JP5730747B2 - 渦電流センサ並びに研磨方法および装置 - Google Patents

渦電流センサ並びに研磨方法および装置 Download PDF

Info

Publication number: JP5730747B2
Authority: JP; Japan
Prior art keywords: coil; sensor; polishing; eddy current; substrate
Prior art date: 2010-12-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2011257130A

Other languages

English (en)

Japanese (ja)

Other versions

JP2012135865A (ja

Inventor

光男多田

高橋　太郎

太郎高橋

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Ebara Corp

Original Assignee

Ebara Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-12-10

Filing date

2011-11-25

Publication date

2015-06-10

2011-11-25 Application filed by Ebara Corp filed Critical Ebara Corp

2011-11-25 Priority to JP2011257130A priority Critical patent/JP5730747B2/ja

2011-12-05 Priority to TW100144582A priority patent/TWI592254B/zh

2011-12-07 Priority to KR1020110130426A priority patent/KR101661279B1/ko

2011-12-07 Priority to US13/313,407 priority patent/US8657644B2/en

2012-07-19 Publication of JP2012135865A publication Critical patent/JP2012135865A/ja

2015-06-10 Application granted granted Critical

2015-06-10 Publication of JP5730747B2 publication Critical patent/JP5730747B2/ja

Status Active legal-status Critical Current

2031-11-25 Anticipated expiration legal-status Critical

Links

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238000001514 detection method Methods 0.000 claims description 188
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Images

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
- G01N27/82—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws
- G01N27/90—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws using eddy currents
- G01N27/9006—Details, e.g. in the structure or functioning of sensors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

Engineering & Computer Science (AREA)
General Physics & Mathematics (AREA)
Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Life Sciences & Earth Sciences (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Mechanical Engineering (AREA)
Electrochemistry (AREA)
Health & Medical Sciences (AREA)
Manufacturing & Machinery (AREA)
Analytical Chemistry (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
Immunology (AREA)
Pathology (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

JP2011257130A 2009-07-16 2011-11-25 渦電流センサ並びに研磨方法および装置 Active JP5730747B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2011257130A JP5730747B2 (ja)	2010-12-10	2011-11-25	渦電流センサ並びに研磨方法および装置
TW100144582A TWI592254B (zh)	2010-12-10	2011-12-05	渦電流檢測器及研磨方法，以及其裝置
KR1020110130426A KR101661279B1 (ko)	2010-12-10	2011-12-07	와전류 센서 및 연마 방법 및 장치
US13/313,407 US8657644B2 (en)	2009-07-16	2011-12-07	Eddy current sensor and polishing method and apparatus

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2010275310		2010-12-10
JP2010275310		2010-12-10
JP2011257130A JP5730747B2 (ja)	2010-12-10	2011-11-25	渦電流センサ並びに研磨方法および装置

Publications (2)

Publication Number	Publication Date
JP2012135865A JP2012135865A (ja)	2012-07-19
JP5730747B2 true JP5730747B2 (ja)	2015-06-10

Family

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Application Number	Title	Priority Date	Filing Date
JP2011257130A Active JP5730747B2 (ja)	2009-07-16	2011-11-25	渦電流センサ並びに研磨方法および装置

Country Status (3)

Country	Link
JP (1)	JP5730747B2 (ko)
KR (1)	KR101661279B1 (ko)
TW (1)	TWI592254B (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP5894833B2 (ja) *	2012-03-30	2016-03-30	株式会社荏原製作所	渦電流センサ並びに研磨方法および装置
JP6027430B2 (ja) *	2012-12-20	2016-11-16	日野自動車株式会社	往復動摩耗試験中の油膜厚測定方法
KR102326730B1 (ko) *	2014-03-12	2021-11-17	가부시키가이샤 에바라 세이사꾸쇼	막 두께 측정값의 보정 방법, 막 두께 보정기 및 와전류 센서
JP6451262B2 (ja) *	2014-11-28	2019-01-16	日立金属株式会社	磁石特性測定方法及び磁石特性測定装置
JP6590612B2 (ja) *	2015-09-16	2019-10-16	株式会社荏原製作所	渦電流センサ
TW201710029A (zh)	2015-09-01	2017-03-16	Ebara Corp	渦電流檢測器
US10160089B2 (en)	2015-10-01	2018-12-25	Ebara Corporation	Polishing apparatus
JP2017064899A (ja)	2015-10-01	2017-04-06	株式会社荏原製作所	研磨装置
JP6779633B2 (ja)	2016-02-23	2020-11-04	株式会社荏原製作所	研磨装置
US10788456B2 (en)	2017-07-21	2020-09-29	Industry-Academic Cooperation Foundation, Chosun University	Eddy current inspection device for nondestructive testing
JP7141204B2 (ja)	2017-10-19	2022-09-22	株式会社荏原製作所	研磨装置、及び研磨方法
JP7083279B2 (ja) *	2018-06-22	2022-06-10	株式会社荏原製作所	渦電流センサの軌道を特定する方法、基板の研磨の進行度を算出する方法、基板研磨装置の動作を停止する方法および基板研磨の進行度を均一化する方法、これらの方法を実行するためのプログラムならびに当該プログラムが記録された非一過性の記録媒体
JP2020053550A (ja)	2018-09-27	2020-04-02	株式会社荏原製作所	研磨装置、研磨方法、及び機械学習装置
JP7291558B2 (ja) *	2019-07-03	2023-06-15	株式会社荏原製作所	渦電流センサ
CN114367919A (zh) *	2020-10-14	2022-04-19	长鑫存储技术有限公司	研磨控制方法、装置及存储介质
US20220281060A1 (en) *	2021-03-03	2022-09-08	Applied Materials, Inc.	Pressure signals with different frequencies during friction monitoring to provide spatial resolution
CN114184670B (zh) *	2021-12-14	2023-11-14	蚌埠中光电科技有限公司	一种tft-lcd、ltps玻璃铂金通道涡流检测装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5748404U (ko) *	1980-09-04	1982-03-18
JP4451111B2 (ja) *	2003-10-20	2010-04-14	株式会社荏原製作所	渦電流センサ
JP4390614B2 (ja) *	2004-01-16	2009-12-24	株式会社アルバック	膜厚測定装置
JP4817687B2 (ja)	2005-03-18	2011-11-16	株式会社荏原製作所	研磨装置
DE102006025356A1 (de) *	2006-05-31	2007-12-06	Siemens Ag	Verfahren zum Bestimmen der Schichtdicke einer elektrisch leitfähigen Beschichtung auf einem elektrisch leitfähigen Substrat
TWI572441B (zh) *	2008-08-05	2017-03-01	荏原製作所股份有限公司	硏磨方法及裝置

2011
- 2011-11-25 JP JP2011257130A patent/JP5730747B2/ja active Active
- 2011-12-05 TW TW100144582A patent/TWI592254B/zh active
- 2011-12-07 KR KR1020110130426A patent/KR101661279B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
JP2012135865A (ja)	2012-07-19
TW201236812A (en)	2012-09-16
KR101661279B1 (ko)	2016-09-29
TWI592254B (zh)	2017-07-21
KR20120065243A (ko)	2012-06-20

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Publication	Publication Date	Title
JP5730747B2 (ja)	2015-06-10	渦電流センサ並びに研磨方法および装置
JP5894833B2 (ja)	2016-03-30	渦電流センサ並びに研磨方法および装置
US20110124269A1 (en)	2011-05-26	Eddy current sensor and polishing method and apparatus
US8657644B2 (en)	2014-02-25	Eddy current sensor and polishing method and apparatus
JP5513795B2 (ja)	2014-06-04	研磨方法および装置
KR101207777B1 (ko)	2012-12-04	인-시튜 프로파일 측정을 위한 와전류 시스템
JP6779633B2 (ja)	2020-11-04	研磨装置
US11638982B2 (en)	2023-05-02	Core configuration for in-situ electromagnetic induction monitoring system
JP6590612B2 (ja)	2019-10-16	渦電流センサ
TW202227776A (zh)	2022-07-16	渦電流檢測器
TW202426186A (zh)	2024-07-01	渦電流檢測器、研磨裝置、及膜厚檢測方法