、内部に伝熱媒体が流れる流路部材２５’が密着して設けられている。追加された遮蔽部２２’と流路部材２５’の構造は、第一例の成膜マスク２０ａの遮蔽部２２と流路部材２５の構造とそれぞれ同じであり説明を省略する。   A channel member 25 ′ through which a heat transfer medium flows is provided in close contact with the added shielding portion 22 ′. The structure of the added shielding part 22 'and the flow path member 25' is the same as the structure of the shielding part 22 and the flow path member 25 of the film forming mask 20a of the first example, and the description thereof is omitted.

第二例の成膜マスク２０ｂでは、通過部２１は二つの遮蔽部２２、２２’の間に挟まれ、二つの遮蔽部２２、２２’と長手方向を密着して配置されている。そのため、通過部２１は長手方向の二辺からの熱伝導により冷却又は加熱され、第一例の成膜マスク２０ａより冷却効率及び加熱効率が高く、通過部２１の熱による変形をより効果的に抑制できるようになっている。   In the film forming mask 20b of the second example, the passage part 21 is sandwiched between the two shielding parts 22 and 22 ', and is arranged in close contact with the two shielding parts 22 and 22' in the longitudinal direction. Therefore, the passage part 21 is cooled or heated by heat conduction from two sides in the longitudinal direction, and the cooling efficiency and the heating efficiency are higher than those of the film forming mask 20a of the first example, and the deformation of the passage part 21 due to heat is more effective. It can be suppressed.

第二例の成膜マスク２０ｂは上述の成膜装置１０において第一例の成膜マスク２０ａの代わりに用いることができる。
第二例の成膜マスク２０ｂを用いた薄膜の形成方法は、第一例の成膜マスク２０ａを用いた薄膜の形成方法と比べて、第一の位置合わせ工程以外は同じであり、第一の位置合わせ工程以外の各工程の説明は省略する。
第二例の成膜マスク２０ｂを用いた薄膜の形成方法の第一の位置合わせ工程を赤色発光層の成膜を例に説明する。 The film forming mask 20b of the second example can be used in place of the film forming mask 20a of the first example in the film forming apparatus 10 described above.
The method for forming a thin film using the film formation mask 20b of the second example is the same as the method for forming a thin film using the film formation mask 20a of the first example, except for the first alignment step. The description of each process other than the alignment process is omitted.
The first alignment process of the thin film forming method using the film forming mask 20b of the second example will be described by taking the red light emitting layer as an example.

上述の準備工程を終えた後、撮像装置４４により、基板５０の第一の赤色基板位置合わせマーク５８1と、成膜マスク２０ｂのマスク位置合わせマーク２８をそれぞれ撮像する。
制御装置４３は、撮像装置４４の撮像結果から第一の赤色基板位置合わせマーク５８1とマスク位置合わせマーク２８の相対位置の誤差量を求め、移動装置４１に制御信号を送って、誤差量を減少させるように基板５０と成膜マスク２０ｂとを相対移動させ、図１３を参照し、第一の赤色基板位置合わせマーク５８1とマスク位置合わせマーク２８とを対面させる。このとき第一の成膜領域５１の赤色発光層の画素領域は通過部２１の開口２３と対面し、第二の成膜領域５２は追加された遮蔽部２２’と対面して遮蔽される。 After completing the above preparation step, by the imaging device 44, a first red substrate alignment marks 58 1 of the substrate 50, for imaging the mask alignment marks 28 of the deposition mask 20b, respectively.
Controller 43 obtains the error amount from the imaging result of the imaging device 44 relative positions of the first red substrate alignment marks 58 1 and the mask alignment mark 28, sends a control signal to the mobile device 41, the error amount by relatively moving the substrate 50 and the deposition mask 20b to decrease, with reference to FIG. 13, to face the first red substrate alignment marks 58 1 and the mask alignment mark 28. At this time, the pixel region of the red light emitting layer in the first film formation region 51 faces the opening 23 of the passage portion 21, and the second film formation region 52 faces and shields the added shielding portion 22 ′.

図４を参照し、磁石移動装置４６ｂにより磁石４６ａを移動させて基板５０の裏面と接触する位置で静止させ、通過部２１の表面を基板５０の表面に密着させ、次いで上述の第一の成膜工程を行う。   Referring to FIG. 4, the magnet 46a is moved by the magnet moving device 46b and stopped at a position where it contacts the back surface of the substrate 50, the surface of the passage portion 21 is brought into close contact with the surface of the substrate 50, and then the first component described above is performed. A film process is performed.

本実施例では、第一例の成膜マスク２０ａを用いた薄膜の形成方法の第一の位置合わせ工程とは異なり、第二の成膜領域５２は追加された遮蔽部２２’に遮蔽されて成膜マスク２０ｂの外周の外側に露出しないため、補助遮蔽部材６０を用いて第二の成膜領域５２を遮蔽する手間を省略できる。また補助遮蔽部材６０は不要となるため、成膜装置１０から補助遮蔽部材６０を省略でき、コストの削減になる。   In this embodiment, unlike the first alignment step of the thin film formation method using the film formation mask 20a of the first example, the second film formation region 52 is shielded by the added shielding portion 22 ′. Since it is not exposed to the outside of the outer periphery of the film forming mask 20b, the trouble of shielding the second film forming region 52 using the auxiliary shielding member 60 can be omitted. In addition, since the auxiliary shielding member 60 is not necessary, the auxiliary shielding member 60 can be omitted from the film forming apparatus 10 and the cost can be reduced.

＜第三例の成膜マスクの構造＞
第三例の成膜マスクの構造を説明する。
図１４は第三例の成膜マスク２０ｃの平面図、図１５は同Ｃ−Ｃ線切断断面図である。第三例の成膜マスク２０ｃのうち、第一例の成膜マスク２０ａと同じ構造の部分には同じ符号を付している。 <Structure of film formation mask of third example>
The structure of the film forming mask of the third example will be described.
FIG. 14 is a plan view of the film forming mask 20c of the third example, and FIG. 15 is a sectional view taken along the line CC of FIG. Of the film deposition mask 20c of the third example, parts having the same structure as those of the film deposition mask 20a of the first example are denoted by the same reference numerals.

第三例の成膜マスク２０ｃは、第一例の成膜マスク２０ａの通過部２１と遮蔽部２２の代わりに、通過部２１1、２１2、２１3と遮蔽部２２1、２２2、２２3とをそれぞれ複数個有している。各通過部２１1、２１2、２１3と各遮蔽部２２1、２２2、２２3の構造は、第一例の成膜マスク２０ａの通過部２１と遮蔽部２２の構造とそれぞれ同じであり、説明を省略する。 The film formation mask 20c of the third example has passage portions 21 1 , 21 2 , 21 3 and shielding portions 22 1 , 22 2 , 22 instead of the passage portion 21 and the shielding portion 22 of the film formation mask 20a of the first example. 3 and a plurality of each. The structures of the passage parts 21 1 , 21 2 , 21 3 and the shielding parts 22 1 , 22 2 , 22 3 are the same as the structures of the passage part 21 and the shielding part 22 of the film formation mask 20a of the first example. The description is omitted.

通過部２１1、２１2、２１3と遮蔽部２２1、２２2、２２3とは、成膜マスク２０ｃの表面と平行な一の移動方向５に沿って一列に交互に並んで配置され、隣り合う通過部２１1、２１2、２１3と遮蔽部２２1、２２2、２２3は長手方向を密着されている。
各遮蔽部２２1、２２2、２２3には、内部に伝熱媒体が流れる流路部材２５1、２５2、２５3が密着して設けられている。流路部材２５1、２５2、２５3の構造は第一例の成膜マスク２０ａの流路部材２５の構造と同じであり、説明を省略する。 The passage portions 21 1 , 21 2 , 21 3 and the shielding portions 22 1 , 22 2 , 22 3 are alternately arranged in a line along one movement direction 5 parallel to the surface of the film formation mask 20c, Adjacent passage parts 21 1 , 21 2 , 21 3 and shielding parts 22 1 , 22 2 , 22 3 are in close contact with each other in the longitudinal direction.
Channel members 25 1 , 25 2 , 25 3 through which the heat transfer medium flows are provided in close contact with the shields 22 1 , 22 2 , 22 3 . The structure of the flow path members 25 1 , 25 2 , 25 3 is the same as the structure of the flow path member 25 of the film forming mask 20a of the first example, and the description thereof is omitted.

第三例の成膜マスク２０ｃでは、成膜対象である基板の大きさが第一例の成膜マスク２０ａのときと同じ場合には、通過部２１1、２１2、２１3の幅を第一例の成膜マスク２０ａの通過部２１より小さく形成することができる。第一例の成膜マスク２０ａの通過部２１より通過部２１1、２１2、２１3の幅が小さいと、通過部２１1、２１2、２１3の熱容量が小さくなり、冷却効率及び加熱効率が高くなる。そのため、流路部材２５1、２５2、２５3内に伝熱媒体を流すことで、第一例の成膜マスク２０ａより通過部２１1、２１2、２１3の熱による変形を効果的に抑制できる。 In the film deposition mask 20c of the third example, when the size of the substrate to be deposited is the same as that of the film deposition mask 20a of the first example, the widths of the passing portions 21 1 , 21 2 , 21 3 are It can be formed smaller than the passage portion 21 of the film forming mask 20a as an example. When the first example passage portion 21 1 of the pass portion 21 of the deposition masks 20a of, 21 2, 21 3 of the width is small, the heat capacity of the passage unit 21 1, 21 2, 21 3 is reduced, the cooling efficiency and heating efficiency Becomes higher. Therefore, by flowing a heat transfer medium through the flow path members 25 1 , 25 2 , 25 3 , the passage portions 21 1 , 21 2 , 21 3 are effectively deformed by heat from the film formation mask 20a of the first example. Can be suppressed.

成膜対象である基板の大型化に伴って成膜マスク２０ｃを大型化する場合には、通過部２１1、２１2、２１3と遮蔽部２２1、２２2、２２3の大きさを変えずに、数を増やせばよい。すると、大型の通過部２１1、２１2、２１3を製作する手間が不要となり、成膜マスク２０ｃの大型化が容易になる。また、成膜マスク２０ｃを大型化しても通過部２１1、２１2、２１3の大きさが変わらなければ、冷却効率及び加熱効率は変わらず、流路部材２５1、２５2、２５3内に伝熱媒体を流すことで、通過部２１1、２１2、２１3の熱による変形を抑制することができる。 When the deposition mask 20c is increased in size with an increase in the size of the substrate to be deposited, the sizes of the passage portions 21 1 , 21 2 , 21 3 and the shielding portions 22 1 , 22 2 , 22 3 are changed. Instead, increase the number. This eliminates the need for manufacturing the large passage portions 21 1 , 21 2 , and 21 3 and facilitates the enlargement of the film formation mask 20c. Further, if the size of the passage portions 21 1 , 21 2 , 21 3 does not change even if the film formation mask 20c is enlarged, the cooling efficiency and the heating efficiency are not changed, and the flow path members 25 1 , 25 2 , 25 3 to by flowing a heat transfer medium, it is possible to suppress deformation due to heat of the passing portions 21 1, 21 2, 21 3.

第三例の成膜マスク２０ｃは上述の成膜装置１０において第一例の成膜マスク２０ａの代わりに用いることができる。
第三例の成膜マスク２０ｃを用いた薄膜の形成方法は、第一例の成膜マスク２０ａを用いた薄膜の形成方法と同様であり、説明を省略する。
第三例の成膜マスク２０ｃでは通過部２１1、２１2、２１3の幅の長さが第一例の成膜マスク２０ａより小さくできるので、第二の位置合わせ工程において成膜マスク２０ｃと基板５０とを移動装置４１により相対移動させる移動距離は短くなり、成膜装置１０を小型化できる。 The film deposition mask 20c of the third example can be used in place of the film deposition mask 20a of the first example in the film deposition apparatus 10 described above.
The method for forming a thin film using the film forming mask 20c of the third example is the same as the method for forming a thin film using the film forming mask 20a of the first example, and the description thereof is omitted.
In the film deposition mask 20c of the third example, the widths of the passage portions 21 1 , 21 2 , and 21 3 can be made smaller than those of the film deposition mask 20a of the first example. The moving distance for moving the substrate 50 relative to the substrate 50 by the moving device 41 is shortened, and the film forming apparatus 10 can be downsized.

第三例の成膜マスク２０ｃには、第二例の成膜マスク２０ｂの遮蔽部２２’と同様に別の遮蔽部が追加され、通過部２１1、２１2、２１3と遮蔽部２２1、２２2、２２3の並びの一端と他端には符号２２3の遮蔽部と追加された遮蔽部とがそれぞれ配置された構造も本発明に含まれる。 Another shielding part is added to the film-forming mask 20c of the third example in the same manner as the shielding part 22 'of the film-forming mask 20b of the second example, and the passage parts 21 1 , 21 2 , 21 3 and the shielding part 22 1 are added. , 22 2 , 22 3 are also included in the present invention in a structure in which a shield part 22 3 and an added shield part are respectively arranged at one end and the other end.

＜第四例の成膜マスクの構造＞
第四例の成膜マスクの構造を説明する。
図１６は第四例の成膜マスク２０ｄの平面図、図１７は同Ｄ−Ｄ線切断断面図である。第四例の成膜マスク２０ｄのうち、第一例の成膜マスク２０ａと同じ構造の部分には同じ符号を付している。 <Structure of film forming mask of fourth example>
The structure of the film formation mask of the fourth example will be described.
FIG. 16 is a plan view of the film forming mask 20d of the fourth example, and FIG. 17 is a sectional view cut along the line DD. Of the film deposition mask 20d of the fourth example, parts having the same structure as those of the film deposition mask 20a of the first example are denoted by the same reference numerals.

第四例の成膜マスク２０ｄは、第一例の成膜マスク２０ａの遮蔽部２２の代わりに、成膜物質を遮蔽する遮蔽部３０を有しており、この遮蔽部３０は複数の単位遮蔽部２２ａ、２２ｂで構成されている。本実施例では遮蔽部３０は二個の単位遮蔽部２２ａ、２２ｂで構成されているが、三個以上の単位遮蔽部で構成されている場合も本発明に含まれる。   The film forming mask 20d of the fourth example has a shielding part 30 that shields the film forming material instead of the shielding part 22 of the film forming mask 20a of the first example, and this shielding part 30 has a plurality of unit shields. It consists of parts 22a and 22b. In this embodiment, the shielding unit 30 is composed of two unit shielding units 22a and 22b, but the present invention includes a case where the shielding unit 30 is composed of three or more unit shielding units.

通過部２１と単位遮蔽部２２ａ、２２ｂとは長手方向を有し、単位遮蔽部２２ａ、２２ｂの長手方向の長さは、通過部２１の長手方向の長さ以上にされている。また、単位遮蔽部２２ａ、２２ｂの幅の長さは、通過部２１の幅の長さと同じに形成されている。   The passage portion 21 and the unit shielding portions 22a and 22b have a longitudinal direction, and the length of the unit shielding portions 22a and 22b in the longitudinal direction is greater than or equal to the length of the passage portion 21 in the longitudinal direction. Further, the widths of the unit shielding portions 22 a and 22 b are formed to be the same as the width of the passage portion 21.

各単位遮蔽部２２ａ、２２ｂは、成膜マスク２０ｄ表面と平行な一の移動方向５に沿って一列に並んで配置され、隣り合う二つの単位遮蔽部２２ａ、２２ｂは長手方向を密着され、単位遮蔽部２２ａ、２２ｂの並びの一端に位置する一の単位遮蔽部２２ａと通過部２１とは、一の移動方向５に沿って長手方向を密着して並んで配置されている。   The unit shielding portions 22a and 22b are arranged in a line along one movement direction 5 parallel to the surface of the film formation mask 20d, and the two adjacent unit shielding portions 22a and 22b are in close contact with each other in the longitudinal direction. The one unit shielding part 22a and the passage part 21 located at one end of the arrangement of the shielding parts 22a and 22b are arranged along the one moving direction 5 in close contact with each other in the longitudinal direction.

成膜マスク２０ｄが一の移動方向５の通過部２１側に通過部２１の幅の距離移動すると、開口２３が位置していた場所が、通過部２１に隣接する一の単位遮蔽部２２ａによって塞がれるように構成されている。   When the film formation mask 20d is moved a distance of the width of the passage portion 21 toward the passage portion 21 side in one movement direction 5, the location where the opening 23 is located is blocked by one unit shielding portion 22a adjacent to the passage portion 21. It is configured to be removed.

単位遮蔽部２２ａ、２２ｂの少なくとも一個には伝熱媒体が流れる流路部材２５ａ、２５ｂが密着して設けられている。流路部材２５ａ、２５ｂの構造は第一例の成膜マスク２０ａの流路部材２５と同じであり、説明を省略する。   At least one of the unit shielding portions 22a and 22b is provided with the flow path members 25a and 25b through which the heat transfer medium flows. The structure of the flow path members 25a and 25b is the same as that of the flow path member 25 of the film formation mask 20a of the first example, and a description thereof will be omitted.

本実施例では複数の単位遮蔽部２２ａ、２２ｂのそれぞれに別々の流路部材２５ａ、２５ｂが密着して設けられているが、複数の単位遮蔽部２２ａ、２２ｂに共通して一個の流路部材が設けられた構造も本発明に含まれる。   In the present embodiment, separate flow path members 25a and 25b are provided in close contact with each of the plurality of unit shielding portions 22a and 22b, but one flow path member is shared by the plurality of unit shielding portions 22a and 22b. A structure provided with is also included in the present invention.

また、複数の単位遮蔽部２２ａ、２２ｂには、流路部材が設けられていない単位遮蔽部を含んだ構造も本発明に含まれるが、流路部材が設けられた単位遮蔽部の数が多い方が、通過部２１の冷却効率及び加熱効率が高くなるため好ましい。   Further, the present invention includes a structure in which the unit shielding portions 22a and 22b include a unit shielding portion in which no flow path member is provided, but the number of unit shielding portions in which the flow path member is provided is large. This is preferable because the cooling efficiency and heating efficiency of the passage portion 21 are increased.

第四例の成膜マスク２０ｄでは、第一例の成膜マスク２０ａに比べて、流路部材２５ａ、２５ｂとの接触面積を大きく構成できるため、通過部２１の冷却効率及び加熱効率が第一例の成膜マスク２０ａより高くなり、通過部２１の熱による変形をより効果的に抑制できるようになっている。   In the film formation mask 20d of the fourth example, the contact area with the flow path members 25a and 25b can be configured larger than the film formation mask 20a of the first example, so that the cooling efficiency and the heating efficiency of the passage portion 21 are the first. It becomes higher than the film forming mask 20a of the example, and the deformation of the passage part 21 due to heat can be suppressed more effectively.

第四例の成膜マスク２０ｄは上述の成膜装置１０において第一例の成膜マスク２０ａの代わりに用いることができる。
第四例の成膜マスク２０ｄを用いた薄膜の形成方法を説明する。
まず、第一例の成膜マスク２０ａを用いた薄膜の形成方法と同様にして、準備工程を行う。 The film formation mask 20d of the fourth example can be used in place of the film formation mask 20a of the first example in the film formation apparatus 10 described above.
A method for forming a thin film using the film formation mask 20d of the fourth example will be described.
First, a preparation process is performed in the same manner as in the thin film formation method using the film formation mask 20a of the first example.

ただし、基板５０の表面に、成膜マスク２０ｄの通過部２１と同形状の成膜領域を、一の遮蔽部３０が有する単位遮蔽部２２ａ、２２ｂの数より一個多い数予め定めておく。複数の成膜領域は、基板５０の表面と平行な一の直線に沿って長手方向を密着して並んで配置する。   However, the number of film-forming regions having the same shape as the passage part 21 of the film-forming mask 20d is determined in advance on the surface of the substrate 50, which is one more than the number of unit shielding parts 22a and 22b included in one shielding part 30. The plurality of film formation regions are arranged along the longitudinal direction in close contact along a straight line parallel to the surface of the substrate 50.

また、基板５０のうち、各成膜領域を通過部２１と対面させたときに、マスク位置合わせマーク２８と対面する位置にはそれぞれ基板位置合わせマークを設けておく。
次いで、第一例の成膜マスク２０ａを用いた薄膜の形成方法と同様にして、第一の位置合わせ工程を行って、複数の成膜領域のうち一の成膜領域の赤色発光層の画素領域を通過部２１の開口２３と対面させ、第一の成膜工程を行って、通過部２１の開口２３と対面する一の成膜領域の赤色発光層の画素領域に赤色発光層の薄膜を形成する。 Further, a substrate alignment mark is provided at a position facing the mask alignment mark 28 when each film formation region faces the passage portion 21 in the substrate 50.
Next, in the same manner as in the thin film formation method using the film formation mask 20a of the first example, the first alignment step is performed, and the pixel of the red light emitting layer in one film formation region among the plurality of film formation regions. The region is made to face the opening 23 of the passage portion 21, and the first film forming process is performed, and the thin film of the red light emitting layer is formed on the pixel region of the red light emitting layer of the one film formation region facing the opening 23 of the passage portion 21. Form.

次いで、第一例の成膜マスク２０ａを用いた薄膜の形成方法と同様にして、第二の位置合わせ工程を行って、移動前に通過部２１と対面していた一の成膜領域が通過部２１に隣接する一の単位遮蔽部２２ａと対面するように、成膜マスク２０ｄと基板５０とを一の移動方向５に平行に通過部２１の幅の距離相対移動させた後、第二の成膜工程を行って、通過部２１の開口２３と対面する別の成膜領域の赤色発光層の画素領域に赤色発光層の薄膜を形成する（単位成膜工程）。   Next, in the same manner as the thin film formation method using the film formation mask 20a of the first example, the second alignment step is performed, and one film formation region facing the passage portion 21 before moving passes. After the film formation mask 20d and the substrate 50 are moved relative to each other by a distance of the width of the passage part 21 in parallel with the one movement direction 5 so as to face one unit shielding part 22a adjacent to the part 21, A film forming step is performed to form a red light emitting layer thin film in the pixel region of the red light emitting layer in another film forming region facing the opening 23 of the passage portion 21 (unit film forming step).

上述の単位成膜工程を合計で、一の遮蔽部３０が有する単位遮蔽部２２ａ、２２ｂの数と同じ回数繰り返し行って、基板５０上の複数の成膜領域のすべての赤色発光層の画素領域に開口２３と同じパターン形状の赤色発光層の薄膜を形成する。
赤色発光層の成膜工程と同様にして、基板５０上の複数の成膜領域のすべての緑色、青色発光層の画素領域に緑色、青色発光層の薄膜を順に形成する。
第一例の成膜マスク２０ａを用いた薄膜の形成方法と同様にして、基板交換工程と上述の各工程とを繰り返して複数枚の基板に赤色、緑色、青色発光層の薄膜を形成する。 The unit film forming process described above is repeated in the same number of times as the number of the unit shielding parts 22a and 22b included in one shielding part 30, and the pixel areas of all the red light emitting layers in the plurality of film forming areas on the substrate 50 A thin film of a red light emitting layer having the same pattern shape as the opening 23 is formed.
In the same manner as the red light emitting layer forming step, green and blue light emitting layer thin films are sequentially formed in all the green and blue light emitting layer pixel regions of the plurality of film forming regions on the substrate 50.
Similar to the method of forming a thin film using the film formation mask 20a of the first example, the substrate replacement process and the above-described processes are repeated to form red, green, and blue light emitting layer thin films on a plurality of substrates.

第四例の成膜マスク２０ｄには、第二例の成膜マスク２０ｂの遮蔽部２２’と同様に別の遮蔽部が追加され、通過部２１と遮蔽部３０の並びの一端と他端には符号３０の遮蔽部と追加された遮蔽部とがそれぞれ配置された構造も本発明に含まれる。   In the film formation mask 20d of the fourth example, another shielding part is added similarly to the shielding part 22 ′ of the film formation mask 20b of the second example, and one end and the other end of the arrangement of the passage part 21 and the shielding part 30 are provided. In the present invention, a structure in which a shield part 30 and an added shield part are respectively arranged is also included in the present invention.

また、第四例の成膜マスク２０ｄには、第三例の成膜マスク２０ｃと同様に、通過部２１と遮蔽部３０とをそれぞれ複数個有し、複数の通過部２１と遮蔽部３０とは、成膜マスク２０ｄの表面と平行な一の移動方向５に沿って一列に交互に並んで配置され、隣り合う通過部２１と遮蔽部３０は互いに密着された構造も本発明に含まれる。   Similarly to the film formation mask 20c of the third example, the film formation mask 20d of the fourth example includes a plurality of passage portions 21 and shielding portions 30, respectively. Are arranged alternately in a line along one movement direction 5 parallel to the surface of the film formation mask 20d, and the structure in which the adjacent passage portions 21 and the shielding portions 30 are in close contact with each other is also included in the present invention.

５……一の移動方向
１０……成膜装置
１１……真空槽
１２……真空排気装置
１５1、１５2……放出装置
１６1、１６2……放出口
２０ａ、２０ｂ、２０ｃ、２０ｄ……成膜マスク
２１、２１1、２１2、２１3……通過部
２２、２２’、２２1、２２2、２２3、３０……遮蔽部
２２ａ、２２ｂ……単位遮蔽部
２３……開口
２５、２５’、２５1、２５2、２５3、２５ａ、２５ｂ……流路部材
４１……移動装置
５０……基板
５１……第一の成膜領域
５２……第二の成膜領域
５３Ｒ、５３Ｇ、５３Ｂ……赤色、緑色、青色発光層の薄膜
5... One moving direction 10... Deposition apparatus 11... Vacuum chamber 12. Evacuation apparatus 15 1 , 15 2 ... Release apparatus 16 1 , 16 2 ... Release port 20 a, 20 b, 20 c, 20 d. ... Masks 21, 21 1 , 21 2 , 21 3 ... Passing portions 22, 22 ′, 22 1 , 22 2 , 22 3 , 30... Shielding portions 22 a, 22 b. 25 ′, 25 1 , 25 2 , 25 3 , 25a, 25b... Channel member 41... Moving device 50... Substrate 51... First film formation region 52. 53G, 53B: Thin films of red, green and blue light emitting layers

Claims (6)

真空槽と、
前記真空槽内を真空排気する真空排気装置と、
前記真空槽内に露出する放出口から成膜物質を放出する放出装置と、
前記放出口と対面する位置に配置された成膜マスクと、
を有し、
前記成膜マスクは、
複数の開口が形成され、成膜物質が前記開口を通過する通過部と、
前記成膜物質を遮蔽する遮蔽部と、
を有する成膜マスクであって、
前記通過部と前記遮蔽部とは長手方向を有し、前記遮蔽部の長手方向の長さは、前記通過部の長手方向の長さ以上にされ、
前記遮蔽部の幅の長さは、前記通過部の幅の長さと同じに形成され、
前記通過部と前記遮蔽部とは、前記成膜マスク表面と平行な一の移動方向に沿って長手方向を密着して並んで配置され、
前記成膜マスクが前記一の移動方向の前記通過部側に前記通過部の幅の距離移動すると、前記開口が位置していた場所が、前記遮蔽部によって塞がれるように構成され、
前記遮蔽部には内部に伝熱媒体が流れる流路部材が密着して設けられた成膜マスクであり、
前記伝熱媒体を冷却又は加熱する恒温装置と、
前記成膜マスクから見て前記放出口とは逆側に前記成膜マスクと対面して配置された基板と、前記成膜マスクとを前記一の移動方向に平行に相対移動させる移動装置と、前記通過部を前記基板の表面に密着させる密着装置と、を有し、
前記通過部は、前記遮蔽部との間の熱伝導により、前記伝熱媒体と同じ温度に冷却又は加熱されるように構成された成膜装置。 A vacuum chamber;
An evacuation device for evacuating the vacuum chamber;
A discharge device for discharging a film-forming substance from a discharge port exposed in the vacuum chamber;
A film mask disposed at a position facing the said discharge outlet,
Have
The film formation mask is
A plurality of openings are formed, and a passage through which the film-forming substance passes through the openings;
A shielding part for shielding the film-forming substance;
A film-formation mask having
The passage part and the shielding part have a longitudinal direction, and the length of the shielding part in the longitudinal direction is not less than the length of the passage part in the longitudinal direction,
The width of the shielding part is formed to be the same as the width of the passage part,
The passage part and the shielding part are arranged in close contact with each other in the longitudinal direction along one movement direction parallel to the film formation mask surface,
When the film-forming mask moves a distance of the width of the passing portion toward the passing portion in the one moving direction, the location where the opening is located is configured to be blocked by the shielding portion,
The shielding portion is a film forming mask provided with a flow path member through which a heat transfer medium flows in close contact ,
A thermostat for cooling or heating the heat transfer medium;
A substrate disposed facing the deposition mask opposite side to the outlet when viewed from the film-forming mask, a moving equipment which relatively moves in parallel between the deposition mask to the direction of movement of said one , have a, an adhesion device for adhering the passage portion on a surface of said substrate,
The film forming apparatus configured such that the passage section is cooled or heated to the same temperature as the heat transfer medium by heat conduction with the shielding section . 真空槽と、
前記真空槽内を真空排気する真空排気装置と、
前記真空槽内に露出する放出口から成膜物質を放出する放出装置と、
前記放出口と対面する位置に配置された成膜マスクと、
を有し、
前記成膜マスクは、
複数の開口が形成され、成膜物質が前記開口を通過する通過部と、
前記成膜物質を遮蔽する遮蔽部と、
を有する成膜マスクであって、
前記遮蔽部は複数の単位遮蔽部で構成され、
前記通過部と前記単位遮蔽部とは長手方向を有し、前記単位遮蔽部の長手方向の長さは、前記通過部の長手方向の長さ以上にされ、
前記単位遮蔽部の幅の長さは、前記通過部の幅の長さと同じに形成され、
各前記単位遮蔽部は、前記成膜マスク表面と平行な一の移動方向に沿って一列に並んで配置され、隣り合う二つの前記単位遮蔽部は長手方向を密着され、
前記単位遮蔽部の並びの一端に位置する一の前記単位遮蔽部と、前記通過部とは、前記一の移動方向に沿って長手方向を密着して並んで配置され、
前記成膜マスクが前記一の移動方向の前記通過部側に前記通過部の幅の距離移動すると、前記開口が位置していた場所が、前記通過部に隣接する一の前記単位遮蔽部によって塞がれるように構成され、
前記単位遮蔽部の少なくとも一個には内部に伝熱媒体が流れる流路部材が密着して設けられた成膜マスクであり、
前記伝熱媒体を冷却又は加熱する恒温装置と、
前記成膜マスクから見て前記放出口とは逆側に前記成膜マスクと対面して配置された基板と、前記成膜マスクとを前記一の移動方向に平行に相対移動させる移動装置と、前記通過部を前記基板の表面に密着させる密着装置と、を有し、
前記通過部は、前記遮蔽部との間の熱伝導により、前記伝熱媒体と同じ温度に冷却又は加熱されるように構成された成膜装置。 A vacuum chamber;
An evacuation device for evacuating the vacuum chamber;
A discharge device for discharging a film-forming substance from a discharge port exposed in the vacuum chamber;
A film mask disposed at a position facing the said discharge outlet,
Have
The film formation mask is
A plurality of openings are formed, and a passage through which the film-forming substance passes through the openings;
A shielding part for shielding the film-forming substance;
A film-formation mask having
The shielding part is composed of a plurality of unit shielding parts,
The passage portion and the unit shielding portion have a longitudinal direction, and the length of the unit shielding portion in the longitudinal direction is equal to or longer than the length of the passage portion in the longitudinal direction,
The width of the unit shielding part is formed to be the same as the width of the passage part,
Each of the unit shielding portions is arranged in a line along one movement direction parallel to the film formation mask surface, and the two adjacent unit shielding portions are closely adhered in the longitudinal direction,
The one unit shielding part located at one end of the arrangement of the unit shielding parts and the passing part are arranged in close contact with each other in the longitudinal direction along the one movement direction,
When the film-forming mask moves a distance of the width of the passing portion toward the passing portion in the one moving direction, the place where the opening is located is blocked by the one unit shielding portion adjacent to the passing portion. Configured to
At least one of the unit shielding parts is a film forming mask in which a flow path member through which a heat transfer medium flows is closely attached ,
A thermostat for cooling or heating the heat transfer medium;
A substrate disposed facing the deposition mask opposite side to the outlet when viewed from the film-forming mask, a moving equipment which relatively moves in parallel between the deposition mask to the direction of movement of said one , have a, an adhesion device for adhering the passage portion on a surface of said substrate,
The film forming apparatus configured such that the passage section is cooled or heated to the same temperature as the heat transfer medium by heat conduction with the shielding section . 前記通過部と前記遮蔽部とをそれぞれ複数個有し、
前記通過部と前記遮蔽部とは、前記一の移動方向に沿って一列に交互に並んで配置され、隣り合う前記通過部と前記遮蔽部は密着された請求項１又は請求項２のいずれか１項記載の成膜装置。 Each having a plurality of the passage portions and the shielding portions;
The said passage part and the said shielding part are alternately arranged in a line along the said 1 movement direction, and the said adjacent passage part and the said shielding part are closely_contact | adhered, either. 2. The film forming apparatus according to 1. 前記通過部と前記遮蔽部の並びの一端と他端にはそれぞれ前記遮蔽部が配置された請求項１乃至請求項３のいずれか１項記載の成膜装置。 4. The film forming apparatus according to claim 1, wherein the shielding portion is disposed at one end and the other end of the passage portion and the shielding portion. 真空排気された真空槽内に放出口から成膜物質を放出させ、前記放出口と対面する位置に配置された基板の表面に薄膜を形成する薄膜の形成方法であって、
請求項１記載の成膜装置を用いて、
前記流路部材の内部に伝熱媒体を流しながら、
前記成膜マスクを前記基板の表面と対面して密着させた状態で、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する一の成膜領域に薄膜を形成した後、密着を解除させ、
移動前に前記通過部と対面して密着していた前記一の成膜領域が前記通過部に隣接する前記遮蔽部と対面するように、前記成膜マスクと前記基板とを前記一の移動方向に平行に前記通過部の幅の距離相対移動させ、前記成膜マスクを前記基板の表面と対面して密着させ、
前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する別の成膜領域に薄膜を形成する薄膜の形成方法。 A method for forming a thin film, wherein a film forming material is discharged from a discharge port into a vacuum evacuated vacuum chamber, and a thin film is formed on a surface of a substrate disposed at a position facing the discharge port,
Using the film forming apparatus according to claim 1,
While flowing a heat transfer medium inside the flow path member,
With the film formation mask facing the surface of the substrate and in close contact therewith, the film formation material is discharged from the discharge port, and a thin film is formed in one film formation region of the substrate surface facing the passage portion. After that, release the close contact ,
The film-forming mask and the substrate are moved in the one moving direction so that the one film-forming region that is in close contact with the passing part before moving faces the shielding part adjacent to the passing part. Parallel movement to the distance of the width of the passage part, the film formation mask is brought into close contact with the surface of the substrate,
A method for forming a thin film, wherein a film forming material is discharged from the discharge port, and a thin film is formed in another film forming region facing the passing portion of the substrate surface. 真空排気された真空槽内に放出口から成膜物質を放出させ、前記放出口と対面する位置に配置された基板の表面に薄膜を形成する薄膜の形成方法であって、
請求項２記載の成膜装置を用いて、
前記流路部材の内部に伝熱媒体を流しながら、
前記成膜マスクを前記基板の表面と対面して密着させた状態で、前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する一の成膜領域に薄膜を形成した後、密着を解除させ、
移動前に前記通過部と対面して密着していた一の成膜領域が前記通過部に隣接する前記単位遮蔽部と対面して密着するように、前記成膜マスクと前記基板とを前記一の移動方向に平行に前記通過部の幅の距離相対移動させ、前記成膜マスクを前記基板の表面と対面して密着させ、
前記放出口から成膜物質を放出させ、前記基板表面のうち前記通過部と対面する別の成膜領域に薄膜を形成する工程を、一の前記遮蔽部が有する前記単位遮蔽部の数と同じ回数繰り返す薄膜の形成方法。 A method for forming a thin film, wherein a film forming material is discharged from a discharge port into a vacuum evacuated vacuum chamber, and a thin film is formed on a surface of a substrate disposed at a position facing the discharge port,
Using the film forming apparatus according to claim 2,
While flowing a heat transfer medium inside the flow path member,
With the film formation mask facing the surface of the substrate and in close contact therewith, the film formation material is discharged from the discharge port, and a thin film is formed in one film formation region of the substrate surface facing the passage portion. After that , release the close contact,
As one deposition area in close contact with facing the passage portion before moving to contact with facing the unit shielding portion adjacent to the passage portion, said and said substrate and said deposition mask one The relative movement of the width of the passage part is parallel to the moving direction of the film , the film formation mask is brought into close contact with the surface of the substrate,
The step of releasing the film-forming substance from the discharge port and forming a thin film in another film-forming region facing the passage part in the substrate surface is the same as the number of the unit shielding parts of the one shielding part. A method of forming a thin film that is repeated a number of times.
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