JP5670458B2 - マスク・レベルを削減した金属酸化物fetの製造法 - Google Patents
マスク・レベルを削減した金属酸化物fetの製造法 Download PDFInfo
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- JP5670458B2 JP5670458B2 JP2012533188A JP2012533188A JP5670458B2 JP 5670458 B2 JP5670458 B2 JP 5670458B2 JP 2012533188 A JP2012533188 A JP 2012533188A JP 2012533188 A JP2012533188 A JP 2012533188A JP 5670458 B2 JP5670458 B2 JP 5670458B2
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- 229910044991 metal oxide Inorganic materials 0.000 title claims description 35
- 150000004706 metal oxides Chemical class 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010410 layer Substances 0.000 claims description 124
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 38
- 239000011159 matrix material Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 238000000059 patterning Methods 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 2
- 230000008569 process Effects 0.000 description 18
- 239000004020 conductor Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- -1 ITO Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229920001345 ε-poly-D-lysine Polymers 0.000 description 1
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
Description
AMOLED要素の他のバリエーションも利用することができるが、全てのバリエーションにおいて、一般に、個別の走査線およびデータ線、および相互接続トランジスタ、および透明導体が必要とされる。
オプションで、スペーサまたはバンク層35は、パターニング・マスクまたはエッチング・マスクとして使用され、37で示された領域内の不透明なS/D金属26およびオプションのバリア金属24がエッチング除去されて光透過(すなわちディスプレイ)領域になる。このオプションの段階は、例えば、透明ディスプレイまたは底部発光/反射ディスプレイにおいて用いられる。オプションの透明導体層38から成る透明電極が、半導体金属酸化物層16上の領域37に堆積される。オプションの透明導体層38が無くても、半導体金属酸化物層16が透明電極としての役割を果たすことは理解されるであろう。透明導体層38の1つの利点は、半導体金属酸化物層と比較して、その材料(例えばTCOまたは同種のもの)が一般に比較的硬く、したがって、列および行の駆動回路または同種のものを接続するための良好な接触パッドを形成する点である。
Claims (14)
- アクティブ・マトリクス・ディスプレイ用の薄膜トランジスタおよび透明な光透過領域を、マスキング作業を削減して製作する方法において、前記方法は、
表面を有する透明な基板を提供する段階と、
前記基板の前記表面上にゲート金属をパターン形成し、薄膜トランジスタのゲートを画定する段階と、
前記ゲートおよびその周囲の基板表面の上に透明なゲート誘電体の層を形成する段階と、
前記ゲート誘電体の層上に透明な半導体金属酸化物の層を堆積させる段階と、
前記ゲートの上方に重なる前記半導体金属酸化物上にチャネル保護層をパターン形成する段階であって、前記チャネル保護層はパターン形成されて前記ゲート上の前記半導体金属酸化物内にチャネル領域を画定し、かつ、前記半導体金属酸化物の残部を露出させる、段階と、
前記チャネル保護層および前記露出された半導体金属酸化物の上に、少なくとも1つのソース/ドレイン金属層を堆積させる段階と、
単一のエッチング段階で、前記ソース/ドレイン金属層を通って、前記ゲート上の前記チャネル保護層までエッチングして、前記ソース/ドレイン金属層を前記薄膜トランジスタのソース端子とドレイン端子とに分離し、かつ、前記薄膜トランジスタの周辺部で前記ソース/ドレイン金属層および前記半導体金属酸化物を通ってエッチングして、前記薄膜トランジスタを隔離する段階と、
前記隔離された薄膜トランジスタおよびその周囲の前記ソース/ドレイン金属層の一部上に、パターン形成された非導電性のスペーサ層をパターン形成する段階であって、前記スペーサ層は、前記チャネル領域に隣接しかつ上方に重なる関係で光透過装置を収容するために設計された光透過領域を画定する、段階と、
前記パターン化された非導電性のスペーサ層を前記光透過領域中の前記ソース/ドレイン金属層を通してエッチングするマスクとして用いて、上方に重なる前記光透過装置の1つの端子に接触または1つの端子を形成する透明なピクセル端子として前記半導体金属酸化物を露出させる段階と、
から構成されることを特徴とする方法。 - 前記薄膜トランジスタの前記製作は、アクティブ・マトリクス・ディスプレイ内に複数の薄膜トランジスタを製作する段階を含み、前記アクティブ・マトリクス・ディスプレイは、データ線および走査線のマトリクスを含み、前記ゲート金属は前記走査線の1つに接続され、また、前記ソース/ドレイン金属は前記データ線の1つに接続されることを特徴とする請求項1記載の方法。
- 前記光透過装置は、液晶装置(LCD)および有機発光装置(OLED)のうちの1つを含むことを特徴とする請求項1記載の方法。
- 前記スペーサ層は、前記基板およびその上に形成された関連するコンポーネントを、前記アクティブ・マトリクス・ディスプレイ内の隣接する基板構造から分離するために配置されることを特徴とする請求項1記載の方法。
- 前記少なくとも1つのソース/ドレイン金属層を堆積させる段階は、前記ソース/ドレイン金属層を堆積させる前に、前記チャネル保護層および前記露出された半導体金属酸化物上に透明な酸化物の層を堆積させる段階を含むことを特徴とする請求項1記載の方法。
- 前記少なくとも1つのソース/ドレイン金属層を堆積させる段階は、前記透明な酸化物の層上にバリア金属層を堆積させる段階を含むことを特徴とする請求項5記載の方法。
- 前記バリア金属層を堆積させる段階は、Mo、W、Cr、およびNiのうちの1つを堆積させる段階を含むことを特徴とする請求項6記載の方法。
- アクティブ・マトリクス・ディスプレイ内に薄膜トランジスタのマトリクスを製作する方法において、前記アクティブ・マトリクス・ディスプレイは、データ線および走査線のマトリクスを含み、前記方法は、
表面を有する透明な基板を提供する段階と、
前記基板の前記表面上にゲート金属をパターン形成して前記マトリクスの各薄膜トランジスタのゲートを画定し、さらに、前記マトリクスの各薄膜トランジスタの前記ゲートを選択された走査線に接続する段階と、
前記各ゲートおよびそれらの周囲の基板表面の上に透明なゲート誘電体の層を形成する段階と、
前記ゲート誘電体の層上に透明な半導体金属酸化物の層を堆積させる段階と、
前記各ゲートの上方に重なる前記半導体金属酸化物上にチャネル保護層をパターン形成する段階であって、前記チャネル保護層はパターン形成されて前記各ゲート上の前記半導体金属酸化物内にチャネル領域を画定し、かつ、前記半導体金属酸化物の残部を露出させる、段階と、
前記チャネル保護層および前記露出された半導体金属酸化物の上に、少なくとも1つのソース/ドレイン金属層を堆積させる段階と、
単一のエッチング段階で、前記ソース/ドレイン金属層を通って、前記各ゲート上の前記チャネル保護層までエッチングして、前記ソース/ドレイン金属層を前記薄膜トランジスタのソース端子とドレイン端子とに分離し、かつ、前記薄膜トランジスタの周辺部で前記ソース/ドレイン金属層および前記半導体金属酸化物を通ってエッチングして、前記マトリクスの前記各薄膜トランジスタを隔離し、さらに、前記ソース/ドレイン端子のそれぞれを前記データ線の1つに接続する、段階と、
前記隔離された薄膜トランジスタおよびその周囲の前記ソース/ドレイン金属層の一部上に、パターン形成された非導電性のスペーサ層をパターン形成する段階であって、前記スペーサ層は、前記チャネル領域に隣接しかつ上方に重なる関係で光透過装置を収容するために設計された光透過領域を画定する、段階と、
前記パターン化された非導電性のスペーサ層を前記光透過領域中の前記ソース/ドレイン金属層を通してエッチングするマスクとして用いて、透明なピクセル端子として前記半導体金属酸化物を露出させる段階と、
から構成されることを特徴とする方法。 - 前記光透過領域内の前記透明電極は、前記アクティブ・マトリクス・ディスプレイ内の光透過装置の電極であることを特徴とする請求項8記載の方法。
- 前記光透過装置は、液晶装置(LCD)および有機発光装置(OLED)のうちの1つを含むことを特徴とする請求項9記載の方法。
- 前記スペーサ層は、前記基板およびその上に形成された関連するコンポーネントを、前記アクティブ・マトリクス・ディスプレイ内の隣接する基板構造から分離するために配置されることを特徴とする請求項9記載の方法。
- 前記少なくとも1つのソース/ドレイン金属層を堆積させる段階は、前記ソース/ドレイン金属層を堆積させる前に、前記チャネル保護層および前記露出された半導体金属酸化物上に透明な酸化物の層を堆積させる段階を含むことを特徴とする請求項8記載の方法。
- 前記少なくとも1つのソース/ドレイン金属層を堆積させる段階は、前記透明な酸化物の層上にバリア金属層を堆積させる段階を含むことを特徴とする請求項8記載の方法。
- 前記バリア金属層を堆積させる段階は、Mo、W、Cr、およびNiのうちの1つを堆積させる段階を含むことを特徴とする請求項12記載の方法。
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US12/612,123 US8187929B2 (en) | 2009-11-04 | 2009-11-04 | Mask level reduction for MOSFET |
PCT/US2010/048264 WO2011056294A1 (en) | 2009-11-04 | 2010-09-09 | Mask level reduction for mofet |
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US9401431B2 (en) * | 2009-04-21 | 2016-07-26 | Cbrite Inc. | Double self-aligned metal oxide TFT |
US9318614B2 (en) * | 2012-08-02 | 2016-04-19 | Cbrite Inc. | Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption |
CN102651340B (zh) | 2011-12-31 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种tft阵列基板的制造方法 |
CN104335113A (zh) * | 2012-05-26 | 2015-02-04 | 希百特股份有限公司 | 用于mofet的掩膜层级减少 |
US9070779B2 (en) * | 2012-12-18 | 2015-06-30 | Cbrite Inc. | Metal oxide TFT with improved temperature stability |
CN104241394A (zh) * | 2014-08-29 | 2014-12-24 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及相应的制备方法、显示基板和显示装置 |
CN104362169B (zh) * | 2014-11-26 | 2017-10-10 | 京东方科技集团股份有限公司 | 一种有机发光二极管阵列基板及其制备方法、显示装置 |
US9647044B2 (en) | 2014-11-26 | 2017-05-09 | Boe Technology Group Co., Ltd. | Organic light-emitting diode array substrate and manufacturing method thereof, and display device |
CN105116642B (zh) | 2015-09-24 | 2018-07-17 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN114068407A (zh) * | 2021-11-05 | 2022-02-18 | 信利(惠州)智能显示有限公司 | 控制tft基板上的过孔孔径大小的方法 |
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WO2001018774A1 (en) * | 1999-09-08 | 2001-03-15 | Matsushita Electric Industrial Co., Ltd. | Electric circuit board, tft array substrate using the same, and liquid crystal display |
TW508830B (en) * | 2001-08-28 | 2002-11-01 | Hannstar Display Corp | Thin film transistor structure having four procedures of mask processing and the manufacturing method |
JP4628693B2 (ja) * | 2004-03-31 | 2011-02-09 | 富士通株式会社 | 液晶表示装置用基板及びその製造方法並びにそれを備えた液晶表示装置 |
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JP2007157916A (ja) * | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
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JP2009099887A (ja) * | 2007-10-19 | 2009-05-07 | Hitachi Displays Ltd | 表示装置 |
US7605026B1 (en) * | 2007-12-03 | 2009-10-20 | Cbrite, Inc. | Self-aligned transparent metal oxide TFT on flexible substrate |
JP5292066B2 (ja) * | 2007-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
US8394897B2 (en) * | 2008-03-25 | 2013-03-12 | Chevron Oronite Company Llc | Production of vinylidene-terminated polyolefins via quenching with monosulfides |
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