JP5723670B2 - 光学システム、検査システムおよび製造方法 - Google Patents
光学システム、検査システムおよび製造方法 Download PDFInfo
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
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- G—PHYSICS
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- G02B13/04—Reversed telephoto objectives
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- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/18—Optical objectives specially designed for the purposes specified below with lenses having one or more non-spherical faces, e.g. for reducing geometrical aberration
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Description
Claims (11)
- 広角入力レンズ群であって、前記広角入力レンズ群内またはその後に中間合焦像が形成されないように物体面から放射を受けかつそこから像を形成可能な放射を生成するように構成された広角入力レンズ群と、
前記広角入力レンズ群から前記像を形成可能な放射を受けかつ前記像を形成可能な放射を像面上に合焦させて前記物体面の少なくとも一部の像を形成するように構成された出力レンズ群と
を含む、光学システムであって、
前記広角入力レンズ群は、少なくとも約60度の角度広がりを有する放射を受けるように構成され、
前記広角入力レンズ群および前記出力レンズ群は、前記光学システムの拡大率を変更するために前記光学システム内で交換可能に配置される、光学システム。 - 前記物体は、リソグラフィシステム内のレチクル、レチクルに関連するペリクル、基板、ホルダ、チャックまたはテーブルからなる群から選択される、請求項1に記載の光学システム。
- 前記広角入力レンズ群は、非球面を有する前方光学要素および広角入力レンズ群ダブレットを含む、請求項1に記載の光学システム。
- 前記出力レンズ群は、非球面を有するダブレットおよび最終レンズ要素を含む、請求項1に記載の光学システム。
- 前記光学システムはテレセントリックにならないように構成されている、請求項1に記載の光学システム。
- 物体の表面を検査する検査システムであって、前記検査システムは、
光学システムと、
ディテクタとを含み、前記光学システムは、
広角入力レンズ群であって、前記広角入力レンズ群内またはその後に中間合焦像が形成されないように物体面から放射を受けかつそこから像を形成可能な放射を生成するように構成された広角入力レンズ群と、
前記広角入力レンズ群から前記像を形成可能な放射を受けかつ前記像を形成可能な放射を像面上に合焦させて前記物体面の少なくとも一部の像を形成するように構成された出力レンズ群とを含み、
前記ディテクタは、前記物体面の少なくとも一部の前記像を受け、前記受けた像に基づいて汚染、前記物体面の異常および/または前記物体面上のパターンを検出するように構成されており、
前記広角入力レンズ群は、少なくとも約60度の角度広がりを有する放射を受けるように構成され、
前記広角入力レンズ群および前記出力レンズ群は、前記光学システムの拡大率を変更するために前記光学システム内で交換可能に配置される、検査システム。 - 前記物体は、リソグラフィシステム内のレチクル、レチクルに関連するペリクル、基板、ホルダ、チャックまたはテーブルからなる群から選択される、請求項6に記載の検査システム。
- 前記パターンはレチクル上のバーコードを含む、請求項6に記載の検査システム。
- ビームの断面にパターンを付与するパターニングデバイスを保持するサポート構造と、
基板を保持する基板テーブルと、
パターン付きビームを前記基板のターゲット部分上に投影する投影システムと、
物体面を検査する検査システムと
を含むリソグラフィ装置であって、前記検査システムは、
光学システムと、
ディテクタとを含み、前記光学システムは、
広角入力レンズ群であって、前記広角入力レンズ群内またはその後に中間合焦像が形成されないように前記物体面から放射を受けかつそこから像を形成可能な放射を生成するように構成された広角入力レンズ群と、
前記広角入力レンズ群から前記像を形成可能な放射を受けかつ前記像を形成可能な放射を像面上に合焦させて前記物体面の少なくとも一部の像を形成するように構成された出力レンズ群とを含み、
前記ディテクタは、前記物体面の少なくとも一部の前記像を受け、前記受けた像に基づいて汚染、前記物体面の異常および/または前記物体面上のパターンを検出するように構成されており、
前記広角レンズ群の画角は少なくとも約60度であり、
前記広角入力レンズ群および前記出力レンズ群は、前記光学システムの拡大率を変更するために前記光学システム内で交換可能に配置される、リソグラフィ装置。 - 前記物体は、リソグラフィシステム内のパターニングデバイス、パターニングデバイスに関連するペリクル、基板、ホルダ、チャックまたはテーブルからなる群から選択される、請求項9に記載のリソグラフィ装置。
- パターン付き放射ビームを基板のターゲット部分上に投影することと、
光学システムを用いて物体面を検査することと
を含む製造方法であって、
前記光学システムは、広角入力レンズ群と出力レンズ群とを含み、
前記検査することは、
前記広角入力レンズ群内またはその後に中間合焦像が形成されないように前記広角入力レンズ群で前記物体面から放射を受けてそこから像を形成可能な放射を生成することと、
前記出力レンズ群によって、前記広角入力レンズ群からの前記像を形成可能な放射を像面上に合焦させて前記物体面の少なくとも一部の像を形成することと、
前記物体面の少なくとも一部の前記像に基づいて汚染、前記物体面の異常および/または前記物体面上のパターンを検出することとを含み、
前記広角入力レンズ群は、少なくとも約60度の角度広がりを有する放射を受けるように構成され、
前記広角入力レンズ群および前記出力レンズ群は、前記光学システムの拡大率を変更するために前記光学システム内で交換可能に配置される、製造方法。
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US33428610P | 2010-05-13 | 2010-05-13 | |
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US (2) | US8692977B2 (ja) |
JP (1) | JP5723670B2 (ja) |
KR (1) | KR101793536B1 (ja) |
CN (1) | CN102243445B (ja) |
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2011
- 2011-04-06 NL NL2006556A patent/NL2006556A/en not_active Application Discontinuation
- 2011-04-22 TW TW100114132A patent/TWI588467B/zh active
- 2011-04-26 CN CN201110112084.4A patent/CN102243445B/zh active Active
- 2011-05-06 JP JP2011103542A patent/JP5723670B2/ja active Active
- 2011-05-11 US US13/105,364 patent/US8692977B2/en active Active
- 2011-05-12 KR KR1020110044443A patent/KR101793536B1/ko active IP Right Grant
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US20110279805A1 (en) | 2011-11-17 |
JP2011242768A (ja) | 2011-12-01 |
CN102243445B (zh) | 2015-07-15 |
CN102243445A (zh) | 2011-11-16 |
TW201200863A (en) | 2012-01-01 |
US8692977B2 (en) | 2014-04-08 |
TWI588467B (zh) | 2017-06-21 |
US9411244B2 (en) | 2016-08-09 |
US20140098356A1 (en) | 2014-04-10 |
KR101793536B1 (ko) | 2017-11-03 |
KR20110125599A (ko) | 2011-11-21 |
NL2006556A (en) | 2011-11-15 |
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