JP5671793B2 - 仕上研磨を施したシリコンウェーハの洗浄方法 - Google Patents
仕上研磨を施したシリコンウェーハの洗浄方法 Download PDFInfo
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- JP5671793B2 JP5671793B2 JP2009234026A JP2009234026A JP5671793B2 JP 5671793 B2 JP5671793 B2 JP 5671793B2 JP 2009234026 A JP2009234026 A JP 2009234026A JP 2009234026 A JP2009234026 A JP 2009234026A JP 5671793 B2 JP5671793 B2 JP 5671793B2
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- JP
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- Prior art keywords
- cleaning
- wafer
- solution
- concentration
- ammonium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims description 122
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 46
- 229910052710 silicon Inorganic materials 0.000 title claims description 46
- 239000010703 silicon Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 30
- 238000005498 polishing Methods 0.000 title claims description 7
- 235000012431 wafers Nutrition 0.000 title description 99
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 48
- 150000003863 ammonium salts Chemical class 0.000 claims description 37
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 235000019270 ammonium chloride Nutrition 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 4
- 239000001099 ammonium carbonate Substances 0.000 claims description 4
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 4
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 3
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 84
- 238000006243 chemical reaction Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 23
- 230000006866 deterioration Effects 0.000 description 21
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 18
- 235000011114 ammonium hydroxide Nutrition 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 239000002245 particle Substances 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 239000000908 ammonium hydroxide Substances 0.000 description 16
- 239000007864 aqueous solution Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005406 washing Methods 0.000 description 7
- 238000010979 pH adjustment Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PRKQVKDSMLBJBJ-UHFFFAOYSA-N ammonium carbonate Chemical compound N.N.OC(O)=O PRKQVKDSMLBJBJ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Description
Claims (2)
- 塩化アンモニウム(NH 4 Cl)、炭酸アンモニウム((NH 4 ) 2 CO 3 )、臭化アンモニウム(NH 4 Br)、硫酸アンモニウム((NH 4 ) 2 SO 4 )および硝酸アンモニウム(NH 4 NO 3 )群から選択される1種または2種以上を組み合わせ化合物として純水に溶解させた無機アンモニウム塩、過酸化水素および水からなる洗浄溶液を使用することを特徴とする仕上研磨を施したシリコンウェーハの洗浄方法。
- pHが6〜12であることを特徴とする請求項1に記載の仕上研磨を施したシリコンウェーハの洗浄方法。
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JP2009234026A JP5671793B2 (ja) | 2009-10-08 | 2009-10-08 | 仕上研磨を施したシリコンウェーハの洗浄方法 |
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JP2009234026A JP5671793B2 (ja) | 2009-10-08 | 2009-10-08 | 仕上研磨を施したシリコンウェーハの洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011082372A JP2011082372A (ja) | 2011-04-21 |
JP5671793B2 true JP5671793B2 (ja) | 2015-02-18 |
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JP2009234026A Active JP5671793B2 (ja) | 2009-10-08 | 2009-10-08 | 仕上研磨を施したシリコンウェーハの洗浄方法 |
Country Status (1)
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JP (1) | JP5671793B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4307347A1 (en) | 2021-03-09 | 2024-01-17 | Shin-Etsu Handotai Co., Ltd. | Method for cleaning silicon wafer, method for producing silicon wafer, and silicon wafer |
JP7279753B2 (ja) | 2021-09-01 | 2023-05-23 | 信越半導体株式会社 | シリコンウェーハの洗浄方法および製造方法 |
JP2023038054A (ja) | 2021-09-06 | 2023-03-16 | 信越半導体株式会社 | シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19525521B4 (de) * | 1994-07-15 | 2007-04-26 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Verfahren zum Reinigen von Substraten |
JPH11260786A (ja) * | 1998-03-12 | 1999-09-24 | Memc Kk | 半導体ウエハの洗浄方法 |
JP2000091289A (ja) * | 1998-09-10 | 2000-03-31 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP4045408B2 (ja) * | 2002-01-31 | 2008-02-13 | 三菱瓦斯化学株式会社 | 銅配線基板向け洗浄液およびこれを使用したレジスト剥離方法 |
JP4270544B2 (ja) * | 2003-03-06 | 2009-06-03 | 花王株式会社 | 剥離剤組成物 |
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- 2009-10-08 JP JP2009234026A patent/JP5671793B2/ja active Active
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