JP5662893B2 - 光電変換素子用蒸着材料及び光電変換素子、センサ、撮像素子 - Google Patents
光電変換素子用蒸着材料及び光電変換素子、センサ、撮像素子 Download PDFInfo
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- JP5662893B2 JP5662893B2 JP2011162003A JP2011162003A JP5662893B2 JP 5662893 B2 JP5662893 B2 JP 5662893B2 JP 2011162003 A JP2011162003 A JP 2011162003A JP 2011162003 A JP2011162003 A JP 2011162003A JP 5662893 B2 JP5662893 B2 JP 5662893B2
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- VELSFHQDWXAPNK-UHFFFAOYSA-N tetracontacyclo[25.6.5.516,28.44,32.35,11.321,34.28,10.212,15.222,35.229,31.113,20.124,38.02,6.014,19.017,25.018,23.030,37.033,36.547,54.446,53.448,58.126,51.150,52.03,45.07,42.09,61.039,40.041,43.044,63.049,76.055,78.056,62.057,68.059,64.060,67.065,69.066,71.070,73.072,75.074,77]octaheptaconta-1,3(45),4(48),5(61),6,8,10,12,14,16,18,20,22,24(39),25,27(38),28,30,32,34(42),35(40),36,41(43),44(63),46,49(76),50(77),51,53,55(78),56(62),57,59,64,66,68,70(73),71,74-nonatriacontaene Chemical compound c12c3c4c5c6c1c1c7c8c2c2c3c3c9c4c4c5c5c%10c%11c%12c%13c%14c%15c%12c%12c%16c%17c%18c%19c%20c%21c%17c%17c%22c%21c%21c%23c%20c%20c%19c%19c%24c%18c%16c%15c%15c%24c%16c(c7c%15c%14c1c6c5%13)c8c1c2c2c3c3c(c%21c5c%22c(c%11c%12%17)c%10c4c5c93)c%23c2c%20c1c%19%16 VELSFHQDWXAPNK-UHFFFAOYSA-N 0.000 description 1
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/152—Fullerenes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Description
図面を参照して、本発明にかかる一実施形態の光電変換素子について説明する。図1は、本実施形態の光電変換素子の構成を示す概略断面図である。本明細書の図面において、視認しやすくするため、各部の縮尺は適宜変更して示してある。
蒸着法における成膜速度は、生産性の観点から、0.2〜12Å/sであることが好ましい。また、蒸着法による蒸着温度は上記成膜速度(蒸着速度)の範囲に入る温度であればよく、350〜750℃の範囲であることが好ましい。
上記製造方法において、蒸着材料60に含まれる金属量をできるだけ増やさないことが好ましい。
基板10としては特に制限なく、シリコン基板、ガラス基板等を用いることができる。
受光層30は、少なくとも光電変換層32を含む層である。本実施形態では、受光層30は、電子ブロッキング層31と光電変換層32とにより構成されている。
光電変換層32は、光を受光し、その光量に応じた電荷を発生するものであり、有機の光電変換材料を含んで構成されている。
素環化合物である。
る化合物であることが好ましい。
(a)1,3−ジカルボニル核:例えば1,3−インダンジオン核、1,3−シクロヘキサンジオン、5,5−ジメチル−1,3−シクロヘキサンジオン、1,3−ジオキサン−4,6−ジオン等。
(b)ピラゾリノン核:例えば1−フェニル−2−ピラゾリン−5−オン、3−メチル−1−フェニル−2−ピラゾリン−5−オン、1−(2−ベンゾチアゾイル)−3−メチル−2−ピラゾリン−5−オン等。
(c)イソオキサゾリノン核:例えば3−フェニル−2−イソオキサゾリン−5−オン、3−メチル−2−イソオキサゾリン−5−オン等。
(d)オキシインドール核:例えば1−アルキル−2,3−ジヒドロ−2−オキシインドール等。
(e)2,4,6−トリケトヘキサヒドロピリミジン核:例えばバルビツル酸又は2−チオバルビツル酸及びその誘導体等。誘導体としては例えば1−メチル、1−エチル等の1−アルキル体、1,3−ジメチル、1,3−ジエチル、1,3−ジブチル等の1,3−ジアルキル体、1,3−ジフェニル、1,3−ジ(p−クロロフェニル)、1,3−ジ(p−エトキシカルボニルフェニル)等の1,3−ジアリール体、1−エチル−3−フェニル等の1−アルキル−1−アリール体、1,3−ジ(2―ピリジル)等の1,3位ジヘテロ環置換体等が挙げられる。
(f)2−チオ−2,4−チアゾリジンジオン核:例えばローダニン及びその誘導体等。誘導体としては例えば3−メチルローダニン、3−エチルローダニン、3−アリルローダニン等の3−アルキルローダニン、3−フェニルローダニン等の3−アリールローダニン、3−(2−ピリジル)ローダニン等の3位ヘテロ環置換ローダニン等が挙げられる。
(g)2−チオ−2,4−オキサゾリジンジオン(2−チオ−2,4−(3H,5H)−オキサゾールジオン核:例えば3−エチル−2−チオ−2,4−オキサゾリジンジオン等。
(h)チアナフテノン核:例えば3(2H)−チアナフテノン−1,1−ジオキサイド等。
(i)2−チオ−2,5−チアゾリジンジオン核:例えば3−エチル−2−チオ−2,5−チアゾリジンジオン等。
(j)2,4−チアゾリジンジオン核:例えば2,4−チアゾリジンジオン、3−エチル−2,4−チアゾリジンジオン、3−フェニル−2,4−チアゾリジンジオン等。
(k)チアゾリン−4−オン核:例えば4−チアゾリノン、2−エチル−4−チアゾリノン等。
(l)2,4−イミダゾリジンジオン(ヒダントイン)核:例えば2,4−イミダゾリジンジオン、3−エチル−2,4−イミダゾリジンジオン等。
(m)2−チオ−2,4−イミダゾリジンジオン(2−チオヒダントイン)核:例えば2−チオ−2,4−イミダゾリジンジオン、3−エチル−2−チオ−2,4−イミダゾリジンジオン等。
(n)2−イミダゾリン−5−オン核:例えば2−プロピルメルカプト−2−イミダゾリン−5−オン等。
(o)3,5−ピラゾリジンジオン核:例えば1,2−ジフェニル−3,5−ピラゾリジンジオン、1,2−ジメチル−3,5−ピラゾリジンジオン等。
(p)ベンゾチオフェン−3−オン核:例えばベンゾチオフェン−3−オン、オキソベン
ゾチオフェンー3−オン、ジオキソベンゾチオフェンー3−オン等。
(q)インダノン核:例えば1−インダノン、3−フェニル−1−インダノン、3−メチル−1−インダノン、3,3−ジフェニル−1−インダノン、3,3−ジメチル−1−インダノン等。
R1としてはアルキル基、アリール基がより好ましい。R6及びR7としては、シアノ基がより好ましい。
受光層30に含まれる電子ブロッキング層31は、下部電極20から光電変換層32に電子が注入されるのを抑制し、光電変換層32で発生した電子が電極2側に流れるのを阻害するための層である。電子ブロッキング層31は、有機材料又は無機材料、あるいはその両方を含んで構成されている。
すが、本発明はこれらに限定されるものではない。なお、下記のEaはその材料の電子親
和力、Ipはその材料のイオン化ポテンシャルを示す。EB―1,2,…の「EB」は
「電子ブロッキング」の略である。
としては、1,3−ビス(4−tert−ブチルフェニル−1,3,4−オキサジアゾリ
ル)フェニレン(OXD−7)等のオキサジアゾール誘導体、アントラキノジメタン誘導
体、ジフェニルキノン誘導体、バソクプロイン、バソフェナントロリン、及びこれらの誘
導体、トリアゾール化合物、トリス(8−ヒドロキシキノリナート)アルミニウム錯体、
ビス(4−メチル−8−キノリナート)アルミニウム錯体、ジスチリルアリーレン誘導
体、シロール化合物などを用いることができる。また、電子受容性有機材料でなくとも、
十分な電子輸送性を有する材料ならば使用することは可能である。ポルフィリン系化合物
や、DCM(4−ジシアノメチレン−2−メチル−6−(4−(ジメチルアミノスチリ
ル))−4Hピラン)等のスチリル系化合物、4Hピラン系化合物を用いることができ
る。
封止層50は、水、酸素等の有機材料を劣化させる因子が有機材料を含む受光層に侵入するのを防ぐための層である。封止層50は、下部電極20、電子ブロッキング層31、光電変換層32、及び上部電極40を覆って形成されている。
「撮像素子」
鏡、携帯電話機等の撮像モジュール等に搭載して用いられる。
基板として、ガラス基板を用意し、基板上に、アモルファス性ITO下部電極(30nm厚)をスパッタ法により成膜し、次いで、電子ブロッキング層として上記EB−3を真空抵抗加熱蒸着法により成膜した(100nm厚)。
撮像素子にDC光源から光を照射した状態で外部電界を与えた場合の、DC出力画像、暗時出力画像を取得して、白傷や黒傷の評価を行った。
実施例1〜4及び比較例1〜5の光電変換素子及び撮像素子について、2×105V/cmの電場を印加した時の応答速度を測定した。ここで応答速度とは、信号強度が0%から99%となるまでの立ち上がり時間とした。実施例1〜4ではいずれも応答速度がほぼ同様であり、良好な応答特性を示したのに対し、比較例1〜5では、その応答速度の低下が確認された。その結果を表1に示す。表1には、フラーレンの平均粒径及び、フラーレンの蒸着速度及びその変動幅、そして、フラーレン粒子(蒸着材料)のHPLC純度も併せて記載した。実施例1〜4の応答速度を100とした場合の相対値で示してある。
化合物7の代わりに化合物10とし、表2に記載のフラーレン粒子を用いた以外は実施例1と同様にして、実施例5〜7及び比較例6〜7の封止層つき光電変換素子及び撮像素子を作製した。評価についても実施例1と同様とした。表2において、応答速度は、実施例5〜7の応答速度を100とした場合の相対値で示してある。表2に示されるように、化合物10の場合においても本発明の有効性が確認された。
実施例1のフラーレン蒸着材料に金属不純物を100ppm以上添加したもの(Fe:250ppm、Ni,Cr:各100ppm)を蒸着源とした以外は、実施例1と同様にして封止層付き光電変換素子を作製した。その結果、光電変換素子及び撮像素子の応答速度は実施例1とほぼ同様の応答速度が得られた。一方、撮像素子の画質評価については、得られた画像には、白傷、黒傷等の欠陥が複数確認された。
10,101 基板
20 下部電極
30 受光層
31 電子ブロッキング層
32 光電変換層
40 上部電極
50 封止層
60 蒸着原料
71 蒸着セル
100 撮像素子
106 信号読み出し回路
Claims (13)
- 有機光電変換素子の受光層の蒸着に用いられる蒸着材料であって、
フラーレン又はフラーレン誘導体を主成分とする複数の粒子又は該複数の粒子が成形されてなる成形体であり、
前記複数の粒子のD50%で表される平均粒径が50μm〜300μmであり、且つ、該複数の粒子の主成分のHPLC純度が99.5%以上であることを特徴とする光電変換素子用蒸着材料。 - 前記粒子の各金属元素の含有量がそれぞれ100ppm未満であることを特徴とする請求項1に記載の光電変換素子用蒸着材料。
- 前記粒子の主成分がフラーレンであることを特徴とする請求項1又は2に記載の光電変換素子用蒸着材料。
- 前記粒子の主成分がフラーレンC60であることを特徴とする請求項3に記載の光電変換素子用蒸着材料。
- 一対の電極と、前記一対の電極に挟持された少なくとも光電変換層を含む受光層を有する有機光電変換素子であって、
前記受光層の少なくとも一部の層が、請求項1〜4のいずれかに記載の光電変換素子用蒸着材料を用いて蒸着されたフラーレン又はフラーレン誘導体を含むものであることを特徴とする光電変換素子。 - 前記フラーレン又はフラーレン誘導体を含む層が、真空抵抗加熱蒸着法により蒸着されたものであることを特徴とする請求項5に記載の光電変換素子。
- 前記フラーレン又はフラーレン誘導体を含む層が、共蒸着により蒸着されたものであることを特徴とする請求項5又は6に記載の光電変換素子。
- 複数の、請求項5〜7のいずれかに記載の光電変換素子と、
前記光電変換素子の前記光電変換層で発生した電荷に応じた信号を読み出す信号読出し回路が形成された回路基板とを備えることを特徴とする撮像素子。 - 請求項5〜7のいずれかに記載の光電変換素子を備えたことを特徴とするセンサ。
- 一対の電極と、前記一対の電極に挟持された少なくとも光電変換層を含む受光層を有する有機光電変換素子の製造方法であって、
前記受光層の少なくとも一部を請求項1〜4のいずれかに記載の光電変換素子用蒸着材料を用いて蒸着法により成膜することを特徴とする光電変換素子の製造方法。 - 前記蒸着法が真空抵抗加熱蒸着法であることを特徴とする請求項10に記載の光電変換素子の製造方法。
- 前記蒸着法が共蒸着法であることを特徴とする請求項10又は11に記載の光電変換素子の製造方法。
- 前記蒸着法による成膜速度が0.2〜12Å/sであることを特徴とする請求項11〜12のいずれかに記載の光電変換素子の製造方法。
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JP2009049278A (ja) * | 2007-08-22 | 2009-03-05 | Fujifilm Corp | 光電変換素子、光電変換素子の製造方法、固体撮像素子 |
US20110175031A1 (en) | 2008-09-24 | 2011-07-21 | Idemitsu Kosan Co., Ltd. | Composite organic electroluminescent material |
JP5469918B2 (ja) * | 2009-05-27 | 2014-04-16 | 富士フイルム株式会社 | 光電変換素子の製造方法、光電変換素子、及び撮像素子 |
JP5124620B2 (ja) * | 2009-06-05 | 2013-01-23 | 富士フイルム株式会社 | 光電変換素子及びその製造方法並びに撮像素子 |
JP5682108B2 (ja) * | 2009-07-22 | 2015-03-11 | 住友化学株式会社 | フラーレン誘導体 |
CN102473854B (zh) * | 2009-07-31 | 2013-04-17 | Udc爱尔兰有限责任公司 | 用于有机器件的沉积材料以及用于制备有机器件的方法 |
US8378339B2 (en) | 2009-09-11 | 2013-02-19 | Fujifilm Corporation | Photoelectric conversion device, production method thereof, photosensor, imaging device and their drive methods |
JP5270642B2 (ja) * | 2010-03-24 | 2013-08-21 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
JP5264865B2 (ja) * | 2010-03-31 | 2013-08-14 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
JP5653667B2 (ja) * | 2010-04-14 | 2015-01-14 | 三菱商事株式会社 | フラーレン精製物及びその製造方法 |
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US20140138522A1 (en) | 2014-05-22 |
WO2013015441A1 (en) | 2013-01-31 |
JP2013023752A (ja) | 2013-02-04 |
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