JP5690228B2 - 裏面照射型固体撮像素子及びそれを備えた撮像装置 - Google Patents
裏面照射型固体撮像素子及びそれを備えた撮像装置 Download PDFInfo
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- JP5690228B2 JP5690228B2 JP2011138353A JP2011138353A JP5690228B2 JP 5690228 B2 JP5690228 B2 JP 5690228B2 JP 2011138353 A JP2011138353 A JP 2011138353A JP 2011138353 A JP2011138353 A JP 2011138353A JP 5690228 B2 JP5690228 B2 JP 5690228B2
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- 238000003384 imaging method Methods 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 claims description 34
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- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 12
- 238000005286 illumination Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 238000000137 annealing Methods 0.000 description 2
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- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 230000035945 sensitivity Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
nガードリング端子電圧>pウエル端子電圧≧pガードリング端子電圧≧裏面端子電圧
11 CCD転送路
12 転送ゲート電極
20 画素領域
30 pウエル
31 pウエル端子
32 pウエル端子の配線
40 nガードリング
41 nガードリング端子
42 nガードリング端子の配線
50 pガードリング
51 pガードリング端子
52 pガードリング端子の配線
60 酸化膜
70 p+半導体層
71 裏面端子
72 p−半導体層
73 n−半導体層
80 光電変換部
100 裏面照射型固体撮像素子
101 表面(1つの面)
102 裏面(他の面)
103〜106 端面
200 撮像装置
201 アナログ信号処理部(信号処理回路)
202 AD変換部
203 デジタル信号処理部(信号処理回路)
204 映像信号メモリ
205 表示部
210 撮像部
211 レンズ
220 駆動回路
221 電圧印加部
222 駆動クロック出力部
Claims (2)
- 半導体基板の1つの面側に二次元アレイ状に配列形成された複数の画素部を有し、前記半導体基板の他の面側からp+半導体層、p−半導体層及びn−半導体層が順次形成されたエピタキシャル構造の裏面照射型固体撮像素子であって、
前記複数の画素部が形成された画素領域から前記半導体基板の端面に向かって前記画素領域を順次囲むpウエル、nガードリング及びpガードリングが形成され、
前記pウエル、前記nガードリング及び前記pガードリングのそれぞれに電圧を印加するpウエル端子、nガードリング端子及びpガードリング端子と、
前記p + 半導体層に電圧を印加する裏面端子とを有し、
各端子に印加される電圧が、nガードリング端子電圧>pウエル端子電圧≧pガードリング端子電圧≧裏面端子電圧の関係であることを特徴とする裏面照射型固体撮像素子。 - 請求項1に記載の裏面照射型固体撮像素子と、
前記裏面照射型固体撮像素子を駆動する駆動回路と、
前記裏面照射型固体撮像素子の複数の画素部からの信号を処理して映像信号を出力する信号処理回路とを備えたことを特徴とする撮像装置。
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JP2011138353A JP5690228B2 (ja) | 2011-06-22 | 2011-06-22 | 裏面照射型固体撮像素子及びそれを備えた撮像装置 |
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JP2011138353A JP5690228B2 (ja) | 2011-06-22 | 2011-06-22 | 裏面照射型固体撮像素子及びそれを備えた撮像装置 |
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JP2013008711A JP2013008711A (ja) | 2013-01-10 |
JP5690228B2 true JP5690228B2 (ja) | 2015-03-25 |
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Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008177485A (ja) * | 2007-01-22 | 2008-07-31 | Univ Kinki | 裏面照射型撮像素子の製造方法及び裏面照射型撮像素子 |
JP4742057B2 (ja) * | 2007-02-21 | 2011-08-10 | 富士フイルム株式会社 | 裏面照射型固体撮像素子 |
JP2010239005A (ja) * | 2009-03-31 | 2010-10-21 | Kinki Univ | 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置 |
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