JP5648891B2 - Radiation measurement method and radiation measurement apparatus - Google Patents
Radiation measurement method and radiation measurement apparatus Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims description 58
- 238000005259 measurement Methods 0.000 title claims description 21
- 238000000691 measurement method Methods 0.000 title claims description 8
- 238000010521 absorption reaction Methods 0.000 claims description 39
- 230000035945 sensitivity Effects 0.000 claims description 28
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- 238000004364 calculation method Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 16
- 238000011088 calibration curve Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 230000005250 beta ray Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 229920003023 plastic Polymers 0.000 description 4
- 229920002102 polyvinyl toluene Polymers 0.000 description 4
- 235000009518 sodium iodide Nutrition 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 229920005989 resin Polymers 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 231100000987 absorbed dose Toxicity 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 230000005251 gamma ray Effects 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
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- 239000010421 standard material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
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Description
本発明は、放射線（例えばＸ線，ベータ線、ガンマ線等）を用いた放射線測定方法に関し、1つの線源に対して複数の異なるシンチレータを具備した検出器を用い、特に高エネルギーを十分に受け止める結晶シンチレータと高エネルギーは大部分を透過するプラスチックシンチレータを組み合わせ、夫々のシンチレータを透過する線量の割合からエネルギー弁別を含む厚さ測定を行う放射線測定方法に関するものである。 The present invention relates to a radiation measurement method using radiation (for example, X-rays, beta rays, gamma rays, etc.), and uses a detector having a plurality of different scintillators for one radiation source, particularly sufficiently receiving high energy. The present invention relates to a radiation measurement method in which a plastic scintillator that transmits most of a crystal scintillator and high energy is combined, and a thickness measurement including energy discrimination is performed from a ratio of a dose that passes through each scintillator.
X線を用いた透視による解析や検査はX線の透過強度を画像化したもので、それを画像処理することでX線の強度情報を得ている。しかし、X線の強度情報のみでは物質の影絵を見ているに過ぎず、物質内部の形状はわかっても材質や状態を詳しく知るには限界がある。一方、人間の目は光の強度情報だけでなく、光の波長（色）情報を捉えることが出来るため、物質の材質や状態を詳しく認識することが出来る。X線の強度情報を捉えるだけではなく、X線の持つエネルギー（波長）情報を捉えるとこが出来れば内部の材質や状態を解析することができる。 X-ray fluoroscopic analysis and inspection are images of X-ray transmission intensity, and X-ray intensity information is obtained by image processing. However, X-ray intensity information alone is only looking at the shadow of the substance, but there are limits to knowing the material and state in detail even if the shape inside the substance is known. On the other hand, since the human eye can capture not only the light intensity information but also the light wavelength (color) information, the material and state of the substance can be recognized in detail. In addition to capturing X-ray intensity information, it is possible to analyze internal materials and conditions if it is possible to capture X-ray energy (wavelength) information.
図7はX線、β線の2種類の線源1ａ，1ｂを用いて異なる素材の厚さ（坪量）を測る装置の一例を示す要部斜視図およびブロック構成図である。被測定物は矢印Ｐ方向へ一定速度で流れており、それぞれの線源1ａ，1ｂに対して夫々の検出器（電離箱2ａ，2ｂ）が正対した位置に配置してある。夫々の線源1ａ，1ｂと検出器2ａ，2ｂを搭載した異なるフレーム（11a:x線測定装置,11b:β線測定装置）で、x線源1aは電源回路11cおよびx線駆動回路11dを介して、β線源1bはシャッタ駆動回路1eを介して被測定物（シート）の同一箇所を測定できる様に構成されている。被測定物3としては例えば、磁気フィルムで薄いベースシート上に異なる物質（磁性体）を薄く塗布（蒸着）した複合材料などであり、塗布（蒸着）量及びベースシートの厚さをそれぞれ測るような用途に用いられる。 FIG. 7 is a main part perspective view and a block diagram showing an example of an apparatus for measuring the thickness (basis weight) of different materials using two types of X-ray and β-ray sources 1a and 1b. The object to be measured flows at a constant speed in the direction of the arrow P, and the respective detectors (ionization chambers 2a and 2b) are arranged at positions facing the radiation sources 1a and 1b. In different frames (11a: x-ray measuring device, 11b: β-ray measuring device) equipped with respective radiation sources 1a, 1b and detectors 2a, 2b, the x-ray source 1a includes a power supply circuit 11c and an x-ray drive circuit 11d. Accordingly, the β-ray source 1b is configured to be able to measure the same portion of the object to be measured (sheet) via the shutter drive circuit 1e. The measurement object 3 is, for example, a composite material in which different substances (magnetic materials) are thinly applied (deposited) on a thin base sheet with a magnetic film, and the amount of application (deposition) and the thickness of the base sheet can be measured respectively. Used for various purposes.
透過測定方式の吸収の式は、測定厚さをx、透過前の検出器出力をI0、透過後の検出器出力をIとすると、I=I0exp(-μx)と表わすことができる。吸収係数μは、β線源の場合はそのエネルギーによって一定値に定まり、被測定物3には影響されない特徴があるため、測定厚さ範囲によって線源の種類を選ぶことになる。 The absorption equation of the transmission measurement method can be expressed as I = I 0 exp (−μx) where x is the measurement thickness, I 0 is the detector output before transmission, and I is the detector output after transmission. . In the case of a β-ray source, the absorption coefficient μ is determined to be a constant value depending on its energy and is not affected by the DUT 3. Therefore, the type of the radiation source is selected according to the measurement thickness range.
紙・プラスチック等の測定には、通常85Ｋｒまたは147Ｐｍのような弱いエネルギーのβ線源が使用される。
X線の場合は被測定物3によっても吸収係数は変化するので測定範囲を考慮して管電圧を最適に選ぶ必要がある。紙やシート材の例では品種や厚さにより変化し、μ=a*x+b（a,bは品種によって決まる定数）と表すことができる。4.5keVのX線の例では、磁気フィルムのベースシートに対し磁性層では約5倍の吸収係数を示す。
For measurement of paper, plastic, etc., a weak energy β-ray source such as 85 Kr or 147 Pm is usually used.
In the case of X-rays, since the absorption coefficient varies depending on the object to be measured 3, it is necessary to optimally select the tube voltage in consideration of the measurement range. In the example of paper or sheet material, it varies depending on the type and thickness, and can be expressed as μ = a * x + b (a and b are constants determined by the type). In the example of 4.5 keV X-rays, the magnetic layer has an absorption coefficient about 5 times that of the base sheet of the magnetic film.
透過してきた厚さ情報を持った放射線はキセノンなどの希ガスを封じた電離箱2ａ，2ｂで検出される。この際、X線、β線いずれの場合においても線源1ａ，1ｂと検出器（電離箱2ａ，2ｂ）間の空気層も同時に測定してしまうため、この空気層の温度変化の影響が大きい。この影響を除くために、空気層の温度を温度検出器6a，6ｂで検出して温度補償し、電離箱の微小検出電流を増幅回路4ａ，4ｂ（プリアンプ）で増幅する。 The transmitted radiation having thickness information is detected by ionization chambers 2a and 2b sealed with a rare gas such as xenon. At this time, in both cases of X-rays and β-rays, the air layer between the radiation sources 1a and 1b and the detectors (ionization chambers 2a and 2b) is also measured at the same time. . In order to eliminate this influence, the temperature of the air layer is detected by the temperature detectors 6a and 6b to compensate the temperature, and the minute detection current of the ionization chamber is amplified by the amplifier circuits 4a and 4b (preamplifier).
その出力はA/D変換器5ａ，5ｂでA/D変換されて演算部16（マイクロコンピュータ）に含まれる信号処理部7ａ，7ｂへ送られて演算に供される。信号処理部7ａ，7ｂでは、予め被測定物3と同一の材質であって厚さの異なる坪量が既知の試料の測定により作成された検量線の校正データ8ａ，8ｂと比較することにより、所望材質の厚さを判定することが出来る。これを測定に用いる夫々の線源1ａ，1ｂについて行っておき、記憶部（図示せず）に格納しておく。特に、上記に示した複合材料による積層の材料で夫々の厚さを求める際には、夫々の線源により得られた測定値が材料毎の吸収係数と厚さの積の総和である事から、これを比較演算処理部9で連立演算として解く事により算出が可能となる。
なお、それらの厚さ情報は表示部や生産管理サーバ10へ送出される。
The output is A / D converted by the A / D converters 5a and 5b, sent to the signal processing units 7a and 7b included in the calculation unit 16 (microcomputer), and used for calculation. In the signal processing units 7a and 7b, by comparing with calibration data 8a and 8b of a calibration curve prepared by measuring a sample having the same material as the object 3 to be measured and having a different basis weight in advance, The thickness of the desired material can be determined. This is performed for each of the radiation sources 1a and 1b used for measurement and stored in a storage unit (not shown). In particular, when determining the thickness of each of the laminated materials using the composite materials described above, the measured value obtained from each radiation source is the sum of the product of the absorption coefficient and thickness for each material. This can be calculated by solving it as simultaneous calculations in the comparison calculation processing section 9.
The thickness information is sent to the display unit and the production management server 10.
また、センサ部（線源1ａ，1ｂおよび電離箱2ａ，2ｂ）は被測定物（シート）の幅方向に機械的に走査され、厚さの幅方向分布を測定できるように構成されている。双方の測定ポイントは同一箇所を比較演算できるように同期を取っている。 The sensor units (the radiation sources 1a and 1b and the ionization chambers 2a and 2b) are mechanically scanned in the width direction of the object to be measured (sheet) and configured to measure the width direction distribution of the thickness. Both measurement points are synchronized so that the same location can be compared and calculated.
ところで、上記従来の放射線測定装置においては、
１）異なる線源を2台搭載するとともに、測定装置を2台配置したシステム構成にしなければならないため、システム価格が高価となり、また、線源や検出器のスペースも2台分必要になる。
２）2つの線源の安定制御（安定駆動）にそれぞれ独立した制御機構を設ける必要がある。特に、成膜の高速化により同一位置を測定するための同期制御は困難になってきている。また、同一位置を正確にトラッキング（線源及び検出器のシート幅方向への走査位置）ができない場合には測定誤差を大きくする事になる。
３）線源の経時変化補正の如何によって、測定精度が悪くなる可能性がある。
という課題があった。
By the way, in the conventional radiation measuring apparatus,
1) A system configuration in which two different radiation sources are installed and two measuring devices are arranged, resulting in an expensive system price and a space for two radiation sources and detectors.
2) It is necessary to provide independent control mechanisms for stable control (stable drive) of the two radiation sources. In particular, synchronous control for measuring the same position has become difficult due to the high speed of film formation. If the same position cannot be accurately tracked (scanning position of the radiation source and detector in the sheet width direction), the measurement error is increased.
3) The measurement accuracy may be deteriorated depending on how the radiation source is corrected over time.
There was a problem.
従って本発明は、複層膜厚の測定のために2つの線源を用いなくても、1つの線源と異なるシンチレータの組み合わせにより高精度にエネルギー弁別が行える安価でコンパクトな装置を用いて複層膜厚の同時独立算出を可能にした放射線測定方法を提供することを目的としている。 Therefore, the present invention can be realized by using an inexpensive and compact apparatus that can perform energy discrimination with high accuracy by combining different scintillators with one radiation source without using two radiation sources to measure the multilayer film thickness. An object of the present invention is to provide a radiation measurement method that enables simultaneous independent calculation of the layer thickness.
このような課題を達成するために、本発明のうち請求項１記載の放射線測定方法の発明は、
同一線源から照射された放射線を複数の材質からなる被測定物に照射して透過させ、透過した透過線量から被測定物の物理量を測定する放射線測定方法において、透過した放射線を少なくとも２種類の検出器により検出し、それぞれの検出器からの出力を検量線を用いて弁別演算を行う工程と、弁別演算した値を用いて各層の坪量を演算する工程を含み、
前記被測定物の厚さがｔ 1 ，ｔ 2 の2層からなる厚み（坪量）を有するときに、下記の演算式を用いて前記ｔ 1 ，ｔ 2 の2層の厚みを演算することを特徴とする。
記
In order to achieve such a problem, the invention of the radiation measuring method according to claim 1 of the present invention is:
In a radiation measurement method for irradiating a measurement object made of a plurality of materials and transmitting the radiation irradiated from the same radiation source, and measuring a physical quantity of the measurement object from the transmitted transmitted dose, at least two kinds of transmitted radiation are transmitted detected by the detector, it viewed including the output from each detector and performing discrimination operation by using a calibration curve, a step of calculating the basis weight of each layer using the discrimination calculation value,
Wherein when having a thickness of thickness of the object to be measured is composed of two layers of t 1, t 2 (basis weight), by calculating the thickness of the two layers of the t 1, t 2 by using an arithmetic formula It is characterized by.
Record
但し、ｘ1；低エネルギーに対する感度の大きな検出器の出力
ｘ2；高エネルギーに対する感度の大きな検出器の出力
μ1Low；ｔ1層の低エネルギー帯における吸収係数
μ2low；ｔ2層の低エネルギー帯における吸収係数
μ1H1；ｔ1層の高エネルギー帯における吸収係数
μ1H2；ｔ2層の高エネルギー帯における吸収係数
E1Low；ｔ1層の低エネルギー帯における感度
E2low；ｔ2層の低エネルギー帯における感度
E1Hi；ｔ1層の高エネルギー帯における感度
E2Hi；ｔ2層の高エネルギー帯における感度
X 1 ; output of a detector with high sensitivity to low energy x 2 ; output of a detector with high sensitivity to high energy
μ 1Low ; t 1 layer absorption coefficient in the low energy band
μ 2low ; absorption coefficient in the low energy band of t 2 layer
μ 1H1 ; Absorption coefficient of t 1 layer in high energy band
μ 1H2 ; Absorption coefficient of t 2 layer in high energy band
E 1Low ; Sensitivity in the low energy band of t 1 layer
E 2low ; sensitivity in the low energy band of t 2 layer
E 1Hi ; Sensitivity of t 1 layer in high energy band
E 2Hi ; Sensitivity of t 2 layer in high energy band
請求項２においては、請求項１に記載の放射線測定方法において、
前記被測定物の厚さがｔ1，ｔ2の2層からなる厚み（坪量）を有するときに、下記の演算式を用いて前記ｔ1，ｔ2の2層の厚みを演算することを特徴とする。
記
In Claim 2 , in the radiation measuring method of Claim 1,
Wherein when having a thickness of thickness of the object to be measured is composed of two layers of t 1, t 2 (basis weight), by calculating the thickness of the two layers of the t 1, t 2 by using an arithmetic formula It is characterized by.
Record
但し、ｘ1；低エネルギーに対する感度の大きな検出器の出力
ｘ2；高エネルギーに対する感度の大きな検出器の出力
μ1Low；ｔ1層の低エネルギー帯における吸収係数
μ2low；ｔ2層の低エネルギー帯における吸収係数
μ1H1；ｔ1層の高エネルギー帯における吸収係数
μ1H2；ｔ2層の高エネルギー帯における吸収係数
E1Low；ｔ1層の低エネルギー帯における感度
E2low；ｔ2層の低エネルギー帯における感度
E1Hi；ｔ1層の高エネルギー帯における感度
E2Hi；ｔ2層の高エネルギー帯における感度
X 1 ; output of a detector with high sensitivity to low energy x 2 ; output of a detector with high sensitivity to high energy
μ 1Low ; t 1 layer absorption coefficient in the low energy band
μ 2low ; absorption coefficient in the low energy band of t 2 layer
μ 1H1 ; Absorption coefficient of t 1 layer in high energy band
μ 1H2 ; Absorption coefficient of t 2 layer in high energy band
E 1Low ; Sensitivity in the low energy band of t 1 layer
E 2low ; sensitivity in the low energy band of t 2 layer
E 1Hi ; Sensitivity of t 1 layer in high energy band
E 2Hi ; Sensitivity of t 2 layer in high energy band
請求項３においては、請求項１に記載のｔ１，ｔ２の演算式または請求項２に記載のｔ１，ｔ２の演算式を用い2種類の材質が混合された試料の割合を重量比または坪量として演算するようにしたことを特徴とする。
請求項４においては、
同一線源から照射された放射線を複数の材質からなるシート状の被測定物に照射して透過させ、透過した透過線量から被測定物の物理量を第１，第２検出器により測定する放射線測定装置であって、前記第１，第２検出器は搬送される前記被測定物に対して上面が同じ高さになるように一致させるとともに搬送方向に対して直交するように併設して配置され、前記第１検出器は数KeVの低エネルギー域から数MeVの高エネルギー域までの吸収特性を有し、前記第２検出器は10KeV〜100KeV程度のエネルギー域の吸収特性を有するように構成するとともに、これら吸収特性の異なる前記第１検出器と前記第２検出器により得られた検出信号に対してエネルギー弁別を行い、弁別した値を用いて各層の坪量を演算することを特徴とする。
In claim 3, the ratio of the sample in which two kinds of materials are mixed using the arithmetic expression of t 1 and t 2 according to claim 1 or the arithmetic expression of t 1 and t 2 according to claim 2 is weighted. It is calculated as a ratio or basis weight.
In claim 4,
Radiation measurement in which radiation irradiated from the same radiation source is irradiated and transmitted through a sheet-like object to be measured made of a plurality of materials, and the physical quantity of the object to be measured is measured by the first and second detectors from the transmitted transmitted dose. The first and second detectors are arranged so as to coincide with the measured object to be conveyed so that the upper surface is the same height and orthogonal to the conveying direction. The first detector has an absorption characteristic from a low energy range of several KeV to a high energy range of several MeV, and the second detector has an absorption characteristic in an energy range of about 10 KeV to 100 KeV. In addition, energy discrimination is performed on the detection signals obtained by the first detector and the second detector having different absorption characteristics, and the basis weight of each layer is calculated using the discriminated value. .
本発明によれば以下のような効果がある。
請求項1〜4によれば、
１．密度が大きく（原子番号の大きい）厚さの薄い被測定物と密度が小さく（原子番号の小さい）厚い被測定物で透過線量が同じであっても、材質（物質）により区別が可能になる。
２．線源が1つで済むため、システム価格が低く抑えられ、またスペースも2台分の測定フレームが必要になくなるため、フットプリントに有利であり生産ラインの短縮に寄与する。
３．線源の安定制御（安定駆動）は1つの線源について行えば良いため、1つの制御機構で済む。
４．透過特性の校正も、1つの線源から得られ、事前の校正データ取得が容易である。
５．線源の経時変化補正が高精度でなくても、夫々の検出器は1つの線源に同期して依存するためエネルギー弁別精度が悪くならない。
The present invention has the following effects.
According to claims 1 to 4,
1. Even if the penetration dose is the same for a thin object to be measured with a large density (with a large atomic number) and a thick object with a small density (with a small atomic number), the material (substance) can be distinguished. .
2. Since only one radiation source is required, the system price can be kept low, and space is not required for two measuring frames, which is advantageous for the footprint and contributes to shortening the production line.
3. Since stable control (stable drive) of the radiation source may be performed for one radiation source, only one control mechanism is required.
4). Transmission characteristics can also be calibrated from a single source, making it easy to obtain calibration data in advance.
5. Even if the correction of the aging of the radiation source is not highly accurate, the energy discrimination accuracy does not deteriorate because each detector depends on one radiation source in synchronization.
以下本発明を、図面を用いて詳細に説明する。図1（ａ，ｂ）に本発明の構成図を示す。図1（ａ）は要部斜視図、図1（ｂ）は要部ブロック構成図である。これらの図において、従来例の図7と同一要素には同一符号を付している。 Hereinafter, the present invention will be described in detail with reference to the drawings. FIG. 1 (a, b) shows a configuration diagram of the present invention. FIG. 1A is a perspective view of a main part, and FIG. 1B is a block diagram of the main part. In these drawings, the same elements as those in FIG.
X線、β線、またはγ線などの放射線源21に正対する位置に第1シンチレータを具備する第1検出器（ラインセンサ・・・カメラ）22aと第2シンチレータを具備する第2検出器（ラインセンサ）22bを近接させ且つ、被測定物3の搬送方向pに対して直交するように併設してある。なお、放射線源21には余分な放射線が漏れないようにコリメータ23や照射筒（図示せず）などが設けられている。
A first detector (line sensor... Camera) 22a having a first scintillator and a second detector having a second scintillator at a position facing the radiation source 21 such as X-ray, β-ray, or γ-ray ( (Line sensor) 22b is provided close to each other and perpendicular to the conveyance direction p of the object 3 to be measured. The radiation source 21 is provided with a collimator 23, an irradiation tube (not shown) and the like so that excess radiation does not leak.
第1検出器22aと第2検出器22bは上面が略一致するように揃えてあり、被測定物 (シート状試料)3は夫々のセンサの上空を通過するものとし、夫々のセンサの検出部間の距離と被測定物の搬送速度から、第1検出器22aと第2検出器は22bは同一の測定箇所を同期して演算できるように構成されている。 The first detector 22a and the second detector 22b are aligned so that the upper surfaces thereof are substantially coincident with each other, and the object to be measured (sheet-like sample) 3 passes over the respective sensors, and the detection portions of the respective sensors. The first detector 22a and the second detector 22b are configured so that the same measurement location can be calculated in synchronization with the distance between them and the conveyance speed of the object to be measured.
夫々の検出器には、透過線量に応じた微小検出電流をプリアンプ部4ａ，4ｂで高精度な高抵抗を用いて電圧に変換し、A/D変換器5ａ，5ｂでA/D変換して演算処理部7ａ，7ｂに送る。一方、空気層の温度変化による影響を除くために、空気層の温度及び検出器温度、線源温度を検出し温度補償し、演算処理部7ａ，7ｂにて校正データ8ａ，8ｂを用いて検量線による演算を行う。 In each detector, a minute detection current corresponding to the transmitted dose is converted into a voltage using a high-precision high resistance in the preamplifier units 4a and 4b, and A / D converted in the A / D converters 5a and 5b. The data is sent to the arithmetic processing units 7a and 7b. On the other hand, in order to eliminate the influence of the temperature change of the air layer, the temperature of the air layer, the detector temperature and the source temperature are detected and compensated for temperature, and the calibration data 8a and 8b are used in the arithmetic processing units 7a and 7b for calibration. Performs operations with lines.
前記第1シンチレータは低エネルギー域（数KeV）から高エネルギー域（数MeV）までの吸収特性のある、例えば、NaI（TI）（ヨウ化ナトリウム(タリウム)）やCsI(Tｌ）（ヨウ化セシウム(タリウム)）などの結晶系シンチレータが用いられる。
図2はNaI（TI）のエネルギーレベルに対するシンチレータの吸収特性を示す図である。横軸に放射線エネルギーを縦軸に吸収係数(%)を示している。
The first scintillator has an absorption characteristic from a low energy range (several KeV) to a high energy range (several MeV), for example, NaI (TI) (sodium iodide (thallium)) or CsI (Tl) (cesium iodide). Crystalline scintillators such as (thallium)) are used.
FIG. 2 is a diagram showing the absorption characteristics of the scintillator with respect to the energy level of NaI (TI). The horizontal axis shows the radiation energy, and the vertical axis shows the absorption coefficient (%).
一方、第2シンチレータは、PVT（ポリビニールトルエン）やGOS（Ce(Gd2(SiO4)O:Ce)）やGd2O2S:Tb（酸硫化ガドリニウム）に代表されるプラスチックシンチレータなどの安価で使い勝手のよいシンチレータで、検出エネルギー領域は10KeV-100KeV程度であり、それ以上の高エネルギー域ではシンチレータに吸収されず透過してしまい燐光にあまり寄与しない特性を示すものである。 On the other hand, the second scintillator is an inexpensive and easy-to-use scintillator such as plastic scintillators represented by PVT (polyvinyl toluene), GOS (Ce (Gd2 (SiO4) O: Ce)) and Gd2O2S: Tb (gadolinium oxysulfide). Thus, the detection energy region is about 10 KeV-100 KeV, and in the higher energy region, the light is not absorbed by the scintillator but is transmitted and exhibits a characteristic that does not contribute much to phosphorescence.
図3はPVTのエネルギーレベルに対するシンチレータの吸収特性を示す図である。横軸に放射線エネルギーを縦軸に吸収係数(%)を示している。
結晶シンチレータ(第1シンチレータ)と、プラスチックシンチレータ(第2シンチレータ)を組み合わせ、第1シンチレータにより被測定物の坪量を算出し、第2シンチレータによりエネルギー弁別する。
FIG. 3 is a graph showing the absorption characteristics of the scintillator with respect to the energy level of PVT. The horizontal axis shows the radiation energy, and the vertical axis shows the absorption coefficient (%).
A crystal scintillator (first scintillator) and a plastic scintillator (second scintillator) are combined, the basis weight of the object to be measured is calculated by the first scintillator, and energy discrimination is performed by the second scintillator.
図4は異なる二つの検出器において信号値を厚さに変換するための検量線演算に関わる様子を示している。同じ線源から同じ試料を透過した同質のエックス線であっても、検出器のエネルギー感度が異なると、厚さを求める際の検量線は異なるものとなる。この性質を利用して複層膜厚の弁別演算を行うことを模式化したものである。なお、縦軸はｖまたはmA、横軸g/ｍ2またはμmであるが正規化して無単位となっている。 FIG. 4 shows a state relating to a calibration curve calculation for converting a signal value into a thickness in two different detectors. Even if the X-rays are homogeneous and transmitted through the same sample from the same radiation source, the calibration curves for determining the thickness differ if the energy sensitivity of the detector is different. This is a schematic representation of performing discrimination calculation of the multilayer film thickness using this property. The vertical axis is v or mA, and the horizontal axis is g / m 2 or μm, but is normalized and unitless.
検出器1及び2で検出されたそれぞれの検出信号は演算部6(図1参照)で正規化され、それぞれの値から予め既知の試料を用いて作成された検量線を用いて弁別演算を行い、弁別演算した値を用いて各層の坪量を演算する。 The detection signals detected by the detectors 1 and 2 are normalized by the calculation unit 6 (see FIG. 1), and a discrimination calculation is performed using a calibration curve created in advance using a known sample from each value. The basis weight of each layer is calculated using the value obtained by the discrimination calculation.
図5は、異なる二つの検出器においてどの様に信号値を得るかを模式化して示したものである。ｔ1、t2の厚さを持つ二つの層からなる試料をエックス線が透過した後に二つの異なる検出器から得る信号演算値をそれぞれX1、X2とする。X1は低エネルギーに感度が大きく、X2は高エネルギーに感度が大きな検出器である。
なお、図5ではｔ1、t2の厚さを持つ二つの層として示しているが、2種類の材質が混合された試料であってもその混合の割合を重量比または坪量として演算することができる。
FIG. 5 schematically shows how signal values are obtained in two different detectors. Let X 1 and X 2 be signal calculation values obtained from two different detectors after the X-ray passes through a sample composed of two layers having thicknesses t 1 and t 2 , respectively. X 1 is a detector sensitive to low energy, and X 2 is a detector sensitive to high energy.
In FIG. 5, two layers having thicknesses t 1 and t 2 are shown. However, even in a sample in which two kinds of materials are mixed, the mixing ratio is calculated as a weight ratio or a basis weight. be able to.
試料厚に対応する検出信号は、吸収係数×厚さを基本式として表すことができる。これにエネルギー帯における感度係数をEとして掛け合わせそれぞれの検出器における信号量として表している。Eの添え字は、1、2がそれぞれX1、X2に対応する感度であることを示し、Hi、Lowがそれぞれ高エネルギー帯、低エネルギー帯に対応することを示している。 The detection signal corresponding to the sample thickness can be expressed as an absorption coefficient × thickness as a basic equation. This is multiplied by the sensitivity coefficient in the energy band as E and expressed as the signal amount at each detector. The subscript E indicates that 1 and 2 are sensitivities corresponding to X 1 and X 2 , respectively, and Hi and Low correspond to the high energy band and the low energy band, respectively.
また、吸収係数μについては、t1試料における低エネルギー帯の吸収係数をμ1Low、高エネルギー帯の吸収係数をμ1Hiとして示し、t2試料における吸収係数を同様にμ2Lowおよびμ2Hiで示している。 Also, the absorption coefficient mu, t 1 the absorption coefficient of the low-energy band in samples mu 1Low, shown as 1Hi the absorption coefficient mu of high-energy band, an absorption coefficient at t 2 the sample similarly with mu 2Low and mu 2HI ing.
図5は材質の異なる2種（例えばアルミニウムや樹脂材料）の試料を透過した後の信号を模式的に示す図である。
予め標準的に用意する材料（例えばアルミニウムや樹脂材料）を用いて夫々の検出器に合わせた検量線を作成しておくものとする。以下に算出式の一例を示す。
FIG. 5 is a diagram schematically showing signals after passing through two types of samples (for example, aluminum and resin materials) having different materials.
It is assumed that a calibration curve is prepared for each detector using a standard material (for example, aluminum or resin material) prepared in advance. An example of the calculation formula is shown below.
第1検出器22ａ、第2検出器22ｂで得た信号値を元に検量線演算を行った値をＸ1、Ｘ2とすると、（吸収線量）×（厚さ）を基本式として1、2の式が得られる。 Assuming that X 1 and X 2 are values obtained by performing a calibration curve calculation based on the signal values obtained by the first detector 22a and the second detector 22b, (absorbed dose) × (thickness) is set to 1, The formula of 2 is obtained.
1´式を2式に代入してＸ2を求めると、 Substituting equation 1 ′ into equation 2 to obtain X 2 ,
上式よりt2を求めると、
When t 2 is calculated from the above equation,
そして、3式を1´式に代入して And substituting equation 3 into equation 1 ’
1、2式の連立方程式を解くと3、4式で複層の厚さを夫々得る事が出来る。
特に、
E1hi≒0、E2Low≒0
の時（低エネルギー側検出器に高エネルギー感度が無く高エネルギー側検出器に低エネルギー感度が無いとき）は、
3、4式は以下の様になる。
Solving the simultaneous equations (1) and (2), the thickness of the multilayer can be obtained by equations (3) and (4).
In particular,
E 1hi ≒ 0, E 2Low ≒ 0
(When the low energy detector does not have high energy sensitivity and the high energy detector does not have low energy sensitivity)
Equations 3 and 4 are as follows.
3式より From formula 3
実際には、数百〜数千画素の1次元の検出素子にて検出し、時系列に演算して2次元の画像にし、厚さと物質の構成割合などを把握することになる。
図6ａは第1検出器22ａの出力に対する検出素子の出力レベルを模式的に示すもので、シンチレータに搭載された検出素子が16画素の1次元センサであったとした場合である。
出力に応じてレベルの高い方からレベル1、レベル2、レベル3と層別する。
Actually, detection is performed by a one-dimensional detection element of several hundred to several thousand pixels, and is calculated in a time series to form a two-dimensional image, and the thickness and the composition ratio of the substance are grasped.
FIG. 6a schematically shows the output level of the detection element with respect to the output of the first detector 22a, and is a case where the detection element mounted on the scintillator is a 16-pixel one-dimensional sensor.
According to the output, level 1, level 2, and level 3 are stratified from the highest level.
図6ｂは層別した画素毎に画像を分けて表示したものである。分類した層別画像毎に、第1検出器22ａの透過線量の出力に合わせたコントラストで表示すると、夫々同じ物質での厚さ（坪量）比較が出来る。層別画像ごとに異なる単色光で表示すれば画像を重ね合わせても物質判別が可能な画像とすることが出来る。 FIG. 6b shows the image divided for each layered pixel. If each classified image is displayed with a contrast that matches the transmitted dose output of the first detector 22a, the thickness (basis weight) of the same substance can be compared. If the images are displayed with different monochromatic light for each layered image, the image can be distinguished even if the images are superimposed.
なお、以上の説明は、本発明の説明および例示を目的として特定の好適な実施例を示したに過ぎない。実施例では、異なるシンチレータを具備したラインセンサのような検出器を2台並べた構成としたが、TDI（Time Delay Integration：移動積分スキャン）ラインセンサであってもよい。 The above description merely shows a specific preferred embodiment for the purpose of explanation and illustration of the present invention. In the embodiment, two detectors such as line sensors having different scintillators are arranged side by side. However, a TDI (Time Delay Integration) line sensor may be used.
TDIラインセンサは、1列ではなく複数列（例えば4列、8列、・・・・128列）並んだ構成のものがあり、CCDの電荷読み出しの際、転送のタイミングとCCD面に入射している対象像が移動するタイミングを合わせることで，CCDの垂直段数だけ露光するものである。このような複数列の検出部に夫々異なるシンチレータを設置し、積算範囲をシンチレータの種類毎に限定したり、もしくは積算しないで夫々独立して取り出すことで1台のセンサから2つの検出結果を求めるようにしてもよい。 Some TDI line sensors are arranged in multiple rows (for example, 4 rows, 8 rows,..., 128 rows) instead of one row. When reading the CCD charge, it is incident on the CCD surface and the transfer timing. By matching the timing of moving the target image, the exposure is performed for the number of vertical stages of the CCD. Two detection results are obtained from one sensor by installing different scintillators in such multiple rows of detection units and limiting the integration range for each type of scintillator or taking out each independently without integrating. You may do it.
また、実施例では1次元のラインセンサであったが、2次元のエリアセンサーであっても単体のセンサを２つ以上組み合わせたものであっても良い。また、線源は必ずしも1つの線源でなく複数であっても構わない。 Further, although the one-dimensional line sensor is used in the embodiment, it may be a two-dimensional area sensor or a combination of two or more single sensors. Further, the number of radiation sources is not necessarily one and may be plural.
また、複層の試料に対し、いずれか一方の膜厚変動が少ない場合には、適宜、一方のシンチレータ検出器の素子数を減じ、代表値を求める事によってコストダウンを図っても良い。更に、極めて膜厚変動が小さい場合やコストダウン要請の強い場合には一方の検出素子を１つとしたり、シンチレータの代わりに電離箱を用いても良い。
従って本発明は、上記実施例に限定されることなく、その本質から逸脱しない範囲で更に多くの変更、変形を含むものである。
Further, in the case where any one of the film thickness variations is small with respect to the multi-layer sample, the cost may be reduced by appropriately reducing the number of elements of one scintillator detector and obtaining a representative value. Furthermore, when the film thickness variation is extremely small or when there is a strong demand for cost reduction, one detection element may be used, or an ionization chamber may be used instead of the scintillator.
Therefore, the present invention is not limited to the above-described embodiments, and includes many changes and modifications without departing from the essence thereof.
１,21 線源
２ 電離箱
３ 被測定物（試料）
４ プリアンプ
５ Ａ／Ｄ変換器
６ 温度検出器
７ 信号処理部
８ 校正データ
９ 比較演算処理部
１０ 表示部、生産管理サーバ
１１ａ Ｘ線測定装置
１１ｂ β線測定装置
１１ｃ 電源回路
１１ｄ Ｘ線駆動回路
１１ｅ シャッタ制御部
１６ 演算部（マイクロコンピュータ）
２２ａ 第１検出器
２２ｂ 第2検出器
1,21 Radiation source 2 Ionization chamber 3 Object to be measured (sample)
4 Preamplifier 5 A / D Converter 6 Temperature Detector 7 Signal Processing Unit 8 Calibration Data 9 Comparison Operation Processing Unit 10 Display Unit, Production Management Server 11a X-ray Measurement Device 11b β-ray Measurement Device 11c Power Supply Circuit 11d X-ray Drive Circuit 11e Shutter control unit 16 Calculation unit (microcomputer)
22a first detector 22b second detector
Claims (4)
前記被測定物の厚さがｔ 1 ，ｔ 2 の2層からなる厚み（坪量）を有するときに、下記の演算式を用いて前記ｔ 1 ，ｔ 2 の2層の厚みを演算することを特徴とする放射線測定方法。
記
ｘ 2 ；高エネルギーに対する感度の大きな検出器の出力
μ 1Low ；ｔ 1 層の低エネルギー帯における吸収係数
μ 2low ；ｔ 2 層の低エネルギー帯における吸収係数
μ 1H1 ；ｔ 1 層の高エネルギー帯における吸収係数
μ 1H2 ；ｔ 2 層の高エネルギー帯における吸収係数
E 1Low ；ｔ 1 層の低エネルギー帯における感度
E 2low ；ｔ 2 層の低エネルギー帯における感度
E 1Hi ；ｔ 1 層の高エネルギー帯における感度
E 2Hi ；ｔ 2 層の高エネルギー帯における感度 In a radiation measurement method for irradiating a measurement object made of a plurality of materials and transmitting the radiation irradiated from the same radiation source, and measuring a physical quantity of the measurement object from the transmitted transmitted dose, at least two kinds of transmitted radiation are transmitted detected by the detector, viewed including the steps of performing a discriminating operation using the calibration curve the output from each detector, the step of calculating the basis weight of each layer using the discrimination calculation value,
Wherein when having a thickness of thickness of the object to be measured is composed of two layers of t 1, t 2 (basis weight), by calculating the thickness of the two layers of the t 1, t 2 by using an arithmetic formula A radiation measurement method characterized by the above.
Record
x 2 ; output of a detector with high sensitivity to high energy
μ 1Low ; t 1 layer absorption coefficient in the low energy band
μ 2low ; absorption coefficient in the low energy band of t 2 layer
μ 1H1 ; Absorption coefficient of t 1 layer in high energy band
μ 1H2 ; Absorption coefficient of t 2 layer in high energy band
E 1Low ; Sensitivity in the low energy band of t 1 layer
E 2low ; sensitivity in the low energy band of t 2 layer
E 1Hi ; Sensitivity of t 1 layer in high energy band
E 2Hi ; Sensitivity of t 2 layer in high energy band
記Record
ｘ x 22 ；高エネルギーに対する感度の大きな検出器の出力; High-sensitivity detector output for high energy
μ μ 1Low1Low ；ｔT 11 層の低エネルギー帯における吸収係数Absorption coefficient in the low energy zone of the layer
μ μ 2low2low ；ｔT 22 層の低エネルギー帯における吸収係数Absorption coefficient in the low energy zone of the layer
μ μ 1H11H1 ；ｔT 11 層の高エネルギー帯における吸収係数Absorption coefficient in the high energy zone of the layer
μ μ 1H21H2 ；ｔT 22 層の高エネルギー帯における吸収係数Absorption coefficient in the high energy zone of the layer
E E 1Low1Low ；ｔT 11 層の低エネルギー帯における感度Sensitivity in the low energy band of the layer
E E 2low2low ；ｔT 22 層の低エネルギー帯における感度Sensitivity in the low energy band of the layer
E E 1Hi1Hi ；ｔT 11 層の高エネルギー帯における感度Sensitivity in the high energy zone of the layer
E E 2Hi2Hi ；ｔT 22 層の高エネルギー帯における感度Sensitivity in the high energy zone of the layer
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| WO2024090412A1 (en) * | 2022-10-25 | 2024-05-02 | 日本結晶光学株式会社 | X-ray detector of x-ray imaging system |
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