JP5741565B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP5741565B2 JP5741565B2 JP2012281339A JP2012281339A JP5741565B2 JP 5741565 B2 JP5741565 B2 JP 5741565B2 JP 2012281339 A JP2012281339 A JP 2012281339A JP 2012281339 A JP2012281339 A JP 2012281339A JP 5741565 B2 JP5741565 B2 JP 5741565B2
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- 239000004065 semiconductor Substances 0.000 title claims description 215
- 229920005989 resin Polymers 0.000 claims description 47
- 239000011347 resin Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 206010040844 Skin exfoliation Diseases 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000009499 grossing Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/732—Location after the connecting process
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Description
図1は本発明の実施の形態1に係るモータ駆動回路を示す回路ブロック図であり、図2は図1の半導体モジュールの回路図である。図1に示した電力変換装置1は、三相インバータの例である。電力変換装置1は、直流高圧電源2から供給される直流電力を交流電力に変換し、回転機(モータ)3を駆動する。電力変換装置1は、電力経路の接続端子として、一次側に正極端子Pdc、負極端子Ndc、二次側にUac端子、Vac端子、Wac端子を備えている。一次側の正極端子Pdc、負極端子Ndcには、直流高圧電源2が接続され、直流電力の導通路となっている。二次側には三相交流の回転機3のU相がUac端子に、V相がVac端子に、W相がWac端子に接続され、交流電力の導通路となっている。このモータ駆動回路は、後述するスイッチ素子によって断続される電流が流れる主回路と、スイッチ素子のオン、オフを制御する制御回路(図示せず)から構成されている。
次に、本発明の実施の形態2に関して、以下に図を用いて説明する。回路ブロック図や半導体モジュールのモールド樹脂内の素子の構成等は、実施の形態1と同様であり、実施の形態1と異なる点、新たな点について詳述する。図6は、電力変換装置の実装形態を示す図である。図6は、電力変換装置1として、三相インバータを構成した場合であり、金属ベース20bに対して、3個の半導体モジュール8u、8v、8wの搭載状態を模式的に示している。U相アームに対応する半導体モジュール8u、V相アームに対応する半導体モジュール8v、W相アームに対応する半導体モジュール8wのそれぞれが金属ベース20bの上面へ整列して配置される。
次に、本発明の実施の形態3に関して、図9を用いて説明する。図9は、本発明の実施の形態3に係る半導体モジュールの回路図である。実施の形態1では、半導体モジュール8(8u、8v、8w)に封止されるパワー半導体素子100として、シリコン半導体材料によるバイポーラ型半導体のIGBT、同じくバイポーラ型半導体のPiNダイオードを用いたが、図9ではユニポーラ型のパワー半導体素子を用いる例を示しており、いずれも、一つのアームを構成単位としている。
本発明に関する実施の形態を、実施の形態1〜3によって説明したが、これらは本発明の好適な実施事例を例示したものに過ぎない。例えば、後述の図11に示す太陽光発電におけるDC−DCコンバータやインバータに適用するものであっても良い。
5、5a、5b IGBT
6、6a、6b PiNダイオード
7、7u、7v、7w スナバ回路
7a、7ua 抵抗素子
7b、7ub コンデンサ素子
7c、7uc 実装基板
8、8u、8v、8w 半導体モジュール
10、10a、10b、10c 主端子
14 共締め孔
15 ネジ部材
16、16a、16b、16c 金属フレーム
18 モールド樹脂
26a、26b ショットキーバリアダイオード
27a、27b MOS−FET
31 フレーム受台基部
32 フレーム受台蓋部
33 第1導通体
34 第2導通体
35、36 フレーム受台
100、100a、100b パワー半導体素子
101a、101b インバータ
102 DC−DCコンバータ
Claims (5)
- スイッチ素子及び前記スイッチ素子に逆並列に接続された整流素子を有するパワー半導体素子を内蔵し、前記スイッチ素子により断続される電流が流れる主回路と電気的に接続する複数の主端子が外部に露出するようにモールド樹脂にて封止された樹脂封止型の半導体モジュールであって、
複数の前記主端子のうち、第1端子及び第2端子は、前記モールド樹脂が形成するいずれかの外面の同じ面から露出しており、
容量性部材を有するとともに前記第1端子及び前記第2端子に架橋するように直接接続され、前記パワー半導体素子で発生するサージ電圧によるノイズを当該端子間でバイパスするスナバ回路部と、
前記第1端子及び前記第2端子を支持するとともに前記スナバ回路部を収容する端子台と、
を備え、
前記スナバ回路部は、
スナバ回路を構成するスナバ回路素子と、
前記スナバ回路素子の一方の端子及び前記第1端子を電気的に接続するように、前記スナバ回路素子の一方の端子及び前記第1端子を付勢する弾性力を有する第1導通体と、
前記スナバ回路素子の他方の端子及び前記第2端子を電気的に接続するように、前記スナバ回路素子の他方の端子及び前記第2端子を付勢する弾性力を有する第2導通体と、
を備える
ことを特徴とする半導体モジュール。 - 前記スイッチ素子及び前記整流素子のうち少なくとも一方は、そのバンドギャップがシリコンより大きいワイドバンドギャップ半導体で構成した
ことを特徴とする請求項1に記載の半導体モジュール。 - 前記ワイドバンドギャップ半導体は、炭化ケイ素、窒化ガリウム系材料、ダイヤモンドのいずれかのワイドバンドギャップ半導体材料により形成されている
ことを特徴とする請求項2に記載の半導体モジュール。 - 車載のインバータに適用され、
前記インバータは車両の駆動用回転機を負荷とするものである
ことを特徴とする請求項1乃至3のいずれかに記載の半導体モジュール。 - 車載のDC−DCコンバータに適用される
ことを特徴とする請求項1乃至3のいずれかに記載の半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012281339A JP5741565B2 (ja) | 2012-12-25 | 2012-12-25 | 半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012281339A JP5741565B2 (ja) | 2012-12-25 | 2012-12-25 | 半導体モジュール |
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DE112014006915T5 (de) | 2014-08-28 | 2017-05-11 | Mitsubishi Electric Corporation | Leistungswandler und Fahrzeugantriebssystem |
WO2016110977A1 (ja) | 2015-01-08 | 2016-07-14 | 三菱電機株式会社 | 鉄道車両用の冷却装置 |
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JPWO2016199306A1 (ja) * | 2015-06-12 | 2017-06-22 | 三菱電機株式会社 | 端子台付きパワーモジュールおよび端子台付きパワーモジュールの製造方法 |
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JP6448759B1 (ja) * | 2017-12-26 | 2019-01-09 | 三菱電機株式会社 | 電力変換装置 |
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JP6488421B1 (ja) | 2018-09-12 | 2019-03-20 | 高周波熱錬株式会社 | スナバ回路及びパワー半導体モジュール並びに誘導加熱用電源装置 |
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JP3685183B2 (ja) * | 2003-06-02 | 2005-08-17 | 株式会社日立製作所 | 電力変換装置と回路基板装置並びにそれらの構成方法 |
JP2007053839A (ja) * | 2005-08-17 | 2007-03-01 | Toshiba Corp | スナバ回路及びこれを用いた電力変換装置 |
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