JP5731283B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5731283B2 JP5731283B2 JP2011123576A JP2011123576A JP5731283B2 JP 5731283 B2 JP5731283 B2 JP 5731283B2 JP 2011123576 A JP2011123576 A JP 2011123576A JP 2011123576 A JP2011123576 A JP 2011123576A JP 5731283 B2 JP5731283 B2 JP 5731283B2
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- transistor
- insulating layer
- layer
- electrode
- oxide semiconductor
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成およびその作製方法について、図1乃至図6を参照して説明する。
図1は、半導体装置の構成の一例である。図1(A)には、半導体装置の断面を、図1(B)には、半導体装置の平面を、それぞれ示す。ここで、図1(A)は、図1(B)のA1−A2およびB1−B2における断面に相当する。図1(A)および図1(B)に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ160を有し、上部に第2の半導体材料を用いたトランジスタ162を有する。ここで、第1の半導体材料と第2の半導体材料とは異なる材料とすることが望ましい。例えば、第1の半導体材料を酸化物半導体以外の半導体材料とし、第2の半導体材料を酸化物半導体とすることができる。酸化物半導体以外の半導体材料としては、例えば、シリコン、ゲルマニウム、シリコンゲルマニウム、炭化シリコン、またはガリウムヒ素等を用いることができ、単結晶半導体を用いることが好ましい。他に、有機半導体材料などを用いてもよい。このような半導体材料を用いたトランジスタは、高速動作が容易である。一方で、酸化物半導体を用いたトランジスタは、その特性により長時間の電荷保持を可能とする。図1に示す半導体装置は、メモリセルとして用いることができる。
次に、上記半導体装置の作製方法の一例について説明する。以下では、はじめに下部のトランジスタ160の作製方法について図2および図3を参照して説明し、その後、上部のトランジスタ162および容量素子164の作製方法について図4および図5を参照して説明する。
下部のトランジスタ160の作製方法について、図2および図3を参照して説明する。
次に、上部のトランジスタ162の作製方法について、図4および図5を参照して説明する。
次に、上記半導体装置の作製に用いられるSOI基板の作製方法の一例について、図7を参照して説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の回路構成およびその動作について、図8を参照して説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
本実施の形態では、先の実施の形態において説明した半導体装置の応用例の一について説明する。具体的には、先の実施の形態において説明した半導体装置をマトリクス状に配列した半導体装置の一例について説明する。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図13を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラなどのカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
102 絶縁層
110 単結晶半導体基板
112 絶縁層
114 脆化領域
116 単結晶半導体層
118 単結晶半導体層
120 半導体層
122 絶縁層
122a ゲート絶縁層
124 マスク
126 不純物領域
128a ゲート電極
128b 導電層
130 不純物領域
132 不純物領域
134 チャネル形成領域
136 絶縁層
138 絶縁層
140 絶縁層
142a ソース電極またはドレイン電極
142b ソース電極またはドレイン電極
144 酸化物半導体層
146 ゲート絶縁層
148a ゲート電極
148b 導電層
150 絶縁層
154 配線
156 絶縁層
160 トランジスタ
162 トランジスタ
164 容量素子
166 トランジスタ
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
720 電子書籍
721 筐体
723 筐体
725 表示部
727 表示部
731 電源スイッチ
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
745 操作キー
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
1100 メモリセル
1111 第1の駆動回路
1112 第2の駆動回路
1113 第3の駆動回路
1114 第4の駆動回路
Claims (3)
- 第1のトランジスタと、第2のトランジスタと、容量と、を含む複数のメモリセルを有し、
前記第2のトランジスタは前記第1のトランジスタの上に位置し、
前記第1のトランジスタは、
第1の半導体層と、
前記第1の半導体層上の第1のゲート絶縁膜と、
前記第1のゲート絶縁膜上の第1のゲート電極とを有し、
前記第2のトランジスタは、
酸化物半導体を有する第2の半導体層と、
前記第2の半導体層上の第2のゲート絶縁膜と、
前記第2のゲート絶縁膜上の第2のゲート電極と、
前記第2の半導体層と電気的に接続するソース電極及びドレイン電極とを有し、
前記第1の半導体層は、前記酸化物半導体とは異なる材料を有し、
前記第1の半導体層と、前記ソース電極又は前記ドレイン電極の一方とは、第1の導電層を介して電気的に接続され、
前記第1の導電層と前記第1のゲート電極とは、同一の導電層をエッチングする工程を経て形成され、
前記第1のゲート電極の上面は、前記ソース電極又は前記ドレイン電極の他方の下面に接し、
前記容量の一方の電極は、前記第1のゲート電極と電気的に接続され、
前記容量の一方の電極は、前記ソース電極及び前記ドレイン電極の他方と電気的に接続されることを特徴とする半導体装置。 - 第1のトランジスタと、第2のトランジスタと、容量と、を含む複数のメモリセルを有し、
前記第2のトランジスタは前記第1のトランジスタの上に位置し、
前記第1のトランジスタは、
第1の半導体層と、
前記第1の半導体層上の第1のゲート絶縁膜と、
前記第1のゲート絶縁膜上の第1のゲート電極とを有し、
前記第2のトランジスタは、
酸化物半導体を有する第2の半導体層と、
前記第2の半導体層上の第2のゲート絶縁膜と、
前記第2のゲート絶縁膜上の第2のゲート電極と、
前記第2の半導体層と電気的に接続するソース電極及びドレイン電極とを有し、
前記第1の半導体層は、前記酸化物半導体とは異なる材料を有し、
前記ソース電極又は前記ドレイン電極の一方と電気的に接続する配線とを有し、
前記ソース電極又は前記ドレイン電極の一方と、前記第1の半導体層とは、第1の導電層を介して電気的に接続され、
前記ソース電極又は前記ドレイン電極の一方と前記配線が接する第1の部分と、前記ソース電極又は前記ドレイン電極の一方と前記第1の導電層とが接する第2の部分とは、互いに重なり、
前記第1の導電層と前記第1のゲート電極とは、同一の導電層をエッチングする工程を経て形成され、
前記第1のゲート電極の上面は、前記ソース電極又は前記ドレイン電極の他方の下面に接し、
前記容量の一方の電極は、前記第1のゲート電極と電気的に接続され、
前記容量の一方の電極は、前記ソース電極及び前記ドレイン電極の他方と電気的に接続されることを特徴とする半導体装置。 - 前記容量は、前記ソース電極又は前記ドレイン電極の他方と、前記第2のゲート絶縁膜と、第2の導電層とを有する請求項1又は2に記載の半導体装置。
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