JP5733497B2 - 二重気孔構造研磨パッド - Google Patents
二重気孔構造研磨パッド Download PDFInfo
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- JP5733497B2 JP5733497B2 JP2010216044A JP2010216044A JP5733497B2 JP 5733497 B2 JP5733497 B2 JP 5733497B2 JP 2010216044 A JP2010216044 A JP 2010216044A JP 2010216044 A JP2010216044 A JP 2010216044A JP 5733497 B2 JP5733497 B2 JP 5733497B2
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Classifications
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6633—Compounds of group C08G18/42
- C08G18/6637—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/664—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
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Landscapes
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- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本発明の一つの局面は、磁性、光学および半導体基材の少なくとも1種の研磨に有効な研磨パッドであって、多孔質研磨層を含み、多孔質研磨層がポリウレタンマトリックス内に二重気孔構造を有し、二重気孔構造が第1の気孔群を有し、第1の気孔群が孔壁を有し、孔壁が厚さ15〜55μm、25℃で測定した貯蔵弾性率10〜60MPaを有し、そして孔壁内に第2の気孔群を含有し、第2の気孔群の平均孔径が5〜30μmであり、多孔質研磨層を、ポリマーフィルムまたはシート基材に固定するか、あるいは織物または不織構造に作って形成する研磨パッドを提供する。
本発明の研磨パッドは、磁性、光学および半導体基材の少なくとも1種の研磨に有効である。特に、本ポリウレタンパッドは、半導体ウエーハの研磨に有効であり;そして特に、本パッドは、欠陥度が極めて低いことが平坦化する能力よりも重要であり、そして複数の材料、例えば銅、バリヤ金属および絶縁材料(TEOS、low−kおよび超low−k絶縁材を含むがこれらに限定されない)を同時に除去する必要がある先端の用途、例えば銅バリヤ用途の研磨に有効である。本明細書において、「ポリウレタン」とは、二官能性または多官能性イソシアネートから誘導される生成物、例えばポリエーテルウレア、ポリイソシアヌレート、ポリウレタン、ポリウレア、ポリウレタンウレア、これらのコポリマーおよびこれらの混合物である。発泡の発生および絶縁材汚染の可能性を回避するために、これらの配合物は、界面活性剤フリー配合物であるのが有利である。研磨パッドは、支持ベース基材上にコーティングされたポリウレタンマトリックス内に、二重気孔構造を有する多孔質研磨層を含む。二重気孔構造は、大きな気孔の第1群、並びにこの大きな気孔の気泡壁内およびその間の小さな気孔の第2群を有する。この二重気孔構造は、欠陥を減らす働きをする一方で、研磨システムの一部に対して除去速度を上げる。
表1に、以下の例に記載されたパッドの特性をまとめる。全体的なパッド特性、マクロ孔の計測データ、研磨データ、およびポロメリック研磨パッドを定義するいくつかの特徴に対する値を含む。例1〜3は、市販ポリウレタンポロメリック研磨パッドの比較例を表す。例4〜7は、市販研磨パッドよりも改良された研磨性能を示す研磨パッドを表す。
DMA測定:ポロメリックコーティングの孔壁を形成するポリマーの引張貯蔵弾性率を、キャストフィルムの動的機械分析により測定した。これらは、ジメチルホルムアミドに溶解したポリマーをガラス板上にコーティングし、溶剤を高温で除去し、次に乾燥したコーティングをガラス板から取り外して、気泡および他の欠点を含まない、厚さ約300ミクロンの独立したフィルムを残すことにより調製した。25℃および相対湿度50%で5日間のフィルムコンディショニングの後、Rheometric Scientific(商標)Solids Analyzer RSA IIIを用いて、引張貯蔵弾性率を測定した。引張測定を、薄膜治具を用い、周波数10rad/secおよび温度25℃で、ASTM D5026-06 "Standard Test Method for Plastics: Dynamic Mechanical Properties: In Tension"にしたがって行った。サンプルの寸法は長さ20mm、幅6.5mmであった。
w =(A/πP)1/2−(MPA/π)1/2
を用いて算出した。
比較パッドAは、半導体ウエーハの研磨に長年広く用いられているポリウレタンポロメリックパッドであった。
比較パッドBは、半導体ウエーハ研摩に用いられている、Fujibo CorporationからH7000HN-PETの呼称で販売される、ポリウレタンポロメリックパッドであった。このパッドは、研磨層をポリエステルフィルム基材上にコーティングされるほかは、例1で用いたのと同様のプロセスにより製造されるようであり、そして気孔構造を制御するために配合物に添加された界面活性剤、例えばジオクチルスルホコハク酸ナトリウムを含んでいた。比較パッドBの気孔構造は、比較パッドAのそれと異なっていた。比較パッドBは、大きなマクロ孔およびマクロ孔の孔壁内のより小さなミクロ孔の両方からなる気孔構造を有していた。
比較パッドCは、ケイ素ウエーハ研摩に用いられているポロメリックパッドであった。このパッドは、Dow Electronic MaterialsによりSPM3100の呼称で製造された。このパッドは、研磨層をポリエステルフィルム基材上にコーティングしたほかは、例1で用いたのと同様のプロセスにより製造した。比較パッドCは、望ましい気孔形態を有し、大小両方の気孔と望ましい壁厚さとを有するが、孔壁内のポリマーのモジュラスは、低欠陥度研磨には高すぎた。この例は、低欠陥研磨用途の要求に必要な極めて低い欠陥レベルを達成するために、孔壁内のポリマーのモジュラスを、臨界値未満に制御する必要性を明示した。また、TEOS:Cu除去速度選択比は、先端の低欠陥または将来の研磨ニーズに対して許容し難いほど低かった。
ポリウレタンを、DMF中で、ポリエチレンプロピレングリコールアジペートポリオール(0.0102モル)およびブタンジオール(0.0354モル)の混合物を、ジフェニルメタンジイソシアネート(MDI)(0.0454モル)と反応させることにより、重量平均分子量50,000および分散度1.6を有するポリウレタンを形成することで合成した。得られたポリウレタン溶液の室温粘度は、固形分25wt%で、約3000cPであった。界面活性剤は、配合物中に含まれなかった。
例4において、ポリウレタン溶液のウエット厚さ75milの層を17℃で製造したが、それをポリウレタン含浸不織ポリエステルフェルト基材上にコーティングした。基材(Dow Electronic Materials製)は、密度0.340g/cm3、圧縮率14%、厚さ49mil(1.2mm)および硬度49Shore DOであった。
例4においてポリウレタン溶液のウエット厚さ75milの層を、17℃で製造し、ポリウレタン含浸不織ポリエステルフェルト基材上にコーティングした。この基材(Dow Electronic Materials製)は、密度0.318g/cm3、圧縮率17%、厚さ44mil(1.1mm)および硬度39Shore DOを有した。
ポリウレタンを、DMF中で、ポリエチレンプロピレングリコールアジペート(0.0117モル)およびブタンジオール(0.0259モル)の混合物を、ジフェニルメタンジイソシアネート(MDI)(0.0373モル)と反応させることにより、重量平均分子量40,000および分散度1.6を有するポリウレタンを形成することにより合成した。このポリウレタン溶液をフィルム上にコーティングし、そして例4で述べたのと同じプロセス工程および条件を用いて、研磨パッドに変えた。
Claims (3)
- 磁性、光学および半導体基材の少なくとも1種の研磨に有効な研磨パッドであって、多孔質研磨層を含み、多孔質研磨層がポリウレタンマトリックス内に二重気孔構造を有し、二重気孔構造が第1の気孔群を有し、第1の気孔群が孔壁を有し、孔壁が厚さ15〜55μm、25℃で測定した貯蔵弾性率10〜60MPaを有し、および孔壁内に第2の気孔群を含有し、第2の気孔群の平均孔径が5〜30μmであり、および多孔質研磨層を、ポリマーフィルムまたはシート基材に固定するか、あるいは織物または不織構造に作って形成する研磨パッド。
- 第1の気孔の平均直径が、少なくとも35μmである、請求項1の研磨パッド。
- 孔壁の横断面内に位置する第2の気孔群の気孔率が、10〜55%である、請求項1又は2の研磨パッド。
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US12/586,859 US8162728B2 (en) | 2009-09-28 | 2009-09-28 | Dual-pore structure polishing pad |
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CN102029577B (zh) | 2013-05-29 |
CN102029577A (zh) | 2011-04-27 |
KR20110034561A (ko) | 2011-04-05 |
TW201132457A (en) | 2011-10-01 |
US8162728B2 (en) | 2012-04-24 |
US20110076928A1 (en) | 2011-03-31 |
TWI519385B (zh) | 2016-02-01 |
US8408977B2 (en) | 2013-04-02 |
FR2950557A1 (fr) | 2011-04-01 |
DE102010046258A1 (de) | 2011-05-12 |
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