JP5664028B2 - 電子装置の製造方法 - Google Patents
電子装置の製造方法 Download PDFInfo
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- JP5664028B2 JP5664028B2 JP2010195004A JP2010195004A JP5664028B2 JP 5664028 B2 JP5664028 B2 JP 5664028B2 JP 2010195004 A JP2010195004 A JP 2010195004A JP 2010195004 A JP2010195004 A JP 2010195004A JP 5664028 B2 JP5664028 B2 JP 5664028B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Description
付記1:第1基体と第2基体とを、金属粒子と有機溶剤とを含む金属ペーストを介し接着させる工程と、前記金属ペーストの有機溶剤を除去することにより、前記金属粒子の凝集体を形成する工程と、前記凝集体を構成する金属粒子の表面を還元性ガスを用い還元させる工程と、前記凝集体を構成する金属粒子の表面を還元させる工程の後、前記第1基体と前記第2基体とを押圧することにより、前記第1基体と前記第2基体とを前記凝集体を用い接合する工程と、を含むことを特徴とする電子装置の製造方法。
付記2:前記凝集体を構成する金属粒子の表面を還元させる工程は、前記凝集体を構成する金属粒子の表面を前記還元性ガスに曝す工程と、前記還元性ガスを吸引する工程、とを交互に行なうことを特徴とする付記1記載の電子装置の製造方法。
付記3:前記凝集体を用い接合する工程は、減圧下で行なうことを特徴とする付記1または2記載の電子装置の製造方法。
付記4:前記凝集体を用い接合する工程は、前記凝集体に、前記金属粒子の材料の降伏応力以下の圧力を加えることを特徴とする付記1から3のいずれか一項記載の電子装置の製造方法。
付記5:前記金属粒子の径は0.1μm以上かつ1μm以下であることを特徴とする付記1から4のいずれか一項記載の電子装置の製造方法。
付記6:前記還元性ガスはギ酸を含むことを特徴とする付記1から5のいずれか一項記載の電子装置の製造方法。
付記7:前記金属粒子は、銀、銅および錫の少なくとも一つを含むことを特徴とする付記1から6のいずれか一項記載の電子装置の製造方法。
10a 第1基体
20 半導体素子
20a 第2基体
30 金属ペースト
32 金属粒子
34 有機溶剤
36 凝集体
44 還元性ガス
Claims (4)
- 第1基体と第2基体とを、金属粒子と有機溶剤とを含む金属ペーストを介し接着させる工程と、
前記金属ペーストの有機溶剤を除去することにより、前記金属粒子の凝集体を形成する工程と、
前記凝集体を構成する金属粒子の表面を、還元性ガスを用い還元させる工程と、
前記凝集体を構成する金属粒子の表面を還元させる工程の後、前記第1基体と前記第2基体とを押圧し、前記第1基体と前記第2基体とを、前記金属粒子間の界面及び間隙を含む前記凝集体の状態を維持したまま前記凝集体を介して接合する工程と、
を含むことを特徴とする電子装置の製造方法。 - 前記凝集体を構成する金属粒子の表面を還元させる工程は、前記凝集体を構成する金属粒子の表面を前記還元性ガスに曝す工程と、前記還元性ガスを吸引する工程、とを交互に行なうことを特徴とする請求項1記載の電子装置の製造方法。
- 前記凝集体を用い接合する工程は、減圧下で行なうことを特徴とする請求項1または2記載の電子装置の製造方法。
- 前記凝集体を用い接合する工程は、前記凝集体に、前記金属粒子の材料の降伏応力以下の圧力を加えることを特徴とする請求項1から3のいずれか一項記載の電子装置の製造方法。
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JP2010195004A JP5664028B2 (ja) | 2010-08-31 | 2010-08-31 | 電子装置の製造方法 |
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JP2010195004A JP5664028B2 (ja) | 2010-08-31 | 2010-08-31 | 電子装置の製造方法 |
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JP2012054358A JP2012054358A (ja) | 2012-03-15 |
JP5664028B2 true JP5664028B2 (ja) | 2015-02-04 |
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JP2010195004A Expired - Fee Related JP5664028B2 (ja) | 2010-08-31 | 2010-08-31 | 電子装置の製造方法 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6147176B2 (ja) * | 2013-12-02 | 2017-06-14 | 三菱電機株式会社 | 半導体素子の基板への接合方法 |
DE112014006349T5 (de) | 2014-02-10 | 2016-11-03 | Mitsubishi Electric Corporation | Bond-Material, Bond-Verfahren und Halbleitervorrichtung für elektrische Energie |
US10468375B2 (en) | 2016-07-04 | 2019-11-05 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing same |
JP6631502B2 (ja) * | 2016-12-27 | 2020-01-15 | 日亜化学工業株式会社 | レーザパッケージの製造方法 |
DE112017007299T5 (de) | 2017-03-23 | 2020-01-02 | Mitsubishi Electric Corporation | Halbleiterelement-bonding-körper, halbleitereinheit und verfahren zur herstellung eines halbleiterelement-bonding-körpers |
JP7024671B2 (ja) * | 2018-09-06 | 2022-02-24 | 三菱マテリアル株式会社 | 接合用ペーストを用いて被接合部材を接合する方法 |
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JP2006054227A (ja) * | 2004-08-10 | 2006-02-23 | Hitachi Ltd | 半導体パワーモジュール及び半導体装置 |
JP2007067058A (ja) * | 2005-08-30 | 2007-03-15 | Nec Toppan Circuit Solutions Inc | 電子部品の集合体の製造方法および電子部品の集合体 |
DE102005047566C5 (de) * | 2005-10-05 | 2011-06-09 | Semikron Elektronik Gmbh & Co. Kg | Anordnung mit einem Leistungshalbleiterbauelement und mit einem Gehäuse sowie Herstellungsverfahren hierzu |
JP4731340B2 (ja) * | 2006-02-02 | 2011-07-20 | 富士通株式会社 | 半導体装置の製造方法 |
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