JP5669736B2 - 放射システムおよびリソグラフィ装置 - Google Patents
放射システムおよびリソグラフィ装置 Download PDFInfo
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- JP5669736B2 JP5669736B2 JP2011525418A JP2011525418A JP5669736B2 JP 5669736 B2 JP5669736 B2 JP 5669736B2 JP 2011525418 A JP2011525418 A JP 2011525418A JP 2011525418 A JP2011525418 A JP 2011525418A JP 5669736 B2 JP5669736 B2 JP 5669736B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- X-Ray Techniques (AREA)
Description
ここで、λは、使用される放射の波長であり、NAPSは、パターンを印刷するために使用される投影システムの開口数である。k1は、レイリー定数とも呼ばれるプロセス依存調整係数であり、CDは、印刷されたフィーチャのフィーチャサイズ(またはクリティカルディメンジョン)である。式(1)から、フィーチャの最小印刷可能サイズの縮小は、3つの方法:露光波長λを短くすること、開口数NAPSを大きくすること、またはk1の値を小さくすること、によって達成することができると言える。
ここで、Pmagneticは圧力、Vはガスの体積、γは断熱係数、そしてEpulseはパルスのエネルギーである。例えば、1Tおよび0.1Jパルスに対して、含まれる泡の大きさは約1.5mmであろう。この大きさの10倍大きい泡にも効力があり、これは、なお有用な磁場が30分の1であってよい(そして必ずしも超伝導性磁石ではない)ことを意味する。
Claims (14)
- 放射ビームを生成する放射システムであって、
放射およびデブリを放出するプラズマを生成する放射源と、
集光された放射を放射ビーム放出開口に誘導する放射コレクタと、
前記プラズマと前記コレクタとの間の位置での方が前記プラズマの他の側でよりも強い磁場勾配を生成して、前記プラズマの少なくとも一成分を前記放射コレクタから離して前記放射コレクタの中心光軸に平行な方向に誘導する磁場ジェネレータと、を含む、放射システム。 - 前記放射コレクタは、前記放射源によって生成された前記放射を集光する反射面を含み、
前記磁場ジェネレータは、前記デブリを前記反射面から離して誘導するように構成される、請求項1に記載の放射システム。 - 前記プラズマを含む体積部にガスを供給するガス供給部をさらに含む、請求項1または2に記載の放射システム。
- 前記ガスは、水素および/または重水素および/またはヘリウムを含む、請求項3に記載の放射システム。
- 前記ガス供給部および磁場ジェネレータは、前記デブリの中性粒子を前記コレクタから離して誘導する磁気ポンプとして機能する、請求項3または4に記載の放射システム。
- 前記ガス供給部は、前記磁場内の荷電イオンの形態をとるデブリを減速させて前記デブリが前記磁気ポンプによって除去されるように構成される、請求項5に記載の放射システム。
- 前記放射源は、燃料の小滴に誘導されたレーザビームを提供するレーザ源を含む、請求項1〜6のいずれかに記載の放射システム。
- 前記磁場は、前記プラズマが前記放射コレクタのコンポーネントと接触するのを実質的に防止するように構成される、請求項1〜7のいずれかに記載の放射システム。
- 前記磁場ジェネレータは、前記磁場を発生させる複数のコイルを含む、請求項1〜8のいずれかに記載の放射システム。
- 前記磁場ジェネレータは、前記コイル間の強磁性材料をさらに含み、前記強磁性材料は、前記磁場内に勾配を生成するように構成および配置される、請求項9に記載の放射システム。
- 前記磁場ジェネレータは、前記プラズマと前記コレクタとの間での方が前記プラズマの他の側でよりも前記磁場が強くなるようにするための強磁性チューブを含む、請求項1〜10のいずれかに記載の放射システム。
- 前記強磁性チューブを冷却する冷却システムをさらに含む、請求項11に記載の放射システム。
- 放射源および放射コレクタを含む放射システム内のデブリを抑制する方法であって、
放射およびデブリを放出するプラズマを生成することと、
前記放射コレクタを使用して前記放射を集光することと、
前記プラズマと前記コレクタとの間の位置での方が前記プラズマの他の側でよりも強い磁場勾配を前記放射システム内に生成して、前記プラズマの少なくとも一成分を前記放射コレクタから離して前記放射コレクタの中心光軸に平行な方向に誘導することと、を含む、方法。 - リソグラフィ装置であって、
放射ビームを生成する放射システムであって、
放射およびデブリを放出するプラズマを生成する放射源と、
集光された放射を放射ビーム放出開口に誘導する放射コレクタと、
前記プラズマと前記コレクタとの間の位置での方が前記プラズマの他の側でよりも強い磁場勾配を生成して、前記プラズマの少なくとも一成分を前記放射コレクタから離して前記放射コレクタの中心光軸に平行な方向に誘導するように構成された磁場ジェネレータと、を含む、放射システムと、
前記放射ビーム放出開口から前記集光された放射を受け、かつ前記集光された放射を調整して放射ビームにする照明システムと、
パターニングデバイスを支持するサポートであって、前記パターニングデバイスは前記放射ビームの断面にパターンを与えてパターン付けされた放射ビームを形成するサポートと、
前記パターン付けされた放射ビームを基板上に投影する投影システムと、を含む、
リソグラフィ装置。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13649408P | 2008-09-09 | 2008-09-09 | |
US61/136,494 | 2008-09-09 | ||
US13683308P | 2008-10-07 | 2008-10-07 | |
US61/136,833 | 2008-10-07 | ||
PCT/EP2009/003135 WO2010028704A1 (en) | 2008-09-09 | 2009-04-30 | Radiation system and lithographic apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012502414A JP2012502414A (ja) | 2012-01-26 |
JP5669736B2 true JP5669736B2 (ja) | 2015-02-12 |
Family
ID=40848287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011525418A Expired - Fee Related JP5669736B2 (ja) | 2008-09-09 | 2009-04-30 | 放射システムおよびリソグラフィ装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9411250B2 (ja) |
JP (1) | JP5669736B2 (ja) |
KR (1) | KR101613924B1 (ja) |
CN (2) | CN104714374A (ja) |
NL (1) | NL1036803A (ja) |
TW (1) | TWI451814B (ja) |
WO (1) | WO2010028704A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US8993976B2 (en) * | 2011-08-19 | 2015-03-31 | Asml Netherlands B.V. | Energy sensors for light beam alignment |
WO2013050212A1 (en) * | 2011-10-07 | 2013-04-11 | Asml Netherlands B.V. | Radiation source |
WO2013174525A1 (en) * | 2012-05-25 | 2013-11-28 | Eth Zurich | Method and apparatus for generating electromagnetic radiation |
US8791440B1 (en) * | 2013-03-14 | 2014-07-29 | Asml Netherlands B.V. | Target for extreme ultraviolet light source |
WO2014165535A1 (en) * | 2013-04-01 | 2014-10-09 | Peter Haaland | Quasi-neutral plasma generation of radioisotopes |
US9989758B2 (en) | 2013-04-10 | 2018-06-05 | Kla-Tencor Corporation | Debris protection system for reflective optic utilizing gas flow |
US10237960B2 (en) * | 2013-12-02 | 2019-03-19 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
US9301382B2 (en) * | 2013-12-02 | 2016-03-29 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
WO2015124372A2 (en) * | 2014-02-24 | 2015-08-27 | Asml Netherlands B.V. | Lithographic system |
US9155178B1 (en) | 2014-06-27 | 2015-10-06 | Plex Llc | Extreme ultraviolet source with magnetic cusp plasma control |
US9544986B2 (en) | 2014-06-27 | 2017-01-10 | Plex Llc | Extreme ultraviolet source with magnetic cusp plasma control |
US9578729B2 (en) | 2014-11-21 | 2017-02-21 | Plex Llc | Extreme ultraviolet source with dual magnetic cusp particle catchers |
US9538628B1 (en) * | 2015-06-11 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for EUV power improvement with fuel droplet trajectory stabilization |
US9776218B2 (en) * | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
US10128016B2 (en) * | 2016-01-12 | 2018-11-13 | Asml Netherlands B.V. | EUV element having barrier to hydrogen transport |
KR102322475B1 (ko) * | 2016-10-20 | 2021-11-08 | 폴 슈레 앙스띠뛰 | 다수의-언듈레이터 나선형 소형 광 소스 |
US11153957B2 (en) * | 2018-10-31 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for generating an electromagnetic radiation |
NL2024748A (en) * | 2019-02-08 | 2020-08-19 | Asml Netherlands Bv | Radiation System |
JP2023540119A (ja) * | 2020-09-04 | 2023-09-21 | アイエスティーイーキュー ビー.ヴィー. | マルチセクションの集光モジュールを備えた短波長放射線源 |
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JP2552433B2 (ja) | 1994-06-30 | 1996-11-13 | 関西電力株式会社 | レーザープラズマx線源のデブリス除去方法及び装置 |
JPH08195533A (ja) * | 1995-01-18 | 1996-07-30 | Rikagaku Kenkyusho | X線発生装置 |
US6972421B2 (en) | 2000-06-09 | 2005-12-06 | Cymer, Inc. | Extreme ultraviolet light source |
TWI255394B (en) | 2002-12-23 | 2006-05-21 | Asml Netherlands Bv | Lithographic apparatus with debris suppression means and device manufacturing method |
DE10325151B4 (de) | 2003-05-30 | 2006-11-30 | Infineon Technologies Ag | Vorrichtung für die Erzeugung und/oder Beeinflussung elektromagnetischer Strahlung eines Plasmas |
US7251012B2 (en) * | 2003-12-31 | 2007-07-31 | Asml Netherlands B.V. | Lithographic apparatus having a debris-mitigation system, a source for producing EUV radiation having a debris mitigation system and a method for mitigating debris |
JP4535732B2 (ja) * | 2004-01-07 | 2010-09-01 | 株式会社小松製作所 | 光源装置及びそれを用いた露光装置 |
US7423275B2 (en) * | 2004-01-15 | 2008-09-09 | Intel Corporation | Erosion mitigation for collector optics using electric and magnetic fields |
US7087914B2 (en) * | 2004-03-17 | 2006-08-08 | Cymer, Inc | High repetition rate laser produced plasma EUV light source |
US7504643B2 (en) * | 2005-12-22 | 2009-03-17 | Asml Netherlands B.V. | Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement |
JP4904809B2 (ja) * | 2005-12-28 | 2012-03-28 | ウシオ電機株式会社 | 極端紫外光光源装置 |
JP4850558B2 (ja) | 2006-03-31 | 2012-01-11 | キヤノン株式会社 | 光源装置、及びそれを用いた露光装置、デバイス製造方法 |
JP5156202B2 (ja) | 2006-07-10 | 2013-03-06 | ギガフォトン株式会社 | 極端紫外光源装置 |
US8766212B2 (en) * | 2006-07-19 | 2014-07-01 | Asml Netherlands B.V. | Correction of spatial instability of an EUV source by laser beam steering |
US7889312B2 (en) * | 2006-09-22 | 2011-02-15 | Asml Netherlands B.V. | Apparatus comprising a rotating contaminant trap |
US7541603B2 (en) * | 2006-09-27 | 2009-06-02 | Asml Netherlands B.V. | Radiation system and lithographic apparatus comprising the same |
US8071963B2 (en) | 2006-12-27 | 2011-12-06 | Asml Netherlands B.V. | Debris mitigation system and lithographic apparatus |
-
2009
- 2009-04-01 NL NL1036803A patent/NL1036803A/nl not_active Application Discontinuation
- 2009-04-20 TW TW098113068A patent/TWI451814B/zh not_active IP Right Cessation
- 2009-04-30 US US13/062,872 patent/US9411250B2/en active Active
- 2009-04-30 KR KR1020117008187A patent/KR101613924B1/ko active IP Right Grant
- 2009-04-30 CN CN201510142259.4A patent/CN104714374A/zh active Pending
- 2009-04-30 JP JP2011525418A patent/JP5669736B2/ja not_active Expired - Fee Related
- 2009-04-30 WO PCT/EP2009/003135 patent/WO2010028704A1/en active Application Filing
- 2009-04-30 CN CN2009801348298A patent/CN102144192A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR101613924B1 (ko) | 2016-04-20 |
KR20110070858A (ko) | 2011-06-24 |
US20110170079A1 (en) | 2011-07-14 |
CN102144192A (zh) | 2011-08-03 |
TW201012304A (en) | 2010-03-16 |
US9411250B2 (en) | 2016-08-09 |
JP2012502414A (ja) | 2012-01-26 |
NL1036803A (nl) | 2010-03-15 |
TWI451814B (zh) | 2014-09-01 |
CN104714374A (zh) | 2015-06-17 |
WO2010028704A1 (en) | 2010-03-18 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |