JP5649547B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5649547B2 JP5649547B2 JP2011224285A JP2011224285A JP5649547B2 JP 5649547 B2 JP5649547 B2 JP 5649547B2 JP 2011224285 A JP2011224285 A JP 2011224285A JP 2011224285 A JP2011224285 A JP 2011224285A JP 5649547 B2 JP5649547 B2 JP 5649547B2
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- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229920005989 resin Polymers 0.000 claims description 62
- 239000011347 resin Substances 0.000 claims description 62
- 238000000465 moulding Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
Claims (3)
- 第1の発光素子が固着された第1のリードと、第2の発光素子が固着された第2のリードと、を有する第1のフレームと、
第1のマウント部と、前記第1のマウント部に固着された第1の受光素子と、第2のマウント部と、前記第2のマウント部に固着された第2の受光素子と、前記第1のマウント部を前記第2のマウント部に接続する接続部と、を有する第2のフレームと、を準備する工程と、
第1のキャビティと、第2のキャビティと、前記第2のキャビティに連通するランナーと、前記第2のキャビティから前記第1のキャビティに連通するスルーゲートおよびギャップと、を有する金型に、前記第1のフレームと、前記第2のフレームと、をセットし樹脂成型する成型工程であって、
前記第1の発光素子が固着された前記第1のリードと、前記第1の受光素子が固着された前記第1のマウント部と、を前記第1のキャビティに収容し、
前記第2の発光素子が固着された前記第2のリードと、前記第2の受光素子が固着された前記第2のマウント部と、を前記第2のキャビティに収容し、
前記接続部を前記ギャップに収容し、
前記ランナーおよび前記スルーゲートを介して、前記第1のキャビティと、前記第2のキャビティと、前記ギャップと、に第1の樹脂を充填し、前記第1のキャビティに第1の成型部、および、前記第2のキャビティに第2の成型部を形成する成型工程と、
前記ギャップ内に充填され、前記接続部を覆う前記第1の樹脂を残し、前記ランナー内に充填され、前記第2の成型部につながった前記第1の樹脂と、前記スルーゲート内に充填され、前記第1の成型部および前記第2の成型部につながった前記第1の樹脂を除去する工程と、
前記第1の成型部と、前記第2の成型部と、前記第1の樹脂からなる薄膜に覆われた前記接続部と、を覆う第2の樹脂からなる第3の成型部を形成する工程と、
を備えた半導体装置の製造方法。 - 前記金型は、前記第1のキャビティと前記第2のキャビティとが並ぶ方向において、同一直線上に並んだ前記ランナーと、前記スルーゲートと、を有する請求項1記載の半導体装置の製造方法。
- 前記第2のフレームは、前記第1の受光素子および前記第2の受光素子に電気的に接続されたリードをさらに有し、
前記第1の受光素子および前記第2の受光素子に電気的に接続されたリードは、前記接続部と共に前記ギャップに収容され、前記第1の樹脂からなる薄膜に覆われる請求項1または2に記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011224285A JP5649547B2 (ja) | 2011-10-11 | 2011-10-11 | 半導体装置の製造方法 |
US13/425,232 US20130087811A1 (en) | 2011-10-11 | 2012-03-20 | Semiconductor device and method for manufacturing the same |
US14/320,366 US9059368B2 (en) | 2011-10-11 | 2014-06-30 | Semiconductor device and method for manufacturing the same |
US14/709,162 US20150243828A1 (en) | 2011-10-11 | 2015-05-11 | Semiconductor device and method for manufacturing the same |
US14/857,288 US9472536B2 (en) | 2011-10-11 | 2015-09-17 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011224285A JP5649547B2 (ja) | 2011-10-11 | 2011-10-11 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013084813A JP2013084813A (ja) | 2013-05-09 |
JP5649547B2 true JP5649547B2 (ja) | 2015-01-07 |
Family
ID=48041514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011224285A Active JP5649547B2 (ja) | 2011-10-11 | 2011-10-11 | 半導体装置の製造方法 |
Country Status (2)
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US (3) | US20130087811A1 (ja) |
JP (1) | JP5649547B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013197302A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 半導体装置およびその製造方法 |
EP3121853B1 (en) * | 2015-07-23 | 2022-01-19 | ams AG | Method of producing an optical sensor at wafer-level and optical sensor |
JP6445940B2 (ja) * | 2015-08-03 | 2018-12-26 | 株式会社東芝 | 光結合装置 |
JP6445947B2 (ja) * | 2015-09-04 | 2018-12-26 | 株式会社東芝 | 光結合装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047045A (en) * | 1975-03-03 | 1977-09-06 | Paxton Jr Grady W | Optical coupler |
JPH0648883Y2 (ja) * | 1987-09-30 | 1994-12-12 | シャープ株式会社 | 光結合素子 |
JP3676136B2 (ja) * | 1999-08-23 | 2005-07-27 | シャープ株式会社 | 光結合素子 |
JP4117868B2 (ja) * | 1999-11-22 | 2008-07-16 | シャープ株式会社 | 光結合素子 |
JP3748380B2 (ja) * | 2001-02-08 | 2006-02-22 | シャープ株式会社 | 多チャンネル型光結合素子の製造方法 |
JP2008028033A (ja) * | 2006-07-19 | 2008-02-07 | Sharp Corp | 光結合装置、及び電子機器 |
JP4219954B2 (ja) * | 2006-12-28 | 2009-02-04 | シャープ株式会社 | 多チャンネル型光結合装置、電子機器及びリードフレーム部材並びに多チャンネル型光結合装置の製造方法 |
JP2010161202A (ja) * | 2009-01-08 | 2010-07-22 | Renesas Electronics Corp | 光結合素子及びその製造方法 |
US7973393B2 (en) * | 2009-02-04 | 2011-07-05 | Fairchild Semiconductor Corporation | Stacked micro optocouplers and methods of making the same |
JP5381280B2 (ja) * | 2009-04-23 | 2014-01-08 | オムロン株式会社 | 光結合装置 |
JP2013197302A (ja) * | 2012-03-19 | 2013-09-30 | Toshiba Corp | 半導体装置およびその製造方法 |
-
2011
- 2011-10-11 JP JP2011224285A patent/JP5649547B2/ja active Active
-
2012
- 2012-03-20 US US13/425,232 patent/US20130087811A1/en not_active Abandoned
-
2014
- 2014-06-30 US US14/320,366 patent/US9059368B2/en active Active
-
2015
- 2015-05-11 US US14/709,162 patent/US20150243828A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JP2013084813A (ja) | 2013-05-09 |
US20140315337A1 (en) | 2014-10-23 |
US9059368B2 (en) | 2015-06-16 |
US20150243828A1 (en) | 2015-08-27 |
US20130087811A1 (en) | 2013-04-11 |
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