JP5651184B2 - 半導体接合素子の製造方法 - Google Patents
半導体接合素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 19
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 13
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 231100000701 toxic element Toxicity 0.000 description 4
- 229910001456 vanadium ion Inorganic materials 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 239000011812 mixed powder Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000002419 bulk glass Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Description
る半導体接合素子およびそれを用いた各種デバイスを提供することにある。
Sb2O3、V2O5、P2O5、Fe2О3をそれぞれ重量比で、28%、50%、12%、 10%となるように配合・混合した混合粉末200gを白金ルツボに入れ、電気炉を用いて5〜10℃/min(℃/分)の昇温速度で1100℃まで加熱して2時間保持した。保持中は均一なガラスとするために攪拌した。次に、白金ルツボを電気炉から取り出し、予め150〜200℃に加熱しておいたステンレス板上に流し込んだ。凝固物はガラス光沢を呈していた。
このガラスにおける4価のバナジウムイオン(V4+)と5価のバナジウムイオン(V5+)の比率を酸化還元滴定法により評価した結果、V4+/V5+<1であった。この結果より、このガラスはp型半導体であることを確認した。
Cu2O、V2O5、Fe2O3、P2O5をそれぞれモル分率で、10%、70%、10%、10%となるように配合・混合した混合粉末200gを白金ルツボに入れ、電気炉を用いて5〜10℃/min(℃/分)の昇温速度で1100℃まで加熱して2時間保持した。保持中は均一なガラスとするために攪拌した。次に、白金ルツボを電気炉から取り出し、予め150〜200℃に加熱しておいたステンレス板上に流し込んだ。なお、凝固物はガラス光沢を呈していた。
K2CO3、V2O5、Fe2O3、P2O5をそれぞれモル分率で、10%、70%、10%、10%となるように配合・混合した混合粉末200gを白金ルツボに入れ、電気炉を用いて5〜10℃/min(℃/分)の昇温速度で1100℃まで加熱して2時間保持した。加熱保持中は均一なガラスとするために攪拌した。次に、白金ルツボを電気炉から取り出し、予め200〜300℃に加熱しておいたステンレス板上に流し込んだ。なお、凝固物はガラス光沢を呈していた。
本発明におけるバナジウム酸化物を含有する半導体ガラスは、軟化点が低く、低温での焼成が可能であるため、スクリーン印刷法、インクジェット法、スタンプ法、フォトレジストフィルム法等の簡易な厚膜形成法による成膜が可能である。このため、半導体ガラス、単体半導体、化合物半導体の鏡面研磨面上に、これら半導体と逆極性の半導体ガラス粉末と、有機バインダと、有機溶剤とからなるペーストを前記厚膜形成法により塗布し、加熱により脱溶し、その後、ガラスの軟化点以上の温度で加熱保持することにより焼成し、半導体接合素子を作製することができる。その後、さらに結晶化温度で加熱保持して、半導体ガラスを結晶化させることも可能である。なお、半導体ガラスの焼結性が悪い場合には、用いた半導体ガラスよりも低融点のバナジウム酸化物ガラスを添加するとよい。また、金属の鏡面研磨面上に、前記同様の方法により、半導体膜を形成させることで、ショットキー接合素子を簡易に作製することができる。
図1はバナジウム酸化物からなるn型半導体結晶化ガラス103とp型結晶Si基板104とを、前記のいずれかの方法により接合したp−n半導体接合素子を適用した太陽電池セルの断面図である。また、p型結晶Si基板104の代わりに、p型半導体結晶化ガラス基板を用いることも可能である。n型半導体表面には反射防止膜101と表面電極102,p型半導体裏面には裏面電極105が形成されている。
図2は前記のいずれかの方法により、n型半導体結晶化ガラス202およびp型半導体結晶化ガラス203を金属電極201にショットキー接合して形成されたΠ文字型熱電変換素子の構造図である。この素子をそれぞれ電気的に並列あるいは直列に接合することにより、熱電発電モジュールを作製することができる。
102 表面電極
103,202 n型半導体結晶化ガラス
104 p型Si基板
105 裏面電極
201 金属電極
203 p型半導体結晶化ガラス
Claims (1)
- バナジウム酸化物を含有する半導体ガラスを熱処理により結晶化させた結晶化ガラスの表面のみを酸化又は還元し、このガラスの両面に電極を形成することを特徴とする半導体接合素子の製造方法。
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PCT/JP2011/070007 WO2012039265A1 (ja) | 2010-09-24 | 2011-09-02 | 半導体接合素子およびそれを用いた半導体デバイス、並びに半導体接合素子の製造方法 |
JP2012534982A JP5651184B2 (ja) | 2010-09-24 | 2011-09-02 | 半導体接合素子の製造方法 |
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JP5537402B2 (ja) * | 2010-12-24 | 2014-07-02 | 株式会社日立製作所 | 熱電変換材料 |
JPWO2014073095A1 (ja) * | 2012-11-09 | 2016-09-08 | 株式会社日立製作所 | 熱電変換モジュール及びその製造方法 |
JP6791544B2 (ja) * | 2015-06-24 | 2020-11-25 | リンテック株式会社 | 熱電半導体組成物、並びに熱電変換材料及びその製造方法 |
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JP4686171B2 (ja) * | 2004-10-29 | 2011-05-18 | 株式会社東芝 | 熱−電気直接変換装置 |
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US20130126864A1 (en) | 2013-05-23 |
JPWO2012039265A1 (ja) | 2014-02-03 |
WO2012039265A1 (ja) | 2012-03-29 |
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